Abstract: The invention relates to compositions and methods for treating C. difficile associated disease (CDAD) through the administration to a subject in need thereof at least one nucleic acid encoding at least a portion of at least one of toxin A and toxin B.

Abstract: A subterranean tool that is self contained for actuation can be run into a desired location on an automatic set mode controlled by a timer. If a problem develops in getting the tool to the desired location in time a magnetic field created by permanent or electro-magnets can be brought to bear on the tool to stop the timer before the tool actuates. Once the tool is subsequently positioned at the desired location another magnetic field can be brought to bear near the tool to set it. Alternatively, the tool can be run to the desired location without activation with the timer and then the magnetic field can be brought to the tool to set it. The magnetic field can be lowered to the tool with wireline or can be dropped or pumped past the tool to actuate the tool. Optionally the field can be generated from within an object that ultimately lands on a seat to provide a backup way to set the tool using tubing pressure.

Abstract: A hydrostatically set packer is held against setting by a locking member that is made of controlled electrolytic material (CEM). After introduction into a wellbore and exposure to thermal or well fluid inputs the lock made of CEM dissolves or is otherwise weakened to the point where relative movement can occur for the setting of the packer with available hydrostatic pressure. The locking member can also be a shape memory alloy at least in part whose shape change allows the tool to set.

Abstract: A mode-locked laser system operable at low temperature can include an annealed, frequency-conversion crystal and a housing to maintain an annealed condition of the crystal during standard operation at the low temperature. In one embodiment, the crystal can have an increased length. First beam shaping optics can be configured to focus a beam from a light source to an elliptical cross section at a beam waist located in or proximate to the crystal. A harmonic separation block can divide an output from the crystal into beams of different frequencies separated in space. In one embodiment, the mode-locked laser system can further include second beam shaping optics configured to convert an elliptical cross section of the desired frequency beam into a beam with a desired aspect ratio, such as a circular cross section.

Abstract: In one embodiment, the present invention is a method and apparatus for organizing information in a world wide web page format. In one embodiment, information is received from a user (e.g., via a graphical user interface) and transformed into a world wide web page. The world wide web page is displayed to the user as the information is received (e.g., in substantially real time), so that the user can view the world wide web page as he or she constructs it. The invention therefore requires little to know prior programming knowledge.

Abstract: At least one conductive via structure is formed from an interconnect-level metal line through a middle-of-line (MOL) dielectric layer, a shallow trench isolation structure in a top semiconductor layer, and a buried insulator layer to a bottom semiconductor layer. The shallow trench isolation structure laterally abuts at least two field effect transistors that function as a radio frequency (RF) switch. The at least one conductive via structure and the at interconnect-level metal line may provide a low resistance electrical path from the induced charge layer in a bottom semiconductor layer to electrical ground, discharging the electrical charge in the induced charge layer. The discharge of the charge in the induced charge layer thus reduces capacitive coupling between the semiconductor devices and the bottom semiconductor layer, and thus secondary coupling between components electrically disconnected by the RF switch is reduced.

Abstract: A silicon device includes an active silicon layer, a buried oxide (BOX) layer beneath the active silicon layer and a high-resistivity silicon layer beneath the BOX layer. The device also includes a harmonic suppression layer at a boundary of the BOX layer and the high-resistivity silicon layer.

Abstract: A heterojunction bipolar transistor (HBT), an integrated circuit (IC) chip including at least one HBT and a method of forming the IC. The HBT includes an extrinsic base with one or more buried interstitial barrier layer. The extrinsic base may be heavily doped with boron and each buried interstitial barrier layer is doped with a dopant containing carbon, e.g., carbon or SiGe:C. The surface of the extrinsic base may be silicided.

Abstract: A silicon device includes an active silicon layer, a buried oxide (BOX) layer beneath the active silicon layer and a high-resistivity silicon layer beneath the BOX layer. The device also includes a harmonic suppression layer at a boundary of the BOX layer and the high-resistivity silicon layer.

Abstract: The present invention includes a fundamental laser light source configured to generate fundamental wavelength laser light, an optical crystal configured to receive fundamental laser light from the fundamental laser light source, the optical crystal configured to generate alternate wavelength light by frequency converting a portion of the received fundamental laser light to alternate wavelength light, an auxiliary light source configured to generate auxiliary wavelength light, the auxiliary wavelength light having a wavelength different from the fundamental wavelength laser light and the alternate wavelength light, the fundamental laser light source and the auxiliary light source oriented such that the fundamental laser light copropagates with the auxiliary light through a surface of the optical crystal, and a detector configured to detect at least one of fundamental wavelength laser light scattered by the optical crystal, alternate wavelength light scattered by the optical crystal, or auxiliary light scattere

Abstract: An actuator and method for setting a subterranean tool uses an externally mounted actuator on a tubular string that is operably engaged to the tool to be actuated. At the desired location for actuation a signal is given to a valve assembly. The opening of the valve releases the pressurized compressible fluid against a floating piston. The piston drives viscous fluid ahead of itself through the now open valve that in turn drives an actuating piston whose movement sets the tool. The triggering mechanism to open the valve can be a variety of methods including an acoustic signal, a vibration signal, a change in magnetic field, or elastic deformation of the tubular wall adjacent the valve assembly.

Abstract: An improved solid-state laser for generating sub-200 nm light is described. This laser uses a fundamental wavelength between about 1030 nm and 1065 nm to generate the sub-200 nm light. The final frequency conversion stage of the laser creates the sub-200 nm light by mixing a wavelength of approximately 1109 nm with a wavelength of approximately 234 nm. By proper selection of non-linear media, such mixing can be achieved by nearly non-critical phase matching. This mixing results in high conversion efficiency, good stability, and high reliability.

Abstract: A substrate includes a first region having a first resistivity, for optimizing a field effect transistor, a second region having a second resistivity, for optimizing an npn subcollector of a bipolar transistor device and triple well, a third region having a third resistivity, with a high resistivity for a passive device, a fourth region, substantially without implantation, to provide low perimeter capacitance for devices.

Abstract: A laser for generating an output wavelength of approximately 193.4 nm includes a fundamental laser, an optical parametric generator, a fourth harmonic generator, and a frequency mixing module. The optical parametric generator, which is coupled to the fundamental laser, can generate a down-converted signal. The fourth harmonic generator, which may be coupled to the optical parametric generator or the fundamental laser, can generate a fourth harmonic. The frequency mixing module, which is coupled to the optical parametric generator and the fourth harmonic generator, can generate a laser output at a frequency equal to a sum of the fourth harmonic and twice a frequency of the down-converted signal.

Abstract: An approach for sinking heat from a transistor is provided. A method includes forming a substrate contact extending from a first portion of a silicon-on-insulator (SOI) island to a substrate. The method also includes forming a transistor in a second portion of the SOI island. The method further includes electrically isolating the substrate contact from the transistor by doping the first portion of the SOI island.

Abstract: A method of forming and structure for through wafer vias and signal transmission lines formed of through wafer vias. The structure includes, a semiconductor substrate having a top surface and an opposite bottom surface; and an array of through wafer vias comprising at least one electrically conductive through wafer via and at least one electrically non-conductive through wafer via, each through wafer via of the array of through wafer vias extending from the top surface of to the bottom surface of the substrate, the at least one electrically conductive via electrically isolated from the substrate.

Abstract: A pulse multiplier includes a beam splitter and one or more mirrors. The beam splitter receives a series of input laser pulses and directs part of the energy of each pulse into a ring cavity. After circulating around the ring cavity, part of the pulse energy leaves the ring cavity through the beam splitter and part of the energy is recirculated. By selecting the ring cavity optical path length, the repetition rate of an output series of laser pulses can be made to be a multiple of the input repetition rate. The relative energies of the output pulses can be controlled by choosing the transmission and reflection coefficients of the beam splitter. This pulse multiplier can inexpensively reduce the peak power per pulse while increasing the number of pulses per second with minimal total power loss.

Abstract: A semiconductor structure and a method of forming the same. In one embodiment, a method of forming a silicon-on-insulator (SOI) wafer substrate includes: providing a handle substrate; forming a high resistivity material layer over the handle substrate, the high resistivity material layer including one of an amorphous silicon carbide (SiC), a polycrystalline SiC, an amorphous diamond, or a polycrystalline diamond; forming an insulator layer over the high resistivity material layer; and bonding a donor wafer to a top surface of the insulator layer to form the SOI wafer substrate.

Abstract: An actuator and method for setting a subterranean tool uses an externally mounted actuator on a tubular string that is operably engaged to the tool to be actuated. At the desired location for actuation a signal is given to a valve assembly. The opening of the valve releases the pressurized compressible fluid against a floating piston. The piston drives viscous fluid ahead of itself through the now open valve that in turn drives an actuating piston whose movement sets the tool. The triggering mechanism to open the valve can be a variety of methods including an acoustic signal, a vibration signal, a change in magnetic field, or elastic deformation of the tubular wall adjacent the valve assembly.