Abstract: Some embodiments include an integrated assembly having a conductive expanse over conductive nodes. The conductive nodes include a first composition. A bottom surface of the conductive expanse includes a second composition which is different composition than the first composition. A stack is over the conductive expanse. The stack includes alternating first and second levels. Pillar structures extend vertically through the stack. Each of the pillar structures includes a post of conductive material laterally surrounded by an insulative liner. At least one of the posts extends through the conductive expanse to directly contact one of the conductive nodes. Some embodiments include methods of forming integrated assemblies.

Abstract: A fastener and a specialized driver, the fastener comprising a fastener head with aperture centered therein and fastener body extending from connection with the fastener head. The fastener body has an interior cavity along a length of the fastener body and a spring biased plunger is slidable within an interior cavity of the fastener body between a first position where the plunger has a surface configured to fit within the aperture and in a second position the plunger is spaced apart from the aperture. The driver is removably coupleable to the fastener to depress the plunger and transfer torque to the fastener for installation without damage to the fastener.

Abstract: A refuse vehicle includes a chassis, a body assembly coupled to the chassis where the body assembly defines a refuse compartment, and a lift assembly pivotably coupled to the body assembly. The lift assembly includes a first lift arm, a second lift arm, a pin having a first end coupled to the first lift arm and an opposing second end coupled to the second lift arm, a pair of forks pivotably coupled to the first lift arm and the second lift arm, an electric lift actuator coupled to the pin, and an electric fork actuator coupled to the pair of forks. The electric lift actuator is configured to rotate the pin to lift the first lift arm and the second lift arm. The electric fork actuator is configured to pivot the pair of forks relative to the first lift arm and the second lift arm.

Abstract: A refuse vehicle includes a chassis, a body assembly, and a tailgate. The body assembly is coupled to the chassis and defines a refuse compartment configured to store refuse material. The tailgate comprises a refuse receiving portion, a thresher assembly, and an electrically driven actuation mechanism. The refuse receiving portion is configured to receive refuse material. The thresher assembly includes a compaction thresher including a plurality of tines and a plurality of tine springs configured to bias the plurality of tines in a direction of compaction. The plurality of tine springs are each disposed around a corresponding tine of the plurality of tines. The electrically driven actuation mechanism is configured to selectively actuate the thresher assembly.

Abstract: In a method for printing a digital image in swaths with a swath time corresponding to the width of the digital image on the image receiving medium in the main scanning direction, the print controller issues a trigger that a spitting action for at least part of the printing elements of the print head needs to be performed. A swath time of subsequent swaths is gradually increased until the print head reaches a maintenance tray at a side of the print surface. The print head stays at the maintenance tray until air between the print head and the maintenance tray has approximately reached a standstill. Then, at least part of the printing elements of the print head are spitting marking material in the maintenance tray. After the spitting, the swath time of subsequent swaths is gradually decreased until the swath time is corresponding again with the width of the digital image on the image receiving medium in the main scanning direction. A digital inkjet printer is configured to perform the method.

Abstract: Embodiments provide for methods, computer program products, and systems to improve media playback comprising receiving a variant stream, identifying respective maximum segment durations for a plurality of different types of client devices that will play media content contained in the variant stream, generating, using the variant stream, a respective playlist for each of the plurality of different types of client devices, wherein the respective playlists each contain different maximum segment durations, and delivering the respective playlists to at least one of the plurality of different types of client devices via a distribution network.

Abstract: Electronic devices (e.g., semiconductor devices, which may be configured for 3D NAND memory devices), comprise pillars extending through a stack of alternating conductive tiers and insulative tiers. The conductive tiers, which may include control gates for access lines (e.g., word lines), include conductive rails along an outer sidewall of the conductive tiers, distal from the pillars extending through the conductive tiers. The conductive rails protrude laterally beyond outer sidewalls of the insulative tiers. The conductive rails increase the amount of conductive material that may otherwise be in the conductive tiers, which may enable the conductive material to exhibit a lower electrical resistance, improving operational performance of the electronic devices.

Abstract: In a method of controlling a digital inkjet printer, the digital printer is arranged to operate in a selected first print mode which includes a first speed in a main scanning direction. A digital image and a print setting that the digital image is planned to be printed in an enhanced adhesion print mode are received. A time period needed for a pass in the main scanning direction is extended by lowering a speed from the first speed to a second speed, and by enlarging the pass width up to a maximum medium width and/or by temporarily stopping the printer at an end of the pass. Marking material is ejected during the pass on the image receiving medium by a print head at the second speed within the extended time period, and is cured by a UV curing device at the second speed within the extended time period.

Abstract: A refuse vehicle includes a chassis, an energy storage device supported by the chassis and configured to provide electrical power to a prime mover, wherein activation of the prime mover selectively drives the refuse vehicle, a body for storing refuse therein supported by the chassis, a first hydraulic pump configured to convert electrical power into hydraulic power, a second first hydraulic pump configured to convert electrical power into hydraulic power, and a motor coupled to at least one of the body or the chassis and configured to drive the first hydraulic pump and drive the second hydraulic pump.

Abstract: A refuse vehicle comprises a chassis, a body assembly, a battery system, and a side-loading lift assembly. The body assembly is coupled to the chassis and defines a refuse compartment configured to store refuse material. The battery system is configured to be charged via at least one of an on-board electrical energy generator, an external power source, or a power regenerative braking system. The side-loading lift assembly comprises a refuse container engagement mechanism and at least one electrically-driven actuation mechanism. The refuse container engagement mechanism is configured to selectively engage a refuse container. The at least one electrically-driven actuation mechanism is powered by the battery system and is configured to selectively actuate the side-loading lift assembly between an extended position, a retracted position, and a refuse-dumping position.

Abstract: A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers above a conductor tier. Strings of memory cells comprising channel-material strings extend through the insulative tiers and the conductive tiers. The conductor tier comprises upper conductor material directly above and directly against lower conductor material of different composition from that of the upper conductor material. A through-array-via (TAV) region is included and comprises TAVs individually comprising the upper conductor material, the lower conductor material, and a conducting material that is directly below the conductor tier.

Abstract: A microelectronic device includes a stack structure, a staircase structure, conductive pad structures, and conductive contact structures. The stack structure includes vertically alternating conductive structures and insulating structures arranged in tiers. Each of the tiers individually includes one of the conductive structures and one of the insulating structures. The staircase structure has steps made up of edges of at least some of the tiers of the stack structure. The conductive pad structures are on the steps of the staircase structure and include beta phase tungsten. The conductive contact structures are on the conductive pad structures. Memory devices, electronic systems, and methods of forming microelectronic devices are also described.

Abstract: Techniques are described herein for predicting popularity metrics and/or visitation metrics that are used in the selection of a point of interest (POI) for placement of an electric vehicle charging station (EVCS). The techniques involve training a machine learning model based on information obtained about POIs at which EVCSs are already installed. The information used to train the machine learning model includes, for each existing installation location: (a) visitation data that describes visitation features, and (b) popularity metrics and/or visitation metrics that have been generated for the location. When the machine learning model has been trained, the trained machine learning model predicts popularity metrics and/or visitation metrics for a POI location at which no EVCS has been installed based on the visitation data of that POI.

Abstract: A method used in forming a memory array comprising strings of memory cells comprises forming memory block regions individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Channel-material strings extend through the insulative tiers and the conductive tiers. The conductive tiers individually comprise a void-space extending laterally-across individual of the memory-block regions. At least one of conductive or semiconductive material is formed in the void-space laterally-outward of individual of the channel-material strings. Conductive molybdenum-containing metal material is formed in the void-space directly against the at least one of the conductive or the semiconductive material and a conductive line comprising the conductive molybdenum-containing metal material is formed therefrom. The at least one of the conductive or the semiconductive material is of different composition from that of the conductive molybdenum-containing metal material.

Abstract: A microelectronic device comprises a stack structure, a memory pillar, and a boron-containing material. The stack structure comprises alternating conductive structures and dielectric structures. The memory pillar extends through the stack structure and defines memory cells at intersections of the memory pillar and the conductive structures. The boron-containing material is on at least a portion of the conductive structures of the stack structure. Related methods and electronic systems are also described.

Abstract: Electronic devices (e.g., semiconductor devices, which may be configured for 3D NAND memory devices), comprise pillars extending through a stack of alternating conductive tiers and insulative tiers. The conductive tiers, which may include control gates for access lines (e.g., word lines), include conductive rails along an outer sidewall of the conductive tiers, distal from the pillars extending through the conductive tiers. The conductive rails protrude laterally beyond outer sidewalls of the insulative tiers. The conductive rails increase the amount of conductive material that may otherwise be in the conductive tiers, which may enable the conductive material to exhibit a lower electrical resistance, improving operational performance of the electronic devices.

Abstract: Techniques are described herein for predicting popularity metrics and/or visitation metrics that are used in the selection of a point of interest (POI) for placement of an electric vehicle charging station (EVCS). The techniques involve training a machine learning model based on information obtained about POIs at which EVCSs are already installed. The information used to train the machine learning model includes, for each existing installation location: (a) visitation data that describes visitation features, and (b) popularity metrics and/or visitation metrics that have been generated for the location. When the machine learning model has been trained, the trained machine learning model predicts popularity metrics and/or visitation metrics for a POI location at which no EVCS has been installed based on the visitation data of that POI.

Abstract: Some embodiments include an integrated assembly having a conductive expanse over conductive nodes. The conductive nodes include a first composition. A bottom surface of the conductive expanse includes a second composition which is different composition than the first composition. A stack is over the conductive expanse. The stack includes alternating first and second levels. Pillar structures extend vertically through the stack. Each of the pillar structures includes a post of conductive material laterally surrounded by an insulative liner. At least one of the posts extends through the conductive expanse to directly contact one of the conductive nodes. Some embodiments include methods of forming integrated assemblies.

Abstract: Described are methods for forming a tungsten conductive structure over a substrate, such as a semiconductor substrate. Described examples include forming a silicon-containing material, such as a doped silicon-containing material, over a supporting structure. The silicon-containing material is then subsequently converted to a tungsten seed material containing the dopant material. A tungsten fill material of lower resistance will then be formed over the tungsten seed material.

Abstract: A method used in forming a memory array comprising strings of memory cells comprises forming memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Individual of the conductive tiers comprise laterally-outer edges comprising conductive molybdenum-containing metal material extending horizontally-along its memory block. Channel-material strings extend through the insulative tiers and the conductive tiers. At least one of conductive or semiconductive material is formed extending horizontally-along the memory blocks laterally-outward of the laterally-outer edges comprising the conductive molybdenum-containing metal material that extends horizontally-along its memory block. Insulator material extending horizontally-along the memory blocks is formed laterally-outward of the at least one of the conductive or the semiconductive material that is laterally-outward of the laterally-outer edges comprising the conductive molybdenum-containing metal material.