Abstract: A fastener and a specialized driver for use in furniture or shelving assembly where the fastener comprises a fastener head with an aperture centered therein and a fastener body extending from connection with the fastener head, the fastener body having an interior cavity along a length of the fastener body. A spring biased plunger is slidable within an interior cavity of the fastener body between a first position where the plunger has a surface configured to fit within the aperture and in a second position the plunger is spaced apart from the aperture. The driver is removably couplable to the fastener to depress the plunger and transfer torque to the fastener for installation. After installation, the plunger resumes a position plugging the aperture and the tolerance between the plunger and the aperture is sufficiently tight to effectively obscure any seam between the plunger and the aperture such that the fastener head surface appears continuous.

Abstract: An approach is provided for estimating electric vehicle (EV) charging station demand at specifics points of interest. A method includes determining a percentage of visitors to a point of interest (POI) that are electric vehicle (EV) drivers, a first percentage of the EV drivers qualifying as essential drivers, a second percentage of the EV drivers qualifying as opportunistic drivers. The method includes feeding input data to an inference engine, wherein the input data includes the above percentages, a number of visitors to the POI, and charge rates for the opportunistic and essential drivers. The inference engine generates output data regarding predicted EV charging demand for the POI, and generates a display based on the output data.

Abstract: An approach is provided for estimating the optimal number and mixture of types of electric vehicle (EV) charging stations (EVCS) at one or more points of interest (POIs). A method includes generating, based on an EV adoption model, an EV adoption prediction. The method includes generating, based on a mobility simulation model, a driver-type prediction that predicts percentages of EV drivers qualifying for various EV driver types. The method includes generating, based on the EV adoption prediction, the driver-type prediction, and a visitation model, a visitation prediction that predicts how many EV drivers of each type of EV driver will visit the POI. The method includes determining and displaying, based on how many EV drivers of each type of EV driver is predicted to visit the POI, for each type of EV charging station of a plurality of types of EV charging stations, an optimal number of EVCS to install.

Abstract: A mobile platform includes a base having a first surface and at least one drive wheel coupled to the base so as to movable with respect to the base first surface. A drive wheel retention mechanism is coupled to the at least one drive wheel and is structured to retain the at least one drive wheel in a first position in which the at least one drive wheel extends to a first distance from the first surface along a first side of the first surface. A plurality of roller elements is also coupled to the base and is structured to extend to a distance from the first surface along the first side of the first surface. The distance of the plurality of roller elements from the first surface is less than the first distance of the at least one drive wheel from the first surface.

Abstract: Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes a first dielectric material; a second dielectric material separated from the first dielectric material; a memory cell string including a pillar extending through the first and second dielectric materials, the pillar including a portion between the first and second dielectric materials; and a tungsten material located between the first and second dielectric materials and separated from the portion of the pillar and the first and second dielectric materials by an additional dielectric material. The additional dielectric material has a dielectric constant greater than a dielectric constant of silicon dioxide. The additional dielectric material contacts the portion of the pillar and the tungsten material.

Abstract: A microelectronic device comprises a stack structure comprising insulative levels vertically interleaved with conductive levels. The conductive levels individually comprise a first conductive structure, and a second conductive structure laterally neighboring the first conductive structure, the second conductive structure exhibiting a concentration of ?-phase tungsten varying with a vertical distance from a vertically neighboring insulative level. The microelectronic device further comprises slot structures vertically extending through the stack structure and dividing the stack structure into block structures, and strings of memory cells vertically extending through the stack structure, the first conductive structures between laterally neighboring strings of memory cells, the second conductive structures between the slot structures and strings of memory cells nearest the slot structures. Related memory devices, electronic systems, and methods are also described.

Abstract: Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes a first dielectric material; a second dielectric material separated from the first dielectric material; a memory cell string including a pillar extending through the first and second dielectric materials, the pillar including a portion between the first and second dielectric materials; an additional dielectric material contacting the portion of the pillar; a conductive material contacting the additional dielectric material; and a tungsten structure including a portion of tungsten contacting the conductive material, wherein a majority of the portion of tungsten is beta-phase tungsten.

Abstract: A microelectronic device includes a first conductive structure, a barrier structure, a conductive liner structure, and a second conductive structure. The first conductive structure is within a first filled opening in a first dielectric structure. The barrier structure is within the first filled opening in the first dielectric structure and vertically overlies the first conductive structure. The conductive liner structure is on the barrier structure and is within a second filled opening in a second dielectric structure vertically overlying the first dielectric structure. The second conductive structure vertically overlies and is horizontally surrounded by the conductive liner structure within the second filled opening in the second dielectric structure. Memory devices, electronic systems, and methods of forming microelectronic devices are also described.

Abstract: A bag includes a header, a body, a seal positioned between the header and the body, and an integral handle. The integral handle includes a central portion, a first end portion including a first end first branch and a first end second branch, and a second end portion including a second end first branch and a second end second branch. The header includes a top end generally opposing the seal. The handle is positioned between the top end and the seal. The handle is perforated, scored or cut. The first end portion and the second end portion are located at each end of the central portion.

Abstract: A bumper for a mobile platform of a guided test platform includes a first end, a second end residing opposite the first end, a first surface extending between the first and second ends, and a second surface extending between the first and second ends and residing opposite the first surface. The bumper defines a ramp structure extending between the bumper first end and the bumper second end. The ramp structure is structured to guide a wheel of a vehicle in a direction away from the first surface as the wheel moves along the second surface in a direction from the bumper first end toward the bumper second end.

Abstract: An apparatus comprising at least one contact structure. The at least one contact structure comprises a contact, an insulating material overlying the contact, and at least one contact via in the insulating material. The at least one contact structure also comprises a dielectric liner material adjacent the insulating material within the contact via, a conductive material adjacent the dielectric liner material, and a stress compensation material adjacent the conductive material and in a central portion of the at least one contact via. The stress compensation material is at least partially surrounded by the conductive material. Memory devices, electronic systems, and methods of forming the apparatus are also disclosed.

Abstract: A microelectronic device includes a stack structure, a staircase structure, conductive pad structures, and conductive contact structures. The stack structure includes vertically alternating conductive structures and insulating structures arranged in tiers. Each of the tiers individually includes one of the conductive structures and one of the insulating structures. The staircase structure has steps made up of edges of at least some of the tiers of the stack structure. The conductive pad structures are on the steps of the staircase structure and include beta phase tungsten. The conductive contact structures are on the conductive pad structures. Memory devices, electronic systems, and methods of forming microelectronic devices are also described.

Abstract: Described are methods for forming a tungsten conductive structure over a substrate, such as a semiconductor substrate. Described examples include forming a silicon-containing material, such as a doped silicon-containing material, over a supporting structure. The silicon-containing material is then subsequently converted to a tungsten seed material containing the dopant material. A tungsten fill material of lower resistance will then be formed over the tungsten seed material.

Abstract: A microelectronic device includes a first conductive structure, a barrier structure, a conductive liner structure, and a second conductive structure. The first conductive structure is within a first filled opening in a first dielectric structure. The barrier structure is within the first filled opening in the first dielectric structure and vertically overlies the first conductive structure. The conductive liner structure is on the barrier structure and is within a second filled opening in a second dielectric structure vertically overlying the first dielectric structure. The second conductive structure vertically overlies and is horizontally surrounded by the conductive liner structure within the second filled opening in the second dielectric structure. Memory devices, electronic systems, and methods of forming microelectronic devices are also described.

Abstract: An apparatus comprising at least one contact structure. The at least one contact structure comprises a contact, an insulating material overlying the contact, and at least one contact via in the insulating material. The at least one contact structure also comprises a dielectric liner material adjacent the insulating material within the contact via, a conductive material adjacent the dielectric liner material, and a stress compensation material adjacent the conductive material and in a central portion of the at least one contact via. The stress compensation material is at least partially surrounded by the conductive material. Memory devices, electronic systems, and methods of forming the apparatus are also disclosed.

Abstract: A microelectronic device includes a stack structure, a staircase structure, conductive pad structures, and conductive contact structures. The stack structure includes vertically alternating conductive structures and insulating structures arranged in tiers. Each of the tiers individually includes one of the conductive structures and one of the insulating structures. The staircase structure has steps made up of edges of at least some of the tiers of the stack structure. The conductive pad structures are on the steps of the staircase structure and include beta phase tungsten. The conductive contact structures are on the conductive pad structures. Memory devices, electronic systems, and methods of forming microelectronic devices are also described.

Abstract: This disclosure describes portable bio-nano-chip assays, methods and compositions for diagnosing trauma at point-of-care using biological samples. The assays, methods and compositions provide in a more convenient, less expensive, and less time-consuming sampling and analysis.

Abstract: A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Operative channel-material strings of memory cells extend through the insulative tiers and the conductive tiers. Upper masses comprise first material laterally-between and longitudinally-spaced-along immediately-laterally-adjacent of the memory blocks and second material laterally-between and longitudinally-spaced-along the immediately-laterally-adjacent memory blocks longitudinally-between and under the upper masses. The second material is of different composition from that of the first material. The second material comprises insulative material. Other embodiments, including method, are disclosed.

Abstract: Some embodiments include conductive interconnects which include the first and second conductive materials, and which extend upwardly from a conductive structure. Some embodiments include integrated assemblies having conductive interconnects.

Abstract: Some embodiments include an integrated assembly having a source structure, and having a stack of alternating conductive levels and insulative levels over the source structure. Cell-material-pillars pass through the stack. The cell-material-pillars are arranged within a configuration which includes a first memory-block-region and a second memory-block-region. The cell-material-pillars include channel material which is electrically coupled with the source structure. Memory cells are along the conductive levels and include regions of the cell-material-pillars. A panel is between the first and second memory-block-regions. The panel has a first material configured as a container shape. The container shape defines opposing sides and a bottom of a cavity. The panel has a second material within the cavity. The second material is compositionally different from the first material. Some embodiments include methods of forming integrated assemblies.