Abstract: An imaging device (100) configured to image a sample (102), comprising: a light source (104) emitting a light; a light deflection device configured to deflect the light emitted by the light source towards the sample, comprising a material portion (106) provided with a first main face (108) arranged opposite the sample (102), a second main face (110), and a first lateral face (112) towards which the light is emitted by the light source; an imager (118) having a detection face (122) arranged opposite the second main face and intended to receive the light backscattered by the sample; wherein one amongst the main faces is provided with oblique portions (114) each configured to deflect a portion of the received light towards the sample (102), and with planar portions (116) configured to let the light backscattered by the sample pass, and wherein each pixel (120) of the imager (118) is arranged opposite one of the planar portions (116) of said one amongst the first and second main faces (108, 110).

Abstract: A detection component is provided for detecting electromagnetic radiation, the detection component comprising a mask arranged to block the electromagnetic radiation for at least one detector. The opaque mask comprises a successive stack of a first metal layer, a second metal layer, a third transparent layer having a low optical index, and an assembly of metal components. The second metal layer, the transparent layer, and the assembly of components form MIM structures in the wavelength range. The invention further relates to a method for manufacturing such a detection component.

Abstract: An electromagnetic radiation detector structure is adapted to detect electromagnetic radiation in at least one first given range of wavelengths centred around a first wavelength ?0. The detector structure comprises an absorption region of sub-wavelength thickness configured to absorb electromagnetic radiation, the absorption region having a refractive index na, and a Fabry-Perot cavity housing the absorption region. The disclosure further concerns a method to manufacture the detector structure.

Abstract: A device having a transmission response with a maximum at a wavelength ?0, this device including an intermediate layer which extends from a first optical filter to a second optical filter, this intermediate layer having a refractive index n8 at the wavelength ?0 and a thickness h8, the refractive index n8 being less than 3 n12/5 and the thickness h8 being between ? and 3 ?, where the refractive index n12 is greater than 5 n10/3, where n10 is the greatest of the refractive indices chosen from the group consisting of the refractive indices at the wavelength ?0 of the media situated at the interface with the first filter, and the coefficient ? is defined by the following relationship: 1/?=(2 ?n8/?0)((?0/(n8P))2?1)0.5, where P is the period of a grating of slits of the first filter.

Abstract: The invention relates to a detection component (1) for detecting electromagnetic radiation comprising at least one mask (140) arranged to block the electromagnetic radiation for at least one of the detection structures (122). The opaque mask (140) comprises a successive stack of a first metal layer (141), a second metal layer (142), a third transparent layer (143) having a low optical index, and an assembly of metal elements (144). The second metal layer (142), the transparent layer (143), and the assembly of metal elements (144) form MIM structures in the wavelength range. The invention further relates to a method for manufacturing such a component (1).

Abstract: An electromagnetic radiation detector structure is adapted to detect electromagnetic radiation in at least one first given range of wavelengths centred around a first wavelength ?0. The detector structure comprises an absorption region of sub-wavelength thickness configured to absorb electromagnetic radiation, the absorption region having a refractive index na, and a Fabry-Perot cavity housing the absorption region. The disclosure further concerns a method to manufacture the detector structure.

Abstract: The invention relates to a process for fabricating an optoelectronic device (1) comprising a plurality of diodes (40), comprising the following steps: providing a readout substrate (10) containing a readout circuit (12) and having a growth face defined by a plurality of conductive segments (20) that are separate from one another and connected to the readout circuit (12); producing, on the growth face, a plurality of nucleation segments (30) made of a two-dimensional crystalline material, which segments are separate from one another, said segments resting in contact with the conductive segments (20); producing, by epitaxy from the nucleation segments (30), the plurality of diodes.

Abstract: A method for creating a photovoltaic cell, includes forming a first doped region in a semiconductor substrate having a first concentration of doping elements; forming, by ion implantation, alignment units, the largest size of which is smaller than one millimeter, and a second doped region, adjacent to the first region with a second concentration of doping elements; heat-treating the substrate to activate the doping elements and to form an oxide layer at the surface of the substrate, the second concentration and the heat treatment conditions being selected such that the oxide layer has a thickness above the alignment units that is larger, by at least 10 nm, than the thickness of the oxide layer above an area of the substrate adjacent to the alignment units; depositing an antireflection layer onto the oxide layer; and depositing an electrode onto the antireflection coating, through a screen, opposite the second region.

Abstract: A method for creating a photovoltaic cell, includes forming a first doped region in a semiconductor substrate having a first concentration of doping elements; forming, by ion implantation, alignment units, the largest size of which is smaller than one millimeter, and a second doped region, adjacent to the first region with a second concentration of doping elements; heat-treating the substrate to activate the doping elements and to form an oxide layer at the surface of the substrate, the second concentration and the heat treatment conditions being selected such that the oxide layer has a thickness above the alignment units that is larger, by at least 10 nm, than the thickness of the oxide layer above an area of the substrate adjacent to the alignment units; depositing an antireflection layer onto the oxide layer; and depositing an electrode onto the antireflection coating, through a screen, opposite the second region.

Abstract: A photovoltaic module including a plate transparent to the incident electromagnetic radiation, a photovoltaic cell including an active face arranged facing said transparent plate, a spectral conversion element including a luminescent material formed by at least a first spectral conversion area arranged facing a lateral face of the photovoltaic cell, a direct transmission area separating the transparent plate from the photovoltaic cell, the spectral conversion element including a second spectral conversion area extending the first spectral conversion area, the second spectral conversion area being positioned on the peripheral edge of the active face of the photovoltaic cell, so that the part of the active face of the photovoltaic cell directly receiving the incident electromagnetic radiation represents between 40% and 90% of the total surface of the active face of the photovoltaic cell.

Abstract: A photovoltaic module including a plate transparent to the incident electromagnetic radiation, a photovoltaic cell including an active face arranged facing said transparent plate, a spectral conversion element including a luminescent material formed by at least a first spectral conversion area arranged facing a lateral face of the photovoltaic cell, a direct transmission area separating the transparent plate from the photovoltaic cell, the spectral conversion element including a second spectral conversion area extending the first spectral conversion area, the second spectral conversion area being positioned on the peripheral edge of the active face of the photovoltaic cell, so that the part of the active face of the photovoltaic cell directly receiving the incident electromagnetic radiation represents between 40% and 90% of the total surface of the active face of the photovoltaic cell.

Abstract: The invention relates to a monofrequency optical filter, including reflective elements which are formed on one surface of a dielectric support layer and which define at least one periodic array of parallel grooves passing across same. The periodicity, height, and width of said periodic groove array are selected so as to form a structure, the wavelength of which can be selected from within a predetermined range of wavelengths. According to the invention, the thickness and refractive index of the support layer are selected so that said layer forms a half-wave plate for a wavelength of the predetermined wavelength range. The filter, when in contact with the surface of the support layer opposite the surface on which the groove array is formed, includes a medium, the refractive index of which is less than that of the support layer so as to obtain a guided mode that resonates in the support layer.

Abstract: This photodetector capable of detecting electromagnetic radiation comprises: a doped semiconductor absorption layer for said radiation, capable of converting said radiation into charge carriers; a reflective layer that reflects the incident radiation that is not absorbed by semiconductor layer towards the latter, located underneath semiconductor layer; and a metallic structure placed on semiconductor layer that forms, with semiconductor layer, a surface Plasmon resonator so as to concentrate the incident electromagnetic radiation on metallic structure in the field concentration zones of semiconductor layer. Semiconductor zones for collecting charge carriers that are oppositely doped to the doping of semiconductor layer are formed in said semiconductor layer and have a topology that complements that of the field concentration zones.

Abstract: This photodetector comprises a doped semiconductor layer; a reflective layer located underneath semiconductor layer; a metallic structure placed on semiconductor layer that forms, with semiconductor layer, a surface plasmon resonator, a plurality of semiconductor zones formed in semiconductor layer and oppositely doped to the doping of the semiconductor layer; and for each semiconductor zone, a conductor that passes through the photodetector from reflective layer to at least semiconductor zone and is electrically insulated from metallic structure, with semiconductor zone associated with corresponding conductor thus determining an elementary detection surface of the photodetector.

Abstract: The instant disclosure describes a photodetector that includes at least one portion of a semiconducting layer formed directly on at least a portion of a reflective layer and to be illuminated with a light beam, at least one pad being formed on the portion of the semiconducting layer opposite the reflective layer portion, wherein the pad and the reflective layer portion are made of a metal or of a negative permittivity material, the optical cavity formed between said at least one reflective layer portion and said at least one pad has a thickness strictly lower than a quarter of the ratio of the light beam wavelength to the optical index of the semiconducting layer, and typically representing about one tenth of said ratio.

Abstract: Backlit detector for the detection of electromagnetic radiation around a predetermined wavelength, including a semiconductor absorption layer, formed above a transparent medium, capable of transmitting at least some of said radiation, and a mirror above the semiconductor layer, and placed between the mirror and the semiconductor layer, a periodic grating of metallic patterns, the mirror and the grating being included in a layer of material transparent to said radiation and formed on the semiconductor layer.

Abstract: An integrated optical coupler including in the medium separating a first integrated waveguide from a second substantially parallel integrated waveguide, a succession of strips parallel to one another and orthogonal to the general direction of the waveguides, said strips being made of a material having an absorption preventing the propagation of an electromagnetic wave across its volume, and having: a length H equal to k?/2nmedium, where k is an integer, ? is the central wavelength used, and nmedium is the optical index of the medium between the waveguides; a period P smaller than ?/2nmedium; and ends at a distance shorter than ?/10 from the waveguides.

Abstract: The invention relates to a monofrequency optical filter, including reflective elements which are formed on one surface of a dielectric support layer and which define at least one periodic array of parallel grooves passing across same. The periodicity, height, and width of said periodic groove array are selected so as to form a structure, the wavelength of which can be selected from within a predetermined range of wavelengths. According to the invention, the thickness and refractive index of the support layer are selected so that said layer forms a half-wave plate for a wavelength of the predetermined wavelength range. The filter, when in contact with the surface of the support layer opposite the surface on which the groove array is formed, includes a medium, the refractive index of which is less than that of the support layer so as to obtain a guided mode that resonates in the support layer.

Abstract: Backlit detector for the detection of electromagnetic radiation around a predetermined wavelength, including a semiconductor absorption layer, formed above a transparent medium, capable of transmitting at least some of said radiation, and a minor above the semiconductor layer, and placed between the minor and the semiconductor layer, a periodic grating of metallic patterns, the minor and the grating being included in a layer of material transparent to said radiation and formed on the semiconductor layer.

Abstract: An element of photodetection of a radiation having a wavelength in vacuum close to a value ?0, including: a semiconductor layer of index ns and of a thickness ranging between ?0/4 ns and ?0/20 ns; on one side of the semiconductor layer, a first medium of index n1 smaller than ns, transparent to said wavelength; on the other side of the semiconductor layer: a region of a second medium of index n2 smaller than ns, having a width L substantially equal to ?0/ns and, on either side of said region, a third medium, of index n3 greater than index n2, forming a reflective interface with the second medium.