Abstract: The instant disclosure describes a photodetector that includes at least one portion of a semiconducting layer formed directly on at least a portion of a reflective layer and to be illuminated with a light beam, at least one pad being formed on the portion of the semiconducting layer opposite the reflective layer portion, wherein the pad and the reflective layer portion are made of a metal or of a negative permittivity material, the optical cavity formed between said at least one reflective layer portion and said at least one pad has a thickness strictly lower than a quarter of the ratio of the light beam wavelength to the optical index of the semiconducting layer, and typically representing about one tenth of said ratio.

Abstract: An integrated optical coupler including in the medium separating a first integrated waveguide from a second substantially parallel integrated waveguide, a succession of strips parallel to one another and orthogonal to the general direction of the waveguides, said strips being made of a material having an absorption preventing the propagation of an electromagnetic wave across its volume, and having: a length H equal to k?/2nmedium, where k is an integer, ? is the central wavelength used, and nmedium is the optical index of the medium between the waveguides; a period P smaller than ?/2nmedium; and ends at a distance shorter than ?/10 from the waveguides.

Abstract: This photodetector capable of detecting electromagnetic radiation comprises: a doped semiconductor absorption layer for said radiation, capable of converting said radiation into charge carriers; a reflective layer that reflects the incident radiation that is not absorbed by semiconductor layer towards the latter, located underneath semiconductor layer; and a metallic structure placed on semiconductor layer that forms, with semiconductor layer, a surface Plasmon resonator so as to concentrate the incident electromagnetic radiation on metallic structure in the field concentration zones of semiconductor layer. Semiconductor zones for collecting charge carriers that are oppositely doped to the doping of semiconductor layer are formed in said semiconductor layer and have a topology that complements that of the field concentration zones.

Abstract: This photodetector comprises a doped semiconductor layer; a reflective layer located underneath semiconductor layer; a metallic structure placed on semiconductor layer that forms, with semiconductor layer, a surface plasmon resonator, a plurality of semiconductor zones formed in semiconductor layer and oppositely doped to the doping of the semiconductor layer; and for each semiconductor zone, a conductor that passes through the photodetector from reflective layer to at least semiconductor zone and is electrically insulated from metallic structure, with semiconductor zone associated with corresponding conductor thus determining an elementary detection surface of the photodetector.

Abstract: An element of photodetection of a radiation having a wavelength in vacuum close to a value ?0, including: a semiconductor layer of index ns and of a thickness ranging between ?0/4 ns and ?0/20 ns; on one side of the semiconductor layer, a first medium of index n1 smaller than ns, transparent to said wavelength; on the other side of the semiconductor layer: a region of a second medium of index n2 smaller than ns, having a width L substantially equal to ?0/ns and, on either side of said region, a third medium, of index n3 greater than index n2, forming a reflective interface with the second medium.