Abstract: An optoelectronic device including an array of axial light-emitting diodes. The light-emitting diodes each include an active area configured to emit an electromagnetic radiation having an emission spectrum including a maximum at a first wavelength. The array forms a photonic crystal configured to be able to form three resonance peaks amplifying the intensity of said electromagnetic radiation at at least second, third, and fourth wavelengths.

Abstract: An optoelectronic device including an array of axial light-emitting diodes, the light-emitting diodes each including an active area configured to emit an electromagnetic radiation having an emission spectrum comprising a maximum at a first wavelength, the array forming a photonic crystal configured to form a resonance peak amplifying the intensity of said electromagnetic radiation at at least one second wavelength different from the first wavelength.

Abstract: A method for manufacturing three-dimensional (3D) structures for optoelectronics, each 3D structure including, in a stack along (z), a bottom part bearing on a substrate, an active region configured to emit light radiation, said active region bearing on a top of the bottom part, and a top part bearing on a top of the active region, the method including provision of a substrate carrying a plurality of bottom parts of 3D structures, said bottom parts having distinct tops such that the tops of two adjacent bottom parts are separated from each other by a separation distance ds of less than 180 nm, formation by metalorganic vapour-phase epitaxy (MOVPE) of the active regions on the tops of the bottom parts, formation of the top parts on the tops of the active regions. An embodiment also relates to an optoelectronic device based on a plurality of these 3D structures.

Abstract: An optoelectronic device including an array of axial light-emitting diodes (LED), each including an active area configured to emit electromagnetic radiation whose emission spectrum includes a maximum at a first wavelength. The device further includes a cladding for each LED, transparent to said radiation of a first material surrounding the sidewalls of the LED over at least a portion of the LED, each cladding having a thickness greater than 10 nm. The device further comprises layer, between the claddings, transparent to said radiation, made of a second material different from the first material, the second material being electrically insulating, the array forming a photonic crystal.

Abstract: A method for manufacturing an optoelectronic device having a substrate and, on a first face of the substrate, at least one stack, in a longitudinal direction, of at least one injection layer of a first type of carriers and an active layer. The method including formation of a growth mask on the first face of the substrate, the growth mask having an opening in the longitudinal direction through which the first face is exposed, formation, from the exposed zone of the substrate, of the injection layer of the first type of carriers within the opening, formation of the active layer on the injection layer, within the opening, such that the active layer is confined in the opening and does not extend outside of the opening. One or more embodiment also relates to an optoelectronic device having an active layer confined in an opening of a growth mask.

Abstract: A three-dimensional (3D) structure for optoelectronics including a pyramid made of a first InGaN-based material formed from a substrate, wherein the 3D structure includes a wire made of a second GaN-based material, different from the first material, the wire extending in a longitudinal direction perpendicular to the plane of the substrate between the substrate and a base of the InGaN-based pyramid, so that the 3D structure has the general shape of a pencil. One or more embodiments of the invention also relates to a method for manufacturing such a 3D structure, and an optoelectronic device based on a plurality of these 3D structures.

Abstract: A method of manufacturing a device including micrometer- or nanometer-range wires including a III-V compound, including, for each wire, the forming of at least a portion of the wire by a step of metal-organic vapor epitaxy including the injection into a reactor of a first precursor gas of the group-V element, of a second precursor gas of the group-III element, and of a third precursor gas of an additional element, dopant of the III-V compound, of a gas capable of obtaining a dopant concentration greater than 5.1019 atoms/cm3, for example, greater than 1.1020 atoms/cm3, in the wire portion in the case where the portion has a homogeneous dopant concentration.

Abstract: A method for manufacturing an optoelectronic device including forming, by metal-organic chemical vapor deposition, MOCVD, wire-shaped, conical, or frustoconical semiconductor elements made of a III-V compound, doped or undoped, each semiconductor element extending along an axis and including a top, and forming by remote plasma chemical vapor deposition, RPCVD, or by molecular-beam epitaxy, MBE, or by hydride vapor phase epitaxy, HVPE, for each semiconductor element, an active area only on said top including at least a first semiconductor layer made of the III-V compound and a second semiconductor layer made of the III-V compound and an additional group-III element.

Abstract: A light emitting diode (LED) having an active region and a three-dimensional (3D) structure. The 3D LED includes a first GaN-based layer having a first content of Aluminium and a first content of Indium, and a second GaN-based layer interposed between and in contact with the first layer and the active region, having a second content of Aluminium and a second content of Indium, the second content of indium being strictly higher than the first content of indium so as to promote the formation of misfit dislocations at an interface between the first and second layers. Advantageously, the active region and the first and second layers extend along semi-polar crystallographic planes. Also described is a method for manufacturing such a 3D LED.

Abstract: An optoelectronic device includes first and second light-emitting diodes, each LED having: a first semiconductor portion, with a first type of doping, having a wire-like shape along an axis and having side surfaces parallel to this axis; an active portion arranged at least partially on a top end of the first portion; and a second semiconductor portion, with a second type of doping, arranged at least partially on all or part of the active portion. The optoelectronic device further includes an electrically resistive layer having an electrical resistance that is higher than that of the active portion, covering at least all or part of the side surfaces of the first portion and all or part of the surface of the top end of the first portion not covered by the active portion. The resistive layers of the first and second LEDs are separated from one another.

Abstract: Deposition methods using Cl-based precursors to produce III-nitride materials are generally described.

Abstract: Deposition methods using a Ga-based alloy to incorporate dopants into GaN-based materials are generally described.

Abstract: A pseudosubstrate for an optoelectronic device suitable for the growth of light-emitting diodes including a substrate and a buffer structure formed on an upper face of the substrate. The buffer structure includes at least one first portion wherein one layer made of solid gallium nitride (GaN) delimits at least one free surface of a first type facing away from the upper face of the substrate, each free surface of the first type being suitable for the growth on same of at least one light-emitting diode mostly based on a III-V compound capable of emitting light at a first wavelength.

Abstract: A pseudosubstrate for an optoelectronic device suitable for the growth of light-emitting diodes including a substrate and a buffer structure formed on an upper face of the substrate. The buffer structure includes at least one first portion wherein one layer made of solid gallium nitride (GaN) delimits at least one free surface of a first type facing away from the upper face of the substrate, each free surface of the first type being suitable for the growth on same of at least one light-emitting diode mostly based on a III-V compound capable of emitting light at a first wavelength.

Abstract: Methods and apparatus for producing a gallium nitride semiconductor on insulator structure include: bonding a single crystal silicon layer to a transparent substrate; and growing a single crystal gallium nitride layer on the single crystal silicon layer.

Abstract: Methods and apparatus for producing a gallium nitride semiconductor on insulator structure include: bonding a single crystal silicon layer to a transparent substrate; and growing a single crystal gallium nitride layer on the single crystal silicon layer.

Abstract: Multi-quantum well laser structures are provided comprising active and/or passive MQW regions. Each of the MQW regions comprises a plurality of quantum wells and intervening barrier layers. Adjacent MQW regions are separated by a spacer layer that is thicker than the intervening barrier layers. The bandgap of the quantum wells is lower than the bandgap of the intervening barrier layers and the spacer layer. The active region may comprise active and passive MQWs and be configured for electrically-pumped stimulated emission of photons or it may comprises active MQW regions configured for optically-pumped stimulated emission of photons.

Abstract: Multi-quantum well laser structures are provided comprising active and/or passive MQW regions. Each of the MQW regions comprises a plurality of quantum wells and intervening barrier layers. Adjacent MQW regions are separated by a spacer layer that is thicker than the intervening barrier layers. The bandgap of the quantum wells is lower than the bandgap of the intervening barrier layers and the spacer layer. The active region may comprise active and passive MQWs and be configured for electrically-pumped stimulated emission of photons or it may comprises active MQW regions configured for optically-pumped stimulated emission of photons.

Abstract: Multi-quantum well laser structures are provided comprising active and/or passive MQW regions. Each of the MQW regions comprises a plurality of quantum wells and intervening barrier layers. Adjacent MQW regions are separated by a spacer layer that is thicker than the intervening barrier layers. The bandgap of the quantum wells is lower than the bandgap of the intervening barrier layers and the spacer layer. The active region may comprise active and passive MQWs and be configured for electrically-pumped stimulated emission of photons or it may comprises active MQW regions configured for optically-pumped stimulated emission of photons.

Abstract: A semiconductor laser device operable to emit light having a desired wavelength in the green spectral range. The semiconductor laser device may include a pumping source and a laser structure including a substrate, a first cladding layer, and one or more active region layers. The one or more active region layers include a number of quantum wells having a spontaneous emission peak wavelength that is greater than about 520 nm at a reference pumping power density. The pumping source is configured to pump each quantum well at a pumping power density such that a stimulated emission peak of each quantum well is within the green spectral range, and the number of quantum wells within the one or more active region layers is such that a net optical gain of the quantum wells is greater than a net optical loss coefficient at the desired wavelength in the green spectral range.