Abstract: A laser activated remote phosphor system may include a radiation source configured to emit excitation radiation and a conversion element which has a phosphor and is able to be irradiated by the excitation radiation. An input coupling surface of the conversion element has a delimitation line beyond which a central excitation spot of the excitation radiation radiates at least in sections.

Abstract: In various embodiments, a conversion device is provided. The conversion device may include a phosphor element made of a phosphor element material for converting pump radiation into conversion radiation; and a scattering element embodied as a volume scatterer. The scattering element is arranged in direct optical contact with the phosphor element in order to be transilluminated by the conversion radiation. The phosphor element material is present in monocrystalline form in the phosphor element over a volume of at least 1×10?2 mm3.

Abstract: Various embodiments relate to an optoelectronic component, including a carrier element, on which at least one optoelectronic semiconductor chip is arranged, and a cover, which is mounted on the carrier element in a region extending circumferentially around the semiconductor chip and together with the carrier element forms a sealed cavity in which the at least one optoelectronic semiconductor chip is arranged in an inert gas.

Abstract: A light source arrangement is provided. The light source arrangement may include a plurality of semiconductor laser light sources, each having an optical axis. The semiconductor laser light sources are arranged in such a way that their optical axes are oriented parallel to one another so that respective laser light emission sides of the semiconductor laser light sources point in the same spatial direction. The light source arrangement may further include a deflection unit configured to collect and influence beam paths of the laser light emitted by the semiconductor laser light sources in order to form a beam bundle. The semiconductor laser light sources are arranged on a surface of a carrier, distributed at least two-dimensionally over the surface.

Abstract: A method for producing a lighting device may include: providing a first mount, fastening a second mount to the first mount, at least partially severing the second mount into at least two parts after fastening of the second mount to the first mount, and fastening at least two luminescence diode chips to that side of the second mount which is remote from the first mount.

Abstract: An optoelectronic semiconductor component includes: at least one optoelectronic semiconductor chip, a leadframe having one a plurality of leadframe parts, at least two electrical connection means via which the semiconductor chip is electrically contact-connected to the leadframe, and a potting body, which is fitted to the leadframe and mechanically supports the latter, wherein the one or at least one of the leadframe parts is provided with a reflective coating at a top side, the semiconductor chip is fitted on the reflective coating at the top side, the leadframe includes at least two contact locations, onto which the connection means are directly fitted, and the contact locations are formed from a material that is different from the reflective coating.

Abstract: The lighting device has at least one LED chip that is potted by means of a potting compound, which potting compound has a light-transmissive, castable and curable matrix material comprising scattering volumes as filler material, wherein the scattering volumes are distributed inhomogeneously over a thickness of the potting compound and these scattering volumes have a lower density than the matrix material in its castable state. A method is used for producing a lighting device, which comprises at least one LED chip, by means of at least the following steps: potting the at least one LED chip by means of a potting compound containing scattering volumes, wherein the scattering volumes have a lower density than a matrix material of the potting compound in this state; curing the potting compound so that an inhomogeneous distribution of the scattering volumes is obtained owing to floating of the scattering volumes in the matrix material.

Abstract: In various embodiments, a lighting device includes at least one laser light source and a light wavelength conversion element. The light wavelength conversion element includes phosphor which is arranged on a surface region of a substrate and is used for wavelength conversion of the light emitted by the at least one laser light source. The light wavelength conversion element has a greater thickness at the edge of the surface region, provided with phosphor, of the substrate than at the surface centroid of the surface region, provided with phosphor, of the substrate. The thickness is respectively measured perpendicularly to the surface region, provided with phosphor, of the substrate.

Abstract: A light source arrangement is provided. The light source arrangement may include a plurality of semiconductor laser light sources, each having an optical axis. The semiconductor laser light sources are arranged in such a way that their optical axes are oriented parallel to one another so that respective laser light emission sides of the semiconductor laser light sources point in the same spatial direction. The light source arrangement may further include a deflection unit configured to collect and influence beam paths of the laser light emitted by the semiconductor laser light sources in order to form a beam bundle. The semiconductor laser light sources are arranged on a surface of a carrier, distributed at least two-dimensionally over the surface.

Abstract: In various embodiments, a lighting device includes at least one laser light source and a light wavelength conversion element. The light wavelength conversion element includes phosphor which is arranged on a surface region of a substrate and is used for wavelength conversion of the light emitted by the at least one laser light source. The light wavelength conversion element has a greater thickness at the edge of the surface region, provided with phosphor, of the substrate than at the surface centroid of the surface region, provided with phosphor, of the substrate. The thickness is respectively measured perpendicularly to the surface region, provided with phosphor, of the substrate.

Abstract: A method for producing a lighting device may include: providing a first mount, fastening a second mount to the first mount, at least partially severing the second mount into at least two parts after fastening of the second mount to the first mount, and fastening at least two luminescence diode chips to that side of the second mount which is remote from the first mount.

Abstract: Various embodiments relate to an optoelectronic component, including a carrier element, on which at least one optoelectronic semiconductor chip is arranged, and a cover, which is mounted on the carrier element in a region extending circumferentially around the semiconductor chip and together with the carrier element forms a sealed cavity in which the at least one optoelectronic semiconductor chip is arranged in an inert gas.

Abstract: A light-emitting diode arrangement may include a first layer structure including at least one epitaxially formed light-emitting diode, and at least one second layer structure including at least one epitaxially formed light-emitting diode, wherein the at least one second layer structure is arranged on the first layer structure, and wherein contact faces of the at least one epitaxially formed light-emitting diode in the respective layer structure face contact faces of the at least one epitaxially formed light-emitting diode of the layer structure arranged directly therebelow or thereabove.

Abstract: An optoelectronic semiconductor component includes: at least one optoelectronic semiconductor chip, a leadframe having one a plurality of leadframe parts, at least two electrical connection means via which the semiconductor chip is electrically contact-connected to the leadframe, and a potting body, which is fitted to the leadframe and mechanically supports the latter, wherein the one or at least one of the leadframe parts is provided with a reflective coating at a top side, the semiconductor chip is fitted on the reflective coating at the top side, the leadframe includes at least two contact locations, onto which the connection means are directly fitted, and the contact locations are formed from a material that is different from the reflective coating.

Abstract: An arrangement includes a semiconductor chip, which is designed to emit light during operation, and a cover layer, which lies across from the light-emitting surface of the semiconductor chip, such that light emitted from the semiconductor chip penetrates into the cover layer. In an area of the cover layer, overlapping with the chip, a light deflecting structure is provided by means of which light penetrating into the cover layer is deflected. The cover layer acts as an optical waveguide and is designed to emit the light such that it is distributed over the upper surface of cover layer.

Abstract: The invention relates to a method for producing an optical and a radiation-emitting component by a molding process, and to an optical and a radiation-emitting component having well-defined viscosity.

Abstract: A semiconductor based component with radiation-emitting properties. A glass substrate (1) is provided, which has a first surface (2) and a second surface (1), where a semiconductor element (5) with radiation-emitting properties is accommodated on the first surface (2). Also disclosed is a method for fabricating a semiconductor based component, with the following steps: providing a glass substrate (1), application of a semiconductor element (5) to the first surface (2) of the glass substrate. Also disclosed is a receptacle for a semiconductor based component in which two electrical contact areas (13) are provided, which can be electrically connected to contact areas (7) of the semiconductor based component.

Abstract: An arrangement includes a semiconductor chip, which is designed to emit light during operation, and a cover layer, which lies across from the light-emitting surface of the semiconductor chip, such that light emitted from the semiconductor chip penetrates into the cover layer. In an area of the cover layer, overlapping with the chip, a light deflecting structure is provided by means of which light penetrating into the cover layer is deflected. The cover layer acts as an optical waveguide and is designed to emit the light such that it is distributed over the upper surface of cover layer.

Abstract: To secure an optical lens over an optoelectronic transmitter or receiver, it is proposed to use a UV-initiated or photoinitiated, cationically curing epoxy resin, by means of which the bonded joint can be set and thereby fixed in a few seconds. Also proposed, for use as adhesives, are resin compositions that can be applied as liquids, are optically matched, and are optimized for durable, reliable use in optoelectronic components and for the large-scale manufacture thereof.