Patent number: 7442407
Abstract: Tantalum and niobium compounds having the general formula (I) and their use for the chemical vapour deposition process are described: wherein M stands for Nb or Ta, R1 and R2 C1 to C12 alkyl, C5 to C12 cycloalkyl, C6 to C10 aryl radicals, 1-alkenyl, 2-alkenyl, 3-alkenyl, triorganosilyl radicals —SiR3, or amino radicals NR2 R3 is C1 to C8 alkyl, C5 to C10 cycloalkyl, C6 to C14 aryl radical, or SiR3 or NR2, R4 denotes Cl, Br, I, NIH—R5 where R5 is C1 to C8 alkyl, C5 to C10 cycloalkyl or C6 to C10 aryl radical, or O—R6 where R6=optionally substituted C1 to C11 alkyl, C5 to C10 cycloalkyl, C6 to C10 aryl radical, or —SiR3, or BH4, or an allyl radical, or an indenyl radical, or an benzyl radical, or an cyclopentadienyl radical, or —NIR—NR?R? (hydrazido(-1), wherein R, R? and R? have the aforementioned meaning of R, or CH2SiMe3, pseudohalide, or silylamide —N(SiMe3)2, and R7 and R8 are H, C1 to C12 alkyl, C5 to C12 cycloalkyl or C6 to C10 aryl radicals.
Type:
Grant
Filed:
July 7, 2006
Date of Patent:
October 28, 2008
Assignee:
H.C. Starck GmbH
Inventors:
Knud Reuter, Jörg Sundermeyer, Alexei Merkoulov, Wolfgang Stolz, Kerstin Volz, Michael Pokoj, Thomas Ochs