Abstract: A beam separator device (200) is described.

Abstract: A system for inspecting and reviewing a sample, the system may include a chamber that is arranged to receive the sample and to maintain vacuum within the chamber during at least a scan period; an inspection unit; a review unit; and a mechanical stage for moving the sample, according to a scan pattern and during the scan period, in relation to the inspection unit and the review unit while a spatial relationship between the inspection unit and the review unit remains unchanged; wherein the inspection unit is arranged to detect, during the scan period, multiple suspected defects of the sample; and wherein the review unit is arranged to (a) receive, during the scan period, information about the multiple suspected defects; and (b) locate, during the scan period and in response to the information about the multiple suspected defects, at least one actual defect.

Abstract: The present disclosure provides a charged particle source arrangement for a charged particle beam device. The charged particle source arrangement includes: a first vacuum region and a second vacuum region; a charged particle source in the first vacuum region wherein the charged particle source is configured to generate a primary charged particle beam; and a membrane configured to provide a gas barrier between the first vacuum region and the second vacuum region, and wherein the membrane is configured to let at least a portion of the primary charged particle beam pass through the membrane, wherein a first vacuum generation device is connectable to the first vacuum region and a second vacuum generation device is connectable to the second vacuum region.

Abstract: A scanning charged particle beam apparatus is described. The scanning charged particle beam apparatus includes a charged particle beam source configured for generating a primary charged particle beam; an objective lens configured for forming a probe on a specimen; a scanning deflection assembly configured for scanning the probe over a surface of the specimen; and an aberration correction aperture, wherein the aberration correction aperture includes an aperture body having a transparent aperture portion configured for having the primary charged particle beam pass through the transparent aperture portion; and a membrane portion including a solid material, wherein the membrane portion is provided at the transparent aperture portion and wherein the membrane portion is configured for having the primary charged particle beam pass through the solid material, wherein the membrane portion has a varying thickness.

Abstract: A charged particle beam device is provided which includes a primary beam source device adapted for generating a primary charged particle beam, a mirror corrector device adapted for providing compensation of spherical and/or chromatic aberrations, a first beam separator adapted for transmitting the primary charged particle beam to the mirror corrector device and for separating the primary charged particle beam from a compensating primary charged particle beam reflected by the mirror corrector device, wherein the first beam separator has a magnetic deflector configured to generate at least one dipole magnetic field, an objective lens adapted for focusing the compensating primary charged particle beam onto a specimen, and a second beam separator adapted for transmitting the compensating primary charged particle beam to the specimen and for separating the compensating primary charged particle beam from a secondary charged particle beam originating from the specimen.

Abstract: According to an embodiment, a method of operating a charged particle beam device is provided. The charged particle beam device includes a beam separation unit, a first optical component distanced from the beam separation unit and a second optical component distanced from the beam separation unit and distanced from the first optical component. The method includes generating a primary charged particle beam. The method further includes generating a first electric field and a first magnetic field in the beam separation unit. The method further includes guiding the primary charged particle beam through the beam separation unit in which the first electric field and the first magnetic field are generated, wherein a travel direction of the primary charged particle beam leaving the beam separation unit is aligned with a first target axis under the influence of the first electric field and the first magnetic field.

Abstract: According to an embodiment, a method of operating a charged particle beam device is provided. The charged particle beam device includes a beam separation unit, a first optical component distanced from the beam separation unit and a second optical component distanced from the beam separation unit and distanced from the first optical component. The method includes generating a primary charged particle beam. The method further includes generating a first electric field and a first magnetic field in the beam separation unit. The method further includes guiding the primary charged particle beam through the beam separation unit in which the first electric field and the first magnetic field are generated, wherein a travel direction of the primary charged particle beam leaving the beam separation unit is aligned with a first target axis under the influence of the first electric field and the first magnetic field.

Abstract: A charged particle beam device is described. In one aspect, the charged particle beam device includes a charged particle beam source, and a switchable multi-aperture for generating two or more beam bundles from a charged particle beam which includes: two or more aperture openings, wherein each of the two or more aperture openings is provided for generating a corresponding beam bundle of the two or more beam bundles; a beam blanker arrangement configured for individually blanking the two or more beam bundles; and a stopping aperture for blocking beam bundles. The device further includes a control unit configured to control the individual blanking of the two or more beam bundles for switching of the switchable multi-aperture and an objective lens configured for focusing the two or more beam bundles on a specimen or wafer.

Abstract: An evaluation system that includes a miniature module that comprises a miniature objective lens and a miniature supporting module; wherein the miniature supporting module is arranged, when placed on a sample, to position the miniature objective lens at working distance from the sample; wherein the miniature objective lens is arranged to gather radiation from an area of the sample when positioned at the working distance from the sample; a sensor arranged to detect radiation that is gathered by the miniature objective lens to provide detection signals indicative of the area of the sample.

Abstract: A charged particle beam specimen inspection system is described. The system includes an emitter for emitting at least one charged particle beam, a specimen support table configured for supporting the specimen, an objective lens for focusing the at least one charged particle beam, a charge control electrode provided between the objective lens and the specimen support table, wherein the charge control electrode has at least one aperture opening for the at least one charged particle beam, and a flood gun configured to emit further charged particles for charging of the specimen, wherein the charge control electrode has a flood gun aperture opening at which a conductive membrane is provided which is positioned between the flood gun and the specimen support table.

Abstract: A method of operating a charged particle beam device is provided. The charged particle beam device includes a beam separator that defines an optical axis, and includes a magnetic beam separation portion and an electrostatic beam separation portion. The method includes generating a primary charged particle beam, and applying a voltage to a sample, the voltage being set to a first value to determine a first landing energy of the primary charged particle beam. The method further includes creating an electric current in the magnetic beam separation portion, the current being set to a first value to generate a first magnetic field, and applying a voltage to the electrostatic beam separation portion, the voltage being set to a first value to generate a first electric field.

Abstract: A multi-beam scanning electron beam device (100) is described. The multi-bea scanning electron beam device having a column, includes a multi-beam emitter (110) for emitting a plurality of electron beams (12,13,14), at least one common electron beam optical element (130) having a common opening for at least two of the plurality of electron beams and being adapted for commonly influencing at least two of the plurality of electron beams, at least one individual electron beam optical element (140) for individually influencing the plurality of electron beams, a common objective lens assembly (150) for focusing the plurality of electrons beams having a common excitation for focusing at least two of the plurality of electron beams, and adapted for focusing the plurality of electron beams onto a specimen (20) for generation of a plurality of signal beams (121, 131,141), and a detection assembly (170) for individually detecting each signal beam on a corresponding detection element.

Abstract: A secondary charged particle detection system for a charged particle beam device is described. The detection system includes a beam splitter for separating a primary beam and a secondary beam formed upon impact on a specimen; a beam bender for deflecting the secondary beam; a focusing lens for focusing the secondary beam; a detection element for detecting the secondary beam particles, and three deflection elements, wherein at least a first deflector is provided between the beam bender and the focusing lens, at least a second deflector is provided between the focusing lens and the detection element, at least a third deflector is provided between the beam splitter and the detection element.

Abstract: A scanning charged particle beam device configured to image a specimen is described. The scanning charged particle beam device includes a source of charged particles, a condenser lens for influencing the charged particles, an aperture plate having at least two aperture openings to generate at least two primary beamlets of charged particles, at least two deflectors, wherein the at least two deflectors are multi-pole deflectors, a multi-pole deflector with an order of poles of 8 or higher, an objective lens, wherein the objective lens is a retarding field compound lens, a beam separator configured to separate the at least two primary beamlets from at least two signal beamlets, a beam bender, or a deflector or a mirror configured to deflect the at least two signal beamlets, wherein the beam bender is a hemispherical beam bender or beam bender having at least two curved electrodes, and at least two detector elements.

Abstract: A scanning charged particle beam device configured to image a specimen is described. The scanning charged particle beam device includes a source of charged particles, a condenser lens for influencing the charged particles, an aperture plate having at least two aperture openings to generate at least two primary beamlets of charged particles, at least two deflectors, wherein the at least two deflectors are multi-pole deflectors, a multi-pole deflector with an order of poles of 8 or higher, an objective lens, wherein the objective lens is a retarding field compound lens, a beam separator configured to separate the at least two primary beamlets from at least two signal beamlets, a beam bender, or a deflector or a mirror configured to deflect the at least two signal beamlets, wherein the beam bender is a hemispherical beam bender or beam bender having at least two curved electrodes, and at least two detector elements.

Abstract: A condenser lens arrangement for an electron beam system is described. The condenser lens arrangement includes a magnetic condenser lens adapted for generating a magnetic condenser lens field, the condenser lens having a symmetry axis, and a magnetic deflector adapted for generating a magnetic deflector field. The deflector is configured so that the superposition of the magnetic condenser lens field and the magnetic deflector field results in an optical axis of the condenser lens arrangement being movable relative to the symmetry axis. Further, an electron beam optical system including a condenser lens arrangement and a method for moving a condenser lens are described.

Abstract: A charged particle beam device is described. In one aspect, the charged particle beam device includes a charged particle beam source, and a switchable multi-aperture for generating two or more beam bundles from a charged particle beam which includes: two or more aperture openings, wherein each of the two or more aperture openings is provided for generating a corresponding beam bundle of the two or more beam bundles; a beam blanker arrangement configured for individually blanking the two or more beam bundles; and a stopping aperture for blocking beam bundles. The device further includes a control unit configured to control the individual blanking of the two or more beam bundles for switching of the switchable multi-aperture and an objective lens configured for focusing the two or more beam bundles on a specimen or wafer.

Abstract: An electron beam device 100 includes: a beam emitter 102 for emitting a primary electron beam 101; an objective electron lens 127 for focusing the primary electron beam 101 onto a specimen 130, the objective lens defining an optical axis 126; a beam tilting arrangement 103 configured to direct the primary electron beam 101 to the electron lens 127 at an adjustable offset from the optical axis 126 such that the objective electron lens 127 directs the electron beam 101 to strike the specimen 130 at an adjustable oblique beam landing angle, whereby a chromatic aberration is caused; a beam separator 115 having a first dispersion for separating a signal electron beam 135 from the primary electron beam 101; and a dispersion compensation element 104 adapted to adjust a compensation dispersion of the primary electron beam 101 so as to compensate for a beam aberration resulting from the first dispersion and from the chromatic aberration.

Abstract: A focused ion beam device is described comprising a gas field ion source with an analyzer for analyzing and classifying the structure of a specimen, a controller for controlling and/or modifying the structure of the specimen according to the analysis of the analyzer, an emitter tip, the emitter tip has a base tip comprising a first material and a supertip comprising a material different from the first material, wherein the supertip is a single atom tip and the base tip is a single crystal base tip. Furthermore, the focused ion beam device has a probe current control and a sample charge control. A method of operating a focused ion beam device is provided comprising applying a voltage between a single emission center of the supertip and an electrode, supplying gas to the emitter tip, analyzing and classifying the structure of a specimen, and controlling the structure of the specimen.

Abstract: An electron beam wafer imaging system is described. The system includes an emitter for emitting an electron beam; a power supply for applying a voltage between the emitter and the column housing of at least 20 kV; an objective lens for focusing the electron beam on a wafer, wherein the magnetic lens component and the electrostatic lens component substantially overlap each other, wherein the electrostatic lens component has a first electrode, a second electrode and a third electrode; and a control electrode positioned along an optical axis from the position of the third electrode to the position of a specimen stage, wherein the control electrode is configured for control of signal electrons; a controller to switch between a first operational mode and a second operational mode, wherein the controller is connected to a further power supply for switching between the first operational mode and the second operational mode.