Abstract: Native oxide growth on germanium, silicon germanium, and InGaAs undesirably affects CET (capacitive equivalent thickness) and EOT (effective oxide thickness) of high-k and low-k metal-oxide layers formed on these semiconductors. Even if pre-existing native oxide is initially removed from the bare semiconductor surface, some metal oxide layers are oxygen-permeable in thicknesses below about 25 ? thick. Oxygen-containing species used in the metal-oxide deposition process may diffuse through these permeable layers, react with the underlying semiconductor, and re-grow the native oxide. To eliminate or mitigate this re-growth, the substrate is exposed to a gas or plasma reductant (e.g., containing hydrogen). The reductant diffuses through the permeable layers to react with the re-grown native oxide, detaching the oxygen and leaving the un-oxidized semiconductor. The reduction product(s) resulting from the reaction may then be removed from the substrate (e.g., driven off by heat).

Abstract: Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A substrate heater can be mounted in the substrate support. A transport system moves the substrate support and is capable of positioning the substrate. The plasma system may be used to generate activated species. The activated species can be used to treat the surfaces of low-k and/or ultra low-k dielectric materials to facilitate improved deposition of diffusion barrier materials.

Abstract: Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A substrate heater can be mounted in the substrate support. A transport system moves the substrate support and is capable of positioning the substrate. The plasma system may be used to generate activated species. The activated species can be used to treat the surfaces of low-k and/or ultra low-k dielectric materials to facilitate improved deposition of diffusion barrier materials.

Abstract: Native oxide growth on germanium, silicon germanium, and InGaAs undesirably affects CET (capacitive equivalent thickness) and EOT (effective oxide thickness) of high-k and low-k metal-oxide layers formed on these semiconductors. Even if pre-existing native oxide is initially removed from the bare semiconductor surface, some metal oxide layers are oxygen-permeable in thicknesses below about 25 ? thick. Oxygen-containing species used in the metal-oxide deposition process may diffuse through these permeable layers, react with the underlying semiconductor, and re-grow the native oxide. To eliminate or mitigate this re-growth, the substrate is exposed to a gas or plasma reductant (e.g., containing hydrogen). The reductant diffuses through the permeable layers to react with the re-grown native oxide, detaching the oxygen and leaving the un-oxidized semiconductor. The reduction product(s) resulting from the reaction may then be removed from the substrate (e.g., driven off by heat).

Abstract: Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A substrate heater can be mounted in the substrate support. A transport system moves the substrate support and is capable of positioning the substrate. The plasma system may be used to generate activated hydrogen species. The activated hydrogen species can be used to etch/clean semiconductor oxide surfaces such as silicon oxide or germanium oxide.

Abstract: Oxides (e.g., native or thermal silicon oxide) are etched from underlying silicon with a mixture of fluorine and oxygen radicals generated by a remote plasma. The oxygen radicals rapidly oxidize any uncovered bare silicon areas, preventing the pitting that can result from fluorine etching bare silicon more rapidly than it etches the surrounding oxide. A very thin (few ?), highly uniform passivation layer remaining on the silicon after the process may be left in place or removed. An oxygen-impermeable layer may be formed in-situ immediately afterward to prevent further oxidation. A pre-treatment with oxygen radicals alone fills pores and gaps in the oxide before etching begins.

Abstract: A germanium-containing semiconductor surface is prepared for formation of a dielectric overlayer (e.g., a thin layer of high-k gate dielectric) by (1) removal of native oxide, for example by wet cleaning, (2) additional cleaning with hydrogen species, (3) in-situ formation of a controlled monolayer of GeO2, and (4) in-situ deposition of the dielectric overlayer to prevent uncontrolled regrowth of native oxide. The monolayer of GeO2 promotes uniform nucleation of the dielectric overlayer, but it too thin to appreciably impact the effective oxide thickness of the dielectric overlayer.

Abstract: Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A substrate heater can be mounted in the substrate support. A transport system moves the substrate support and is capable of positioning the substrate. The plasma system may be used to generate activated hydrogen species. The activated hydrogen species can be used to etch/clean semiconductor oxide surfaces such as silicon oxide or germanium oxide.

Abstract: Remote-plasma treatments of surfaces, for example in semiconductor manufacture, can be improved by preferentially exposing the surface to only a selected subset of the plasma species generated by the plasma source. The probability that a selected species reaches the surface, or that an unselected species is quenched or otherwise converted or diverted before reaching the surface, can be manipulated by introducing additional gases with selected properties either at the plasma source or in the process chamber, varying chamber pressure or flow rate to increase or decrease collisions, or changing the dimensions or geometry of the injection ports, conduits and other passages traversed by the species. Some example processes treat surfaces preferentially with relatively low-energy radicals, vary the concentration of radicals at the surface in real time, or clean and passivate in the same unit process.

Abstract: Semiconductor devices and methods of making thereof are disclosed. A field effect transistor (FET) is provided comprising a substrate, a first layer disposed above the substrate, the first layer being operable as a gate electrode, a second layer disposed above the first layer, the second layer comprising a dielectric material, a third layer disposed above the second layer, the third layer comprising a semiconductor, and a fourth layer comprising one or more conductive materials and operable as source and drain electrodes disposed above the third layer. In some embodiments, the dielectric material comprises a high-? dielectric. In some embodiments, the source and drain electrodes comprise one or more metals. The source and drain electrodes are each in ohmic contact with an area of the top surface of the third layer, and substantially all of the current through the transistor flows through the ohmic contacts.

Abstract: A germanium-containing semiconductor surface is prepared for formation of a dielectric overlayer (e.g., a thin layer of high-k gate dielectric) by (1) removal of native oxide, for example by wet cleaning, (2) additional cleaning with hydrogen species, (3) in-situ formation of a controlled monolayer of GeO2, and (4) in-situ deposition of the dielectric overlayer to prevent uncontrolled regrowth of native oxide. The monolayer of GeO2 promotes uniform nucleation of the dielectric overlayer, but it too thin to appreciably impact the effective oxide thickness of the dielectric overlayer.

Abstract: Embodiments provided herein describe methods and systems for processing substrates. A substrate processing tool includes a housing having a sidewall and a lid. The housing defines a processing chamber. A substrate support is configured to support a substrate within the processing chamber. A plasma generation source is coupled to the housing and in fluid communication with the processing chamber through the lid of the housing. The plasma generation source is configured to provide a plasma activated species into the processing chamber. A mask is positioned within the processing chamber to at least partially shield the substrate from the plasma activated species. The mask includes a plurality of openings configured such that when the mask is in first and second positions, the plasma activated species passes through a respective first and second of the plurality of openings and causes first and second regions on the substrate to be processed.

Abstract: An apparatus that includes a base, a sidewall extending from the base, and a lid disposed over a top of the sidewall is provided. A plasma generating source extends through a surface of the lid. A rotatable substrate support is disposed within the chamber above a surface of the base, the rotatable substrate support operable to vertically translate from the base to the lid. A first fluid inlet extends into a first surface of the sidewall and a second fluid inlet extends into a second surface of the sidewall. The plasma generating source provides a plasma activated species to a region of a surface of a substrate supported on the rotatable substrate support and a fluid delivered proximate to the region from one of the first or the second fluid inlet interacts with the plasma activated species to deposit a layer of material over the region.

Abstract: An electrical actuator comprises two or more electrical motors to drive a threaded screw ram. Each motor has an armature that drives a threaded roller screw that is engaged to the threaded screw ram. Each armature of each motor is independently engageable and/or dis-engageable with the ram. The motor armatures are engageable and disengageable by way of threaded roller screws, the ends of which are tapered to enable them to be lifted away from or lowered into engagement with the threaded ram.

Abstract: A thermal ink jet recording apparatus includes at least a substrate having at least a plurality of heating elements disposed in rows in at least two groups. Each group consists of two rows of heating elements, one row arranged on either side of the ink supply portion, each of the groups of the heating elements being associated with a single color ink. At least one nozzle plate has a plurality of nozzles disposed on the substrate where at least one nozzle plate and the substrate define a space between the nozzle plate and the substrate in registration with each group of heating elements and corresponding group of nozzles associated with a single color ink. Means are provided for independently delivering ink of one color from the ink reservoir to each of the spaces, whereby printing can be independently effected in at least two colors of ink.

Abstract: Subterranean formations at temperatures above 250.degree. F. are acidized by introducing a solution of a halogenated hydrocarbon and an organic solvent and allowing the halogenated hydrocarbon to hydrolyze in an aqueous medium to form a hydrohalic acid. Corrosion of metals, e.g., well casing, is inhibited by the presence of the solvent. The acidizing solution can be introduced as a liquid or as a mist in a substantially anhydrous gas. The aqueous medium can be naturally present in the formation or can be introduced into the formation as a liquid or as a foam simultaneously with the acidizing solution.

Abstract: The permeability of high-temperature subterranean hydrocarbon-producing reservoirs is increased by introducing therein a mixture containing a tertiary carboxylic acid alkylated amide, an aqueous solution of an acid or acids, and a water-soluble polymer, preferably a nitrogen-containing polymer.

Abstract: The permeability of subterranean hydrocarbon-producing reservoirs is increased by introducing therein a mixture containing a tertiary carboxylic acid alkylated amide and a glycol ether in combination with an aqueous solution of an acid and, optionally, including a water-soluble polymer, preferably a nitrogen-containing polymer.

Abstract: Subterranean reservoirs having temperatures above about 250.degree. F. are acidized by atomizing an acid precursor in an anhydrous gas to form a mist, mixing the mist with water in the borehole of a well penetrating the reservoir to form a treating fluid comprising a dispersion of fine particles of acid precursor and anhydrous gas in water, and injecting the treating fluid into the reservoir. The acid precursors are normally liquid halogenated hydrocarbons which hydrolyze in the presence of water to generate a hydrohalic acid.

Abstract: A method for treating a hot water-containing fluid stream passing through a conduit, under conditions of temperature and pressure whereupon at least a portion of the water flashes to steam, to inhibit the formation of scale deposited on the conduit and/or dissolve any such scale already formed, and to inhibit corrosion of the conduit wherein there is added to the fluid stream an effective amount of a solution of a water-soluble compound which provides a nitrogen-containing cation capable of flashing to become a gas at high temperatures selected from the group consisting of ammonium halides, ammonium salts of inorganic acids, ammonium salts of organic acids, ammonium salts of alpha hydroxy organic acids, quaternary ammonium halides, quaternary ammonium salts of inorganic acids, quaternary ammonium salts of organic acids, amine salts of inorganic acids, amine salts of organic acids and amides. Optionally the solution or dispersion also contains a water-soluble or dispersible polymer and/or a buffering agent.