Abstract: Semiconductor processing methods and apparatuses are provided. Some methods include providing a first wafer to a processing chamber, the first wafer having a thickness, a beveled edge, a first side, and a plurality of devices formed in a device area on the first side, the device area having an outer perimeter, depositing an annular ring of material on the first wafer, the annular ring of material covering a region of the beveled edge and the outer perimeter of the device area, and having an inner boundary closer to the center point of the first wafer than the outer perimeter, bonding a second substrate to the plurality of devices and to a portion of the annular ring of material, and thinning the thickness of the first wafer.

Abstract: A plasma-exclusion-zone ring for a substrate processing system includes a ring-shaped body with an upper portion and a base. The upper portion of the ring-shaped body defines an innermost radial surface and an uppermost surface. The base of the ring-shaped body defines: a radially outermost surface; a first bottom surface extending radially inward from the radially outermost surface; a second bottom surface extending radially inward from the first bottom surface; and a plasma-exclusion-zone ring notch i) extending radially inward from the radially outermost surface, ii) extending inward from a portion of the first bottom surface, and iii) recessed inward from the radially outermost surface and the first bottom surface. The first bottom surface extends at an acute angle from the second bottom surface.

Abstract: A pressure control system for a bevel edge etch chamber. The pressure control system includes a first sensor, a second sensor, at least one valve, and a controller. The first sensor is configured to detect a frontside pressure within the bevel edge etch chamber. The frontside pressure is indicative of a downforce on a substrate disposed on a substrate support within the bevel edge etch chamber. The second sensor is configured to detect a backside pressure on a backside of the substrate. The controller is configured to implement an etch process in the bevel edge etch chamber, and, based on the frontside pressure and the backside pressure, to control the at least one valve to maintain the frontside pressure at a pressure greater than the backside pressure at least one of during the etch process and for a period subsequent to the etch process.

Abstract: Semiconductor processing methods and apparatuses are provided. Some methods include providing a first wafer to a processing chamber, the first wafer having a thickness, a beveled edge, a first side, and a plurality of devices formed in a device area on the first side, the device area having an outer perimeter, depositing an annular ring of material on the first wafer, the annular ring of material covering a region of the beveled edge and the outer perimeter of the device area, and having an inner boundary closer to the center point of the first wafer than the outer perimeter, bonding a second substrate to the plurality of devices and to a portion of the annular ring of material, and thinning the thickness of the first wafer.

Abstract: A plasma-exclusion-zone ring for a substrate processing system that is configured to process a substrate includes a ring-shaped body, an upper portion of the ring-shaped body, a base and a plasma-exclusion-zone ring notch. The upper portion of the ring-shaped body defines a radially inner surface and a top surface. The base of the ring-shaped body defines a radially outer surface, a first bottom surface extending radially inward from the radially outer surface, and a second bottom surface extending radially inward from the first bottom surface. The plasma-exclusion-zone ring notch is proportional to an alignment notch of the substrate. The first bottom surface is tapered and extends at an acute angle from the second bottom surface to the radially outer surface. The first bottom surface is configured to extend over and oppose a periphery of the substrate.

Abstract: A pressure control system includes a first sensor, a second sensor, an evacuation valve and a controller. The first sensor is configured to detect a frontside pressure within a processing chamber. The frontside pressure is indicative of a downforce on a substrate disposed on a substrate support within the processing chamber. The second sensor is configured to detect a backside pressure on a backside of the substrate. The controller is configured to: control the evacuation valve to remove gas from and reduce the frontside pressure of the processing chamber; and during the removal of gas from a reduction in the frontside pressure of the processing chamber and based on the frontside pressure and the backside pressure, regulate an opening of the evacuation valve such that the frontside pressure does not drop below the backside pressure.

Abstract: Methods and systems for processing a bevel edge of a wafer in a bevel plasma chamber. The method includes receiving a pulsed mode setting for a RF generator of the bevel plasma chamber. The method includes identifying a duty cycle for the pulsed mode, the duty cycle defining an ON time and an OFF time during each cycle of power delivered by the generator. The method includes calculating or accessing a compensation factor to an input RF power setting of the generator. The compensation factor is configured to add an incremental amount of power to the input power setting to account for a loss in power attributed to the duty cycle to be run in the pulsed mode. The method is configured to run the generator in the pulse mode with the duty cycle and the pulsing frequency.

Abstract: A substrate processing system for processing a substrate includes an upper plasma exclusion zone ring arranged above a substrate during plasma treatment of a bevel edge of the substrate. An upper electrode is arranged above the substrate during plasma treatment. A lower plasma exclusion zone ring is at least partially arranged below the substrate during the plasma treatment. A lower electrode is at least partially arranged below the substrate during plasma treatment. The lower plasma exclusion zone ring includes an annular body with a lower portion at least partially arranged below the substrate and an upwardly projecting flange extending upwardly from the lower portion of the annular body at a location spaced from a radially outer edge of the substrate. The upwardly projecting flange includes an uppermost surface extending to one of a middle portion of the substrate in a vertical direction and above the middle portion of the substrate.

Abstract: The present disclosure discloses a sink with an assembled stand. The sink includes a sink main body and an assembled stand; the assembled stand includes a left stand, a right stand, a connector and a surrounding panel; the connector connects the left stand with the right stand; the surrounding panel is mounted between the left stand and the right stand; the sink main body is movably mounted on the assembled stand; and the surrounding panel covers side surfaces of the sink main body. The present disclosure has the beneficial effects: The sink can flexibly meet requirements of a user for usage scenarios by a structural design of a sink supporting main body. Furthermore, a DIY product is provided to reduce the transportation cost, and the user can assemble the sink easily on the own.

Abstract: A substrate processing system for processing a substrate includes an upper plasma exclusion zone ring arranged above a substrate during plasma treatment of a bevel edge of the substrate. An upper electrode is arranged above the substrate during plasma treatment. A lower plasma exclusion zone ring is at least partially arranged below the substrate during the plasma treatment. A lower electrode is at least partially arranged below the substrate during plasma treatment. The lower plasma exclusion zone ring includes an annular body with a lower portion at least partially arranged below the substrate and an upwardly projecting flange extending upwardly from the lower portion of the annular body at a location spaced from a radially outer edge of the substrate. The upwardly projecting flange includes an uppermost surface extending to one of a middle portion of the substrate in a vertical direction and above the middle portion of the substrate.

Abstract: A shower rod assembly comprising a first arm engaged at a proximal end to a first swivel bracket assembly which includes a mounting bracket and a swivel bracket hingedly engaged to the mounting bracket, a second arm engaged to a second swivel bracket assembly which includes a mounting bracket and a swivel bracket hingedly engaged to the mounting bracket, a first attachment end engaged to a distal end of the first arm, first attachment end including a pin sleeve accessible from an outer surface, a second attachment end springingly engaged to a distal end of the second arm, the second attachment end including a coil spring mounted within a spring chamber engaged to the distal end of the second arm, and a pin emanating from an outer surface of the second attachment end where the pin springingly engages the pin sleeve to form a continuous shower rod.

Abstract: A system for determining a thickness of a substrate arranged in a processing chamber includes an emitter configured to transmit a signal toward a gap between the substrate and a component of the processing chamber arranged above the substrate, a receiver configured to receive at least a portion of the transmitted signal and generate a measurement signal based on a characteristic of the received portion of the signal, and a system controller configured to receive the measurement signal and selectively adjust a parameter of the processing chamber based on a relationship between values of the measurement signal and at least one of the thickness of the substrate, a width of the gap between the substrate and the component of the processing chamber, and an amount to adjust the parameter of the processing chamber.

Abstract: A system for determining a thickness of a substrate arranged in a processing chamber includes an emitter configured to transmit a signal toward a gap between the substrate and a component of the processing chamber arranged above the substrate, a receiver configured to receive at least a portion of the transmitted signal and generate a measurement signal based on a characteristic of the received portion of the signal, and a system controller configured to receive the measurement signal and selectively adjust a parameter of the processing chamber based on a relationship between values of the measurement signal and at least one of the thickness of the substrate, a width of the gap between the substrate and the component of the processing chamber, and an amount to adjust the parameter of the processing chamber.

Abstract: Provided is a sink with an embedded shower head. The sink includes a sink main body and a water outlet device, wherein the water outlet device includes a shower head assembly and a switch assembly which are matched with each other. The shower head assembly includes a shower head, a cover plate and a connecting piece. A plurality of water outlet holes are uniformly formed in a surface of the shower head. The cover plate includes a water outlet, the water outlet and the switch assembly are connected through the connecting piece, and the cover plate is closed and installed on the back of the shower head.

Abstract: Genetic circuits that control transgene expression in response to pre-defined transcriptional cues would enable the development of smart therapeutics. The present disclosure relates to engineered programmable single-transcript RNA sensors in which adenosine deaminases acting on RNA (ADARs) autocatalytically convert trigger hybridization into a translational output. This system amplifies the signal from editing by endogenous ADAR through a positive feedback loop. Amplification is mediated by the expression of a hyperactive, minimal ADAR variant and its recruitment to the edit site via an orthogonal RNA targeting mechanism. This topology confers high dynamic range, low background, minimal off-target effects, and a small genetic footprint. The circuits and systems disclosed herein leverage an ability to detect single nucleotide polymorphisms and modulate translation in response to endogenous transcript levels in mammalian cells.

Abstract: A shower rod assembly comprising a first arm engaged at a proximal end to a first swivel bracket assembly which includes a mounting bracket and a swivel bracket hingedly engaged to the mounting bracket, a second arm engaged to a second swivel bracket assembly which includes a mounting bracket and a swivel bracket hingedly engaged to the mounting bracket, a first attachment end engaged to a distal end of the first arm, first attachment end including a pin sleeve accessible from an outer surface, a second attachment end springingly engaged to a distal end of the second arm, the second attachment end including a coil spring mounted within a spring chamber engaged to the distal end of the second arm, and a pin emanating from an outer surface of the second attachment end where the pin springingly engages the pin sleeve to form a continuous shower rod.