Patents by Inventor Jack L. Jewell
Jack L. Jewell has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20160246015Abstract: The invention addresses the coupling of light between one or more multicore fibers and optoelectronic transducers, such as lasers or photodetectors, and/or single core fibers. More specifically, the invention utilizes a single microlens element to couple multiple optical data signals between multiple optoelectronic transducers and multiple cores of a multiple-core fiber (MCF), or to couple signals from multiple single-core fibers to multiple cores of a MCF. At least one optoelectronic transducer and at least one fiber core are substantially removed from the microlens axis and the MCF axis, possibly by different amounts, and cores of the MCF may optionally be polished to be non-telecentric to the axis of the microlens element.Type: ApplicationFiled: May 15, 2014Publication date: August 25, 2016Applicant: CommScope, Inc. of North CarolinaInventors: Richard L. CASE, Jack L. JEWELL
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Patent number: 7802930Abstract: A device comprising: an optical subassembly has a lens rear surface including one or more facets for scattering at least some of the light transmitted through the lens rear surface.Type: GrantFiled: March 4, 2008Date of Patent: September 28, 2010Assignee: JDS Uniphase CorporationInventors: Jack L. Jewell, Luke A. Graham
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Patent number: 7796850Abstract: Optical systems comprise one or more optical pathways including lenses that are offset with respect to each other and lenses that are offset with respect to optical fibers.Type: GrantFiled: June 11, 2008Date of Patent: September 14, 2010Assignee: JDS Uniphase CorporationInventors: Jack L. Jewell, Luke A. Graham
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Publication number: 20090310915Abstract: Optical systems comprise one or more optical pathways including lenses that are offset with respect to each other and lenses that are offset with respect to optical fibers.Type: ApplicationFiled: June 11, 2008Publication date: December 17, 2009Applicant: JDS Uniphase CorporationInventors: Jack L. Jewell, Luke A. Graham
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Patent number: 7627014Abstract: Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques, taken separately or in combination, suffice to permit operation of light emitting devices at wavelengths of 1.3 ?m or greater of light-emitting electro-optic devices. These methods or techniques, by example, include: (1) utilizing new superlattice structures having high In concentrations in the active region, (2) utilizing strain compensation to increase the usable layer thickness for quantum wells with appropriately high In concentrations, (3) utilizing appropriately small amounts of nitrogen (N) in the pseudomorphic InGaAsN/GaAs laser structure, and (4) use of nominal (111) oriented substrates to increase the usable layer thickness for quantum wells with appropriately high In concentrations.Type: GrantFiled: March 28, 2005Date of Patent: December 1, 2009Assignee: JDS Uniphase CorporationInventors: Jack L. Jewell, Henryk Temkin
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Publication number: 20090252192Abstract: A device including a laser with reduced feedback.Type: ApplicationFiled: April 8, 2008Publication date: October 8, 2009Applicant: JDS Uniphase CorporationInventors: Jack L. Jewell, Luke A. Graham
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Publication number: 20090226133Abstract: A device comprising: an optical subassembly has a lens rear surface including one or more facets for scattering at least some of the light transmitted through the lens rear surface.Type: ApplicationFiled: March 4, 2008Publication date: September 10, 2009Applicant: JDS Uniphase CorporationInventors: Jack L. Jewell, Luke A. Graham
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Patent number: 7542493Abstract: A novel approach for providing temperature compensation for semiconductor lasers is disclosed. This approach utilizes reflectivity characteristics in the at least one of the mirrors of the semiconductor laser to provide temperature compensation to the device.Type: GrantFiled: February 1, 2005Date of Patent: June 2, 2009Assignee: JDS Uniphase CorporationInventor: Jack L. Jewell
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Patent number: 7330494Abstract: A conductive element with a lateral oxidation barrier is provided for the control of lateral oxidation processes in semiconductor devices such as lasers, vertical cavity surface emitting lasers and light emitting diodes. The oxidation barrier is formed through modification of one or more layers which initially were receptive to oxidation. The quality of material directly below the oxidation barrier may be preserved. Related applications include the formation of vertical cavity surface emitting lasers on non-GaAs substrates and on GaAs substrates.Type: GrantFiled: April 25, 2000Date of Patent: February 12, 2008Assignee: JDS Uniphase CorporationInventor: Jack L. Jewell
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Patent number: 7215692Abstract: A conductive element with a lateral oxidation barrier is provided for the control of lateral oxidation processes in semiconductor devices such as lasers, vertical cavity surface emitting lasers and light emitting diodes. The oxidation barrier is formed through modification of one or more layers which initially were receptive to oxidation. The quality of material directly below the oxidation barrier may be preserved. Related applications include the formation of vertical cavity surface emitting lasers on non-GaAs substrates and on GaAs substrates.Type: GrantFiled: March 26, 2002Date of Patent: May 8, 2007Assignee: Picolight IncorporatedInventor: Jack L. Jewell
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Patent number: 6980579Abstract: A novel approach for providing temperature compensation for semiconductor lasers is disclosed. This approach utilizes reflectivity characteristics in the at least one of the mirrors of the semiconductor laser to provide temperature compensation to the device.Type: GrantFiled: March 3, 2003Date of Patent: December 27, 2005Assignee: Picolight IncorporatedInventor: Jack L. Jewell
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Patent number: 6931181Abstract: A novel electro-opto-mechanical assembly is provided. The electro-opto-mechanical assembly comprising: a first wafer, the wafer having a top and bottom surface; at least one optical element disposed on one surface of the first wafer; at least one discrete opto-electronic transducer element disposed on the bottom surface of the first wafer and in optical communication with the optical element; and an optical waveguide; wherein the first wafer and the optical element form an optical relay which relays light between the discrete opto-electronic transducer and the optical waveguide and thereby forms an efficient optical coupling between the discrete opto-electronic transducer and the optical waveguide.Type: GrantFiled: April 5, 2004Date of Patent: August 16, 2005Assignee: Picolight IncorporatedInventors: Jack L. Jewell, Stanley Swirhun, Mikhail Kaluzhny, Andrew Moore
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Patent number: 6920165Abstract: Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques, taken separately or in combination, suffice to permit operation of light emitting devices at wavelengths of 1.3 ?m or greater of light-emitting electro-optic devices. These methods or techniques, by example, include: (1) utilizing new superlattice structures having high In concentrations in the active region, (2) utilizing strain compensation to increase the usable layer thickness for quantum wells with appropriately high In concentrations, (3) utilizing appropriately small amounts of nitrogen (N) in the pseudomorphic InGaAsN/GaAs laser structure, and (4) use of nominal (111) oriented substrates to increase the usable layer thickness for quantum wells with appropriately high In concentrations.Type: GrantFiled: February 26, 2003Date of Patent: July 19, 2005Assignee: Picolight IncorporatedInventors: Jack L. Jewell, Henryk Temkin
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Publication number: 20040184707Abstract: A novel electro-opto-mechanical assembly is provided. The electro-opto-mechanical assembly comprising: a first wafer, the wafer having a top and bottom surface; at least one optical element disposed on one surface of the first wafer; at least one discrete opto-electronic transducer element disposed on the bottom surface of the first wafer and in optical communication with the optical element; and an optical waveguide; wherein the first wafer and the optical element form an optical relay which relays light between the discrete opto-electronic transducer and the optical waveguide and thereby forms an efficient optical coupling between the discrete opto-electronic transducer and the optical waveguide.Type: ApplicationFiled: April 5, 2004Publication date: September 23, 2004Inventors: Jack L. Jewell, Stanley Swirhun, Mikhail Kaluzhny, Andrew Moore
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Patent number: 6765943Abstract: A conductive element with a lateral oxidation barrier is provided for the control of lateral oxidation processes in semiconductor devices such as lasers, vertical cavity surface emitting lasers and light emitting diodes. The oxidation barrier is formed through modification of one or more layers which initially were receptive to oxidation. The quality of material directly below the oxidation barrier may be preserved.Type: GrantFiled: August 7, 2002Date of Patent: July 20, 2004Assignee: Picolight, IncorporatedInventor: Jack L. Jewell
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Patent number: 6741777Abstract: A novel electro-opto-mechanical assembly is provided. The electro-opto-mechanical assembly comprising: a first wafer, the wafer having a top and bottom surface; at least one optical element disposed on one surface of the first wafer; at least one discrete opto-electronic transducer element disposed on the bottom surface of the first wafer and in optical communication with the optical element; and an optical waveguide; wherein the first wafer and the optical element form an optical relay which relays light between the discrete opto-electronic transducer and the optical waveguide and thereby forms an efficient optical coupling between the discrete opto-electronic transducer and the optical waveguide.Type: GrantFiled: January 27, 2003Date of Patent: May 25, 2004Assignee: Picolight, IncorporatedInventors: Jack L. Jewell, Stanley Swirhun, Mikhail Kaluzhny, Andrew Moore
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Publication number: 20040062284Abstract: A conductive element with a lateral oxidation barrier is provided for the control of lateral oxidation processes in semiconductor devices such as lasers, vertical cavity surface emitting lasers and light emitting diodes. The oxidation barrier is formed through modification of one or more layers which initially were receptive to oxidation. The quality of material directly below the oxidation barrier may be preserved. Related applications include the formation of vertical cavity surface emitting lasers on non-GaAs substrates and on GaAs substrates.Type: ApplicationFiled: September 15, 2003Publication date: April 1, 2004Inventor: Jack L. Jewell
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Publication number: 20040017835Abstract: Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques, taken separately or in combination, suffice to permit operation of light emitting devices at wavelengths of 1.3 &mgr;m or greater of light-emitting electro-optic devices. These methods or techniques, by example, include: (1) utilizing new superlattice structures having high In concentrations in the active region, (2) utilizing strain compensation to increase the usable layer thickness for quantum wells with appropriately high In concentrations, (3) utilizing appropriately small amounts of nitrogen (N) in the pseudomorphic InGaAsN/GaAs laser structure, and (4): sue of nominal (111) oriented substrates to increase the usable layer thickness for quantum wells with appropriately high In concentrations.Type: ApplicationFiled: February 26, 2003Publication date: January 29, 2004Inventors: Jack L. Jewell, Henryk Temkin
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Publication number: 20030165171Abstract: A novel approach for providing temperature compensation for semiconductor lasers is disclosed. This approach utilizes reflectivity characteristics in the at least one of the mirrors of the semiconductor laser to provide temperature compensation to the device.Type: ApplicationFiled: March 3, 2003Publication date: September 4, 2003Inventor: Jack L. Jewell
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Publication number: 20030142914Abstract: A novel electro-opto-mechanical assembly is provided. The electro-opto-mechanical assembly comprising: a first wafer, the wafer having a top and bottom surface; at least one optical element disposed on one surface of the first wafer; at least one discrete opto-electronic transducer element disposed on the bottom surface of the first wafer and in optical communication with the optical element; and an optical waveguide; wherein the first wafer and the optical element form an optical relay which relays light between the discrete opto-electronic transducer and the optical waveguide and thereby forms an efficient optical coupling between the discrete opto-electronic transducer and the optical waveguide.Type: ApplicationFiled: January 27, 2003Publication date: July 31, 2003Inventors: Jack L. Jewell, Stanley Swirhun, Mikhail Kaluzhny, Andrew Moore