Abstract: An improved semiconductor structure is provided. The semiconductor structure comprises a first layer, the first layer having a restricted growth surface having a region with a transverse dimension D, the first layer having a first lattice constant L.sub.1 ; a first, last and at least one intermediate transition layers, the transition layers forming a transition region, the transition region disposed above the first layer, the transition region having a vertical thickness T, and where at least one of the transition layers has lattice constants between L.sub.1 and a second lattice constant L.sub.2 where the first transition layer has a lattice constant closer to the L.sub.1 than L.sub.2 and the last transition layer has a lattice constant closer to the L.sub.2 than L.sub.1 ; and a second layer disposed on the transition region, the second layer having the second lattice constant L.sub.2 ; wherein: the transition region has an average fractional change in lattice constant characterized by .kappa. where .kappa.

Abstract: Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques, taken separately or in combination, suffice to permit operation of light emitting devices at wavelengths of 1.3 .mu.m or greater of light-emitting electro-optic devices. These methods or techniques, by example, include: (1) utilizing new superlattice structures having high In concentrations in the active region, (2) utilizing strain compensation to increase the usable layer thickness for quantum wells with appropriately high In concentrations, (3) utilizing appropriately small amounts of nitrogen (N) in the pseudomorphic InGaAsN/GaAs laser structure, and (4) use of nominal (111) oriented substrates to increase the usable layer thickness for quantum wells with appropriately high In concentrations.

Abstract: An improved lens structure is provided which reduces the scattering and/or reflection losses in an optical cavity. The lens comprising at least a first, second and third lens layer arranged vertically, the first and third lens layers being oxidized in first and third oxidized regions adjacent to first and third non-oxidized regions, the second layer disposed between the first and third layers and comprising a non-oxidized semiconductor material, the first and third non-oxidized regions comprising a semiconductor material, each of the oxidized regions having an aluminum contents greater than 20%; and appropriately spacing the first lens layer from the third lens layer to reduce the scattering and/or reflection losses in an optical cavity.

Abstract: An optical memory system employing multiple reading/writing optical beams from solid state lasers for simultaneously reading from a writing to multiple tracks of optical media to allow reading/writing of closely spaced adjacent tracks, a number a feature are disclosed. These include using vertical writing surface emitting lasers forming an array of beam sources, using lenslets associated with array, modulating the beams, and providing various optical elements and combinations of optical elements to compensate for beam and system imperfections.

Abstract: An improved light emitting device is provided.

Abstract: An improved aperture is provided. The aperture comprises: at least a first layer; the first layer being oxidized in a laterally oriented first region; the first layer being modified within a laterally oriented second region, the second region being oxidized less than the first region; a second layer disposed in communication with the first layer, the second layer being oxidized less than the first layer; and a non-planar boundary having top and bottom boundary surfaces and side walls connecting the top and bottom boundary surfaces, the top boundary surface defined as a top surface of the second layer above the laterally oriented first region and the bottom boundary surface defined as a bottom surface of the laterally oriented second region, the first and second regions defining the aperture.

Abstract: A conductive element with a lateral oxidation barrier is provided for the control of lateral oxidation processes in semiconductor devices such as lasers, vertical cavity surface emitting lasers and light emitting diodes. The oxidation barrier is formed through modification of one or more layers which initially were receptive to oxidation. The quality of material directly below the oxidation barrier may be preserved. Related applications include the formation of vertical cavity surface emitting lasers on non-GaAs substrates and on GaAs substrates.

Abstract: Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques, taken separately or in combination, suffice to permit operation of light emitting devices at wavelengths of 1.3 .mu.m or greater of light-emitting electro-optic devices. These methods or techniques, by example, include: (1) utilizing new superlattice structures having high In concentrations in the active region, (2) utilizing strain compensation to increase the usable layer thickness for quantum wells with appropriately high In concentrations, (3) utilizing appropriately small amounts of nitrogen (N) in the pseudomorphic InGaAsN/GaAs laser structure, and (4) sue of nominal (111) oriented substrates to increase the usable layer thickness for quantum wells with appropriately high In concentrations.

Abstract: Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques, taken separately or in combination, suffice to permit operation of light emitting devices at wavelengths of 1.3 .mu.m or greater of light-emitting electro-optic devices. These methods or techniques, by example, include: (1) utilizing new superlattice structures having high In concentrations in the active region, (2) utilizing strain compensation to increase the usable layer thickness for quantum wells with appropriately high In concentrations, (3) utilizing appropriately small amounts of nitrogen (N) in the pseudomorphic InGaAsN/GaAs laser structure, and (4) sue of nominal (111) oriented substrates to increase the usable layer thickness for quantum wells with appropriately high In concentrations.

Abstract: A vertical-cavity surface-emitting laser is disclosed comprising a laser cavity sandwiched between two distributed Bragg reflectors. The laser cavity comprises a pair of spacer layers surrounding one or more active, optically emitting quantum-well layers having a bandgap in the visible which serve as the active optically emitting material of the device. The thickness of the laser cavity is m .lambda./2n.sub.eff where m is an integer, .lambda. is the free-space wavelength of the laser radiation and n.sub.eff is the effective index of refraction of the cavity. Electrical pumping of the laser is achieved by heavily doping the bottom mirror and substrate to one conductivity-type and heavily doping regions of the upper mirror with the opposite conductivity type to form a diode structure and applying a suitable voltage to the diode structure. For radiation in the yellow to green portion of the spectrum, the laser includes an active layer of GaP or AlGaP quantum wells and AlP/AlGaP mirrors.

Abstract: A monolithically integrated optoelectronic device is provided which integrates a vertical cavity surface emitting laser and either a photosensitive or an electrosensitive device either as input or output to the vertical cavity surface emitting laser either in parallel or series connection. Both vertical and side-by-side arrangements are disclosed, and optical and electronic feedback means are provided. Arrays of these devices can be configured to enable optical computing and neural network applications.

Abstract: A quantum cavity light emitting element is provided, comprising first and second mirrors to form a first cavity, at least first and second reflecting surfaces to form a second cavity oriented perpendicularly to the first, and a light emitting material within both cavities. The thickness of the first cavity is designed to enhance emission of light from the light emitting material along the axis of the first cavity, while the second cavity has a predetermined thickness which suppresses emission of light from the light emitting material.

Abstract: An on-airway breath-by-breath oxygen sensor is described which has the necessary low weight, fast response and high precision required for oxygen consumption measurement. A vertical-cavity surface-emitting laser (VCSEL) is continuously tuned to emit light at the resonance of oxygen, or more generally, the molecular species of interest. The light beam is directed through a sample containing the molecular species of interest onto a detector. The amount of light absorbed is approximately proportional to the concentration of the molecular species of interest in the sample.

Abstract: A solid-state scanner for reading bar codes or projecting images is described. The scanner operates either in a reading mode or a calibrate mode using the same hardware. Use of two-dimensional array light sources minimizes the size of the semiconductor chips containing the light source arrays is provided. Use of oversampling or anamorphic optical systems increase tolerances to angular misorientations is also discussed. Used in conjunction with a mechanical scanning device, the scanner is capable of reading two-dimensional bar codes or generating two-dimensional images.

Abstract: An optical memory system employing multiple reading/writing optical beams for simultaneously reading from or writing to multiple tracks of optical media to allow reading/writing of closely spaced adjacent tracks. Various optical elements and other means are incorporated to enable the beams as a group to remain focused and properly tracking as the beams as a group scan across the tracks. Means are also provided for modulating the beams to reduce crosstalk. Various optical elements and combinations of optical elements are provided to compensate for beam and system imperfections.

Abstract: The present invention is directed to an optical system which includes an image region having at least one light source which directs a beam of light along an optical axis and an object region which is adapted to receive the light from the light source. An optical delivery system is between the image region and object region. The optical delivery system receives the light from the image region and directs it to the object region. The optical delivery system is formed of a plurality of optical elements, such as lenses and volume holograms. The optical delivery system is designed to either receive a plurality of beams of light from a plurality of sources or different modes of a single light source and form a single spot of light in the image region having the combined power of all of the beams of light or modes of a single beam. The optical delivery system can also condense or expand the spacing between the beams of light from a plurality of light sources.

Abstract: A package and method for packaging optoelectronic or electronic components is provided in which multiple chip regions are packaged simultaneously prior to sectioning of the wafer into chips. The method and package allows micro-optic and other package elements to be integrated onto wafers on the same face as the optoelectronic or electronic devices without inhibiting the ability to make electrical contact to the devices. The package elements may be integrated to the wafer by material deposition, by spinning, or by physical mounting.

Abstract: An optical memory system employing multiple reading/writing optical beams from solid state lasers for simultaneously reading from a writing to multiple tracks of optical media to allow reading/writing of closely spaced adjacent tracks, a number a feature are disclosed. These include using vertical writing surface emitting lasers forming an array of beam sources, using lenslets associated with array, modulating the beams, and providing various optical elements and combinations of optical elements to compensate for beam and system imperfections.

Abstract: A phased array of semiconductor laser elements is provided in which the percentage of light which propagates into different diffractive orders is modified by an optical element. The diode laser includes a body of a semiconductor material having an active region therein which is adapted to generate radiation and emit the radiation form a surface of the body, and separate reflecting mirrors at opposite sides of the active region with at least one of the mirrors being partially transparent to the generated light to allow the light generated in the active region to be emitted therethrough. The optical element may take the form of a modification in the arrangement of the semiconductor laser elements, or an array of microprisms, or an external mirror to modify the percentage of light which propagates into different diffractive orders.

Abstract: A vertical-cavity, surface-emitting semiconductor diode laser having a monolithic and planar surface and having lateral anisotropy in order to control the polarization of the emitted beam of light. The diode laser includes a body of a semiconductor material having an active region therein which is adapted to generate radiation and emit the radiation from a surface of the body, and a separate reflecting mirror at opposite sides of the active region with at least one of the mirrors being partially transparent to the generated light to allow the light generated in the active region to be emitted therethrough. The anisotropy may be provided by utilizing anisotropy in the atomic or molecular structure of the materials forming the laser, or by anisotropic patterning or deliberate offset alignment in processing of the laser or through anisotropic structures in the laser cavity to control the polarization of the emitted beam.