Abstract: A method includes: providing a cell of a first group that supplies a first potential from a backside of a substrate, multiple cells of a second group, and two cells of a third group that supply a second potential from the backside; determining a distance in a row direction between the cell of the first group and each of the two cells of the third group; determining a placement of the cell of the first group, the two cells of the third group, and each of the cells of the second group; and counting a number of pins of the cells of the second group. The cell of the first group is located between the two cells of the third group. Each of the cells of the second group is located between the two cells of the third group.

Abstract: An IC device includes a first interconnect structure configured to distribute a power supply voltage, a second interconnect structure configured to distribute a reference voltage, a third interconnect structure configured to distribute a first power gating signal, and a plurality of logic circuits. Each logic circuit of the plurality of logic circuits includes a power switch coupled in series with a logic gate between the first and second interconnect structures, and the power switch includes a control terminal coupled to the third interconnect structure.

Abstract: One aspect of this description relates to an integrated circuit (IC) structure including a first layer and a second layer. The first layer includes a first metal structure coupled to a first power supply having a first voltage level and a second metal structure coupled to a second power supply having a second voltage level different from the first voltage level. The second layer is formed over the first layer. The second layer includes a first nano-sheet device coupled to the first metal structure and a second nano-sheet device adjacent to the first nano-sheet device. The second nano-sheet device is coupled to the second metal structure. A distance between the first nano-sheet device and the second nano-sheet device is less than a minimum n-well to n-well spacing.

Abstract: In some embodiments, a semiconductor device is provided. The semiconductor device includes a semiconductor substrate having a first semiconductor material layer separated from a second semiconductor material layer by an insulating layer. A first access transistor is arranged on the first semiconductor material layer, where the first access transistor has a pair of first source/drain regions having a first doping type. A second access transistor is arranged on the first semiconductor material layer, where the second access transistor has a pair of second source/drain regions having a second doping type opposite the first doping type. A resistive memory cell having a bottom electrode and an upper electrode is disposed over the semiconductor substrate, where one of the first source/drain regions and one of the second source/drain regions are electrically coupled to the bottom electrode.

Abstract: A helmet comprising first and second parts and a connector connecting the first and second parts of the helmet, the connector comprising: a first plate; a first anchor point on one side of the first plate, configured to be connected to the first part; a second plate located on an opposite side of the first plate from the first anchor point; a second anchor point on an opposite side of the second plate from the first plate, configured to be connected to the second part; a low friction interface provided between opposing surfaces of the first and second plates; and a cuff of deformable material provided around the first and second plates, and configured to at least partially cover the side of the first plate on which the first anchor point is located and to at least partially cover the side of the second plate on which the second anchor point is located.

Abstract: Disclosed embodiments herein relate to an integrated circuit including power switches with active regions connected to form a contiguous region. In one aspect, the integrated circuit includes a first layer including a first metal rail extending in a first direction. In one aspect, the integrated circuit includes a second layer above the first layer along a second direction perpendicular to the first direction. The second layer may include active regions for power switches. In one aspect, the active regions of the power switches are connected to form a contiguous region extending in the first direction. The first metal rail may be electrically coupled to the active regions through via contacts. In one aspect, the integrated circuit includes a third layer above the second layer along the second direction. The third layer may include a second metal rail electrically coupled to some of the power switches through additional via contacts.

Abstract: Disclosed embodiments herein relate to an integrated circuit including power switches with active regions connected to form a contiguous region. In one aspect, the integrated circuit includes a first layer including a first metal rail extending in a first direction. In one aspect, the integrated circuit includes a second layer above the first layer along a second direction perpendicular to the first direction. The second layer may include active regions for power switches. In one aspect, the active regions of the power switches are connected to form a contiguous region extending in the first direction. The first metal rail may be electrically coupled to the active regions through via contacts. In one aspect, the integrated circuit includes a third layer above the second layer along the second direction. The third layer may include a second metal rail electrically coupled to some of the power switches through additional via contacts.

Abstract: One aspect of this description relates to an integrated circuit (IC) structure including a first layer and a second layer. The first layer includes a first metal structure coupled to a first power supply having a first voltage level and a second metal structure coupled to a second power supply having a second voltage level different from the first voltage level. The second layer is formed over the first layer. The second layer includes a first nano-sheet device coupled to the first metal structure and a second nano-sheet device adjacent to the first nano-sheet device. The second nano-sheet device is coupled to the second metal structure. A distance between the first nano-sheet device and the second nano-sheet device is less than a minimum n-well to n-well spacing.

Abstract: In some embodiments, a semiconductor device is provided. The semiconductor device includes a semiconductor substrate having a first semiconductor material layer separated from a second semiconductor material layer by an insulating layer. A source region and a drain region are disposed in the first semiconductor material layer and spaced apart. A gate electrode is disposed over the first semiconductor material layer between the source region and the drain region. A first doped region having a first doping type is disposed in the second semiconductor material layer, where the gate electrode directly overlies the first doped region. A second doped region having a second doping type different than the first doping type is disposed in the second semiconductor material layer, where the second doped region extends beneath the first doped region and contacts opposing sides of the first doped region.

Abstract: A hardware accelerator can store, in multiple memory storage areas in one or more memories on the accelerator, input data for each processing time step of multiple processing time steps for processing sequential inputs to a machine learning model. For each processing time step, the following is performed. The accelerator can access a current value of a counter stored in a register within the accelerator to identify the processing time step. The accelerator can determine, based on the current value of the counter, one or more memory storage areas that store the input data for the processing time step. The accelerator can facilitate access of the input data for the processing time step from the one or more memory storage areas to at least one processor coupled to the one or more memory storage areas. The accelerator can increment the current value of the counter stored in the register.

Abstract: A semiconductor device includes a substrate, a dielectric region, a first fin structure, a second fin structure, a plurality of conductive regions, a first conductive rail and a conductive structure. The dielectric region is situated on the substrate. The first fin structure protrudes from the substrate and the dielectric region. The second fin structure protrudes from the substrate and the dielectric region, and extends parallel to the first fin structure. The conductive regions are situated on the dielectric region. The first conductive rail is situated within the dielectric region, and electrically connected to a first conductive region of the plurality of conductive regions. Opposite sides of the first conductive rail face the first fin structure and the second fin structure, respectively. The conductive structure penetrates through the substrate and formed under the first conductive rail, and is electrically connected to the first conductive rail.

Abstract: An integrated circuit includes first through fourth devices positioned over one or more substrates, a first radio frequency interconnect (RFI) including a first transmitter included in the first device, a first receiver included in the second device, and a first guided transmission medium coupled to each of the first transmitter and the first receiver, a second RFI including a second transmitter included in the first device, a second receiver included in the third device, and a second guided transmission medium coupled to each of the second transmitter and the second receiver, and a third RFI including a third transmitter included in the first device, a third receiver included in the fourth device, and the second guided transmission medium coupled to each of the third transmitter and the third receiver.

Abstract: A hardware accelerator can store, in multiple memory storage areas in one or more memories on the accelerator, input data for each processing time step of multiple processing time steps for processing sequential inputs to a machine learning model. For each processing time step, the following is performed. The accelerator can access a current value of a counter stored in a register within the accelerator to identify the processing time step. The accelerator can determine, based on the current value of the counter, one or more memory storage areas that store the input data for the processing time step. The accelerator can facilitate access of the input data for the processing time step from the one or more memory storage areas to at least one processor coupled to the one or more memory storage areas. The accelerator can increment the current value of the counter stored in the register.

Abstract: This disclosure describes a system and method for compiling and executing machine learning inferences in an array of multi-core computing devices. Each multi-core computing device can be an application specific integrated circuit (ASIC) or group of ASICS. In many applications, the array of computing devices changes from inference to inference, and can be adjusted based on the requirements of the inference. Additionally, each ASIC can have multiple processing cores, and multiple types of processing cores. Therefore, performing optimizations and scheduling at compile time, can dramatically increase the efficiency of the array in executing the inference. In some implementations, it is possible to select an amount of time or effort to be spent optimizing during compiling, giving the user flexibility in determining whether to spend time during compilation or during execution.

Abstract: A semiconductor device includes a substrate, a dielectric region, a first fin structure, a second fin structure, a plurality of conductive regions, a first conductive rail and a conductive structure. The dielectric region is situated on the substrate. The first fin structure protrudes from the substrate and the dielectric region. The second fin structure protrudes from the substrate and the dielectric region, and extends parallel to the first fin structure. The conductive regions are situated on the dielectric region. The first conductive rail is situated within the dielectric region, and electrically connected to a first conductive region of the plurality of conductive regions. Opposite sides of the first conductive rail face the first fin structure and the second fin structure, respectively. The conductive structure penetrates through the substrate and formed under the first conductive rail, and is electrically connected to the first conductive rail.

Abstract: A clock distribution system includes a clock mesh structure which has first metal patterns extending along a first axis, second metal patterns extending along a second axis, third metal patterns extending along a third axis. The first metal patterns, second metal patterns, and third metal patterns are electrically coupled with each other. The second axis is transverse to the first axis. The third axis is oblique to both the first axis and the second axis. The first metal patterns include a main first metal pattern, and other first metal patterns. The second metal patterns include a main second metal pattern, and other second metal patterns. The third metal patterns include a main third metal pattern, and other third metal patterns.

Abstract: Disclosed embodiments herein relate to an integrated circuit including power switches with active regions connected to form a contiguous region. In one aspect, the integrated circuit includes a first layer including a first metal rail extending in a first direction. In one aspect, the integrated circuit includes a second layer above the first layer along a second direction perpendicular to the first direction. The second layer may include active regions for power switches. In one aspect, the active regions of the power switches are connected to form a contiguous region extending in the first direction. The first metal rail may be electrically coupled to the active regions through via contacts. In one aspect, the integrated circuit includes a third layer above the second layer along the second direction. The third layer may include a second metal rail electrically coupled to some of the power switches through additional via contacts.

Abstract: An integrated circuit includes a device, a first interconnect structure disposed above the device and a second interconnect structure positioned below the device. The first interconnect structure includes multiple frontside metal layers. The second interconnect structure includes multiple backside metal layers, where each backside metal layer includes metal conductors routed according to diagonal routing. In some embodiments, a backside interconnect structure can include another backside metal layer that includes metal conductors routed according to mixed-Manhattan-diagonal routing. A variety of techniques can be used to route signals between metal conductors in the backside interconnect structure and cells on one or more frontside metal layers.

Abstract: A clock distribution system includes a clock mesh structure which has a plurality of first metal patterns extending along a first axis, a plurality of second metal patterns extending along a second axis, a plurality of third metal patterns extending along a third axis. The plurality of first metal patterns, the plurality of second metal patterns, and the plurality of third metal patterns are electrically coupled with each other. The second axis is transverse to the first axis. The third axis is oblique to both the first axis and the second axis.

Abstract: Disclosed embodiments herein relate to an integrated circuit including power switches with active regions connected to form a contiguous region. In one aspect, the integrated circuit includes a first layer including a first metal rail extending in a first direction. In one aspect, the integrated circuit includes a second layer above the first layer along a second direction perpendicular to the first direction. The second layer may include active regions for power switches. In one aspect, the active regions of the power switches are connected to form a contiguous region extending in the first direction. The first metal rail may be electrically coupled to the active regions through via contacts. In one aspect, the integrated circuit includes a third layer above the second layer along the second direction. The third layer may include a second metal rail electrically coupled to some of the power switches through additional via contacts.