Patents by Inventor Jacques Faguet

Jacques Faguet has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10115586
    Abstract: A method is provided for depositing a planarization layer over features on a substrate using sequential polymerization chemical vapor deposition. According to one embodiment, the method includes providing a substrate containing a plurality of features with gaps between the plurality of features, delivering precursor molecules by gas phase exposure to the substrate, adsorbing the precursor molecules on the substrate to at least substantially fill the gaps with a layer of the adsorbed precursor molecules, and reacting the precursor molecules to form a polymer layer that at least substantially fills the gaps.
    Type: Grant
    Filed: May 5, 2017
    Date of Patent: October 30, 2018
    Assignee: Tokyo Electron Limited
    Inventors: Jacques Faguet, Bruce A. Altemus, Kazuya Ichiki
  • Publication number: 20170345665
    Abstract: A processing apparatus includes a processing chamber having a substrate holder; a first gas delivery system configured to deliver a first source gas within the processing chamber; a second gas delivery system configured to deliver a second source gas within the processing chamber; an energy activation system; and processing circuitry. The processing circuitry is configured to control first processing parameters for delivery of the first source gas, control second processing parameters for delivery of the second source gas, control processing chamber parameters and energy activation system parameters to cause a reaction of the first source gas and the second source gas with a surface of one or more parts in the processing chamber to etch an atomic layer from the surface of the one or more parts in absence of a plasma, and control vacuum system parameters for removal of one or more reaction gases from the processing chamber.
    Type: Application
    Filed: May 24, 2017
    Publication date: November 30, 2017
    Applicant: Tokyo Electron Limited
    Inventors: Jacques FAGUET, Trace Hurd, Ian Brown
  • Publication number: 20170323784
    Abstract: A method is provided for depositing a planarization layer over features on a substrate using sequential polymerization chemical vapor deposition. According to one embodiment, the method includes providing a substrate containing a plurality of features with gaps between the plurality of features, delivering precursor molecules by gas phase exposure to the substrate, adsorbing the precursor molecules on the substrate to at least substantially fill the gaps with a layer of the adsorbed precursor molecules, and reacting the precursor molecules to form a polymer layer that at least substantially fills the gaps.
    Type: Application
    Filed: May 5, 2017
    Publication date: November 9, 2017
    Inventors: Jacques Faguet, Bruce A. Altemus, Kazuya Ichiki
  • Publication number: 20170037509
    Abstract: A method is provided for coating or filling a porous material. According to one embodiment, the method includes providing the porous material, delivering precursor molecules by gas phase exposure into pores of the porous material, and reacting the precursor molecules to form a polymer inside the pores.
    Type: Application
    Filed: July 12, 2016
    Publication date: February 9, 2017
    Inventors: Jacques Faguet, Junjun Liu
  • Publication number: 20160024651
    Abstract: A system for depositing a thin film on a substrate using a vapor deposition process is described. The deposition system includes a process chamber having a vacuum pumping system configured to evacuate the process chamber, a substrate holder coupled to the process chamber and configured to support the substrate, a gas distribution system coupled to the process chamber and configured to introduce a film forming composition to a process space in the vicinity of a surface of the substrate, a non-ionizing heat source separate from the substrate holder that is configured to receive a flow of the film forming composition and to cause thermal fragmentation of one or more constituents of the film forming composition when heated, and one or more power sources coupled to the heating element array and configured to provide an electrical signal to the at least one heating element zone.
    Type: Application
    Filed: October 5, 2015
    Publication date: January 28, 2016
    Inventor: Jacques Faguet
  • Patent number: 9212420
    Abstract: A chemical vapor deposition (CVD) method for depositing a thin film on a surface of a substrate is described. The CVD method comprises disposing a substrate on a substrate holder in a process chamber, and introducing a process gas to the process chamber, wherein the process gas comprises a chemical precursor. The process gas is exposed to a non-ionizing heat source separate from the substrate holder to cause decomposition of the chemical precursor. A thin film is deposited upon the substrate.
    Type: Grant
    Filed: March 23, 2010
    Date of Patent: December 15, 2015
    Assignee: Tokyo Electron Limited
    Inventors: Eric M. Lee, Raymond Nicholas Vrtis, Mark Leonard O'Neill, Patrick Timothy Hurley, Jacques Faguet, Takashi Matsumoto, Osayuki Akiyama
  • Patent number: 9157152
    Abstract: A system for depositing a thin film on a substrate using a vapor deposition process is described. The deposition system includes a process chamber having a vacuum pumping system configured to evacuate the process chamber, a substrate holder coupled to the process chamber and configured to support the substrate, a gas distribution system coupled to the process chamber and configured to introduce a film forming composition to a process space in the vicinity of a surface of the substrate, a non-ionizing heat source separate from the substrate holder that is configured to receive a flow of the film forming composition and to cause thermal fragmentation of one or more constituents of the film forming composition when heated, and one or more power sources coupled to the heating element array and configured to provide an electrical signal to the at least one heating element zone.
    Type: Grant
    Filed: February 10, 2011
    Date of Patent: October 13, 2015
    Assignee: Tokyo Electron Limited
    Inventors: Jacques Faguet, Eric M. Lee
  • Patent number: 9139910
    Abstract: A method of depositing a thin film on a substrate in a deposition system is described. The method includes disposing a gas heating device comprising a plurality of heating element zones in a deposition system, and independently controlling a temperature of each of the plurality of heating element zones, wherein each of the plurality of heating element zones having one or more resistive heating elements. Additionally, the method includes providing a substrate on a substrate holder in the deposition system, wherein the substrate holder has one or more temperature control zones. The method further includes providing a film forming composition to the gas heating device coupled to the deposition system, pyrolyzing one or more constituents of the film forming composition using the gas heating device, and introducing the film forming composition to the substrate in the deposition system to deposit a thin film on the substrate.
    Type: Grant
    Filed: June 11, 2010
    Date of Patent: September 22, 2015
    Assignee: Tokyo Electron Limited
    Inventors: Eric M. Lee, Jacques Faguet, Eric J. Strang
  • Publication number: 20150152556
    Abstract: A processing method and apparatus uses at least one electric field applicator (34) biased to produce a spatial-temporal electric field to affect a processing medium (26), suspended nano-objects (28) or the substrate (30) in processing, interacting with the dipole properties of the medium (26) or particles to construct structure on the substrate (30). The apparatus may include a magnetic field, an acoustic field, an optical force, or other generation device. The processing may affect selective localized layers on the substrate (30) or may control orientation of particles in the layers, control movement of dielectrophoretic particles or media, or cause suspended particles of different properties to follow different paths in the processing medium (26). Depositing or modifying a layer on the substrate (30) may be carried out.
    Type: Application
    Filed: December 19, 2014
    Publication date: June 4, 2015
    Inventors: Jozef Brcka, Eric M. Lee, Jacques Faguet, Hongyu Henry Yue
  • Patent number: 8916055
    Abstract: A processing method and apparatus uses at least one electric field applicator (34) biased to produce a spatial-temporal electric field to affect a processing medium (26), suspended nano-objects (28) or the substrate (30) in processing, interacting with the dipole properties of the medium (26) or particles to construct structure on the substrate (30). The apparatus may include a magnetic field, an acoustic field, an optical force, or other generation device. The processing may affect selective localized layers on the substrate (30) or may control orientation of particles in the layers, control movement of dielectrophoretic particles or media, or cause suspended particles of different properties to follow different paths in the processing medium (26). Depositing or modifying a layer on the substrate (30) may be carried out.
    Type: Grant
    Filed: July 31, 2012
    Date of Patent: December 23, 2014
    Assignee: Tokyo Electron Limited
    Inventors: Jozef Brcka, Jacques Faguet, Eric M. Lee, Hongyu Yue
  • Patent number: 8895942
    Abstract: A system for curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The system comprises one or more process modules configured for exposing the low-k dielectric film to electromagnetic (EM) radiation, such as infrared (IR) radiation and ultraviolet (UV) radiation.
    Type: Grant
    Filed: September 16, 2008
    Date of Patent: November 25, 2014
    Assignee: Tokyo Electron Limited
    Inventors: Junjun Liu, Jacques Faguet, Eric M. Lee, Dorel I. Toma, Hongyu Yue
  • Patent number: 8852347
    Abstract: A gas heating device and a processing system for use therein are described for depositing a thin film on a substrate using a vapor deposition process. The gas heating device includes a heating element array having a plurality of heating element zones configured to receive a flow of a film forming composition across or through said plurality of heating element zones in order to cause pyrolysis of one or more constituents of the film forming composition when heated. Additionally, the processing system may include a substrate holder configured to support a substrate. The substrate holder may include a backside gas supply system configured to supply a heat transfer gas to a backside of said substrate, wherein the backside gas supply system is configured to independently supply the heat transfer gas to multiple zones at the backside of the substrate.
    Type: Grant
    Filed: June 11, 2010
    Date of Patent: October 7, 2014
    Assignee: Tokyo Electron Limited
    Inventors: Eric M. Lee, Jacques Faguet, Eric J. Strang
  • Patent number: 8815014
    Abstract: A method and system for plasma-assisted thin film vapor deposition on a substrate is described. The system includes a process chamber including a first process space having a first volume, a substrate stage coupled to the process chamber and configured to support a substrate and expose the substrate to the first process space, a plasma generation system coupled to the process chamber and configured to generate plasma in at least a portion of the first process space, and a vacuum pumping system coupled to the process chamber and configured to evacuate at least a portion of the first process space. The system further includes a process volume adjustment mechanism coupled to the process chamber and configured to create a second process space that includes at least a part of the first process space and that has a second volume less than the first volume, the substrate being exposed to the second process space.
    Type: Grant
    Filed: February 10, 2011
    Date of Patent: August 26, 2014
    Assignee: Tokyo Electron Limited
    Inventors: Jacques Faguet, Masahide Iwasaki, Toshihisa Nozawa
  • Publication number: 20130217210
    Abstract: A processing method and apparatus uses at least one electric field applicator (34) biased to produce a spatial-temporal electric field to affect a processing medium (26), suspended nano-objects (28) or the substrate (30) in processing, interacting with the dipole properties of the medium (26) or particles to construct structure on the substrate (30). The apparatus may include a magnetic field, an acoustic field, an optical force, or other generation device. The processing may affect selective localized layers on the substrate (30) or may control orientation of particles in the layers, control movement of dielectrophoretic particles or media, or cause suspended particles of different properties to follow different paths in the processing medium (26). Depositing or modifying a layer on the substrate (30) may be carried out.
    Type: Application
    Filed: July 31, 2012
    Publication date: August 22, 2013
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Jozef Brcka, Jacques Faguet, Eric M. Lee, Hongyu Yue
  • Publication number: 20120315404
    Abstract: A method for vapor deposition on a substrate in a vapor deposition system having a process space separated from a transfer space. The method disposes a substrate in a process space of a processing system that is vacuum isolated from a transfer space of the processing system, processes the substrate at either of a first position or a second position in the process space while maintaining vacuum isolation from the transfer space by way of a movement accommodating sealing material, and deposits a material on the substrate at either the first position or the second position.
    Type: Application
    Filed: August 1, 2012
    Publication date: December 13, 2012
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yicheng LI, Tadahiro ISHIZAKA, Kaoru YAMAMOTO, Atsushi GOMI, Masamichi HARA, Toshiaki FUJISATO, Jacques FAGUET, Yasushi MIZUSAWA
  • Patent number: 8291856
    Abstract: A method and system for depositing a thin film on a substrate using a vapor deposition process is described. The processing system comprises a gas heating device for heating one or more constituents of a film forming composition. The gas heating device comprises one or more resistive heating elements configured to receive an electrical current from one or more power sources. Additionally, the gas heating device comprises a mounting structure configured to support the one or more resistive heating elements. Furthermore, the gas heating device comprises one or more static mounting devices coupled to the mounting structure and configured to fixedly couple the one or more resistive heating elements to the mounting structure, and one or more dynamic mounting devices coupled to the mounting structure and configured to automatically compensate for changes in a length of each of the one or more resistive heating elements.
    Type: Grant
    Filed: March 7, 2008
    Date of Patent: October 23, 2012
    Assignee: Tokyo Electron Limited
    Inventors: Ronald Nasman, Patrick J. Biel, Jacques Faguet
  • Patent number: 8272347
    Abstract: A gas heating device that may be used in a system for depositing a thin film on a substrate using a vapor deposition process is described. The gas heating device may be configured for heating one or more constituents of a film forming composition. The gas heating device comprises one or more resistive heating elements. Additionally, the gas heating device comprises a mounting structure configured to support at least one of the one or more resistive heating elements. Furthermore, the gas heating device comprises a static mounting device coupled to the mounting structure and configured to fixedly couple the at least one of the one or more resistive heating elements to the mounting structure, and a dynamic mounting device coupled to the mounting structure and configured to automatically compensate for changes in a length of the at least one of the one or more resistive heating elements.
    Type: Grant
    Filed: September 14, 2009
    Date of Patent: September 25, 2012
    Assignee: Tokyo Electron Limited
    Inventors: Ronald Nasman, Jacques Faguet
  • Publication number: 20120213929
    Abstract: A method of performing a filament-assisted chemical vapor deposition process is described. The method includes providing a substrate holder in a process chamber of a chemical vapor deposition system, providing a non-ionizing heat source separate from the substrate holder in the process chamber, disposing a substrate on the substrate holder, introducing a film forming composition to the process chamber, thermally fragmenting the film forming composition using the non-ionizing heat source, and forming a thin film on the substrate in the process chamber. The non-ionizing heat source includes a gas heating device through and/or over which the film forming composition flows. The method further includes remotely producing a reactive composition, and introducing the reactive composition to the process chamber to interact with the substrate, wherein the reactive composition is introduced sequentially and/or simultaneously with the introducing the film forming composition.
    Type: Application
    Filed: February 18, 2011
    Publication date: August 23, 2012
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Eric M. LEE, Jacques FAGUET
  • Patent number: 8242460
    Abstract: A process module for treating a dielectric film and, in particular, a process module for exposing, for example, a low dielectric constant (low-k) dielectric film to ultraviolet (UV) radiation is described. The process module includes a process chamber, a substrate holder coupled to the process chamber and configured to support a substrate, and a radiation source coupled to the process chamber and configured to expose the dielectric film to electromagnetic (EM) radiation. The radiation source includes a UV source, wherein the UV source has a UV lamp, and a reflector for directing reflected UV radiation from the UV lamp to the substrate. The reflector has a dichroic reflector, and a non-absorbing reflector disposed between the UV lamp and the substrate, and configured to reflect UV radiation from the UV lamp towards the dichroic reflector, wherein the non-absorbing reflector substantially prevents direct UV radiation from the UV lamp to the substrate.
    Type: Grant
    Filed: March 25, 2011
    Date of Patent: August 14, 2012
    Assignee: Tokyo Electron Limited
    Inventors: Hongyu Yue, Junjun Liu, Jacques Faguet, Dorel I. Toma
  • Patent number: 8163087
    Abstract: A plasma enhanced atomic layer deposition (PEALD) method and system, the system including a process chamber and a substrate holder provided within the processing chamber and configured to support a substrate on which a predetermined film will be formed. A first process material supply system is configured to supply a first process material to the process chamber, and a second process material supply system configured to supply a second process material to the process chamber in order to provide a reduction reaction with the first process material to form the predetermined film on the substrate. Also included is a power source configured to couple electromagnetic power to the process chamber to generate a plasma within the process chamber to facilitate the reduction reaction, and a chamber component exposed to the plasma and made from a film compatible material that is compatible with the predetermined film deposited on the substrate.
    Type: Grant
    Filed: March 31, 2005
    Date of Patent: April 24, 2012
    Assignee: Tokyo Electron Limited
    Inventors: Jacques Faguet, Frank M. Cerio, Jr., Tsukasa Matsuda, Kaoru Yamamoto