Abstract: A rocket propulsion device including, a case having a propellant therein, the case in the form of a tube, a nozzle having at least part inserted in the case, and configured to discharge gas upon burning the propellant, and a locking unit disposed to be wound on the nozzle, the locking unit in the form of a band having both ends open, wherein a through hole for inserting the locking unit therein is formed at one region on a circumference of the case, and the both ends of the locking unit are located at a region facing the one region, whereby a rocket propulsion device having a simplified structure and a facilitated alignment of a thrust line can be implemented.

Abstract: When contacting a bit line and a charge storage electrode to a source/drain of the MOS transistor during a manufacturing process of a highly integrated semiconductor device, a contact pad is formed by filling up polysilicon into a contact hole that had been made using a self-align method in order not to damage the word line or the bit line as a result of a small processing margin during a contact hole forming process. Also, the occurrence of a topological difference during a semiconductor manufacturing process is minimized by forming an oxide layer such as SOG, BPSG, TEOS, and PECVD oxide over the top of the field oxide for a flattening effect.