Abstract: Disclosed are a light absorbent agent polymer for organic anti-reflective coating which can prevent diffused light reflection of bottom film layer or substrate and reduce standing waves caused by a variation of thickness of the photoresist itself, thereby, increasing uniformity of the photoresist pattern, in a process for forming ultra-fine patterns of photoresist for photolithography by using 193 nm ArF among processes for manufacturing semiconductor devices, and its preparation method. Also, the present invention discloses an organic anti-reflective coating composition comprising a light absorbent agent polymer for the organic anti-reflective coating and a pattern formation process using the coating composition.

Abstract: The present invention relates to photoresist compositions for EUV and methods for forming photoresist patterns. More specifically, fine photoresist patterns: of less than 50 nm without collapse are formed with EUV (Extreme Ultraviolet) as an exposure light source by using a negative photoresist composition comprising a melamine derivative and polyvinylphenol.

Abstract: An organic anti-reflective coating polymer suitable for use in formation of a photoresist pattern acting as an ion implantation barrier during fabrication of a semiconductor device. The organic anti-reflective coating polymer has a weight-average molecular weight of 2,000-30,000 and is represented by Formula 1 below: wherein R is hydrogen or methyl, R1-R9 are each independently hydrogen, C1-C6 linear or branched alkyl, hydroxy, alkoxyalkyl, methoxycarbonyl, carboxyl, or hydroxymethyl, 1 is 1 or 2, m is 2, 3, or 4, and x, y, and z are each independently from 0.05 to 0.95.

Abstract: An organic anti-reflective coating composition and a method for forming a photoresist pattern using the same in order to improve uniformity of the pattern in an ultra-fine pattern formation process of the photoresist. In one aspect, organic anti-reflective coating composition contains a light absorbent agent, a cross-linking agent, a thermal acid generator, and a formanilide photo-base generator.

Abstract: Overcoating compositions for a photoresist and methods of using the same are disclosed. More specifically, overcoating compositions for a photoresist comprising materials which can weaken acid stably are disclosed. These materials neutralize large amounts of acid produced in the upper portion of a photoresist film, thereby uniformizing vertical distribution of the acids. As a result, vertical and fine patterns of less than 100 nm thickness can be obtained.

Abstract: Disclosed herein are a top anti-reflective coating polymer used in a photolithography process, which is one of the fabrication processes for a semiconductor device, a method for preparing the anti-reflective coating polymer, and an anti-reflective coating composition comprising the anti-reflective coating polymer. Specifically, the top anti-reflective coating polymer is used in immersion lithography for the fabrication of a sub-50 nm semiconductor device. The top anti-reflective coating polymer is represented by Formula 1 below: wherein R1, R2 and R3 are independently hydrogen or a methyl group; and a, b and c represent the mole fraction of each monomer, and are in the range between about 0.05 and about 0.9. Since a top anti-reflective coating formed using the above anti-reflective coating polymer is not soluble in water, it can be applied to immersion lithography using water as the medium for a light source.

Abstract: A method for forming a fine pattern of a semiconductor device comprises the steps of: forming a first hard mask pattern having a width of W1 and a thickness of T1 over an underlying layer formed over a semiconductor substrate; forming a second hard mask film with a planar type over the resulting structure and planarizing the second hard masks to expose the first hard mask pattern; removing the first hard mask pattern by a thickness T2 from the top surface (0<T2<T1); performing a trimming process on the second hard mask film to form a second hard mask pattern having a slope side wall; performing a second trimming process on the second hard mask pattern to separate the second hard mask pattern from the first hard mask pattern and form a third hard mask pattern having a width of W2; and patterning the underlying layer using the first hard mask pattern and the third hard mask pattern as etching masks.

Abstract: A method for forming a fine pattern of a semiconductor device include forming a stack structure including a 1st layer hard mask film to a nth layer hard mask film (n is an integer ranging from 2 or more) over an underlying layer formed over a semiconductor substrate. The nth layer hard mask film, the top layer, is selectively etched to obtain a first hard mask pattern of the nth layer. A second hard mask pattern of the nth layer is formed between the first hard mask patterns of the nth layer. A (n-1)th layer hard mask film is etched using the first and the second hard mask pattern of the nth layer as etching masks. The (c) step to the (d) step repeat to form the first and the second hard mask patterns of the 1st layer over the underlying layer. And, the underlying layer is etched using the first and second hard mask patterns of the 1st layer as etching masks.

Abstract: A method for forming a fine pattern of a semiconductor device comprises: forming a photoresist layer including a first photoresist pattern region having a first pattern density and a second photoresist pattern region having a second pattern density which is denser than the first pattern density; performing an exposure process selectively exposing one of the first and the second photoresist pattern regions with an exposure mask; and performing a resist flow process on the resulting structure.

Abstract: A method for forming a fine photoresist pattern of a semiconductor device, the method comprising the steps of forming a chemically amplified photoresist film over an underlying layer formed over a semiconductor substrate to form a first photoresist pattern; exposing the first photoresist pattern without exposure mask to bake the resulting structure; and flowing the photoresist of the first photoresist pattern to obtain a second photoresist pattern.

Abstract: An inorganic hard mask composition, which is useful in the manufacture of semiconductor devices.

Abstract: Disclosed herein is a method for manufacturing a semiconductor device that includes performing an O2 plasma treatment step after forming a Si-containing anti-reflection film.

Abstract: Disclosed herein is a method for manufacturing a semiconductor device that includes performing an O2 plasma treatment step after forming a Si-containing photoresist film.

Abstract: A process of forming ultra fine patterns using bottom anti-reflective coating containing acid generator. More particularly, a process of forming vertical patterns using an organic bottom anti-reflective coating containing excessive amount of acid generator, in order to prevent formation of sloping patterns due to photoresist resins absorbing wavelength of light used as light sources during lithography process using light sources such as KrF, ArF, VUV, EUV, E-beam and ion beam, even when photoresist resins having high absorbance to light source are used.

Abstract: Disclosed is a method for manufacturing a semiconductor device using an immersion lithography process comprising pretreating a wafer with water of least about 40° C. after an exposure step and before a post-exposure baking step, thereby effectively reducing water mark defects.

Abstract: A method for forming a pattern of a semiconductor device is disclosed which can increase the contact area between a photoresist and an anti-reflective film by performing an etching process on the anti-reflective film in a process of forming a photoresist pattern for a semiconductor device so as to form fine irregularities, thereby preventing collapse of a photoresist pattern. The disclosed method includes: (a) forming an organic anti-reflective film by coating an organic anti-reflective coating composition onto an upper portion of a layer to be etched, and performing a baking process thereto; (b) forming fine irregularities on the organic anti-reflective film by performing an etching process on the formed organic anti-reflective film; and (c) forming a photoresist pattern by coating a photoresist on the upper portion of the organic anti-reflective film, exposing the photoresist and then developing the same.

Abstract: Disclosed herein is a composition for removing an immersion lithography solution. The composition includes an organic solvent and an acid compound. Also disclosed is a method for manufacturing a semiconductor device including an immersion lithography process. When a photoresist pattern is formed by the immersion lithography process, an exposure process is performed on a photoresist film formed over an underlying layer with an immersion lithography exposer. Then, the composition is dripped over the wafer to remove residual immersion lithography solution on the photoresist film, thereby improving a water mark defect phenomenon.

Abstract: The present invention discloses a cross-linking monomer represented by the following Chemical Formula 1, a process for preparing a photoresist polymer using the same, and said photoresist polymer: <Chemical Formula> wherein, R? and R? individually represent hydrogen or methyl; m represents a number of 1 to 10; and R is selected from the group consisting of straight or branched C1-10 alkyl, straight or branched C1-10 ester, straight or branched C1-10 ketone, straight or branched C1-10 carboxylic acid, straight or branched C1-10 acetal, straight or branched C1-10 alkyl including at least one hydroxyl group, straight or branched C1-10 ester including at least one hydroxyl group, straight or branched C1-10 ketone including at least one hydroxyl group, straight or branched C1-10 carboxylic acid including at least one hydroxyl group, and straight or branched C1-10 acetal including at least one hydroxyl group.

Abstract: A cross-linking polymer for an organic anti-reflective coating that is able to improve the uniformity of an ultra-fine photoresist pattern formed using a photolithography process and an ArF light source with 194 nm wavelength. Organic anti-reflective coatings including the same and a method for forming a photoresist pattern using the same are also disclosed. The disclosed cross-linking polymer is capable of preventing scattered reflection from a bottom film layer, eliminating standing wave effect due to alteration of thickness of the photoresist film, and increasing uniformity of the thickness of photoresist pattern. At the same time, the disclosed cross-linking pattern increases the etching velocity of the organic anti-reflective coating so that it can be easily removed.

Abstract: Disclosed are a light absorbent agent polymer for organic anti-reflective coating which can prevent diffused light reflection of the bottom film layer or substrate and reduce standing waves caused by variation of thickness of the photoresist itself, thereby, increasing uniformity of the photoresist pattern, in a process for forming ultra-fine patterns of photoresist for photolithography by using 193 nm ArF among processes for manufacturing semiconductor device, and its preparation method. Also, the present invention discloses an organic anti-reflective coating composition comprising the light absorbent agent polymer for the organic anti-reflective coating and a pattern formation process using the coating composition.