Patents by Inventor Jae Chang Jung

Jae Chang Jung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • ArF photoresist copolymers
    Patent number: 6808859
    Abstract: A photoresist copolymer is prepared from one or more carboxy-substituted bicycloalkene monomers, and this copolymer is used to prepare a photoresist for submicrolithography processes employing deep ultraviolet (ArF) as a light source. In addition to having high etch resistance and thermal resistance, the photoresist has good adhesiveness to the substrate and can be developed in a TMAH solution.
    Type: Grant
    Filed: June 27, 2000
    Date of Patent: October 26, 2004
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventors: Jae Chang Jung, Cheol Kyu Bok, Ki Ho Baik
  • Photoresist monomers, polymers thereof and photoresist compositons containing the same
    Patent number: 6806025
    Abstract: Photoresist monomers of following Formula 1, photoresist polymers thereof, and photoresist compositions containing the same. The photoresist composition has excellent etching resistance, heat resistance and adhesiveness to a wafer, and is developable in aqueous tetramethylammonium hydroxide (TMAH) solution. In addition, the photoresist composition has low light absorbance at 157 nm wavelength, and thus is suitable for a photolithography process using ultraviolet light sources such as VUV (157 nm) in fabricating a minute circuit for a high integration semiconductor device. wherein, X1, X2, Y1, Y2, Y3, Y4, Y5, Y6, Y7, Y8, l and m are as defined in the specification of the invention.
    Type: Grant
    Filed: February 20, 2002
    Date of Patent: October 19, 2004
    Assignee: Hynix Semiconductor Inc.
    Inventors: Geun Su Lee, Jae Chang Jung, Ki Soo Shin
  • Reflection-inhibiting resin used in process for forming photoresist pattern
    Patent number: 6797451
    Abstract: The present invention provides a resin of the formula: where R1, R2, R3, x and y are those defined herein. The present invention also provides methods for using the above described resin to inhibit reflection of light from the lower layer of a wafer substrate during a photoresist pattern formation process.
    Type: Grant
    Filed: July 3, 2002
    Date of Patent: September 28, 2004
    Assignee: Hynix Semiconductor Inc.
    Inventors: Sung Eun Hong, Min Ho Jung, Hyeong Soo Kim, Jae Chang Jung, Ki Ho Baik
  • Pattern width slimming-inhibiting method of photoresist pattern using photoresist composition containing thermal acid generator
    Patent number: 6787285
    Abstract: A pattern width slimming-inhibiting method of photoresist pattern using photoresist composition containing thermal acid generator. When the formed pattern is heated, a thermal generator generates acid during the heating process, and a cross-linking reaction occurs to photoresist compositions, thereby preventing pattern width slimming due to SEM-beam for CD measurement.
    Type: Grant
    Filed: December 5, 2001
    Date of Patent: September 7, 2004
    Assignee: Hynix Semiconductor Inc.
    Inventors: Keun Kyu Kong, Gyu Dong Park, Jae Chang Jung, Ki Soo Shin
  • Additive for photoresist composition for resist flow process
    Publication number: 20040166437
    Abstract: The present invention provides an additive for a photoresist composition for a resist flow process. A compound of following Formula 1 having low glass transition temperature is added to a photoresist composition containing a polymer which is not suitable for the resist flow process due to its high glass transition temperature, thus improving a flow property of the photoresist composition. As a result, the photoresist composition comprising an additive of Formula 1 can be used for the resist flow process.
    Type: Application
    Filed: February 27, 2004
    Publication date: August 26, 2004
    Applicant: Hynix Semiconductor Inc.
    Inventors: Min Ho Jung, Sung Eun Hong, Jae Chang Jung, Geun Su Lee, Ki Ho Baik
  • Photoresist polymer for top-surface imaging process by silylation and photoresist composition containing the same
    Patent number: 6770415
    Abstract: A photoresist polymer for a top-surface imaging process by silylation (TIPS), and a photoresist composition comprising the same. The protecting group of the present photoresist polymer is selectively protected in an exposed region, and thus a hydroxyl group is generated. The hydroxyl group reacts with the silylation agent to cause a silylation process. Accordingly, when the photoresist film is dry-developed, the exposed region only remains to form a negative pattern. In addition, the present photoresist composition has excellent adhesiveness to a substrate, thus preventing a pattern collapse in forming a minute pattern. As a result, the present photoresist composition is suitable for a lithography process using light sources such as ArF (193 nm), VUV (157 nm) and EUV (13 nm).
    Type: Grant
    Filed: June 19, 2001
    Date of Patent: August 3, 2004
    Assignee: Hynix Semiconductor Inc.
    Inventors: Geun Su Lee, Cha Won Koh, Jae Chang Jung, Min Ho Jung, Ki Ho Baik
  • Organic polymer for organic anti-reflective coating layer and preparation thereof
    Patent number: 6770720
    Abstract: Disclosed is an organic anti-reflective film composition suitable for use in submicrolithography, comprising a compound of Formula 13 and a compound of Formula 14. The organic anti-reflective film effectively absorbs the light penetrating through the photoresist film coated on top of the anti-reflective film, thereby greatly reducing the standing wave effect. Use of organic anti-reflective films of the present invention allows patterns to be formed in a well-defined, ultrafine configuration, providing a great contribution to the high integration of semiconductor devices. wherein b, c, R′, R″, R1, R2, R3, and R4 are those defined herein.
    Type: Grant
    Filed: December 4, 2002
    Date of Patent: August 3, 2004
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventors: Jae-chang Jung, Keun-kyu Kong, Min-ho Jung, Sung-eun Hong, Ki-ho Baik
  • Additive for photoresist composition for resist flow process
    Patent number: 6770414
    Abstract: The present invention provides an additive for a photoresist composition for a resist flow process. A compound of following Formula 1 having low glass transition temperature is added to a photoresist composition containing a polymer which is not suitable for the resist flow process due to its high glass transition temperature, thus improving a flow property of the photoresist composition. As a result, the photoresist composition comprising an additive of Formula 1 can be used for the resist flow process. wherein, A, B, R and R′ are as defined in the specification of the invention.
    Type: Grant
    Filed: June 11, 2001
    Date of Patent: August 3, 2004
    Assignee: Hynix Semiconductor Inc.
    Inventors: Min Ho Jung, Sung Eun Hong, Jae Chang Jung, Geun Su Lee, Ki Ho Baik
  • Overcoating composition for photoresist and method for forming photoresist pattern using the same
    Publication number: 20040142279
    Abstract: Overcoating compositions for photoresist and methods for reducing linewidth of the photoresist patterns are disclosed. More specifically, an overcoating composition containing acids is coated on a whole surface of a photoresist pattern formed by a common lithography process to diffuse the acids into the photoresist pattern. The photoresist in the portion where the acids are diffused is developed with an alkali solution to be removed. As a result, the linewidth of positive photoresist patterns can be reduced, and the linewidth of negative photoresist patterns can be prevented from slimming in a subsequent linewidth measurement process using SEM.
    Type: Application
    Filed: November 26, 2003
    Publication date: July 22, 2004
    Inventors: Cheol Kyu Bok, Jae Chang Jung, Seung Chan Moon, Ki Soo Shin
  • Method for forming patterns of a semiconductor device
    Patent number: 6764964
    Abstract: A method for forming patterns of a semiconductor device is disclosed which inhibits collapse of photoresist patterns in photoresist pattern-forming processes of the semiconductor device by forming micro-bends in an anti-reflective film to increase the contact area between a photoresist and the anti-reflective film and, simultaneously prevents critical dimension (CD) alteration of the photoresist pattern by creating micro-bends and double-laminating of anti-reflective films with different refractive indices and light-absorbencies.
    Type: Grant
    Filed: December 30, 2002
    Date of Patent: July 20, 2004
    Assignee: Hynix Semiconductor Inc.
    Inventors: Young-sun Hwang, Jae-chang Jung, Sung-koo Lee, Chcol-kyu Bok, Ki-soo Shin
  • Over-coating composition for photoresist, and processes for forming photoresist patterns using the same
    Patent number: 6764806
    Abstract: The present invention provides an over-coating composition comprising a basic compound for coating a photoresist composition to provide a vertical photoresist pattern.
    Type: Grant
    Filed: December 1, 2000
    Date of Patent: July 20, 2004
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventors: Jae Chang Jung, Keun Kyu Kong, Cha Won Koh, Jin Soo Kim, Ki Ho Baik
  • Novel ArF photoresist copolymers
    Publication number: 20040131968
    Abstract: A photoresist copolymer is prepared from one or more carboxy-substituted bicycloalkene monomers, and this copolymer is used to prepare a photoresist for submicrolithography processes employing deep ultraviolet (ArF) as a light source. In addition to having high etch resistance and thermal resistance, the photoresist has good adhesiveness to the substrate and can be developed in a TMAH solution.
    Type: Application
    Filed: December 18, 2003
    Publication date: July 8, 2004
    Applicant: Hyundai Electronics Industries Co., Ltd.
    Inventors: Jae Chang Jung, Cheol Kyu Bok, Ki Ho Baik
  • Photoresist monomers, polymers thereof and photoresist compositions using the same
    Patent number: 6753448
    Abstract: The present invention provides compounds represented by formulas 1a and 1b′; and photoresist polymers derived from the same. The present inventors have found that photoresist polymers derived from compounds of formulas 1a, 1b, or mixtures thereof, having an acid labile protecting group have excellent durability, etching resistance, reproducibility, adhesiveness and resolution, and as a result are suitable for lithography processes using deep ultraviolet light sources such as KrF, ArF, VUV, EUV, electron-beam, and X-ray, which can be applied to the formation of the ultrafine pattern of 4G and 16G DRAMs as well as the DRAM below 1G: where R1, R2 and R3 are those defined herein.
    Type: Grant
    Filed: December 26, 2002
    Date of Patent: June 22, 2004
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventors: Geun Su Lee, Jae Chang Jung, Ki Ho Baik
  • Photoresist additive for preventing acid migration and photoresist composition comprising the same
    Patent number: 6753128
    Abstract: Photoresist additives for preventing the acid generated in the exposed area during the course of a photolithography process from being diffused to the unexposed area, photoresist compositions containing the same, and a process for forming a photoresist pattern using the same. Photoresist compositions comprising the disclosed additive can prevent acid diffusion effectively even if the additive is used in low concentrations, thereby improving LER, resulting in excellent profiles and lowering optimum irradiation energies. wherein, R1, R2, R3, R4 and k are as defined herein.
    Type: Grant
    Filed: October 16, 2002
    Date of Patent: June 22, 2004
    Assignee: Hynix Semiconductor Inc.
    Inventors: Geun Su Lee, Jae Chang Jung, Ki Soo Shin
  • Chemical amplification photoresist monomers, polymers therefrom and photoresist compositions containing the same
    Patent number: 6749990
    Abstract: A chemical amplification photoresist monomer, a photoresist polymer prepared thereof, and a photoresist composition using the polymer. More specifically, a chemical amplification photoresist polymer comprising a fluorine-containing monomer represented by Chemical Formula 1, and a composition comprising the polymer. The photoresist composition has excellent etching resistance, heat resistance and adhesiveness, and is developable in aqueous tetramethylammonium hydroxide (TMAH) solution. As the composition has low light absorbance at 193 nm and 157 nm wavelength, it is very useful for forming ultramicro pattern in the process using a light source of far ultraviolet, especially of VUV (157 nm). In the Formula, R1, R2, R3 and R4 is defined in the specification.
    Type: Grant
    Filed: January 22, 2002
    Date of Patent: June 15, 2004
    Assignee: Hynix Semiconductor Inc.
    Inventors: Jae Chang Jung, Geun Su Lee, Ki Soo Shin
  • Photoresist overcoating composition
    Publication number: 20040106071
    Abstract: Photoresist overcoating compositions are disclosed. More specifically, a photoresist overcoating composition comprising a compound represented by Formula 1 is disclosed that can reduce critical dimension difference between the center and the edge of a wafer in a patterning process.
    Type: Application
    Filed: June 24, 2003
    Publication date: June 3, 2004
    Inventors: Young Sun Hwang, Sam Young Kim, Jae Chang Jung
  • Photoresist monomers containing fluorine-substituted benzylcarboxylate and photoresist polymers comprising the same
    Patent number: 6737217
    Abstract: Photoresist monomers, photoresist polymers prepared therefrom, and photoresist compositions using the polymer are disclosed. The photoresist polymers include photoresist monomers containing fluorine-substituted benzylcarboxylate group represented by Formula 1. The photoresist composition has excellent etching resistance, heat resistance and adhesiveness, and is developable in aqueous tetramethylammonium hydroxide (TMAH) solution. As the composition has low light absorbance at 193 nm and 157 nm wavelength, it is suitable for a process using ultraviolet light source such as VUV (157 nm). In the Formula, R1, R2, R3 and m are defined in the specification.
    Type: Grant
    Filed: March 27, 2002
    Date of Patent: May 18, 2004
    Assignee: Hynix Semiconductor Inc.
    Inventors: Geun Su Lee, Jae Chang Jung, Ki Soo Shin
  • Organic anti-reflective coating polymers, anti-reflective coating composition comprising the same and preparation methods thereof
    Publication number: 20040091623
    Abstract: An organic anti-reflective polymer which prevents back reflection of lower film layers and eliminates standing wave that is occurred by a thickness change of photoresist and light, in a process for fabricating ultrafine patterns that use photoresist for lithography by using 193 nm ArF and its preparation method. More particularly, the organic anti-reflective polymer of the present invention is useful for fabricating ultrafine patterns of 64M, 256M, 1G, and 4G DRAM semiconductor devices. A composition containing such organic anti-reflective polymer, an anti-reflective coating layer made therefrom and a preparation method thereof.
    Type: Application
    Filed: November 6, 2003
    Publication date: May 13, 2004
    Applicant: Hynix Semiconductor Inc.
    Inventors: Min-Ho Jung, Jae-Chang Jung, Geun-Su Lee, Ki-Soo Shin
  • Maleimide-photoresist polymers containing fluorine and photoresist compositions comprising the same
    Patent number: 6720129
    Abstract: Photoresist polymers, and photoresist compositions using the polymer are disclosed. More specifically, photoresist polymers containing maleimide represented by Formula 1. Photoresist compositions including the photoresist polymers have excellent etching resistance, heat resistance and adhesiveness, and development ability in aqueous tetramethylammonium hydroxide (TMAH) solution. As the compositions have low light absorbance at 193 nm and 157 nm wavelength, they are suitable for a process using ultraviolet light source such as VUV (157 nm). wherein, 1, R1, R2, R3, R, R′, R″, R″′, X, a and b are defined in the specification.
    Type: Grant
    Filed: March 27, 2002
    Date of Patent: April 13, 2004
    Assignee: Hynix Semiconductor Inc
    Inventors: Geun Su Lee, Jae Chang Jung, Ki Soo Shin
  • Method for forming patterns in a semiconductor device
    Publication number: 20040067655
    Abstract: A method for forming a pattern in a semiconductor device is disclosed which can increase the contact area between a photoresist and an anti-reflective film by performing an etching process on the anti-reflective film in a process of forming a photoresist pattern for a semiconductor device so as to form fine irregularities, thereby preventing collapse of a photoresist pattern. The disclosed method includes (a) forming an organic anti-reflective film by coating an organic anti-reflective coating composition onto an upper portion of a layer to be etched, and performing a baking process thereto; (b) forming fine irregularities on the organic anti-reflective film by performing an etching process on the formed organic anti-reflective film; and (c) forming a photoresist pattern by coating a photoresist on the upper portion of the organic anti-reflective film, exposing the photoresist and then developing the same.
    Type: Application
    Filed: June 13, 2003
    Publication date: April 8, 2004
    Inventors: Sung-Koo Lee, Jae-Chang Jung, Young-Sun Hwang, Cheol-Kyu Bok, Ki-Soo Shin