Abstract: An array substrate for a transflective liquid crystal display device includes a substrate; a thin film transistor on the substrate, the thin film transistor including an active layer, a gate electrode, a source electrode and a drain electrode; a gate line connected to the gate electrode; a data line connected to the source electrode, the data line defining a pixel region with the gate line; an active extension portion extending from the active layer to the pixel region; a first insulating layer on the active extension portion; a storage electrode on the first insulating layer over the active extension portion; a second insulating layer on the storage electrode; a reflective plate on the second insulating layer over the storage electrode, the reflective plate extending over one end of the data line and connected to an adjacent reflective plate; a third insulating layer on the reflective plate; and a pixel electrode on the third insulating layer, the pixel electrode extending over one end of the data line and c

Abstract: A bi-directional driving circuit of a liquid crystal display (LCD) panel is disclosed, in which forward scanning and backward scanning are available. In a bi-directional driving circuit of an LCD panel having a plurality of blocks, each block includes a first start pulse input terminal to which a start pulse or an output signal of a previous block is input and a second start pulse input terminal to which the start pulse or an output signal of a next block is input. Also, each block includes a first switching portion switching a start pulse signal applied to an input terminal of a first block among the blocks and switching an output signal of a previous block, which is applied to input terminals of the other blocks and a second switching portion switching a start pulse signal applied to an input terminal of the last block and switching an output signal of a previous block, which is applied to input terminals of the other blocks.

Abstract: A method of forming a thin film transistor, includes: forming an active region on a first insulating layer, the active region having a channel region, at least one sub-channel region, and first regions disposed between the channel region and each sub-channel region; sequentially forming a second insulating layer and a first conductive layer over the first insulating layer; patterning the second insulating layer and the first conductive layer to form a gate insulating layer and gate electrode on a channel region of the active layer, and to form a sub-gate insulating layer and associated sub-gate electrode on each sub-channel region of the active layer; forming a mask covering at least a portion of the gate electrode, at least a portion of each sub-gate electrode, and each first region of the active region; and implanting impurities into exposed portions of the active region using the mask to form a source region on a first side of the channel region and a drain region on a second side of the channel region suc

Abstract: A liquid crystal display device that is adapted to prevent a short defect between a gate metal film and a data metal film generated from an insulation breakage of an insulating film caused by a static electricity. In the device, a gate metal film is formed at the center of a semiconductor layer with being interleaved with a first insulating film. A connecting metal film is connected to the gate metal film and is formed at a substrate. A second insulating film covers the gate metal film and the connecting metal film and is provided with a first contact hole to expose a part of each side surface of the semiconductor layer and the center portion of the connecting metal film. A data metal film is provided on the second insulating film contacting the semiconductor layer by way of the first contact hole formed in each side surface of the semiconductor layer.

Abstract: A thin film transistor (TFT) has lightly doped drains which includes heavily doped regions and lightly doped regions. The lightly doped drains are formed simultaneously by a single doping process through a gate insulating layer having different thicknesses. The TFT is fabricated by forming an active layer on an insulated substrate, forming an insulating layer on the active layer, forming a conductive layer on the insulating layer, forming a photoresist pattern on the conductive layer, forming a gate electrode by over etching the conductive layer by using the photoresist pattern as a mask. The first insulating layer is then partially etched by using the photoresist pattern as a mask. As a result, the portions of the first insulating layer overlapped by the photoresist pattern is thicker than the other portions not overlapped by the photoresist pattern. When the entire TFT is induced to impurities, the active regions substantial below the thicker insulating region form the lightly doped drains.

Abstract: An array substrate for use in a liquid crystal display device is fabricated by the steps of forming a buffer layer on a substrate; forming a polycrystalline-silicon active layer on the buffer layer, the said active layer having an island shape; forming a gate insulation layer on the buffer layer to cover the polycrystalline-silicon active layer; forming a first metal layer on the gate insulation layer; forming a second metal layer on the first metal layer; patterning the first and second metal layer to form a gate electrode, a gate line and a gate shorting bar; forming a source contact area and a drain contact area at both sides of the polycrystalline-silicon active layer; forming an interlayer insulator on the gate insulation layer to cover the patterned first and second metal layers; patterning the interlayer insulator and the gate insulation layer so as to form a first contact hole to the source contact area and the second contact hole to a drain contact area, patterning a portion of the interlayer insulat

Abstract: A liquid crystal display and a method for fabricating the same include a first substrate having an active layer with source/drain regions formed therein, a gate line and a data line extending in directions perpendicular to each other formed thereon, a dummy gate insulating film and a dummy gate electrode both formed on the first substrate in fixed patterns isolated from the gate line, an interlayer insulating film on the first substrate inclusive of the dummy gate electrode with a step, a drain electrode formed on the interlayer insulating film to overlap on upper regions of the dummy gate electrode so as to be in contact with the drain region and have a step to the data line, the data line formed on the interlayer insulating having a step to the drain electrode, a passivation film formed on the interlayer insulating film inclusive of the dummy gate electrode and the data line, a contact hole formed to expose the drain electrode overlapped with the dummy gate electrode, and a pixel electrode overlapping upper

Abstract: The present invention discloses a liquid crystal display device including a first insulating substrate having: a) a buffer layer formed on the first substrate; b) an inter-layer insulating film formed on the buffer layer, the inter-layer insulating film having an etching portion, the etching portion is etched; c) a semiconductor island formed on a portion of the buffer layer corresponding to the etching portion; d) data lines formed on the semiconductor island; e) gate lines arranged in a direction perpendicular to the data lines; f) switching elements arranged near cross points of the gate and data lines, each of the switching element having a gate electrode, a source electrode and a drain electrode, the gate electrode extending from the gate line, the source electrode extending from the data line; and g) pixel electrodes formed on a region defined by the gate and data lines, the pixel electrode connecting with the drain electrode, the pixel electrode overlapping an end portion of the data line, the adjacent

Abstract: A liquid crystal display device that is capable of preventing metal wires from being corroded during its long-term use under the high temperature and high humidity circumference. In the device, a pad is positioned at a non-display area of a substrate to be connected to at least one of a gate line and a data line. A driving circuit responds to an electrical signal from the pad to drive a liquid crystal pixel cell provided within said non-display area of the substrate. A semiconductor pattern is opposed to the driving circuit with having the pad therebetween to be connected between the pad and the driving circuit.

Abstract: The thin film transistor includes an insulating substrate, and an active region formed on the insulating substrate. The active region includes a channel region, a source region formed on a first side of the channel region, a drain region formed on a second side of the channel region, a sub-channel region formed between the channel region and at least one of the source region and the drain region, and a first region formed between the channel region and each sub-channel region. The thin film transistor also includes an insulating layer formed on the channel region and each sub-channel region, a gate electrode formed on the insulating layer over the channel region, and a sub-gate electrode formed on the insulating layer over each sub-channel region. When impurities are implanted therein, the first region forms a lightly doped region; otherwise, each first region forms an offset region.