Abstract: A vapor deposition apparatus efficiently performs a deposition process to form a thin film with improved characteristics on a substrate, and a method manufactures an organic light-emitting display apparatus by using such vapor deposition apparatus. The vapor deposition apparatus includes a body including an upper member and a lateral member coupled to the upper member; a receiving portion disposed to face one side of the lateral member; a stage disposed in the receiving portion and supporting the substrate; a plurality of first injection portions disposed in the lateral member and injecting at least one gas into a space between the lateral member and the upper member; a second injection portion disposed in the upper member and injecting at least one gas into the space between the lateral member and the upper member; and a plasma generating portion including a coil and a power source connected to the coil.

Abstract: A vapor deposition apparatus efficiently performs a deposition process to form a thin film with improved characteristics on a substrate, and a method manufactures an organic light-emitting display apparatus by using such vapor deposition apparatus. The vapor deposition apparatus includes a body including an upper member and a lateral member coupled to the upper member; a receiving portion disposed to face one side of the lateral member; a stage disposed in the receiving portion and supporting the substrate; a plurality of first injection portions disposed in the lateral member and injecting at least one gas into a space between the lateral member and the upper member; a second injection portion disposed in the upper member and injecting at least one gas into the space between the lateral member and the upper member; and a plasma generating portion including a coil and a power source connected to the coil.

Abstract: A vapor deposition apparatus efficiently performs a deposition process to form a thin film with improved characteristics on a substrate, and a method manufactures an organic light-emitting display apparatus by using such vapor deposition apparatus. The vapor deposition apparatus includes a body including an upper member and a lateral member coupled to the upper member; a receiving portion disposed to face one side of the lateral member; a stage disposed in the receiving portion and supporting the substrate; a plurality of first injection portions disposed in the lateral member and injecting at least one gas into a space between the lateral member and the upper member; a second injection portion disposed in the upper member and injecting at least one gas into the space between the lateral member and the upper member; and a plasma generating portion including a coil and a power source connected to the coil.

Abstract: A vapor deposition apparatus efficiently performs a deposition process to form a thin film with improved characteristics on a substrate, and a method manufactures an organic light-emitting display apparatus by using such vapor deposition apparatus. The vapor deposition apparatus includes a body including an upper member and a lateral member coupled to the upper member; a receiving portion disposed to face one side of the lateral member; a stage disposed in the receiving portion and supporting the substrate; a plurality of first injection portions disposed in the lateral member and injecting at least one gas into a space between the lateral member and the upper member; a second injection portion disposed in the upper member and injecting at least one gas into the space between the lateral member and the upper member; and a plasma generating portion including a coil and a power source connected to the coil.

Abstract: Disclosed is a variable differential mount apparatus using a Magnetorheological Elastomer (MRE). The apparatus includes a core, a coil, a plurality of MRE supports, and a magnetic path formation member. The core has a plurality of arms disposed thereon. The coil is wound on the plurality of arms, respectively. The plurality of MRE supports are disposed to face the plurality of arms, respectively. The magnetic path formation member is disposed outside the plurality of MRE supports. More specifically, a current is applied to coil to vary the degree of stiffness of the variable differential mount based on a particular driving condition to allow for increased handling and comfort.

Abstract: Disclosed is a variable differential mount apparatus using a Magnetorheological Elastomer (MRE). The apparatus includes a core, a coil, a plurality of MRE supports, and a magnetic path formation member. The core has a plurality of arms disposed thereon. The coil is wound on the plurality of arms, respectively. The plurality of MRE supports are disposed to face the plurality of arms, respectively. The magnetic path formation member is disposed outside the plurality of MRE supports. More specifically, a current is applied to coil to vary the degree of stiffness of the variable differential mount based on a particular driving condition to allow for increased handling and comfort.

Abstract: A vapor deposition apparatus efficiently performs a deposition process to form a thin film with improved characteristics on a substrate, and a method manufactures an organic light-emitting display apparatus by using such vapor deposition apparatus. The vapor deposition apparatus includes a body including an upper member and a lateral member coupled to the upper member; a receiving portion disposed to face one side of the lateral member; a stage disposed in the receiving portion and supporting the substrate; a plurality of first injection portions disposed in the lateral member and injecting at least one gas into a space between the lateral member and the upper member; a second injection portion disposed in the upper member and injecting at least one gas into the space between the lateral member and the upper member; and a plasma generating portion including a coil and a power source connected to the coil.

Abstract: A vapor deposition reactor has a configuration where a substrate or a vapor deposition reactor moves in a non-contact state with each other to allow the substrate to pass by the reactor and an injection unit and an exhaust unit are installed as a basic module of the reactor for receiving a precursor or a reactant and for receiving and pumping a purge gas, respectively. With the use of a small-size inlet for the reactor, homogeneous film properties are obtained, the deposition efficiency of precursors is improved, and an amount of time required for a purge/pumping process can be reduced. In addition, since the reactor itself is configured to reflect each step of ALD, it does not need a valve. Moreover, the reactor makes it easier for users to apply remote plasma, use super high frequencies including microwave, and UV irradiation.

Abstract: The present invention relates to a light-emitting device using a clad layer consisting of asymmetric units, wherein the clad layer is provided by repeatedly stacking a unit having an asymmetric energy bandgap on upper and lower portions of an active layer, and the inflow of both electrons and holes into the active layer is arbitrarily controlled through the clad layer, so that the internal quantum efficiency can be improved. The light-emitting device using the clad layer consisting of the asymmetric units according to the present invention is characterized in that the clad layer is provided on at least one of the upper and lower portions of the active layer and consists of one or plural units, wherein the unit has a structure in which the first to nth unit layers (n is a natural number equal to or greater than three) having different energy bandgaps are sequentially stacked and has an asymmetric energy band diagram.

Abstract: There is provided a light emitting device using a compound semiconductor, which can improve electrical characteristics and internal quantum efficiency by maximizing the recombination rate of electrons and holes in an active layer. The light emitting device using a compound semiconductor includes a substrate; a compound semiconductor layer formed on the substrate, the compound semiconductor layer comprising an active layer; and a current spreading layer formed on at least one of the top and bottom surfaces of the active layer, the current spreading layer allowing electrons or holes to be uniformly spread into the active layer.

Abstract: There is provided a method for epitaxial growth, wherein a quantum dot is formed on an epitaxial layer using a quantum-dot forming material with an excellent lattice matching property, and the formed quantum dot is positioned on a defect in the epitaxial layer, thereby minimizing transfer of the defect into an epitaxial layer formed through a subsequent process. The method includes preparing a first epitaxial layer having a defect formed therein; coating an anti-surfactant on the first epitaxial layer; supplying a quantum-dot forming material lattice-matched with respect to the first epitaxial layer, thereby forming a quantum dot obtained by allowing the anti-surfactant to react with the quantum-dot forming material on the first epitaxial layer; allowing the quantum dot to be moved onto a step of the first epitaxial layer due to a difference of surface energies between the quantum dot and the first epitaxial layer; and growing a second epitaxial layer on the first epitaxial layer.

Abstract: There are provided a method for epitaxial growth capable of securing stable optical and electrical characteristics by minimizing defects produced in a second epitaxial layer when growing the second epitaxial layer on a first epitaxial layer having defects formed therein, and an epitaxial layer structure using the method. The method includes preparing a first epitaxial layer having a defect formed therein, forming a metal quantum dot on the first epitaxial layer, allowing the metal quantum dot to be moved onto a step of the first epitaxial layer due to a difference of surface energy, converting the metal quantum dot into a metal quantum-dot semiconductor crystal having a lattice constant corresponding to that of the first epitaxial layer, and growing a second epitaxial layer on the first epitaxial layer.

Abstract: The present invention relates to a nitride semiconductor light emitting device using a hybrid buffer layer and a method for fabricating the same which can minimize the lattice mismatch between a buffer layer and a nitride semiconductor. The method for fabricating the nitride semiconductor light emitting device using the hybrid buffer layer includes a first step of forming an AlxGa1-xN(0?x<1) layer on a substrate, a second step of forming a three-dimensional crystal seed layer made of a material included in a general formula of AlxGa1-xN(0?x<1) and AlOyNz on the substrate by recrystallizing the substrate with the AlxGa1-xN(0?x<1) layer thereon, and a third step of forming an AlN nanostructure by annealing the substrate subjected to the second step at NH3 gas atmosphere, thus forming a hybrid buffer layer composed of the three-dimensional crystal seed layer and the AlN nanostructure on the substrate.

Abstract: The present invention relates to a light-emitting device using a clad layer consisting of asymmetric units, wherein the clad layer is provided by repeatedly stacking a unit having an asymmetric energy bandgap on upper and lower portions of an active layer, and the inflow of both electrons and holes into the active layer is arbitrarily controlled through the clad layer, so that the internal quantum efficiency can be improved. The light-emitting device using the clad layer consisting of the asymmetric units according to the present invention is characterized in that the clad layer is provided on at least one of the upper and lower portions of the active layer and consists of one or plural units, wherein the unit has a structure in which the first to nth unit layers (n is a natural number equal to or greater than three) having different energy bandgaps are sequentially stacked and has an asymmetric energy band diagram.

Abstract: There is provided a light emitting device using a compound semiconductor, which can improve electrical characteristics and internal quantum efficiency by maximizing the recombination rate of electrons and holes in an active layer. The light emitting device using a compound semiconductor includes a substrate; a compound semiconductor layer formed on the substrate, the compound semiconductor layer comprising an active layer; and a current spreading layer formed on at least one of the top and bottom surfaces of the active layer, the current spreading layer allowing electrons or holes to be uniformly spread into the active layer.

Abstract: There are provided a method for epitaxial growth capable of securing stable optical and electrical characteristics by minimizing defects produced in a second epitaxial layer when growing the second epitaxial layer on a first epitaxial layer having defects formed therein, and an epitaxial layer structure using the method. The method includes preparing a first epitaxial layer having a defect formed therein, forming a metal quantum dot on the first epitaxial layer, allowing the metal quantum dot to be moved onto a step of the first epitaxial layer due to a difference of surface energy, converting the metal quantum dot into a metal quantum-dot semiconductor crystal having a lattice constant corresponding to that of the first epitaxial layer, and growing a second epitaxial layer on the first epitaxial layer.

Abstract: There is provided a method for epitaxial growth, wherein a quantum dot is formed on an epitaxial layer using a quantum-dot forming material with an excellent lattice matching property, and the formed quantum dot is positioned on a defect in the epitaxial layer, thereby minimizing transfer of the defect into an epitaxial layer formed through a subsequent process. The method includes preparing a first epitaxial layer having a defect formed therein; coating an anti-surfactant on the first epitaxial layer; supplying a quantum-dot forming material lattice-matched with respect to the first epitaxial layer, thereby forming a quantum dot obtained by allowing the anti-surfactant to react with the quantum-dot forming material on the first epitaxial layer; allowing the quantum dot to be moved onto a step of the first epitaxial layer due to a difference of surface energies between the quantum dot and the first epitaxial layer; and growing a second epitaxial layer on the first epitaxial layer.

Abstract: The invention relates to a nitride semiconductor LED using a hybrid buffer layer with a minimum lattice mismatch between the buffer layer and the nitride semiconductor and a fabrication method therefor. The fabrication method of a nitride semiconductor LED using a hybrid buffer layer comprises: a first step, in which an AlxGa1-xN (0?x<1) layer is formed over a semiconductor; a second step, in which a crystalline seed layer of a 3D structure and AlOyNz are formed over the substrate, the crystalline seed layer being formed by recrystallizing the substrate with the AlxGa1-xN (0?x<1) layer formed thereover and containing a substance with a general formula of AlxGa1-xN (0?x<1); and a third step, in which the substrate having gone through the second step is subject to heat treatment under NH3 gas atmosphere to form an AlN nano structure, thus forming over the substrate a hybrid buffer layer consisting of the 3D crystalline seed layer and the AlN nano structure.

Abstract: A vapor deposition reactor has a configuration where a substrate or a vapor deposition reactor moves in a non-contact state with each other to allow the substrate to pass by the reactor and an injection unit and an exhaust unit are installed as a basic module of the reactor for receiving a precursor or a reactant and for receiving and pumping a purge gas, respectively. With the use of a small-size inlet for the reactor, homogeneous film properties are obtained, the deposition efficiency of precursors is improved, and an amount of time required for a purge/pumping process can be reduced. In addition, since the reactor itself is configured to reflect each step of ALD, it does not need a valve. Moreover, the reactor makes it easier for users to apply remote plasma, use super high frequencies including microwave, and UV irradiation.

Abstract: Quantum dot infrared detection device and method for fabricating the same, which is a new concept of detection device in which quantum dots in the quantum dot part having a stack of alternative quantum dots and separating layers are doped with impurities, so that the quantum dot part itself absorbs infrared ray and serves as a channel for transferring electrons generated by the infrared ray absorption, for enhancing device performance and a device uniformity, and simplifying a device structure and a device fabrication process.