Abstract: A metal nitride layer is formed on a substrate by exposing the substrate to a mixture including a nitrogen-containing organometallic gas and a hydrogen plasma to form a metal nitride layer on the substrate. The nitrogen-containing organometallic gas may comprise penta dimethyl amido tantalum (Ta(N(CH.sub.3).sub.2).sub.5, and the metal nitride layer may be formed by exposing comprises the step of exposing the substrate to a mixture including penta dimethyl amido tantalum gas (Ta(N(CH.sub.3).sub.2).sub.5 and a hydrogen plasma at a temperature greater than 300.degree. C., more preferably, at a temperature of 300.degree. C. to 750.degree. C. and a pressure of 0.5 torr to 1.5 torr. The penta dimethyl amido tantalum gas (Ta(N(CH.sub.3).sub.2).sub.5 is preferably provided to a chamber in which the substrate is placed at a mass flow rate of 50 sccm to 150 sccm, and the hydrogen plasma referably provided to the chamber at a mass flow rate of 30 sccm to 100 sccm.