Abstract: Methods form structures that include (among other components) semiconductor fins extending from a substrate, gate insulators contacting channel regions of the semiconductor fins, and gate conductors positioned adjacent the channel regions and contacting the gate insulators. Additionally, epitaxial source/drain material contacts the semiconductor fins on opposite sides of the channel regions, and source/drain conductive contacts contact the epitaxial source/drain material. Also, first insulating spacers are on the gate conductors. The gate conductors are linear conductors perpendicular to the semiconductor fins, and the first insulating spacers are on both sides of the gate conductors. Further, second insulating spacers are on the first insulating spacers; however, the second insulating spacers are only on the first insulating spacers in locations between where the gate conductors intersect the semiconductor fins.

Abstract: Semiconductor structures and methods of forming semiconductor structures. Trench isolation regions arranged to surround an active device region The trench isolation regions extend through a device layer and a buried oxide layer of a silicon-on-insulator wafer into a substrate of the silicon-on-insulator wafer. A well is arranged in the substrate outside of the trench isolation regions, and a doped region is arranged in a portion of the substrate. The doped region is arranged in a portion of the substrate that is located in a horizontal direction adjacent to one of the trench isolation regions and in a vertical direction adjacent to the buried oxide layer. The doped region and the well have the same conductivity type.

Abstract: An integrated circuit included in a device for performing a neural network operation includes a buffer configured to store feature map data in units of cells each including at least one feature, wherein the feature map data is for use in the neural network operation; and a multiplexing circuit configured to receive the feature map data from the buffer, and output extracted data by extracting feature data of one of features that are included within a plurality of cells in the received feature map data, the features each corresponding to an identical coordinate value.

Abstract: Methods form devices by patterning a lower layer to form a fin, and forming a sacrificial gate along sidewalls of the fin. Such methods form a mask with cut openings on the sacrificial gate and remove sections of the fin and the sacrificial gate exposed through the cut openings to divide the fin into fin portions and create cut areas between the fin portions. Additionally, these methods remove the mask, epitaxially grow source/drains in the cut areas, replace the sacrificial gate with a gate conductor, and form a gate contact on the gate conductor over a center of the fin portions.

Abstract: In various embodiments, a metamaterial structure antenna may comprise: a feed line for feeding a signal; a ground plane comprising a cross-shaped aperture forming circular polarization on the basis of a magnetic field induced by the fed signal; and a patch plane formed parallel to the ground plane which emits electromagnetic waves on the basis of the circular polarization.

Abstract: Methods form devices by patterning a lower layer to form a fin, and forming a sacrificial gate along sidewalls of the fin. Such methods form a mask with cut openings on the sacrificial gate and remove sections of the fin and the sacrificial gate exposed through the cut openings to divide the fin into fin portions and create cut areas between the fin portions. Additionally, these methods remove the mask, epitaxially grow source/drains in the cut areas, replace the sacrificial gate with a gate conductor, and form a gate contact on the gate conductor over a center of the fin portions.

Abstract: Semiconductor structures and methods of forming semiconductor structures. Trench isolation regions arranged to surround an active device region The trench isolation regions extend through a device layer and a buried oxide layer of a silicon-on-insulator wafer into a substrate of the silicon-on-insulator wafer. A well is arranged in the substrate outside of the trench isolation regions, and a doped region is arranged in a portion of the substrate. The doped region is arranged in a portion of the substrate that is located in a horizontal direction adjacent to one of the trench isolation regions and in a vertical direction adjacent to the buried oxide layer. The doped region and the well have the same conductivity type.

Abstract: A semiconductor device includes a first intellectual property block (IP block) which includes a function unit and an interface unit; a first clock control circuit which controls a first clock source; a second clock control circuit which transmits a first clock request to the first clock control circuit, and controls a second clock source which receives a clock signal from the first clock source; and a channel management circuit configured to transmit a second clock request to the second clock control circuit in response to a clock stop request received from the first IP block; wherein the function unit controls an operation of the first IP block, and the interface unit receives a first signal provided from a second IP block electrically connected to the first IP block and provides the first signal to the function unit.

Abstract: In one embodiment, the clock management circuitry includes a first master clock controller configured to provide a first command to a first slave clock controller via a first channel based on a received first clock request. The clock management circuitry also includes the first slave clock controller configured to control outputting a first clock signal based on the first command.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to scaled memory structures with middle of the line cuts and methods of manufacture The structure comprises: a plurality of fin structures formed on a substrate; a plurality of gate structures spanning over adjacent fin structures; a cut in adjacent epitaxial source/drain regions; and a cut in contact material formed adjacent to the plurality of gate structures, which provides separate contacts.

Abstract: A system-on-chip (SoC) comprises a clock management unit (CMU) including a first clock generator and a second clock generator, the first and second clock generators being configured to generate clock signals. The SoC comprises at least one logic block configured to request the clock signals from the CMU according to a full handshake method and receive the clock signals from the CMU in response to the request. The first clock generator and the second clock generator are configured to communicate according to the full handshake method.

Abstract: In one embodiment, the clock management circuitry includes a first master clock controller configured to provide a first command to a first slave clock controller via a first channel based on a received first clock request. The clock management circuitry also includes the first slave clock controller configured to control outputting a first clock signal based on the first command.

Abstract: A clock generation circuit having a deskew function and a semiconductor integrated circuit device including the same are provided. The clock generation circuit includes a clock gating circuit configured to gate an input clock signal based on a first waveform signal to generate a first output signal, a flip-flop configured to receive the input clock signal and a second waveform signal and to generate a second output signal, and an OR circuit configured to perform an OR operation on the first output signal and the second output signal to generate an output clock signal having a period which is N times a period of the input clock signal.

Abstract: A semiconductor device includes a first clock control circuit for controlling a first clock source; a second clock control circuit for sending a first clock request to the first clock control circuit in response to a block clock request from an intellectual property (IP) block, and controlling a second clock source, which receives a clock signal from the first clock source, to generate a stopped clock signal, which is a clock signal turned off for a predetermined amount of time; and a driver circuit for receiving a block control signal, and outputting the block control signal to the IP block while the short stopped clock signal is output to the IP block.

Abstract: A system on chip (SoC) includes a plurality of intellectual property (IP) blocks and a clock management unit (CMU) configured to perform clock gating on at least one of the IP blocks. The IP blocks and the CMU interface with one another using a full handshake method. The full handshake method may include at least one of the IP blocks sending a request signal to the CMU to begin providing a clock signal or to stop providing the clock signal, and the CMU sending an acknowledgement signal to the corresponding IP block in response to receipt of the request signal.

Abstract: Methods form structures that include (among other components) semiconductor fins extending from a substrate, gate insulators contacting channel regions of the semiconductor fins, and gate conductors positioned adjacent the channel regions and contacting the gate insulators. Additionally, epitaxial source/drain material contacts the semiconductor fins on opposite sides of the channel regions, and source/drain conductive contacts contact the epitaxial source/drain material. Also, first insulating spacers are on the gate conductors. The gate conductors are linear conductors perpendicular to the semiconductor fins, and the first insulating spacers are on both sides of the gate conductors. Further, second insulating spacers are on the first insulating spacers; however, the second insulating spacers are only on the first insulating spacers in locations between where the gate conductors intersect the semiconductor fins.

Abstract: A semiconductor device includes a first control circuit controlling a first child clock source to receive a clock signal from a parent clock source, a first channel management (CM) circuit transmitting a first clock request to the first control circuit in response to a second clock request received from a first IP block, a second control circuit controlling a second child clock source to receive the clock signal from the parent clock source, a second CM circuit transmitting a third clock request to the second control circuit in response to a fourth clock request received from a second IP block, and a power management unit transmitting a power control command to the first CM circuit and the second CM circuit to control a power state of the first IP block and the second IP block. The first CM circuit and the second exchange signals to maintain a master-slave relationship.

Abstract: A clock generation circuit having a deskew function and a semiconductor integrated circuit device including the same are provided. The clock generation circuit includes a clock gating circuit configured to gate an input clock signal based on a first waveform signal to generate a first output signal, a flip-flop configured to receive the input clock signal and a second waveform signal and to generate a second output signal, and an OR circuit configured to perform an OR operation on the first output signal and the second output signal to generate an output clock signal having a period which is N times a period of the input clock signal.

Abstract: A system-on-chip (SoC) comprises a clock management unit (CMU) including a first clock generator and a second clock generator, the first and second clock generators being configured to generate clock signals. The SoC comprises at least one logic block configured to request the clock signals from the CMU according to a full handshake method and receive the clock signals from the CMU in response to the request. The first clock generator and the second clock generator are configured to communicate according to the full handshake method.

Abstract: A method of page size aware scheduling and a non-transitory computer-readable storage medium having recorded thereon a computer program for executing the method of page size aware scheduling are provided. The method includes determining a size of a media page; determining if the media page is open or closed; performing, by a memory controller, a speculative read operation if the media page is determined to be open; and performing, by the memory controller, a regular read operation if the media page is determined to be closed.