Abstract: According to some aspects of the disclosure, an organic light-emitting display device including a display panel including a driving thin film transistor (TFT), comprises a sensing unit configured to perform a sensing operation for external compensation of the display panel, and an analog-digital converter (ADC) configured to perform a conversion operation of converting an analog value held in the sensing unit into a digital value, wherein the sensing unit comprises a basic sensing unit configured to perform a sensing operation on the driving TFT, and a dummy sensing unit configured to perform a sensing operation on changes in a gain and an offset of the ADC, and the basic sensing unit and the dummy sensing unit are in a cascade connection to each other.

Abstract: Integrated circuit devices and methods of forming the same are provided. The methods may include forming a sacrificial layer in a preliminary substrate by adding an element into the preliminary substrate, forming a transistor structure on the preliminary substrate, the transistor structure including a source/drain region, replacing the sacrificial layer with a power contact that comprises an upper surface contacting the source/drain region, and forming a power rail that contacts a lower surface of the power contact.

Abstract: Provided is a jetting driver that can be used for various types of heads with minimal changes. The jetting driver includes: an image board receiving raw image data and generating image data by transforming the raw image data into a form suitable for a type of heads used; and an interface board physically separated from the image board, receiving the image data, and transmitting the image data to the heads through a plurality of channels.

Abstract: The present invention relates to a thiobenzimidazole derivative or a pharmaceutically acceptable salt thereof, and a composition for preventing or treating cancer, comprising the derivative as an active ingredient. The thiobenzimidazole derivative of the present invention exhibits cell toxicity by blocking the cell cycle of a cancer cell and inducing apoptosis when administered to an individual, as the derivative inhibits tubulin polymerization by being activated in the cancer cell, and, thus, the derivative can be used for prevention or treatment of cancer, desirably for prevention or treatment of triple-negative breast cancer.

Abstract: A data processing method includes selecting, as a codeword, a vector from among a plural vectors, the vector including multiple elements and having a predetermined size, generating a helper matrix by using the codeword and real number data that corresponds to biometric information, and outputting helper matrix.

Abstract: A method of fabricating a semiconductor memory device includes etching a substrate that forms a trench that crosses active regions of the substrate, forming a gate insulating layer on bottom and side surfaces of the trench, forming a first gate electrode on the gate insulating layer that fills a lower portion of the trench, oxidizing a top surface of the first gate electrode where a preliminary barrier layer is formed, nitrifying the preliminary barrier layer where a barrier layer is formed, and forming a second gate electrode on the barrier layer that fills an upper portion of the trench.

Abstract: A method of fabricating a semiconductor memory device includes etching a substrate that forms a trench that crosses active regions of the substrate, forming a gate insulating layer on bottom and side surfaces of the trench, forming a first gate electrode on the gate insulating layer that fills a lower portion of the trench, oxidizing a top surface of the first gate electrode where a preliminary barrier layer is formed, nitrifying the preliminary barrier layer where a barrier layer is formed, and forming a second gate electrode on the barrier layer that fills an upper portion of the trench.

Abstract: A method of fabricating a semiconductor memory device includes etching a substrate that forms a trench that crosses active regions of the substrate, forming a gate insulating layer on bottom and side surfaces of the trench, forming a first gate electrode on the gate insulating layer that fills a lower portion of the trench, oxidizing a top surface of the first gate electrode where a preliminary barrier layer is formed, nitrifying the preliminary barrier layer where a barrier layer is formed, and forming a second gate electrode on the barrier layer that fills an upper portion of the trench.

Abstract: A method of fabricating a semiconductor memory device includes etching a substrate that forms a trench that crosses active regions of the substrate, forming a gate insulating layer on bottom and side surfaces of the trench, forming a first gate electrode on the gate insulating layer that fills a lower portion of the trench, oxidizing a top surface of the first gate electrode where a preliminary barrier layer is formed, nitrifying the preliminary barrier layer where a barrier layer is formed, and forming a second gate electrode on the barrier layer that fills an upper portion of the trench.

Abstract: A method of fabricating a semiconductor memory device includes etching a substrate that forms a trench that crosses active regions of the substrate, forming a gate insulating layer on bottom and side surfaces of the trench, forming a first gate electrode on the gate insulating layer that fills a lower portion of the trench, oxidizing a top surface of the first gate electrode where a preliminary barrier layer is formed, nitrifying the preliminary barrier layer where a barrier layer is formed, and forming a second gate electrode on the barrier layer that fills an upper portion of the trench.

Abstract: A method of fabricating a semiconductor memory device includes etching a substrate that forms a trench that crosses active regions of the substrate, forming a gate insulating layer on bottom and side surfaces of the trench, forming a first gate electrode on the gate insulating layer that fills a lower portion of the trench, oxidizing a top surface of the first gate electrode where a preliminary barrier layer is formed, nitrifying the preliminary barrier layer where a barrier layer is formed, and forming a second gate electrode on the barrier layer that fills an upper portion of the trench.

Abstract: This invention relates to a complex for cancer cell chemotherapy and, more particularly, to an AGTR1 aptamer-anticancer drug complex for chemotherapy of cancer cells, which includes a nucleic acid aptamer specifically binding to AGTR1 and an anticancer drug linked with the nucleic acid aptamer, so that AGTR1-positive (overexpressed) breast cancer cells are selectively targeted and killed.

Abstract: A method of manufacturing a complex for cancer cell chemotherapy comprises an aptamer preparation step of preparing a nucleic acid aptamer having an aptamer base sequence specifically binding to HER2, and a complex formation step of forming an aptamer-anticancer drug complex by reacting the aptamer prepared in the aptamer preparation step with an anticancer drug.

Abstract: This invention relates to a complex for cancer cell chemotherapy and, more particularly, to an AGTR1 aptamer-anticancer drug complex for chemotherapy of cancer cells, which includes a nucleic acid aptamer specifically binding to AGTR1 and an anticancer drug linked with the nucleic acid aptamer, so that AGTR1-positive (overexpressed) breast cancer cells are selectively targeted and killed.

Abstract: This invention relates to a complex for cancer cell chemotherapy and, more particularly, to a HER2 aptamer-anticancer drug complex for chemotherapy of cancer cells, which includes a nucleic acid aptamer specifically binding to HER2 and an anticancer drug linked with the nucleic acid aptamer, so that HER2-positive breast cancer cells are selectively targeted and killed.

Abstract: A method of manufacturing a complex for cancer cell chemotherapy comprises an aptamer preparation step of preparing a nucleic acid aptamer having an aptamer base sequence specifically binding to HER2, and a complex formation step of forming an aptamer-anticancer drug complex by reacting the aptamer prepared in the aptamer preparation step with an anticancer drug.

Abstract: This invention relates to a complex for cancer cell chemotherapy and, more particularly, to a HER2 aptamer-anticancer drug complex for chemotherapy of cancer cells, which includes a nucleic acid aptamer specifically binding to HER2 and an anticancer drug linked with the nucleic acid aptamer, so that HER2-positive breast cancer cells are selectively targeted and killed.

Abstract: A super-slim touch keyboard and a super-slim smart cover device including the same are provided. The super-slim touch keyboard includes a lower case, a touch circuit board including a key pattern disposed on the lower case and a touch wheel pattern disposed adjacent to the key pattern, a piezoelectric sensor film layer formed on the touch circuit board and including a piezoelectric sensor printed on a portion thereof corresponding to the key pattern, an electro-luminance (EL) film layer formed on the piezoelectric sensor film layer, a keypad layer formed on the EL film layer and including a plurality of keys at a portion thereof corresponding to the key pattern, and an upper case disposed to be coupled to the lower case at a periphery of the keypad layer and including a touch wheel at a portion thereof corresponding to the touch wheel pattern.

Abstract: A super-slim touch keyboard and a super-slim smart cover device including the same are provided. The super-slim touch keyboard includes a lower case, a touch circuit board including a key pattern disposed on the lower case and a touch wheel pattern disposed adjacent to the key pattern, a piezoelectric sensor film layer formed on the touch circuit board and including a piezoelectric sensor printed on a portion thereof corresponding to the key pattern, an electro-luminance (EL) film layer formed on the piezoelectric sensor film layer, a keypad layer formed on the EL film layer and including a plurality of keys at a portion thereof corresponding to the key pattern, and an upper case disposed to be coupled to the lower case at a periphery of the keypad layer and including a touch wheel at a portion thereof corresponding to the touch wheel pattern.

Abstract: A semiconductor device includes a substrate having a conductive area, a first pattern formed on the substrate and having a contact hole through which the conductive area is exposed, and a contact plug in the contact hole. The contact plug includes first and second silicon layers. The first silicon layer, formed from a first compound including at least two silicon atoms, is formed in the contact hole to contact a top surface of the conductive area and a side wall of the first pattern. The second silicon layer, formed from a second compound including a number of silicon atoms less than the number of the silicon atoms of the first compound, is formed on the first silicon layer and fills a remaining space of the contact hole, the second silicon layer being spaced apart from the first pattern at an entrance of the contact hole.