Abstract: The present technology relates to an electronic system including a host and a memory system. The host includes a request merge manager configured to generate one or more operation request sets, a first request set queue configured to store one or more of transmission request sets and operation request sets, a first scheduler configured to control the priorities of the operation request sets and the transmission request sets, a second request set queue configured to store the operation request sets sequentially output from the first request set queue, a second scheduler configured to generate a transmission request set, and a request set detector configured to transmit, to the first scheduler, request information on a request set having a highest priority.

Abstract: A semiconductor memory device includes a stack structure comprising a plurality of layers vertically stacked on a substrate, each layer including a semiconductor pattern, a gate electrode extending in a first direction on the semiconductor pattern, and a data storage element electrically connected to the semiconductor pattern, a plurality of vertical insulators penetrating the stack structure, the vertical insulators arranged in the first direction, and a bit line provided at a side of the stack structure and extending vertically. The bit line electrically connects the semiconductor patterns which are stacked. Each of the vertical insulators includes first and second vertical insulators adjacent to each other. The gate electrode includes a connection portion disposed between the first and second vertical insulators.

Abstract: A display device includes: a first pixel region, a second pixel region, and a third pixel region that are adjacent to each other in a plan view; a display panel including a first light emitting element overlapping with the first pixel region, a second light emitting element overlapping with the second pixel region, and a third light emitting element overlapping with the third pixel region; and a refractive index control layer including a first refractive index control part corresponding to the first light emitting element, and a second refractive index control part corresponding to the second light emitting element. The first refractive index control part and the second refractive index control part have different refractive indices from each other.

Abstract: An inkjet printing apparatus may include a stage on which a substrate is seated; a nozzle part disposed above the stage and spraying an ink onto the substrate, the ink containing a solvent and solid substances; and a head part that supplies the ink to the nozzle part. The nozzle part includes an internal flow path extended in a first direction, through which the ink is supplied from the head prat; and an inlet in which an entrance area is defined. The ink is introduced in a second direction intersecting the first direction from the internal flow path through the entrance area. The inlet includes an inclined surface adjacent to the entrance area and defining the entrance area; and a flat surface parallel to the first direction. An angle between the inclined surface and the flat surface is an acute angle.

Abstract: A manufacturing method of a semiconductor device, includes providing a substrate; forming a stacked gate, including a floating gate and a control gate, on the substrate; forming a stacked gate by a deposition of a select gate conductive layer on the stacked gate; forming a trench in the stacked gate by etching the stacked gate to separate a first select gate pattern and a second select gate pattern; and forming a first select gate, a second select gate, a first transistor, and a second transistor simultaneously through an etch-back process of the stacked gate

Abstract: Embodiments of the present disclosure provide systems and methods for perspective shifting in a video conferencing session. In one exemplary method, a video stream may be generated. A foreground element may be identified in a frame of the video stream and distinguished from a background element of the frame. Data may be received representing a viewing condition at a terminal that will display the generated video stream. The frame of the video stream may be modified based on the received data to shift of the foreground element relative to the background element. The modified video stream may be displayed at the displaying terminal.

Abstract: Techniques are disclosed for coding video data predictively based on predictions made from spherical-domain projections of input pictures to be coded and reference pictures that are prediction candidates. Spherical projection of an input picture and the candidate reference pictures may be generated. Thereafter, a search may be conducted for a match between the spherical-domain representation of a pixel block to be coded and a spherical-domain representation of the reference picture. On a match, an offset may be determined between the spherical-domain representation of the pixel block to a matching portion of the of the reference picture in the spherical-domain representation. The spherical-domain offset may be transformed to a motion vector in a source-domain representation of the input picture, and the pixel block may be coded predictively with reference to a source-domain representation of the matching portion of the reference picture.

Abstract: A method for clustering based on unsupervised learning according to an embodiment of the invention enables clustering for newly generated patterns and is robust against noise, and does not require tagging for training data. According to one or more embodiments, noise is accurately removed using three-dimensional stacked spatial auto-correlation, and multivariate spatial probability distribution values and polar coordinate system spatial probability distribution values are used as learning features for clustering model generation, making them robust to noise, rotation, and fine unusual shapes. In addition, clusters resulting from clustering are classified into multi-level clusters, and stochastic automatic evaluation of normal/defect clusters is possible only with measurement data without a label.

Abstract: A laminated polyester film according to the present invention comprises: a core layer; and a sub-layer laminated on at least one surface of the core layer and containing a first particle and a second particle which are different components, wherein an average diameter of the first particle is 6 to 20 times of an average diameter of the second particle. Types, different properties, sizes, and contents of the first particle and the second particle are adjusted to solve the image blurring phenomenon and prevent a winding fault generated during processing and winding a final product. Therefore, workability and perfection of a final product can be increased and the defect rate can be decreased.

Abstract: Provided is a hypertube transport system. Specifically, provided are a magnetically-levitated train and an infrastructure-system in which same travels, comprising: refrigerant for cooling compressed air of a hypertube train, and a compressed air cooling system utilizing the refrigerant; an apparatus and method for controlling trains operating in a vacuum tube; superconducting switches for superconducting magnets for magnetic levitation; a driving stability apparatus for the hypertube transport system; a control apparatus for trains of the hypertube transport system; and an energy harvester.

Abstract: A non-oriented electrical steel sheet according to an exemplary embodiment of the present invention includes at least one of 2.0 to 3.5% of Si, 0.3 to 3.5% of Al, 0.2 to 4.5% of Mn, 0.0030 to 0.2% of Sn, 0.0030 to 0.15% of Sb, 0.0040 to 0.18% of P, 0.0005 to 0.02% of Zn, and 0.0005 to 0.01% of Y for wt %, a remainder of Fe, and inevitable impurities, and satisfying Formula 1: 0.05?([Sn]+[Sb])/[P]?25??[Formula 1] (here, [Sn], [Sb], and [P] represent contents (wt %) of Sn, Sb, and P.

Abstract: A manufacturing method of a semiconductor device, includes providing a substrate; forming a stacked gate, including a floating gate and a control gate, on the substrate; forming a stacked gate by a deposition of a select gate conductive layer on the stacked gate; forming a trench in the stacked gate by etching the stacked gate to separate a first select gate pattern and a second select gate pattern; and forming a first select gate, a second select gate, a first transistor, and a second transistor simultaneously through an etch-back process of the stacked gate.

Abstract: A semiconductor memory device may include a bit line extending in a first direction, a first conductive pattern extending in a second direction intersecting the first direction, a semiconductor pattern connecting the bit line and the first conductive pattern, a second conductive pattern including an insertion portion in the first conductive pattern, and a dielectric layer between the first conductive pattern and the second conductive pattern. The insertion portion of the second conductive pattern may have a width which increases as a distance from the semiconductor pattern increases.

Abstract: In communication applications, aggregate source image data at a transmitter exceeds the data that is needed to display a rendering of a viewport at a receiver. Improved streaming techniques that include estimating a location of a viewport at a future time. According to such techniques, the viewport may represent a portion of an image from a multi-directional video to be displayed at the future time, and tile(s) of the image may be identified in which the viewport is estimated to be located. In these techniques, the image data of tile(s) in which the viewport is estimated to be located may be requested at a first service tier, and the other tile in which the viewport is not estimated to be located may be requested at a second service tier, lower than the first service tier.

Abstract: A display device includes a substrate; a via insulating layer on the substrate; and a first inner bank and a second inner bank on the via insulating layer and spaced from each other, wherein the via insulating layer includes a protruding portion located in a gap between the first inner bank and the second inner bank, and protruding from a top surface of the via insulating layer, and a thickness of the protruding portion is less than a thickness of the first inner bank and a thickness of the second inner bank.

Abstract: A variable resistance memory device including a substrate; horizontal structures spaced apart from each other in a first direction perpendicular to a top surface of the substrate; variable resistance patterns on the horizontal structures, respectively; and conductive lines on the variable resistance patterns, respectively, wherein each of the horizontal structures includes a first electrode pattern, a semiconductor pattern, and a second electrode pattern arranged along a second direction parallel to the top surface of the substrate, and each of the variable resistance patterns is between one of the second electrode patterns and a corresponding one of the conductive lines.

Abstract: A display device includes a plurality of bank patterns disposed on a substrate and spaced apart from each other, a plurality of electrodes disposed on the substrate and extended parallel to each other and spaced apart from each other, an insulating layer disposed on the plurality of electrodes and the plurality of bank patterns, and a plurality of light emitting elements disposed on the insulating layer, having both ends disposed on the plurality of electrodes, wherein the plurality of bank patterns include sides facing each other, and portions of the plurality of light emitting elements are disposed on the sides of the plurality of bank patterns.

Abstract: An exterior material to be used for a battery includes a barrier layer, a first functional layer formed on one surface of the barrier layer, a second functional layer formed on the other surface of the barrier layer, and an anti-corrosion layer formed on at least one surface of the barrier layer. The first functional layer is composed of one or more resin layers including a sealing layer, and the second functional layer has a greater thickness than the barrier layer and has a thickness of 33% or more of the total thickness of the exterior material.

Abstract: A multilayer electronic component may include a first internal electrode layer including a first dielectric layer and first to fourth internal electrodes disposed to be spaced apart from each other on the first dielectric layer, a second internal electrode layer including a second dielectric layer and a fifth internal electrode disposed on the second dielectric layer, a body including a capacitance forming portion in which the first internal electrode layer and the second internal electrode layer are alternately disposed, a connection electrode penetrating through the first and second internal electrode layers, spaced apart from the first to fourth internal electrodes, and connected to the fifth internal electrode, first to fourth external electrodes disposed to be connected to the first to fourth internal electrodes, respectively, on the body, and a fifth external electrode disposed to be connected to the connection electrode on the body.

Abstract: A method for clustering based on unsupervised learning according to an embodiment of the invention enables clustering for newly generated patterns and is robust against noise, and does not require tagging for training data. According to one or more embodiments, noise is accurately removed using three-dimensional stacked spatial auto-correlation, and multivariate spatial probability distribution values and polar coordinate system spatial probability distribution values are used as learning features for clustering model generation, making them robust to noise, rotation, and fine unusual shapes. In addition, clusters resulting from clustering are classified into multi-level clusters, and stochastic automatic evaluation of normal/defect clusters is possible only with measurement data without a label.