Patents by Inventor Jae Hun Bae
Jae Hun Bae has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20250112099Abstract: In one example, an electronic device includes a substrate including a substrate inner side, a substrate outer side opposite to the substrate inner side, substrate lateral sides connecting the substrate inner side to the substrate outer side, a dielectric structure, a conductive structure, and a substrate internal stiffener at the substrate inner side. An electronic component is coupled to the conductive structure and includes a lower side proximate to the substrate inner side, an upper side opposite to the lower side, and a lateral side connecting the lower side to the upper side. An underfill is between the lower side of the electronic component and the substrate inner side and covering the substrate internal stiffener. An encapsulant covers a portion of the substrate inner side, a portion of the underfill; and a portion of the first electronic component. Other examples and related methods are also disclosed herein.Type: ApplicationFiled: September 29, 2023Publication date: April 3, 2025Applicant: Amkor Technology Singapore Holding Pte. Ltd.Inventors: Ki Yeul YANG, Tai Hoon KIM, Sin Jae PARK, Jae Hun BAE
-
Publication number: 20250022790Abstract: In one example, a semiconductor device comprises a substrate comprising a top side and a bottom side, a dielectric structure, and a conductive structure, wherein the conductive structure comprises a first terminal exposed from the dielectric structure, an electronic component over the top side of the substrate, and an encapsulant over the top side of the substrate and covering a lateral side of the electronic component. The dielectric structure comprises a first pattern base and first pattern wall that extends from the first pattern base and is adjacent to the first terminal, and the first terminal is bounded by the first pattern wall. Other examples and related methods are also disclosed herein.Type: ApplicationFiled: September 27, 2024Publication date: January 16, 2025Applicant: Amkor Technology Singapore Holding Pte. Ltd.Inventors: George Scott, Ki Yeul Yang, Jae Hun Bae
-
Publication number: 20250006686Abstract: A semiconductor device includes a low-density substrate, a high-density patch positioned inside a cavity in the low-density substrate, a first semiconductor die, and a second semiconductor die. The first semiconductor dies includes high-density bumps and low-density bumps. The second semiconductor die includes high-density bumps and low-density bumps. The high-density bumps of the first semiconductor die and the high-density bumps of the second semiconductor die are electrically connected to the high-density patch. The low-density bumps of the first semiconductor die and the low-density bumps of the second semiconductor die are electrically connected to the low-density substrate.Type: ApplicationFiled: July 8, 2024Publication date: January 2, 2025Inventors: Jae Hun Bae, Won Chul Do, Min Yoo, Young Rae Kim, Min Hwa Chang, Dong Hyun Kim, Ah Ra Jo, Seok Geun Ahn
-
Publication number: 20240332032Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that comprises an interposer without through silicon vias.Type: ApplicationFiled: April 1, 2024Publication date: October 3, 2024Inventors: Dong Jin Kim, Jin Han Kim, Won Chul Do, Jae Hun Bae, Won Myoung Ki, Dong Hoon Han, Do Hyung Kim, Ji Hun Lee, Jun Hwan Park, Seung Nam Son, Hyun Cho, Curtis Zwenger
-
Patent number: 12107037Abstract: In one example, a semiconductor device comprises a substrate comprising a top side and a bottom side, a dielectric structure, and a conductive structure, wherein the conductive structure comprises a first terminal exposed from the dielectric structure, an electronic component over the top side of the substrate, and an encapsulant over the top side of the substrate and covering a lateral side of the electronic component. The dielectric structure comprises a first pattern base and first pattern wall that extends from the first pattern base and is adjacent to the first terminal, and the first terminal is bounded by the first pattern wall. Other examples and related methods are also disclosed herein.Type: GrantFiled: November 3, 2021Date of Patent: October 1, 2024Assignee: Amkor Technology Singapore Holding Pte. Ltd.Inventors: George Scott, Ki Yeul Yang, Jae Hun Bae
-
Patent number: 12033970Abstract: A semiconductor device includes a low-density substrate, a high-density patch positioned inside a cavity in the low-density substrate, a first semiconductor die, and a second semiconductor die. The first semiconductor dies includes high-density bumps and low-density bumps. The second semiconductor die includes high-density bumps and low-density bumps. The high-density bumps of the first semiconductor die and the high-density bumps of the second semiconductor die are electrically connected to the high-density patch. The low-density bumps of the first semiconductor die and the low-density bumps of the second semiconductor die are electrically connected to the low-density substrate.Type: GrantFiled: May 24, 2021Date of Patent: July 9, 2024Assignee: AMKOR TECHNOLOGY SINGAPORE HOLDING PTE. LTD.Inventors: Jae Hun Bae, Won Chul Do, Min Yoo, Young Rae Kim, Min Hwa Chang, Dong Hyun Kim, Ah Ra Jo, Seok Geun Ahn
-
Patent number: 11948808Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that comprises an interposer without through silicon vias.Type: GrantFiled: December 6, 2021Date of Patent: April 2, 2024Assignee: AMKOR TECHNOLOGY SINGAPORE HOLDING PTE. LTD.Inventors: Dong Jin Kim, Jin Han Kim, Won Chul Do, Jae Hun Bae, Won Myoung Ki, Dong Hoon Han, Do Hyung Kim, Ji Hun Lee, Jun Hwan Park, Seung Nam Son, Hyun Cho, Curtis Zwenger
-
Publication number: 20230137998Abstract: In one example, a semiconductor device comprises a substrate comprising a top side and a bottom side, a dielectric structure, and a conductive structure, wherein the conductive structure comprises a first terminal exposed from the dielectric structure, an electronic component over the top side of the substrate, and an encapsulant over the top side of the substrate and covering a lateral side of the electronic component. The dielectric structure comprises a first pattern base and first pattern wall that extends from the first pattern base and is adjacent to the first terminal, and the first terminal is bounded by the first pattern wall. Other examples and related methods are also disclosed herein.Type: ApplicationFiled: November 3, 2021Publication date: May 4, 2023Applicant: Amkor Technology Singapore Holding Pte. Ltd.Inventors: George Scott, Ki Yeul Yang, Jae Hun Bae
-
Publication number: 20230057803Abstract: A semiconductor device with redistribution layers on partial encapsulation is disclosed and may include providing a carrier with a non-photosensitive protection layer, forming a pattern in the non-photosensitive protection layer, providing a semiconductor die with a contact pad on a first surface, and bonding the semiconductor die to the non-photosensitive protection layer such that the contact pad aligns with the pattern formed in the non-photosensitive protection layer. A second surface opposite to the first surface of the semiconductor die, side surfaces between the first and second surfaces of the semiconductor die, and a portion of a first surface of the non-photosensitive protection layer may be encapsulated with an encapsulant. The carrier may be removed leaving the non-photosensitive protection layer bonded to the semiconductor die. A redistribution layer may be formed on the contact pad and a second surface of the non-photosensitive protection layer opposite to the first surface.Type: ApplicationFiled: August 19, 2022Publication date: February 23, 2023Inventors: Jong Sik Paek, Jin Young Kim, YoonJoo Kim, Jin Han Kim, SeungJae Lee, Se Woong Cha, SungKyu Kim, Jae Hun Bae, Dong Jin Kim, Doo Hyun Park
-
Patent number: 11424180Abstract: A semiconductor device with redistribution layers on partial encapsulation is disclosed and may include providing a carrier with a non-photosensitive protection layer, forming a pattern in the non-photosensitive protection layer, providing a semiconductor die with a contact pad on a first surface, and bonding the semiconductor die to the non-photosensitive protection layer such that the contact pad aligns with the pattern formed in the non-photosensitive protection layer. A second surface opposite to the first surface of the semiconductor die, side surfaces between the first and second surfaces of the semiconductor die, and a portion of a first surface of the non-photosensitive protection layer may be encapsulated with an encapsulant. The carrier may be removed leaving the non-photosensitive protection layer bonded to the semiconductor die. A redistribution layer may be formed on the contact pad and a second surface of the non-photosensitive protection layer opposite to the first surface.Type: GrantFiled: June 2, 2020Date of Patent: August 23, 2022Assignee: AMKOR TECHNOLOGY SINGAPORE HOLDING PTE. LTD.Inventors: Jong Sik Paek, Jin Young Kim, YoonJoo Kim, Jin Han Kim, SeungJae Lee, Se Woong Cha, SungKyu Kim, Jae Hun Bae, Dong Jin Kim, Doo Hyun Park
-
Publication number: 20220165582Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that comprises an interposer without through silicon vias.Type: ApplicationFiled: December 6, 2021Publication date: May 26, 2022Inventors: Dong Jin Kim, Jin Han Kim, Won Chul Do, Jae Hun Bae, Won Myoung Ki, Dong Hoon Han, Do Hyung Kim, Ji Hun Lee, Jun Hwan Park, Seung Nam Son, Hyun Cho, Curtis Zwenger
-
Publication number: 20210398930Abstract: A semiconductor device includes a low-density substrate, a high-density patch positioned inside a cavity in the low-density substrate, a first semiconductor die, and a second semiconductor die. The first semiconductor dies includes high-density bumps and low-density bumps. The second semiconductor die includes high-density bumps and low-density bumps. The high-density bumps of the first semiconductor die and the high-density bumps of the second semiconductor die are electrically connected to the high-density patch. The low-density bumps of the first semiconductor die and the low-density bumps of the second semiconductor die are electrically connected to the low-density substrate.Type: ApplicationFiled: May 24, 2021Publication date: December 23, 2021Inventors: Jae Hun Bae, Won Chul Do, Min Yoo, Young Rae Kim, Min Hwa Chang, Dong Hyun Kim, Ah Ra Jo, Seok Geun Ahn
-
Patent number: 11195726Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that comprises an interposer without through silicon vias.Type: GrantFiled: February 4, 2020Date of Patent: December 7, 2021Assignee: Amkor Technology Singapore Holding Pte. Ltd.Inventors: Dong Jin Kim, Jin Han Kim, Won Chul Do, Jae Hun Bae, Won Myoung Ki, Dong Hoon Han, Do Hyung Kim, Ji Hun Lee, Jun Hwan Park, Seung Nam Son, Hyun Cho, Curtis Zwenger
-
Patent number: 11018107Abstract: A semiconductor device includes a low-density substrate, a high-density patch positioned inside a cavity in the low-density substrate, a first semiconductor die, and a second semiconductor die. The first semiconductor dies includes high-density bumps and low-density bumps. The second semiconductor die includes high-density bumps and low-density bumps. The high-density bumps of the first semiconductor die and the high-density bumps of the second semiconductor die are electrically connected to the high-density patch. The low-density bumps of the first semiconductor die and the low-density bumps of the second semiconductor die are electrically connected to the low-density substrate.Type: GrantFiled: May 20, 2019Date of Patent: May 25, 2021Assignee: Amkor Technology Singapore Holding Pte. Ltd.Inventors: Jae Hun Bae, Won Chul Do, Min Yoo, Young Rae Kim, Min Hwa Chang, Dong Hyun Kim, Ah Ra Jo, Seok Geun Ahn
-
Publication number: 20200365504Abstract: A semiconductor device with redistribution layers on partial encapsulation is disclosed and may include providing a carrier with a non-photosensitive protection layer, forming a pattern in the non-photosensitive protection layer, providing a semiconductor die with a contact pad on a first surface, and bonding the semiconductor die to the non-photosensitive protection layer such that the contact pad aligns with the pattern formed in the non-photosensitive protection layer. A second surface opposite to the first surface of the semiconductor die, side surfaces between the first and second surfaces of the semiconductor die, and a portion of a first surface of the non-photosensitive protection layer may be encapsulated with an encapsulant. The carrier may be removed leaving the non-photosensitive protection layer bonded to the semiconductor die. A redistribution layer may be formed on the contact pad and a second surface of the non-photosensitive protection layer opposite to the first surface.Type: ApplicationFiled: June 2, 2020Publication date: November 19, 2020Inventors: Jong Sik Paek, Jin Young Kim, YoonJoo Kim, Jin Han Kim, SeungJae Lee, Se Woong Cha, SungKyu Kim, Jae Hun Bae, Dong Jin Kim, Doo Hyun Park
-
Publication number: 20200321222Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that comprises an interposer without through silicon vias.Type: ApplicationFiled: February 4, 2020Publication date: October 8, 2020Inventors: Dong Jin Kim, Jin Han Kim, Won Chul Do, Jae Hun Bae, Won Myoung Ki, Dong Hoon Han, Do Hyung Kim, Ji Hun Lee, Jun Hwan Park, Seung Nam Son, Hyun Cho, Curtis Zwenger
-
Patent number: 10672699Abstract: A semiconductor device with redistribution layers on partial encapsulation is disclosed and may include providing a carrier with a non-photosensitive protection layer, forming a pattern in the non-photosensitive protection layer, providing a semiconductor die with a contact pad on a first surface, and bonding the semiconductor die to the non-photosensitive protection layer such that the contact pad aligns with the pattern formed in the non-photosensitive protection layer. A second surface opposite to the first surface of the semiconductor die, side surfaces between the first and second surfaces of the semiconductor die, and a portion of a first surface of the non-photosensitive protection layer may be encapsulated with an encapsulant. The carrier may be removed leaving the non-photosensitive protection layer bonded to the semiconductor die. A redistribution layer may be formed on the contact pad and a second surface of the non-photosensitive protection layer opposite to the first surface.Type: GrantFiled: January 29, 2019Date of Patent: June 2, 2020Assignee: AMKOR TECHNOLOGY, INC.Inventors: Jong Sik Paek, Jin Young Kim, YoonJoo Kim, Jin Han Kim, SeungJae Lee, Se Woong Cha, SungKyu Kim, Jae Hun Bae, Dong Jin Kim, Doo Hyun Park
-
Publication number: 20200051944Abstract: A semiconductor device includes a low-density substrate, a high-density patch positioned inside a cavity in the low-density substrate, a first semiconductor die, and a second semiconductor die. The first semiconductor dies includes high-density bumps and low-density bumps. The second semiconductor die includes high-density bumps and low-density bumps. The high-density bumps of the first semiconductor die and the high-density bumps of the second semiconductor die are electrically connected to the high-density patch. The low-density bumps of the first semiconductor die and the low-density bumps of the second semiconductor die are electrically connected to the low-density substrate.Type: ApplicationFiled: May 20, 2019Publication date: February 13, 2020Inventors: Jae Hun Bae, Won Chul Do, Min Yoo, Young Rae Kim, Min Hwa Chang, Dong Hyun Kim, Ah Ra Jo, Seok Geun Ahn
-
Patent number: 10553451Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that comprises an interposer without through silicon vias.Type: GrantFiled: June 25, 2018Date of Patent: February 4, 2020Assignee: Amkor Technology, Inc.Inventors: Dong Jin Kim, Jin Han Kim, Won Chul Do, Jae Hun Bae, Won Myoung Ki, Dong Hoon Han, Do Hyung Kim, Ji Hun Lee, Jun Hwan Park, Seung Nam Son, Hyun Cho, Curtis Zwenger
-
Publication number: 20190229050Abstract: A semiconductor device with redistribution layers on partial encapsulation is disclosed and may include providing a carrier with a non-photosensitive protection layer, forming a pattern in the non-photosensitive protection layer, providing a semiconductor die with a contact pad on a first surface, and bonding the semiconductor die to the non-photosensitive protection layer such that the contact pad aligns with the pattern formed in the non-photosensitive protection layer. A second surface opposite to the first surface of the semiconductor die, side surfaces between the first and second surfaces of the semiconductor die, and a portion of a first surface of the non-photosensitive protection layer may be encapsulated with an encapsulant. The carrier may be removed leaving the non-photosensitive protection layer bonded to the semiconductor die. A redistribution layer may be formed on the contact pad and a second surface of the non-photosensitive protection layer opposite to the first surface.Type: ApplicationFiled: January 29, 2019Publication date: July 25, 2019Inventors: Jong Sik Paek, Jin Young Kim, YoonJoo Kim, Jin Han Kim, SeungJae Lee, Se Woong Cha, SungKyu Kim, Jae Hun Bae, Dong Jin Kim, Doo Hyun Park