Abstract: The present disclosure relates to a continuous production method of a diester-based material in a continuous production process comprising a reaction part in which a total of N reaction units from a first reaction unit to an N-th reaction unit are connected in series. The method comprising the step of feeding dicarboxylic acid and a primary alcohol, wherein the feed of the primary alcohol is divided into front-end feed of being fed into a first reaction unit and rear-end feed of being fed into one or more reaction units selected among from a second reaction unit to an N-th reaction unit, wherein the amount of the rear-end feed is 5 to 80 wt % based on the total feed amount of the primary alcohol into a reaction part, and the N is an integer of 3 to 6.

Abstract: The present invention provides an apparatus for treating a substrate, the apparatus including: a head unit including a head formed with one or more nozzles that discharge a treatment liquid to a substrate; and a head maintenance unit configured to perform maintenance for the head, in which the head maintenance unit may include: a liquid receiving block formed with one or more liquid receiving parts having liquid receiving spaces with open tops; a decompression line fluidly-communicating with the liquid receiving space and configured to provide reduced pressure to the liquid receiving space; and a decompression valve installed in the decompression line.

Abstract: The present invention relates to a composition for preventing, improving or treating intestinal dysfunction, including an enzyme-degraded product of bamboo shoots or a fermented product of bamboo shoots as an active ingredient. Accordingly, the pharmaceutical composition or the food composition of the present invention is effective for preventing or treating intestinal dysfunction such as constipation, etc., and includes a plant-derived component which minimizes adverse effects on the human body.

Abstract: A semiconductor device disclosed in an embodiment comprises: a light emitting unit comprising a light emitting structure layer which has a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; and a sensor unit disposed on the light emitting unit, wherein the sensor unit comprises: a sensing material changing in resistance with light emitted by the light emitting unit; a first sensor electrode comprising a first pad portion and a first extension part extending from the first pad portion and contacting the sensing material; and a second sensor electrode comprising a first pad portion and a second extension part extending toward the first extension part from the second pad portion and contacting the sensing material. The sensor unit senses an external gas in response to the light generated from the light emitting unit.

Abstract: An apparatus for compensating a channel based on an artificial neural network includes a channel learning device that learns a property of the channel, and a channel compensating device that compensates for an error of the channel based on a learning result of the channel learning device.

Abstract: A rice milk according to an embodiment of the present invention includes a mixture of rice protein powder and rice enzyme digestion extract concentrate in purified water. The rice milk using rice protein is suitable for allergy-sensitive elderly and infants to drink and also provides functionality to stressed adults because it has milk properties, high nutritional value and good digestion by mixing rice enzyme decomposition extract obtained by digesting rice starch and rice protein with subsidiary ingredients. In addition a method for preparing a rice milk using rice protein according to an embodiment of the present invention includes a first enzymatic digestion step, a second enzymatic digestion step, a filtration step, a rice protein powdering step, and a rice enzyme extract saccharification solution concentration step.

Abstract: A semiconductor device includes a first fin type pattern in a first region of a substrate. The first fin type pattern includes a plurality of spaced-apart fins having respective sidewalls defined by a first trench. A first gate structure is provided, which intersects the first fin type pattern. A second fin type pattern is provided in a second region of a substrate. The second fin type pattern includes a fin having a sidewall defined by a second trench. A second gate structure is provided, which intersects the second fin type pattern. A field insulating film fills at least a part of the first trench and at least a part of the second trench.

Abstract: A substrate treatment apparatus is provided. The substrate treatment apparatus includes a substrate support part provided with a seating surface and configured to support a substrate, a guide ring annularly disposed along an edge of the substrate support part to surround the substrate, and a centering part provided inside the guide ring and configured to center the substrate by moving in a direction parallel to the seating surface to pressurize the edge of the substrate.

Abstract: The present invention relates to a composition for preventing, improving or treating intestinal dysfunction, including an enzyme-degraded product of bamboo shoots or a fermented product of bamboo shoots as an active ingredient. Accordingly, the pharmaceutical composition or the food composition of the present invention is effective for preventing or treating intestinal dysfunction such as constipation, etc., and includes a plant-derived component which minimizes adverse effects on the human body.

Abstract: A semiconductor device disclosed in an embodiment comprises: a light emitting unit comprising a light emitting structure layer which has a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; and a sensor unit disposed on the light emitting unit, wherein the sensor unit comprises: a sensing material changing in resistance with light emitted by the light emitting unit; a first sensor electrode comprising a first pad portion and a first extension part extending from the first pad portion and contacting the sensing material; and a second sensor electrode comprising a first pad portion and a second extension part extending toward the first extension part from the second pad portion and contacting the sensing material. The sensor unit senses an external gas in response to the light generated from the light emitting unit.

Abstract: A handler for testing semiconductor device is disclosed. The handler for testing semiconductor device includes a socket plate having a test socket to be electrically connected to a tester, a device feeder configured to feed a semiconductor device to the test socket or recover the semiconductor device from the test socket, a camera obtaining an image of the test socket, a sensor sensing an exposing moment that at least one photographing area among photographing areas on the test socket is exposed to the camera, while the device feeder moves, and a controller configured to operate the camera to take a photograph at the exposing moment and to determine whether a semiconductor device remains in the test socket, using the image obtained by the camera.

Abstract: A vertical non-volatile memory device includes a substrate, and a first stack of word lines and a second stack of word lines extending in a first direction on the substrate and separated from each other in a second direction perpendicular to the first direction. The device further includes first array lines extending in the second direction on the first and the second stack, and connected to word lines of the first and the second stack through at least two of first via contacts in a same level. The device further include first word select lines being in a same level and extending in the first direction, and connected to each of the first array lines through at least one of second via contacts. Ends of each of the first and the second stack have a form of stairs on the substrate.

Abstract: An organic electroluminescent device includes a substrate including a plurality of pixel regions each having a light emission region and an element region; a plurality of thin film transistors (TFTs) including at least one switching TFT and at least one driving TFT in each element region; a planarization layer on the plurality of TFTs; a first electrode on the planarization layer and including first to third portions connected to one another, wherein the first and second portions are at each pixel region, and the third portion is at a neighboring pixel region; an organic light emitting layer on the first electrode; and a second electrode on the organic light emitting layer, wherein an end of the third portion overlaps the driving TFT of the neighboring pixel region.

Abstract: A vertical non-volatile memory device includes a substrate, and a first stack of word lines and a second stack of word lines extending in a first direction on the substrate and separated from each other in a second direction perpendicular to the first direction. The device further includes first array lines extending in the second direction on the first and the second stack, and connected to word lines of the first and the second stack through at least two of first via contacts in a same level. The device further include first word select lines being in a same level and extending in the first direction, and connected to each of the first array lines through at least one of second via contacts. Ends of each of the first and the second stack have a form of stairs on the substrate.

Abstract: A vertical non-volatile memory device includes a substrate, and a first stack of word lines and a second stack of word lines extending in a first direction on the substrate and separated from each other in a second direction perpendicular to the first direction. The device further includes first array lines extending in the second direction on the first and the second stack, and connected to word lines of the first and the second stack through at least two of first via contacts in a same level. The device further include first word select lines being in a same level and extending in the first direction, and connected to each of the first array lines through at least one of second via contacts. Ends of each of the first and the second stack have a form of stairs on the substrate.

Abstract: A non-volatile memory device having a vertical structure includes a NAND string having a vertical structure. The NAND string includes a plurality of memory cells, and at least one pair of first selection transistors arranged to be adjacent to a first end of the plurality of memory cells. A plurality of word lines are coupled to the plurality of memory cells of the NAND string. A first selection line is commonly connected to the at least one pair of first selection transistors of the NAND string.

Abstract: An organic electroluminescent device includes a substrate including a plurality of pixel regions each having a light emission region and an element region; a plurality of thin film transistors (TFTs) including at least one switching TFT and at least one driving TFT in each element region; a planarization layer on the plurality of TFTs; a first electrode on the planarization layer and including first to third portions connected to one another, wherein the first and second portions are at each pixel region, and the third portion is at a neighboring pixel region; an organic light emitting layer on the first electrode; and a second electrode on the organic light emitting layer, wherein an end of the third portion overlaps the driving TFT of the neighboring pixel region.

Abstract: An organic electroluminescent device includes a substrate including a plurality of pixel regions each having a light emission region and an element region; a plurality of thin film transistors (TFTs) including at least one switching TFT and at least one driving TFT in each element region; a planarization layer on the plurality of TFTs; a first electrode on the planarization layer and including first to third portions connected to one another, wherein the first and second portions are at each pixel region, and the third portion is at a neighboring pixel region; an organic light emitting layer on the first electrode; and a second electrode on the organic light emitting layer, wherein an end of the third portion overlaps the driving TFT of the neighboring pixel region.

Abstract: A non-volatile memory device having a vertical structure includes a NAND string having a vertical structure. The NAND string includes a plurality of memory cells, and at least one pair of first selection transistors arranged to be adjacent to a first end of the plurality of memory cells. A plurality of word lines are coupled to the plurality of memory cells of the NAND string. A first selection line is commonly connected to the at least one pair of first selection transistors of the NAND string.

Abstract: A non-volatile memory device having a vertical structure includes a NAND string having a vertical structure. The NAND string includes a plurality of memory cells, and at least one pair of first selection transistors arranged to be adjacent to a first end of the plurality of memory cells. A plurality of word lines are coupled to the plurality of memory cells of the NAND string. A first selection line is commonly connected to the at least one pair of first selection transistors of the NAND string.