Abstract: A nonvolatile organic bistable memory device includes a substrate, a lower electrode disposed on the substrate, a lower charge injection layer disposed on the lower electrode, an insulating polymer layer including nanoparticles disposed on the lower charge injection layer, an upper charge injection layer disposed on the insulating polymer layer, and an upper electrode disposed on the upper charge injection layer. The lower and upper charge injection layers each include fullerenes and/or carbon nanotubes.

Abstract: A differential gear set includes a pinion gear that at least a groove having a inner planar surface, at least a gear is formed in an exterior circumference thereof and at least a pinion shaft in which an end portion is inserted into the groove such that an end surface faces the inner surface of the groove and a planar portion is formed by cutting off in one side of an exterior circumference thereof corresponding to the interior circumference of the groove.

Abstract: A location guidance apparatus including a position detecting unit configured to detect a current position of the location guidance apparatus, an input unit configured to input at least one of a path guidance setting mode and path guidance providing mode, a storage unit configured to store position and movement information of the location guidance apparatus, and a control unit configured to store a first position of the location guidance apparatus and to determine a moving path from the first position to a second position of the location guidance apparatus when the path guidance setting mode is input, and to provide path guidance information including a reverse of the moving path including the second position to the first position when the path guidance providing mode is input.

Abstract: A flash memory device with a nanoscale floating gate and a method of manufacturing thereof are disclosed. At least one embodiment of the present invention provides a much simpler and easier method of manufacturing nanocrystals (or nanocrystallines) for the flash memory device than the conventional method. Since the nanocrystals are homogeneously dispersed as a polymer layer without agglomeration, size and density of the nanoparticles may be controlled. Additionally, one embodiment of the present invention provides memory devices with nanoscale floating gates, and related methods of manufacture, of high efficiency and cost effectiveness by employing electrically and chemically more stable nanosacle floating gates compared to conventional ones.