Abstract: A semiconductor device includes a substrate, a bit line conductive layer disposed on the substrate and extending in a first lateral direction substantially parallel to a surface of the substrate, first and second channel structures disposed on the bit line conductive layer to be spaced apart from each other in the first lateral direction, first and second gate dielectric layers disposed on side surfaces of the first and second channel structures over the substrate, first and second gate line conductive layers disposed on the first and second gate dielectric layers, respectively, the first and second gate line conductive layers common to the first and second channel structures, respectively, and extending in a second lateral direction perpendicular to the first lateral direction and substantially parallel to the surface of the substrate, and first and second storage node electrode layers disposed over the first and second channel structures, respectively.

Abstract: The present invention relates to a chemical and biological integrated degradation process for PET, for recycling PET, and, more specifically, the present invention provides a PET upcycling technique for producing a high-value product via a chemical pretreatment process of PET, a TPA and EG production process using an enzyme, and a process for converting TPA and EG to PCA and GLA, respectively.

Abstract: A single-wire communication system and a control method of the single-wire communication system are disclosed. A single-wire communication system includes a single-wire, a first communication module and a second communication module. The first communication module includes a plurality of current conveyors so as to communicate high-speed signals only with current freely from a capacitive load of the single-wire. The first communication module is connected to one side of the single-wire. The second communication module includes a plurality of current conveyors so as to communicate high-speed signals only with current freely from a capacitive load of the single-wire. The second communication module is connected to another side of the single-wire.

Abstract: A semiconductor device includes a substrate and a gate structure disposed over the substrate. The gate structure includes gate electrode layers and interlayer insulation structures that are alternately stacked with each other. The semiconductor device includes a dielectric structure disposed over the substrate to contact a sidewall surface of the gate structure, and a channel layer disposed on a sidewall surface of the dielectric structure over the substrate. Each of the interlayer insulation structure includes an insulation layer and a metal-organic framework layer that are disposed on the same plane.

Abstract: A resistive memory device includes: conductive layers and interlayer insulating layers, which are alternatively stacked; a vertical hole vertically penetrating the conductive layers and the interlayer insulating layers; a gate insulating layer disposed over an inner wall of the vertical hole; a charge trap layer disposed over an inner wall of the gate insulating layer; a channel layer disposed over an inner wall of the charge trap layer; and a variable resistance layer disposed over an inner wall of the channel layer.

Abstract: A semiconductor memory device includes a tunnel insulating layer, a data storage layer, and a blocking insulating layer that are sequentially disposed. The tunnel insulating layer includes Metal Organic Frameworks (MOF) having a lower dielectric constant than a dielectric constant of the blocking insulating layer.

Abstract: A sterilizing device includes a pipe having an inlet and an outlet and allowing fluid to move therethrough and a light source provided on one side of the pipe and providing light to the fluid. At least a portion of the pipe is provided in a spiral shape and the inlet and/or the outlet are arranged in a light emitting region.

Abstract: A sidestream smoke removal device and a control method thereof are provided. The sidestream smoke removal device according to some embodiments of the present disclosure may include a housing in which a smoking space is formed, an article insertion portion which is disposed at one end of the housing and forms an opening for insertion of a smoking article into the smoking space, an ignition portion which is configured to ignite the smoking article inserted into the smoking space, a sidestream smoke processing portion which is configured to process sidestream smoke generated from the smoking article inserted into the smoking space, and a heating portion disposed inside the housing to heat the smoking space. The heating portion may heat the smoking space to remove a smell generated due to by-products of smoking, and accordingly, the cleanliness of the sidestream smoke removal device can be improved.

Abstract: A peripheral component interconnect express (PCIe) device includes a common function performing operations associated with a PCIe interface according to a function type, the common function being programmable to be a function type selected from a plurality function types, an access identification information controller generating first access identification information for allowing an access to the common function, and providing the first access identification information to an assigned system image to which the common function has been assigned, a data packet receiver receiving a data packet including target identification information indicating a target system image from the target system image, and an access allowance determiner determining whether or not to allow the target system image to access the common function based on the first access identification information and the target identification information.

Abstract: Provided are a vehicle transmission and a vehicle powertrain device including the same. The present disclosure includes a driving sun gear receiving a driving force transmitted from a motor, a first sun gear having the same rotating axis as the driving sun gear, a second sun gear inserted into the first sun gear and having the same rotating axis as the first sun gear, a planetary gear provided with a plurality of stages which respectively mesh with the driving sun gear, the first sun gear, and the second sun gear, and a carrier to which the planetary gear is coupled so as to be rotatable and into which the first sun gear and the second sun gear are inserted.

Abstract: An embodiment vehicle door opening/closing system includes an inner panel defining a door open portion of a vehicle, the inner panel including an installation groove having a protruding or recessed shape, a driving device disposed in the installation groove of the inner panel, and a link mechanism installed on a chassis through a rotating shaft, a first end of the link mechanism being connected to the driving device such that power is transferred thereto, and a second end of the link mechanism being connected to a door such that, during driving of the driving device, the link mechanism rotates with reference to the rotating shaft to open/close the door.

Abstract: The present invention provides an evaporative condenser capable of ensuring cooling performance without generating pressure loss, and provides an evaporative condenser comprising: a condensation module; a water injection module for spraying; and a blowing module, wherein the condensation module has stacked N header rows, each comprising: a first header which is disposed at one side thereof and in which a flow path is formed; and a plurality of connecting tubes for connecting the flow paths of the first header and the second header between the first header and the second header, and, here, N is a natural number greater than or equal to 2.

Abstract: A semiconductor device includes: a bit line; a first barrier layer disposed on the bit line; a variable resistance layer disposed on the first barrier layer; a second barrier layer disposed on the variable resistance layer; and a word line disposed on the second barrier layer. A dielectric constant of the second barrier layer is greater than a dielectric constant of the first barrier layer.

Abstract: A semiconductor device includes a substrate and a gate structure disposed over the substrate. The gate structure includes at least one gate electrode layer and at least one interlayer insulating layer that are alternately stacked over the substrate. The semiconductor device includes a hole pattern penetrating the gate structure over the substrate, and a gate insulating layer, a channel layer, a resistor layer, and a resistance changing layer sequentially disposed on a sidewall surface of the gate structure within the hole pattern. Each of the resistor layer and the resistance changing layer is disposed opposite to the gate insulating layer, based on the channel layer.

Abstract: A light source driving apparatus according to an embodiment includes a light source part; a constant current driving part connected to the light source part, including a first switching device, and supplying a constant current to the light source part according to a switching operation of the first switching device; a driving control part outputting a switching signal for controlling the first switching device consisting the constant current driving part; an abnormal state sensing part sensing an abnormal state of the light source part and an abnormal state of the driving control part, and outputting a control signal according to a result of the sensing; and a protective circuit part selectively operating based on the control signal output from the abnormal state sensing part to stop an operation of the constant current driving part and an operation of the light source part.

Abstract: Provided are an adhesive film, an optical member comprising same, and an optical display device comprising same, the adhesive film being formed of a composition that includes: a monomer mixture including a monomer having a glass transition temperature of homopolymer of about ?50° C. or less, and (meth)acrylate having a hydroxyl group; and an epoxy silane coupling agent, wherein a variation of the shear strain rate of equation 1 is about 10% or less for the adhesive film.

Abstract: Various embodiments relate to a device and method for controlling vehicles and a radar system for vehicles. The vehicle controller may include a spectrum generator generating a 2D spectrum, a range-velocity map generator generating a range-velocity map corresponding to each height value included in a height set, a correlation coefficient determiner determining a correlation coefficient corresponding to each height value included in the height set, and a target determiner estimating a height of a target based on the correlation coefficient and recognizing the target based on the height of the target.

Abstract: A nonvolatile memory device according to an embodiment includes a substrate having an upper surface, a source electrode structure disposed on the substrate, and a channel structure disposed over the substrate and disposed to contact one sidewall surface of the source electrode structure. In addition, the nonvolatile memory device includes a drain electrode structure disposed to contact one sidewall surface of the channel structure over the substrate. In addition, the nonvolatile memory device includes a plurality of ferroelectric structures extending in a first direction perpendicular to the substrate in the channel structure and disposed to be spaced apart from each other along the second direction perpendicular to the first direction. In addition, the nonvolatile memory device includes a gate electrode structure disposed in each of the plurality of ferroelectric structure to extend along the first direction.

Abstract: A semiconductor device may include: a first conductive layer; a second conductive layer spaced apart from the first conductive layer; a tunnel insulating layer interposed between the first conductive layer and the second conductive layer and disposed adjacent to the first conductive layer; a charge blocking layer interposed between the first conductive layer and the second conductive layer and disposed adjacent to the second conductive layer; and a selector layer interposed between the tunnel insulating layer and the charge blocking layer, wherein the semiconductor device functions as a self-selecting memory.

Abstract: An adhesive film formed of an adhesive composition including a hydroxyl group-containing (meth)acrylic copolymer and a silicone-containing (meth)acrylic compound, the adhesive film having a peel strength ratio of about 50% or more, as calculated by Equation 1, an optical member including the same, and an optical display apparatus including the same are disclosed.