Abstract: An automatic labeling method for assigning labels to unlabeled point clouds among a set of labeled and unlabeled point clouds includes preparing an initial machine learning classification model, selecting a labeled point cloud for each of the unlabeled point clouds based on similarities between a feature vector of each of the unlabeled point clouds output through the model and feature vectors of the labeled point clouds output through the model and assigning a cluster label to each of the unlabeled point clouds based on a label of the selected labeled point cloud, assigning pseudo labels to the unlabeled point clouds to which the cluster labels are assigned based on a confidence score obtained through the model, and updating the model by training the model with the labeled point clouds and the unlabeled point clouds to which the pseudo labels are assigned.

Abstract: A memory device includes a first cell block on a substrate at a first level, and a second cell block on the substrate at a second level different from the first level. Each of the first and second cell blocks includes a word line extending in a first direction that is parallel to a top surface of the substrate, a word line contact connected to a center point of the word line, a bit line extending in a second direction that is parallel to the top surface of the substrate and intersects the first direction, a bit line contact connected to a center point of the bit line, and a memory cell between the word and bit lines. The second cell block is offset from the first cell block in at least one of the first and second directions.

Abstract: There is provided a semiconductor device having reduced contact resistance and enhanced performance. The semiconductor device includes a substrate, a first active pattern spaced apart from the substrate and extending in a first direction, and including a first two-dimensional semiconductor material, a first gate electrode extending in a second direction intersecting the first direction on the substrate, and through which the first active pattern penetrates, and a first source/drain contact which includes a first contact insertion film and a first filling metal film sequentially stacked on a side surface of the first gate electrode, and is connected to the first active pattern, wherein the first contact insertion film at least partially surrounds a lower surface, a side surface and an upper surface of an end portion of the first active pattern, and the first active pattern and the first contact insertion film form an ohmic contact.

Abstract: A semiconductor device having high performance and a high degree of integration includes a substrate, a first transistor disposed on the substrate, the first transistor comprising a first active pattern including a first two-dimensional semiconductor material, a first gate electrode through which the first active pattern penetrates, and a first source/drain contact connected to the first active pattern on a side surface of the first gate electrode, a second transistor disposed on an upper surface of the first transistor, the second transistor comprising a second active pattern including a second two-dimensional semiconductor material, a second gate electrode through which the second active pattern penetrates, and a second source/drain contact connected to the second active pattern on a side surface of the second gate electrode, and a first wiring structure interposed between the first transistor and the second transistor, and electrically connecting the first transistor and the second transistor.

Abstract: Disclosed are a semiconductor device and a method of fabricating the same. The semiconductor device includes first and second gate patterns that are spaced apart from each other in a first direction on a substrate and extend in the first direction, a separation pattern that is disposed between and being in direct contact with the first and second gate patterns and extends in a second direction intersecting the first direction, a third gate pattern that is spaced apart in the second direction from the first gate pattern and extends in the first direction, and an interlayer dielectric layer disposed between the first gate pattern and the third gate pattern. The separation pattern includes a material different from a material of the interlayer dielectric layer. A bottom surface of the separation pattern has an uneven structure.

Abstract: The present disclosure relates to a defect inspection device including: an imaging part that captures an image of a first frame having a predetermined width and a predetermined length along a width direction and a length direction of a test object, respectively; an image division part that divides the image of the first frame of the test object captured by the imaging part into a plurality of second frames smaller than the first frame along the width direction of the test object; a brightness calculation part that measures a brightness value of each of the plurality of the second frames, and calculates a defect determination value of the first frame based on the brightness values of the plurality of the second frames; and a control part that determines a line defect existing along the length direction of the test object based on the calculated defect determination value of the first frame.

Abstract: Proposed is an air conditioning facility for preventing spread of an infectious disease, the air conditioning facility including a first chamber having a plurality of air discharge holes configured to allow air processed by an air conditioner to be discharged toward an indoor space, an air suction pipe connected to the indoor space and a suction hole of the air conditioner and having a suction end configured to allow air to be suctioned from the indoor space; and an ultraviolet light irradiation unit disposed on a path in which air suctioned from the air suction pipe is discharged through the air discharge holes and configured to emit UV light for sterilization.

Abstract: In a method of producing an ethylene-carboxylic acid copolymer, a monomer solution containing a carboxylic acid monomer is supplied from a discharging unit. The carboxylic acid monomer is copolymerized with an ethylene-based monomer. A coefficient of friction between the discharging unit and the monomer solution is maintained as 0.3 or less.

Abstract: A display device includes a touch sensor, a touch driver, and display driver. The touch driver drives the touch sensor at a first frequency, provides touch driving signals to touch electrodes during a touch sensing period of a touch frame period, and stops providing the touch driving signals during a touch waiting period of the touch frame period. The display drivers drives a display panel at a second frequency lower than the first frequency in a first mode, provides scan signals to pixels during a display period of a display frame period, and stops providing the scan signals during a display waiting period of the display frame period. When the display driver switches from the first mode to a second mode, the display driver drives the display at a third frequency lower than the second frequency, and the touch driver increases the touch waiting period of the touch frame period.

Abstract: A method of a charging apparatus for controlling wireless charging is provided. The method includes detecting an electronic device, determining a charging method corresponding to the detected electronic device, and wirelessly charging the electronic device by selecting a coil corresponding to the determined charging method.

Abstract: In various embodiments, an antenna array may comprise a dielectric; a first patch antenna disposed on a first region of the dielectric; a second patch antenna disposed on a second region of the dielectric; and a ground layer including a first sub-ground layer in contact with a lower portion of the first region of the dielectric, a third sub-ground layer in contact with a lower portion of the second region of the dielectric, and a second sub-ground layer spaced apart from a lower portion between the first region and the second region of the dielectric.

Abstract: The present invention relates to an artificial intelligence (AI), which emulates functions of a human brain, such as recognition and reasoning, by utilizing a machine learning algorithm such as deep learning, and relates to context awareness based artificial intelligence application technology for obtaining interest information of a user from an image displayed to the user.

Abstract: A vibration detection apparatus is disclosed. The vibration detection apparatus comprises a body configured to have internal space, and a vibration sensor formed on the body and configured to sense vibration from a measuring object. Here, a space exists between the vibration sensor and a surface opposed to the vibration sensor of the body.

Abstract: Disclosed are a three-dimensional semiconductor device and a method of fabricating the same. The semiconductor device includes: a first active region on a substrate, the first active region including a pair of lower source/drain regions and a lower channel structure; a second active region on the first active region, the second active region including a pair of upper source/drain regions and an upper channel structure; and a gate electrode on the lower and upper channel structures. The gate electrode includes: first and second metal structures, which are respectively provided adjacent bottom and top surfaces of semiconductor layers of the lower and upper channel structures.

Abstract: A touch sensor includes first touch cells disposed in a first touch sensing area, the first touch cells each including a first touch pattern and a first dummy pattern, and second touch cells disposed in a second touch sensing area, the second touch cells each including a second touch pattern and a second dummy pattern. An area of a first dummy pattern area in which the first dummy pattern is disposed is greater than an area of a second dummy pattern area in which the second dummy pattern is disposed.

Abstract: Provided are: a SOUR-resistant heavy-wall steel plate having excellent low-temperature toughness and post-heat treatment characteristics; and a method for manufacturing the same. The SOUR-resistant heavy-wall steel plate of the present invention comprises: in terms of weight %, 0.02-0.06% of C; 0.5% or less of Si (excluding 0%); 0.8-2.0% of Mn; 0.03% or less of P; 0.003% or less of S; 0.06% or less of Al; 0.01% or less of N; 0.005-0.1% of Nb; 0.005-0.05% of Ti; 0.0005-0.005% of Ca; one or more selected from 0.05-0.5% of Ni, 0.05-0.5% of Cr, 0.02-0.4% of Mo, and 0.005-0.1% of V; and the remainder Fe and unavoidable impurities, wherein the heavy-wall steel plate satisfies relational expressions 1-3, and has a percent ductile fracture of 85% or more in the drop weight tear test (DWTT) at ?20° C.

Abstract: Three-dimensional (3D) semiconductor device may include a first active region on a substrate, the first active region including a lower channel pattern and a pair of lower source/drain patterns that are on opposing side surfaces of the lower channel pattern respectively, a second active region stacked on the first active region, the second active region including an upper channel pattern and a pair of upper source/drain patterns that are on opposing side surfaces of the upper channel pattern, respectively, a dummy channel pattern between the lower and upper channel patterns, a pair of liner layers that are on opposing side surfaces of the dummy channel pattern, respectively, and a gate electrode on the lower, dummy, and upper channel patterns. The gate electrode may include a lower gate electrode on the lower channel pattern and an upper gate electrode on the upper channel pattern.

Abstract: A display device includes a substrate including a display area and a non-display area surrounding the display area, a common voltage transmission line which is disposed in the non-display area and transmits a common voltage, a common voltage line disposed in the display area and connected with the common voltage transmission line, a common electrode disposed in the display area and the non-display area and connected with the common voltage line, a first pad disposed in the non-display area and connected with the common electrode, and a second pad disposed in the non-display area and connected with the common voltage transmission line.

Abstract: A clock frequency divider circuit and a receiver are provided. The clock frequency divider circuit includes a reset retimer circuit configured to receive a reset signal and a clock signal, output a reset buffer signal of a differential signal pair obtained by buffering the reset signal, and output a reset synchronization signal obtained by synchronizing the reset signal with the clock signal, a clock buffer circuit configured to receive the clock signal and the reset synchronization signal and output a clock buffer signal of a differential signal pair obtained by buffering the clock signal, and an IQ divider circuit configured to output first through fourth output signals having different phases based on the reset buffer signal and the clock buffer signal.

Abstract: A wireless power transmission apparatus includes a source resonator configured to transmit an output power from which a harmonic component has been cancelled to a wireless power reception apparatus by resonating with a target resonator of the wireless power transmission apparatus, and a resonant power generator configured to differentially input a first input signal and a second input signal to the source resonator, and cancel the harmonic component of the output power.