Patents by Inventor Jae Jung Kim

Jae Jung Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190219096
    Abstract: A joint ball device which is connected to a ball end of a control lever may be provided. The joint ball device includes: a ball seat which is formed to have a hollow cylindrical body and at least a pair of slots formed in a longitudinal direction of the body from an end of the body, and which includes a receiving portion defined by the body so as to receive the ball end of the control lever on the end of the body, and includes a stopper which protrudes from an outer circumferential surface of the body; and a cable end portion which is connected to a shift cable and is fastened to the ball seat. The stopper of the ball seat is fastened to the cable end portion.
    Type: Application
    Filed: December 27, 2018
    Publication date: July 18, 2019
    Inventors: Kyu-Jung Kim, Jae-Hyoung Park
  • Patent number: 10351790
    Abstract: The present invention provides an apparatus for molding gas hydrate pellets that includes: a pulverizer in which dehydrated gas hydrates are pulverized; a cooler having a rotating shaft provided therein, comprising a plurality of agitation blades installed along a height direction of the rotating shaft and configured to cool the gas hydrates to a predetermined temperature; a decompressor configured to decompress the cooled gas hydrates to a predetermined pressure; and a pellet molder configured to mold the decompressed gas hydrates to pellets.
    Type: Grant
    Filed: June 27, 2013
    Date of Patent: July 16, 2019
    Assignees: Dongguk University Industry-Academic Cooperation Foundation, Dongshin Hydraulics Co., Ltd., Korea Gas Corporation, Sungil Turbine Co., Ltd., Daewoo Engineering & Construction Co., Ltd.
    Inventors: Myung Ho Song, Yong Seok Yoon, In Kee Jung, Jung Wook Kim, Seung Hee An, Sang Yup Jang, Jae Won Lee, Sang M. Kim, Jin Seop Yang, Ta-Kwan Woo
  • Patent number: 10336825
    Abstract: The present disclosure relates to an isolated anti-FcRn antibody, which is an antibody binding to FcRn (stands for neonatal Fc receptor, also called FcRP, FcRB or Brambell receptor) that is a receptor with a high affinity for IgG or a fragment thereof, a method of preparing thereof, a composition for treating autoimmune disease, which comprises the antibody, and a method of treating and diagnosing autoimmune diseases using the antibody. The FcRn-specific antibody according to the present disclosure binds to FcRn non-competitively with IgG to reduce serum pathogenic auto-antibody levels, and thus can be used for the treatment of autoimmune diseases.
    Type: Grant
    Filed: April 5, 2017
    Date of Patent: July 2, 2019
    Assignee: HANALL BIOPHARMA CO., LTD.
    Inventors: Sung Wuk Kim, Seung Kook Park, Jae Kap Jeong, Hyea Kyung Ahn, Min Sun Kim, Eun Sun Kim, Hae-Young Yong, Dongok Shin, Yeon Jung Song, Tae Hyoung Yoo
  • Publication number: 20190192412
    Abstract: The present invention relates to a cosmetic composition using a mannosylerythritol lipid, which is a kind of glycolipid, as a stabilizer in order to prevent kojyl methylenedioxycinnamate, which is an active ingredient having various skin effects such as antiaging, whitening and antioxidation, from causing crystallization inside a dosage form. Even if the cosmetic composition according to the present invention contains a high concentration of an active ingredient, crystal precipitation does not occur in various dosage forms, and thus the functionality of the active ingredient is maximized, skin delivery is increased and the texture during use is improved.
    Type: Application
    Filed: March 1, 2019
    Publication date: June 27, 2019
    Applicant: AMOREPACIFIC CORPORATION
    Inventors: Yu Jung KIM, Hyeon Chung Kim, Jae Won Yoo, Yong Jin Kim, Do Hoon Kim, Sung Il Park
  • Publication number: 20190196893
    Abstract: A method performed by an appliance includes receiving, from a managing server, information about a data pattern detection routine to detect abnormal data among operation data of the appliance, determining whether the operation data of the appliance matches a normal data pattern defined by the data pattern detection routine, determining the operation data as the abnormal data when the operation data does not match the normal data pattern, and transmitting the abnormal data to the managing server.
    Type: Application
    Filed: July 27, 2018
    Publication date: June 27, 2019
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jae-Hun LEE, Myung-Sun KIM, Ayush JAIN, Tae-Ho HWANG, Jae-Hong KIM, Hye-Jung CHO
  • Patent number: 10334193
    Abstract: A read-out circuit of an image sensor includes a ramp signal generator, a bias voltage generator and a conversion circuit. The ramp signal generates a ramp signal that linearly varies at a constant slope. The bias voltage generator generates a bias voltage based on a power supply voltage having a first noise component. The conversion circuit generates a reference voltage based on the bias voltage and the ramp signal, and performs an analog-to-digital conversion on an analog signal from a pixel to generate a digital signal corresponding to the analog signal. The analog signal has second noise component. The bias voltage generator adjusts an alternating current component included in the bias voltage such that a magnitude of a third noise component added to the reference voltage is substantially the same as a magnitude of the second noise component.
    Type: Grant
    Filed: January 25, 2017
    Date of Patent: June 25, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyu-Ik Cho, Ji-Yong Kim, Jae-Jung Park
  • Publication number: 20190180111
    Abstract: To summarize an input image, an image summarization system extracts a background frame and object information of each of objects from an image stream, and receives a region of interest set in a predetermined region of the background frame. The image summarization system selects the extracted objects as queue objects, and generates a summarized video based on the queue object, the background frame, and the region of interest.
    Type: Application
    Filed: June 30, 2017
    Publication date: June 13, 2019
    Applicant: KT Corporation
    Inventors: Kwang Jung KIM, Tae Heon PARK, Jae Cheol KWON, Bong-Ki KIM, Mi-Sook LEE
  • Patent number: 10319267
    Abstract: A display device includes a display portion having a plurality of pixels; a lens array portion enables light emitted from the plurality of pixels to travel into a plurality of viewpoint areas and thus an image is viewed in the plurality of viewpoint areas; a data compensation circuit generating a compensation image signal by applying a compensation value according to a viewing angle to an input image signal that includes luminance information of the plurality of pixels; and a data driver applying a data voltage to the plurality of pixels according to an image data signal generated based on the compensation image signal, wherein the lens array portion includes a lens providing local focusing to two or more pixels, and the data compensation circuit applies a compensation value according to a viewing angle from a pixel corresponding a center of the lens to two or more different side directions.
    Type: Grant
    Filed: January 10, 2018
    Date of Patent: June 11, 2019
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Su Jung Huh, Jae Joong Kwon, Beom Shik Kim
  • Patent number: 10312074
    Abstract: A method of producing a layer structure includes forming a first organic layer by applying a first composition including an organic compound on a substrate having a plurality of patterns, applying a solvent on the first organic layer to remove a part of the first organic layer, and applying a second composition including an organic compound on a remaining part of the first organic layer and forming a second organic layer through a curing process.
    Type: Grant
    Filed: June 16, 2015
    Date of Patent: June 4, 2019
    Assignee: SAMSUNG SDI CO., LTD.
    Inventors: Min-Soo Kim, Hyun-Ji Song, Sun-Hae Kang, Sung-Min Kim, Sung-Hwan Kim, Young-Min Kim, Yun-Jun Kim, Hea-Jung Kim, Youn-Hee Nam, Jae-Yeol Baek, Byeri Yoon, Yong-Woon Yoon, Chung-Heon Lee, Seulgi Jeong, Yeon-Hee Jo, Seung-Hee Hong, Sun-Min Hwang, Won-Jong Hwang, Songse Yi, MyeongKoo Kim, Naery Yu
  • Patent number: 10303412
    Abstract: An electronic device is provided that includes a first display and a second display. The electronic device also includes a processor configured to allocate a first set of resources to the first display and a second set of resources to the second display. The first set of resources is different from the second set of resources. Each of the first set of resources and the second set of resources includes one or more of at least one available hardware resource and at least one available software resource.
    Type: Grant
    Filed: February 2, 2016
    Date of Patent: May 28, 2019
    Assignee: Samsung Electronics Co., Ltd
    Inventors: Duk Ki Hong, Hyuk Kang, Jeong Hun Kim, Jae Bong Yoo, Kyung Soo Lim, Jun Hak Lim, Min Gyew Kim, Na Jung Seo
  • Publication number: 20190154679
    Abstract: Apparatuses and methods for cell and tissue assays and agent delivery are generally described.
    Type: Application
    Filed: November 14, 2018
    Publication date: May 23, 2019
    Applicants: Massachusetts Institute of Technology, Beth Israel Deaconess Medical Center
    Inventors: Patrick S. Doyle, Augusto M. Tentori, Maxwell Benjamin Nagarajan, Jae Jung Kim, Wen Cai Zhang, Frank J. Slack
  • Publication number: 20190152774
    Abstract: The MEMS sensor includes: a device substrate on which a device pattern is formed; a cap substrate disposed on top of the device substrate, the cap substrate comprising a first cavity area; a base substrate disposed on the bottom of the device substrate; a first-through silicon via formed through the base substrate, the first-through silicon via including a first core area for outputting an electrical signal provided from the device pattern to the outside or transmitting an electrical signal provided from the outside to the device pattern, a first insulating area surrounding an outer surface of the first core area, a first peripheral area surrounding an outer surface of the first insulating area, and a second insulating area surrounding an outer surface of the first peripheral area; and a circuit board, electrically connected to the first-through silicon via, for processing electrical signals for the device pattern.
    Type: Application
    Filed: January 24, 2019
    Publication date: May 23, 2019
    Applicant: SHIN SUNG C&T CO., LTD.
    Inventors: Ci Moo SONG, Keun Jung YOUN, Do Hyeon LEE, Yong Kook KIM, Jae Hyun AHN
  • Patent number: 10290525
    Abstract: Disclosed is a method for marking, by using a laser marker, a plurality of wafer dice divided by a wafer dicing process. The disclosed marking method for wafer dice comprises the steps of: setting a plurality of scan regions having a mutually overlapping portion on a wafer including the wafer dice; scanning the scan regions of the wafer a plurality of times by using a line scan camera; collecting position information of each of wafer dice located in regions in which the scan regions do not overlap; collecting, through image synthesis, position information of each of wafer dice located in regions in which the scan regions overlap; and marking, by using the laser marker, each of all the wafer dice of which the position information has been collected.
    Type: Grant
    Filed: July 1, 2014
    Date of Patent: May 14, 2019
    Assignee: EO TECHNICS CO., LTD.
    Inventors: Sun Jung Kim, Jae Man Choi, Sung Beom Jung, Jung Jin Seo
  • Publication number: 20190135963
    Abstract: The present invention relates to an olefin-based copolymer having novel crystalline properties and capable of providing a molded article with further improved strength and impact strength when compounded with other resins, and a method for preparing the same. The olefin-based copolymer is an olefin-based copolymer comprising an ethylene repeating unit and an ?-olefinic repeating unit. The olefin-based copolymer comprises polymer fractions defined by three different peaks at a predetermined temperature when analyzed by cross-fractionation chromatography.
    Type: Application
    Filed: September 18, 2017
    Publication date: May 9, 2019
    Applicant: LG Chem, Ltd.
    Inventors: Seul Ki Kim, Eun Jung Lee, Choong Hoon Lee, Ki Won Han, Jae Kwon Jang, Hyo Jung Han, In Sung Park
  • Publication number: 20190135917
    Abstract: The present disclosure relates to an isolated anti-FcRn antibody, which is an antibody binding to FcRn (stands for neonatal Fc receptor, also called FcRP, FcRB or Brambell receptor) that is a receptor with a high affinity for IgG or a fragment thereof, a method of preparing thereof, a composition for treating autoimmune disease, which comprises the antibody, and a method of treating and diagnosing autoimmune diseases using the antibody. The FcRn-specific antibody according to the present disclosure binds to FcRn non-competitively with IgG to reduce serum pathogenic auto-antibody levels, and thus can be used for the treatment of autoimmune diseases.
    Type: Application
    Filed: January 15, 2019
    Publication date: May 9, 2019
    Inventors: Sung Wuk KIM, Seung Kook PARK, Jae Kap JEONG, Hyea Kyung AHN, Min Sun KIM, Eun Sun KIM, Hae-Young YONG, Dongok SHIN, Yeon Jung SONG, Tae Hyoung YOO
  • Publication number: 20190126409
    Abstract: An ultra-low silicon wire for welding having excellent porosity resistance and electrodeposition coating properties is provided. The ultra-low silicon wire for welding having excellent porosity resistance and electrodeposition coating properties includes: by wt %, 0.001 to 0.30% of C; 0.15% or less of Si; 0.50 to 3.00% of Mn; 0.030% or less of P; 0.030% or less of S; and a balance of Fe and inevitable impurities.
    Type: Application
    Filed: May 25, 2018
    Publication date: May 2, 2019
    Inventors: Ji Seok Seo, Jae Jung Kim, Sang Min Park, Yong Deog Kim, Seok Hwan Kim
  • Publication number: 20190109135
    Abstract: A semiconductor device may include a substrate, a first nanowire, a second nanowire, a first gate insulating layer, a second gate insulating layer, a first metal layer and a second metal layer. The first gate insulating layer may be along a periphery of the first nanowire. The second gate insulating layer may be along a periphery of the second nanowire. The first metal layer may be on a top surface of the first gate insulating layer along the periphery of the first nanowire. The first metal layer may have a first crystal grain size. The second metal layer may be on a top surface of the second gate insulating layer along the periphery of the second nanowire. The second metal layer may have a second crystal grain size different from the first crystal grain size.
    Type: Application
    Filed: November 29, 2018
    Publication date: April 11, 2019
    Inventors: Jae Jung KIM, Young Suk CHAI, Sang Yong KIM, Hoon Joo NA, Sang Jin HYUN
  • Publication number: 20190088798
    Abstract: A semiconductor device includes a first transistor having a first threshold voltage, and including first channels, first source/drain layers connected to opposite sidewalls of the first channels, and a first gate structure surrounding the first channels and including a first gate insulation pattern, a first threshold voltage control pattern, and a first workfunction metal pattern sequentially stacked. The semiconductor device includes a second transistor having a second threshold voltage greater than the first threshold voltage, and including second channels, second source/drain layers connected to opposite sidewalls of the second channels, and a second gate structure surrounding the second channels and including a second gate insulation pattern, a second threshold voltage control pattern, and a second workfunction metal pattern sequentially stacked. A thickness of the second threshold voltage control pattern is equal to or less than a thickness of the first threshold voltage control pattern.
    Type: Application
    Filed: July 20, 2018
    Publication date: March 21, 2019
    Inventors: Jae-Jung KIM, Dong-Soo LEE, Sang-Yong KIM, Jin-Kyu JANG, Won-Keun CHUNG, Sang-Jin HYUN
  • Publication number: 20190081148
    Abstract: A semiconductor device includes first semiconductor patterns vertically stacked on a substrate and vertically spaced apart from each other, and a first gate electrode on the first semiconductor patterns. The first gate electrode comprises a first work function metal pattern on a top surface, a bottom surface, and sidewalls of respective ones of the first semiconductor patterns, a barrier pattern on the first work function metal pattern, and a first electrode pattern on the barrier pattern. The first gate electrode has a first part between adjacent ones of the first semiconductor patterns. The barrier pattern comprises a silicon-containing metal nitride layer. The barrier pattern and the first electrode pattern are spaced apart from the first part.
    Type: Application
    Filed: March 28, 2018
    Publication date: March 14, 2019
    Inventors: Wonkeun Chung, Jae-Jung Kim, Jinkyu Jang, Sangyong Kim, Hoonjoo Na, Dongsoo Lee, Sangjin Hyun
  • Patent number: 10177149
    Abstract: A semiconductor device may include a substrate, a first nanowire, a second nanowire, a first gate insulating layer, a second gate insulating layer, a first metal layer and a second metal layer. The first gate insulating layer may be along a periphery of the first nanowire. The second gate insulating layer may be along a periphery of the second nanowire. The first metal layer may be on a top surface of the first gate insulating layer along the periphery of the first nanowire. The first metal layer may have a first crystal grain size. The second metal layer may be on a top surface of the second gate insulating layer along the periphery of the second nanowire. The second metal layer may have a second crystal grain size different from the first crystal grain size.
    Type: Grant
    Filed: March 7, 2017
    Date of Patent: January 8, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jae Jung Kim, Young Suk Chai, Sang Yong Kim, Hoon Joo Na, Sang Jin Hyun