Patents by Inventor Jae-Kwang Choi
Jae-Kwang Choi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11970566Abstract: Disclosed is a method of manufacturing a polyurethane filter foam having excellent air permeability, elasticity, and restoring force. In the method of manufacturing the polyurethane filter foam, the cell size of the filter foam is made regular by controlling the pressure by adjusting the diameter of the foaming head of a foaming machine, rather than adding a cell opener, cell irregularity caused by poor dispersion of the cell opener is alleviated, and air permeability, porosity, and compression set are excellent.Type: GrantFiled: September 30, 2022Date of Patent: April 30, 2024Assignees: HYUNDAI TRANSYS INC., CHIN YANG CO., LTD.Inventors: Jae Yong Ko, Seung Keon Woo, Young Tae Cho, Won Sug Choi, Sung Yoon Lee, Jae Kwang Lee, Jun Ho Song
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Publication number: 20240090328Abstract: The present invention relates to a multi-component host material and an organic electroluminescent device comprising the same. By comprising a specific combination of the multi-component host compounds, the organic electroluminescent device according to the present invention can provide high luminous efficiency and excellent lifespan characteristics.Type: ApplicationFiled: October 26, 2023Publication date: March 14, 2024Inventors: Hee-Choon AHN, Young-Kwang KIM, Su-Hyun LEE, Ji-Song JUN, Seon-Woo LEE, Chi-Sik KIM, Kyoung-Jin PARK, Nam-Kyun KIM, Kyung-Hoon CHOI, Jae-Hoon SHIM, Young-Jun CHO, Kyung-Joo LEE
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Patent number: 10804160Abstract: A method for manufacturing a semiconductor device is provided. A first vertical structure and a second vertical structure are formed on a substrate. The second vertical structure is positioned right next to the first vertical structure. The second vertical structure is positioned right next to the first vertical structure. An insulating layer is formed on the substrate between the first and second vertical structures. A gate metal and a gate dielectric layer, are formed on the first and second vertical structures. A portion of the gate metal, gate dielectric layer, and insulating layer is removed. A portion of the substrate is removed. The portion of the substrate is removed after the gate metal is formed on the first and second vertical structure.Type: GrantFiled: July 10, 2019Date of Patent: October 13, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Kyung Yub Jeon, Soo Yeon Jeong, Jae Kwang Choi
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Publication number: 20190333825Abstract: A method for manufacturing a semiconductor device is provided. A first vertical structure and a second vertical structure are formed on a substrate. The second vertical structure is positioned right next to the first vertical structure. The second vertical structure is positioned right next to the first vertical structure. An insulating layer is formed on the substrate between the first and second vertical structures. A gate metal and a gate dielectric layer, are formed on the first and second vertical structures. A portion of the gate metal, gate dielectric layer, and insulating layer is removed. A portion of the substrate is removed. The portion of the substrate is removed after the gate metal is formed on the first and second vertical structure.Type: ApplicationFiled: July 10, 2019Publication date: October 31, 2019Inventors: Kyung Yub Jeon, Soo Yeon Jeong, Jae Kwang Choi
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Patent number: 10435587Abstract: A polishing composition includes abrasive particles, a pyrrolidone containing a hydrophilic group, a dispersing agent, a first dishing inhibitor including polyacrylic acid, and a second dishing inhibitor including a non-ionic polymer.Type: GrantFiled: July 20, 2016Date of Patent: October 8, 2019Assignees: Samsung Electronics Co., Ltd., K.C. Tech Co., Ltd.Inventors: Seung-Ho Park, Ki-Hwa Jung, Sang-Kyun Kim, Jun-Ha Hwang, Chang-Gil Kwon, Seung-Yeop Baek, Jae-Woo Lee, Ji-Sung Lee, Jae-Kwang Choi, Jin-Myung Hwang
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Patent number: 10373878Abstract: A method for manufacturing a semiconductor device is provided. A first vertical structure and a second vertical structure are formed on a substrate. The second vertical structure is positioned right next to the first vertical structure. The second vertical structure is positioned right next to the first vertical structure. An insulating layer is formed on the substrate between the first and second vertical structures. A gate metal and a gate dielectric layer are formed on the first and second vertical structures. A portion of the gate metal, gate dielectric layer, and insulating layer is removed. A portion of the substrate is removed. The portion of the substrate is removed after the gate metal is formed on the first and second vertical structure.Type: GrantFiled: December 26, 2017Date of Patent: August 6, 2019Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Kyung Yub Jeon, Soo Yeon Jeong, Jae Kwang Choi
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Publication number: 20180315662Abstract: A method for manufacturing a semiconductor device is provided. A first vertical structure and a second vertical structure are formed on a substrate. The second vertical structure is positioned right next to the first vertical structure. The second vertical structure is positioned right next to the first vertical structure. An insulating layer is formed on the substrate between the first and second vertical structures. A gate metal and a gate dielectric layer are formed on the first and second vertical structures. A portion of the gate metal, gate dielectric layer, and insulating layer is removed. A portion of the substrate is removed. The portion of the substrate is removed after the gate metal is formed on the first and second vertical structure.Type: ApplicationFiled: December 26, 2017Publication date: November 1, 2018Inventors: KYUNG YUB JEON, Soo Yeon Jeong, Jae Kwang Choi
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Patent number: 9627542Abstract: Semiconductor devices may include a semiconductor substrate with a first semiconductor fin aligned end-to-end with a second semiconductor with a recess between facing ends of the first and second semiconductor fins. A first insulator pattern is formed adjacent sidewalls of the first and second semiconductor fins and a second insulator pattern is formed within the first recess. The second insulator pattern may have a top surface higher than a top surface of the first insulator pattern, such as to the height of the top surface of the fins (or higher or lower). First and second gates extend along sidewalls and a top surface of the first semiconductor fin. A dummy gate electrode may be formed on the top surface of the second insulator. Methods for manufacture of the same and modifications are also disclosed.Type: GrantFiled: May 2, 2016Date of Patent: April 18, 2017Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Byoung-Ho Kwon, Cheol Kim, Ho-Young Kim, Se-Jung Park, Myeong-Cheol Kim, Bo-Kyeong Kang, Bo-Un Yoon, Jae-Kwang Choi, Si-Young Choi, Suk-Hoon Jeong, Geum-Jung Seong, Hee-Don Jeong, Yong-Joon Choi, Ji-Eun Han
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Publication number: 20170029664Abstract: A polishing composition includes abrasive particles, a pyrrolidone containing a hydrophilic group, a dispersing agent, a first dishing inhibitor including polyacrylic acid, and a second dishing inhibitor including a non-ionic polymer.Type: ApplicationFiled: July 20, 2016Publication date: February 2, 2017Applicant: K.C. Tech Co., Ltd.Inventors: Seung-Ho PARK, Ki-Hwa JUNG, Sang-Kyun KIM, Jun-Ha HWANG, Chang-Gil KWON, Seung-Yeop BAEK, Jae-Woo LEE, Ji-Sung LEE, Jae-Kwang CHOI, Jin-Myung HWANG
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Publication number: 20160247925Abstract: Semiconductor devices may include a semiconductor substrate with a first semiconductor fin aligned end-to-end with a second semiconductor with a recess between facing ends of the first and second semiconductor fins. A first insulator pattern is formed adjacent sidewalls of the first and second semiconductor fins and a second insulator pattern is formed within the first recess. The second insulator pattern may have a top surface higher than a top surface of the first insulator pattern, such as to the height of the top surface of the fins (or higher or lower). First and second gates extend along sidewalls and a top surface of the first semiconductor fin. A dummy gate electrode may be formed on the top surface of the second insulator. Methods for manufacture of the same and modifications are also disclosed.Type: ApplicationFiled: May 2, 2016Publication date: August 25, 2016Inventors: Byoung-Ho KWON, Cheol KIM, Ho-Young KIM, Se-Jung PARK, Myeong-Cheol KIM, Bo-Kyeong KANG, Bo-Un YOON, Jae-Kwang CHOI, Si-Young CHOI, Suk-Hoon JEONG, Geum-Jung SEONG, Hee-Don JEONG, Yong-Joon CHOI, Ji-Eun HAN
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Patent number: 9421668Abstract: Provided is a chemical mechanical polishing (CMP) apparatus that includes a swing unit installed apart from a platen, on which a CMP pad to be conditioned is placed, at a predetermined interval, a connector installed on an upper end of the swing unit at one end thereof in a perpendicular direction to the swing unit and pivoting around the swing unit above the CMP pad, a rotator rotatably installed on the other end of the connector, a CMP pad conditioner coupled to the rotator and conditioning the CMP pad when rotated, and a vibration meter installed on the connector and detecting vibrations to measure a vibration acceleration of the CMP pad conditioner, thereby predicting a wear rate of the CMP pad based on the vibration acceleration and a state in which the CMP pad conditioner is installed or being used.Type: GrantFiled: June 7, 2012Date of Patent: August 23, 2016Assignees: EHWA DIAMOND INDUSTRIAL CO., LTD., SAMSUNG ELECTRONICS CO., LTD.Inventors: Seh Kwang Lee, Youn Chul Kim, Joo Han Lee, Jae Kwang Choi, Jae Phil Boo
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Patent number: 9314901Abstract: This invention relates to a conditioner for a CMP (Chemical Mechanical Polishing) pad, which is used in a CMP process which is part of the fabrication of a semiconductor device, and more particularly, to a CMP pad conditioner in which the structure of the cutting tips is such that the change in the wear of the polishing pad is not great even when different kinds of slurry are used and when there are changes in pressure of the conditioner, and to a method of manufacturing the same.Type: GrantFiled: May 15, 2012Date of Patent: April 19, 2016Assignee: EHWA DIAMOND INDUSTRIAL CO., LTD.Inventors: Seh Kwang Lee, Youn Chul Kim, Joo Han Lee, Jae Kwang Choi, Jae Phil Boo
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Publication number: 20160064380Abstract: Semiconductor devices may include a semiconductor substrate with a first semiconductor fin aligned end-to-end with a second semiconductor with a recess between facing ends of the first and second semiconductor fins. A first insulator pattern is formed adjacent sidewalls of the first and second semiconductor fins and a second insulator pattern is formed within the first recess. The second insulator pattern may have a top surface higher than a top surface of the first insulator pattern, such as to the height of the top surface of the fins (or higher or lower). First and second gates extend along sidewalls and a top surface of the first semiconductor fin. A dummy gate electrode may be formed on the top surface of the second insulator. Methods for manufacture of the same and modifications are also disclosed.Type: ApplicationFiled: November 5, 2015Publication date: March 3, 2016Inventors: Byoung-Ho KWON, Cheol KIM, Ho-Young KIM, Se-Jung PARK, Myeong-Cheol KIM, Bo-Kyeong KANG, Bo-Un YOON, Jae-Kwang CHOI, Si-Young CHOI, Suk-Hoon JEONG, Geum-Jung SEONG, Hee-Don JEONG, Yong-Joon CHOI, Ji-Eun HAN
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Patent number: 9190407Abstract: Semiconductor devices may include a semiconductor substrate with a first semiconductor fin aligned end-to-end with a second semiconductor with a recess between facing ends of the first and second semiconductor fins. A first insulator pattern is formed adjacent sidewalls of the first and second semiconductor fins and a second insulator pattern is formed within the first recess. The second insulator pattern may have a top surface higher than a top surface of the first insulator pattern, such as to the height of the top surface of the fins (or higher or lower). First and second gates extend along sidewalls and a top surface of the first semiconductor fin. A dummy gate electrode may be formed on the top surface of the second insulator. Methods for manufacture of the same and modifications are also disclosed.Type: GrantFiled: December 12, 2014Date of Patent: November 17, 2015Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Byoung-Ho Kwon, Cheol Kim, Ho-Young Kim, Se-Jung Park, Myeong-Cheol Kim, Bo-Kyeong Kang, Bo-Un Yoon, Jae-Kwang Choi, Si-Young Choi, Suk-Hoon Jeong, Geum-Jung Seong, Hee-Don Jeong, Yong-Joon Choi, Ji-Eun Han
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Publication number: 20150140900Abstract: Provided is a chemical mechanical polishing (CMP) apparatus that includes a swing unit installed apart from a platen, on which a CMP pad to be conditioned is placed, at a predetermined interval, a connector installed on an upper end of the swing unit at one end thereof in a perpendicular direction to the swing unit and pivoting around the swing unit above the CMP pad, a rotator rotatably installed on the other end of the connector, a CMP pad conditioner coupled to the rotator and conditioning the CMP pad when rotated, and a vibration meter installed on the connector and detecting vibrations to measure a vibration acceleration of the CMP pad conditioner, thereby predicting a wear rate of the CMP pad based on the vibration acceleration and a state in which the CMP pad conditioner is installed or being used.Type: ApplicationFiled: June 7, 2012Publication date: May 21, 2015Applicants: SAMSUNG ELECTRONICS CO., LTD., EHWA DIAMOND INDUSTRIAL CO., LTD.Inventors: Seh Kwang Lee, Youn Chul Kim, Joo Han Lee, Jae Kwang Choi, Jae Phil Boo
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Publication number: 20150097251Abstract: Semiconductor devices may include a semiconductor substrate with a first semiconductor fin aligned end-to-end with a second semiconductor with a recess between facing ends of the first and second semiconductor fins. A first insulator pattern is formed adjacent sidewalls of the first and second semiconductor fins and a second insulator pattern is formed within the first recess. The second insulator pattern may have a top surface higher than a top surface of the first insulator pattern, such as to the height of the top surface of the fins (or higher or lower). First and second gates extend along sidewalls and a top surface of the first semiconductor fin. A dummy gate electrode may be formed on the top surface of the second insulator. Methods for manufacture of the same and modifications are also disclosed.Type: ApplicationFiled: December 12, 2014Publication date: April 9, 2015Inventors: Byoung-Ho KWON, Cheol KIM, Ho-Young KIM, Se-Jung PARK, Myeong-Cheol KIM, Bo-Kyeong KANG, Bo-Un YOON, Jae-Kwang CHOI, Si-Young CHOI, Suk-Hoon JEONG, Geum-Jung SEONG, Hee-Don JEONG, Yong-Joon CHOI, Ji-Eun HAN
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Publication number: 20150056795Abstract: A method of manufacturing a semiconductor devices includes providing a semiconductor substrate that includes a channel region. The method includes forming a gate electrode material film including a stepped portion on the channel region. A sacrificial material film that has an etch selectivity that is the same as an etch selectivity of the gate electrode material film is formed. The sacrificial material film is planarized until a top surface of the gate electrode material film is exposed. The stepped portion is reduced by removing an exposed portion of the gate electrode material film.Type: ApplicationFiled: July 29, 2014Publication date: February 26, 2015Inventors: Bo-kyeong Kang, Bo-un Yoon, Il-young Yoon, Jae-kwang Choi, Ho-young Kim, Se-jung Park, Jae-seok Kim
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Patent number: 8916460Abstract: Semiconductor devices may include a semiconductor substrate with a first semiconductor fin aligned end-to-end with a second semiconductor with a recess between facing ends of the first and second semiconductor fins. A first insulator pattern is formed adjacent sidewalls of the first and second semiconductor fins and a second insulator pattern is formed within the first recess. The second insulator pattern may have a top surface higher than a top surface of the first insulator pattern, such as to the height of the top surface of the fins (or higher or lower). First and second gates extend along sidewalls and a top surface of the first semiconductor fin. A dummy gate electrode may be formed on the top surface of the second insulator. Methods for manufacture of the same and modifications are also disclosed.Type: GrantFiled: May 5, 2014Date of Patent: December 23, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Byoung-Ho Kwon, Cheol Kim, Ho-Young Kim, Se-Jung Park, Myeong-Cheol Kim, Bo-Kyeong Kang, Bo-Un Yoon, Jae-Kwang Choi, Si-Young Choi, Suk-Hoon Jeong, Geum-Jung Seong, Hee-Don Jeong, Yong-Joon Choi, Ji-Eun Han
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Publication number: 20140094101Abstract: This invention relates to a conditioner for a CMP (Chemical Mechanical Polishing) pad, which is used in a CMP process which is part of the fabrication of a semiconductor device, and more particularly, to a CMP pad conditioner in which the structure of the cutting tips is such that the change in the wear of the polishing pad is not great even when different kinds of slurry are used and when there are changes in pressure of the conditioner, and to a method of manufacturing the same.Type: ApplicationFiled: May 15, 2012Publication date: April 3, 2014Applicants: SAMSUNG ELECTRONICS CO., LTD., EHWA DIAMOND INDUSTRIAL CO., LTD.Inventors: Seh Kwang Lee, Youn Chul Kim, Joo Han Lee, Jae Kwang Choi, Jae Phil Boo
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Patent number: 8597081Abstract: A pad conditioning disk, a pre-conditioning unit, and a CMP apparatus having the same are provided. The pad conditioning disk includes a base in which mountain-type tips and valley-type grooves are repeatedly connected to each other, and a cutting layer formed on the base layer. The cutting layer including conditioning particles deposited on surfaces of the tips and grooves. A surfaces roughness of conditioning particles deposited on the surfaces of the tips is less than a surface roughness of conditioning particles deposited on the surfaces of the grooves.Type: GrantFiled: September 23, 2011Date of Patent: December 3, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Jae-Kwang Choi, Hong-Jin Kim, Keon-Sik Seo, Sol Han, Kun-Tack Lee, Byoung-Ho Kwon