Abstract: An insertion method in a high-dimensional index structure for a content-based image retrieval is disclosed, in which a desired image can be efficiently searched when there is formed a high-dimensional image database. In the present invention, the basic properties of the CIR tree are utilized, and at the same time, a splitting algorithm having a superior search efficiency over the conventional CIR tree is employed. Further, an effective standard for choosing lower nodes is provided, and a re-insertion algorithm capable of re-inserting based on a weighted center is employed, thereby forming an ECIR (Extended CIR) as a high-dimensional index structure supporting efficient retrieval performance. That is, a splitting algorithm for the branch nodes and the terminal nodes are adopted so as to improve the efficiency when carrying out the search and insertion. The re-insertion objects are chose based on the weighted center when the nodes overflow.

Abstract: A method for preparing spherical phosphor particles is disclosed, wherein a precursor solution of phosphors is decomposed to solid particles by aerosol pyrolysis and rapid cooling and subsequently the solid particles are heat-treated at a temperature of 1000.degree. C. to 1600.degree. C. for a period of 1 hour to 9 hours.

Abstract: A high-power semiconductor laser device includes a semiconductor substrate of a first type, a first clad layer of a first type formed on the semiconductor substrate, an active layer of a second type and a clad layer of a second type sequentially stacked on the center of the first clad layer, and a current-blocking layer formed on the first clad layer and covering the whole surface of the active and second clad layers. Thus, crystal growth of a mirror facet is performed along with the formation of the current-blocking layer, thereby decreasing the number of process steps. Also, a II-VI group compound semiconductor having excellent electrical and optical characteristics is employed both on the mirror facet and in the current-blocking layer, so that optical absorption is prevented, which thus enhances the reliability and realizes the high-power operation of the semiconductor laser device.