Abstract: Provided are a semiconductor device, a method of fabricating the same, and a semiconductor module, an electronic circuit board, and an electronic system including the device. The semiconductor device includes a lower electrode, a rutile state lower vanadium dioxide layer on the lower electrode, a rutile state titanium oxide on the lower vanadium dioxide layer, and an upper electrode on the titanium oxide layer.

Abstract: Example embodiments relate to a semiconductor device including an oxide dielectric layer and a non-oxide dielectric layer, a method of fabricating the device, and a semiconductor module, an electronic circuit board, and an electronic system including the device. The semiconductor device may include a lower electrode, an oxide dielectric layer disposed on the lower electrode, a non-oxide dielectric layer disposed on the oxide dielectric layer, and an upper electrode disposed on the non-oxide dielectric layer.

Abstract: In a multilayer structure and a method of forming the same, a conductive layer including a metal nitride and a dielectric layer positioned on a surface of the conductive layer and having a high dielectric constant. The metal nitride comprises one of niobium, vanadium and compositions thereof. Thus, the EOT and leakage current of the multilayer structure may be sufficiently improved.

Abstract: Semiconductor structures including a first conductive layer; a dielectric layer on the first conductive layer; a second conductive layer on the dielectric layer; and a crystallized seed layer in at least one of a first portion between the first conductive layer and the dielectric layer and a second portion between the dielectric layer and the second conductive layer. Related capacitors and methods are also provided herein.

Abstract: A semiconductor device having a dielectric layer with improved electrical characteristics and associated methods, the semiconductor device including a lower metal layer, a dielectric layer, and an upper metal layer sequentially disposed on a semiconductor substrate and an insertion layer disposed between the dielectric layer and at least one of the lower metal layer and the upper metal layer, wherein the dielectric layer includes a metal oxide film and the insertion layer includes a metallic material film.

Abstract: In a method of fabricating a capacitor, a lower electrode is formed, and a dielectric layer is formed on the lower electrode. An upper electrode is foamed on the dielectric layer opposite the lower electrode. A low-temperature capping layer is formed on the upper electrode at a temperature of less than about 300° C. Related devices and fabrication methods are also discussed.

Abstract: The present invention provides organometallic compounds and methods of forming thin films including using the same. The organometallic compounds include a metal and a ligand linked to the metal. The ligand can be represented by the following formula (1): wherein R1 and R2 are each independently hydrogen or an alkyl group. The thin films may be applied to semiconductor structures such as a gate insulation layer of a gate structure and a dielectric layer of a capacitor.

Abstract: Trench capacitors that have insulating layer collars in undercut regions and methods of fabricating such trench capacitors are provided. Some methods of fabricating a trench capacitor include forming a first layer on a substrate. A second layer is formed on the first layer opposite to the substrate. A mask is formed that has an opening on top of the first and second layers. A first trench is formed by removing a portion of the first and second layers through the opening in the mask. A portion of the first layer under the second layer is removed to form an undercut region under the second layer. An insulating layer collar is formed in the undercut region under the second layer. A second trench is formed that extends from the first trench by removing a portion of the substrate through the opening in the mask. A buried plate is formed in the substrate along the second trench. A dielectric layer is formed on an inner wall and bottom of the second trench.

Abstract: Liquid chemical delivery systems are provided which include a liquid chemical storage canister, a pressurized gas source that feeds a pressurized gas into the storage canister, a vaporizer that may be used to vaporize the liquid chemical supplied from the storage canister, a delivery line that connects the storage canister to the vaporizer, a liquid mass flow controller that controls the flow rate of the liquid chemical through the delivery line, a reaction chamber that is connected to the vaporizer, and a liquid chemical recycling element that collects at least some of the chemical flowing through the system during periods when the liquid chemical delivery system is isolated from the reaction chamber.

Abstract: A method of forming a high dielectric film using atomic layer deposition (ALD), and a method of manufacturing a capacitor having the high dielectric film, include supplying a precursor containing a metal element to a semiconductor substrate and purging a reactor; supplying an oxidizer and purging the reactor; and supplying a reaction source containing nitrogen and purging the reactor.

Abstract: A method of forming a thin film including zirconium titanium oxide including introducing a reactant including a mixture of a zirconium precursor and a titanium precursor onto a substrate, and introducing an oxidizing agent onto the substrate to form a solid material including zirconium titanium oxide on the substrate is provided. The thin film may be applied to a gate insulation layer of the gate structure, a dielectric layer of the capacitor or a flash memory device, and methods of forming the same are provided.

Abstract: A method of forming a high dielectric film using atomic layer deposition (ALD), and a method of manufacturing a capacitor having the high dielectric film, include supplying a precursor containing a metal element to a semiconductor substrate and purging a reactor; supplying an oxidizer and purging the reactor; and supplying a reaction source containing nitrogen and purging the reactor.

Abstract: Trench capacitors that have insulating layer collars in undercut regions and methods of fabricating such trench capacitors are provided. Some methods of fabricating a trench capacitor include forming a first layer on a substrate. A second layer is formed on the first layer opposite to the substrate. A mask is formed that has an opening on top of the first and second layers. A first trench is formed by removing a portion of the first and second layers through the opening in the mask. A portion of the first layer under the second layer is removed to form an undercut region under the second layer. An insulating layer collar is formed in the undercut region under the second layer. A second trench is formed that extends from the first trench by removing a portion of the substrate through the opening in the mask. A buried plate is formed in the substrate along the second trench. A dielectric layer is formed on an inner wall and bottom of the second trench.

Abstract: Methods for forming a capacitor using an atomic layer deposition process include providing a reactant including an aluminum precursor onto a substrate to chemisorb a portion of the reactant to a surface of the substrate. The substrate has an underlying structure including a lower electrode. An ammonia (NH3) plasma is provided onto the substrate to form a dielectric layer including aluminum nitride on the substrate including the lower electrode. An upper electrode is formed on the dielectric layer. A second dielectric layer may be provided oil the first dielectric layer.

Abstract: Trench capacitors that have insulating layer collars in undercut regions and methods of fabricating such trench capacitors are provided. Some methods of fabricating a trench capacitor include forming a first layer on a substrate. A second layer is formed on the first layer opposite to the substrate. A mask is formed that has an opening on top of the first and second layers. A first trench is formed by removing a portion of the first and second layers through the opening in the mask. A portion of the first layer under the second layer is removed to form an undercut region under the second layer. An insulating layer collar is formed in the undercut region under the second layer. A second trench is formed that extends from the first trench by removing a portion of the substrate through the opening in the mask. A buried plate is formed in the substrate along the second trench. A dielectric layer is formed on an inner wall and bottom of the second trench.

Abstract: Methods of forming MIM comprise forming a lower electrode on a semiconductor substrate, forming a lower dielectric layer on the lower electrode, and forming an upper dielectric layer on the lower dielectric layer. The lower dielectric layer may be formed of dielectrics having larger energy band gap than that of the upper dielectric layer. An upper electrode is formed on the upper dielectric layer. The upper electrode may be formed of a metal layer having a higher work function than that of the lower electrode.

Abstract: Methods of forming an electronic device include providing a fist electrode, providing a dielectric oxide layer on the first electrode, and providing a second electrode on the dielectric oxide layer so that the dielectric oxide layer is between the first and second electrodes. More particularly, a first portion of the dielectric oxide layer adjacent the first electrode can have a first density of titanium, and a second portion of the dielectric oxide layer opposite the first electrode can have a second density of titanium different than the first density. Related structures are also discussed.

Abstract: The present invention provides organometallic precursors and methods of forming thin films including using the same. The organometallic precursors include a metal and a ligand linked to the metal. The ligand can be represented by the following formula (1): wherein R1 and R2 are each independently hydrogen or an alkyl group. The thin films may be applied to semiconductor structures such as a gate insulation layer of a gate structure and a dielectric layer of a capacitor.

Abstract: Methods of forming an electronic device include providing a fist electrode, providing a dielectric oxide layer on the first electrode, and providing a second electrode on the dielectric oxide layer so that the dielectric oxide layer is between the first and second electrodes. More particularly, a first portion of the dielectric oxide layer adjacent the first electrode can have a first density of titanium, and a second portion of the dielectric oxide layer opposite the first electrode can have a second density of titanium different than the first density. Related structures are also discussed.

Abstract: Multi-layered structures formed using atomic-layer deposition processes include multiple metal oxide layers wherein the metal oxide layers are formed without the presence of interlayer oxide layers and may include different metal oxide compositions.