Abstract: Methods of manufacturing integrated circuit capacitors include the steps of forming a first electrically insulating layer having an opening therein, on a semiconductor substrate and then forming an electrically conductive electrode layer on an upper surface of the first electrically insulating layer and on a sidewall of the opening within the first electrically insulating layer. The electrically conductive electrode layer is then covered with a second electrically insulating layer. The second electrically insulating layer and the electrically conductive electrode layer are then planarized to expose the upper surface of the first electrically insulating layer and define a capacitor electrode layer on the sidewall of the opening. The capacitor electrode layer is then selectively etched back to expose the sidewall of the opening and define a lower capacitor electrode that is recessed relative to the upper surface of the first electrically insulating layer.