Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof, and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.

Abstract: A system for rendering 6 degree-of-freedom virtual reality according to an embodiment of the present disclosure includes a visibility test module performing a visibility test for determining whether a current point of interest where a main viewpoint is directed is visible for each of a plurality of reference viewpoints and generating visibility information by identifying the number of invisible fragments of each reference viewpoint according to the performance result, a reference viewpoint selection module selecting a final reference viewpoint for a rendering process for a current frame based on the visibility information for each of the plurality of reference viewpoints and a preset selection criterion, and a rendering process module performing an image-based rendering process by using a color image and a depth image corresponding to the final reference viewpoint.

Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.

Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent. The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.

Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent. The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.

Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.

Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.

Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.

Abstract: An apparatus for estimating a camera pose according to an embodiment of the present disclosure includes a similar image searcher, a clusterer, and an estimator. The similar image searcher searches for a plurality of images similar to an input image, from among a plurality of previously-stored images, based on the input image. The clusterer creates a cluster including at least some similar images meeting predetermined conditions, from among the plurality of similar images, based on viewpoint data tagged to each of the plurality of similar images. The estimator estimates a pose of a camera that has generated the input image, based on the cluster.

Abstract: A point cloud information generation apparatus according to an embodiment includes a 360-degree image acquirer configured to acquire a 360-degree image of a three-dimensional (3D) space, a point cloud information generator configured to generate first point cloud information for the 3D space from the 360-degree image, and a viewpoint orientation image generator configured to generate a plurality of viewpoint orientation images from the 360-degree image based on a reference viewpoint in the 360-degree image, wherein the point cloud information generator further configured to generate second point cloud information for the 3D space from the plurality of viewpoint orientation images.

Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.

Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent. The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.

Abstract: A method of controlling a display device includes rendering a plurality of viewpoint images, generating a plurality of sub-images based on the plurality of viewpoint images and a plurality of mapping pattern images corresponding to the plurality of viewpoint images, generating a single light-field image based on the plurality of sub-images, and outputting the single light-field image.

Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.

Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.

Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.

Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.

Abstract: Provided herein are methods and systems for preventing and/or suppressing fire in a rechargeable battery.

Abstract: According to various embodiments, provided is an electronic device, which comprises a housing and a relay circuit located inside the housing and is capable of receiving and/or retransmitting an electromagnetic field of an external electronic device, wherein the relay circuit is configured to form a resonant frequency higher than that of an operating frequency range of the electromagnetic field transmitted by the external electronic device. Additional various embodiments are possible.

Abstract: The present invention provides a method of preparing composition for etching a silicon nitride film comprising stirring ammonium salt-based compound and metaphosphoric acid so that the ammonium salt-based compound dissolves the metaphosphoric acid, and adding phosphoric acid, wherein the ammonium salt-based compound comprises tetramethyl ammonium hydroxide (TMAH).