Patents by Inventor Jae-Woo Lim

Jae-Woo Lim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • NOR flash memory devices in which a program verify operation is performed on selected memory cells and program verify methods associated therewith
    Patent number: 7480182
    Abstract: A program operation for a NOR flash memory device is verified by programming data in a memory cell, performing a dummy verify operation on the memory cell, and performing a program verify operation on the memory cell based on a result of the dummy verify operation.
    Type: Grant
    Filed: July 13, 2006
    Date of Patent: January 20, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Bo-Geun Kim, Heung-Soo Lim, Jae-Woo Lim
  • NOR flash memory device with multi level cell and read method thereof
    Patent number: 7352623
    Abstract: A NOR flash memory device includes a multi level memory cell coupled to a bit line configured to be sensed in response to a word line voltage, and a discharge circuit configured to discharge the bit line when the multi level memory cell is sensed as an on cell.
    Type: Grant
    Filed: December 29, 2005
    Date of Patent: April 1, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Bo-Geun Kim, Heung-Soo Lim, Jae-Woo Lim
  • Nor flash memory devices in which a program verify operation is performed on selected memory cells and program verify methods associated therewith
    Publication number: 20070047320
    Abstract: A program operation for a NOR flash memory device is verified by programming data in a memory cell, performing a dummy verify operation on the memory cell, and performing a program verify operation on the memory cell based on a result of the dummy verify operation.
    Type: Application
    Filed: July 13, 2006
    Publication date: March 1, 2007
    Inventors: Bo-Geun Kim, Heung-Soo Lim, Jae-Woo Lim
  • NOR flash memory device with multi level cell and read method thereof
    Publication number: 20070002628
    Abstract: A NOR flash memory device includes a multi level memory cell coupled to a bit line configured to be sensed in response to a word line voltage, and a discharge circuit configured to discharge the bit line when the multi level memory cell is sensed as an on cell.
    Type: Application
    Filed: December 29, 2005
    Publication date: January 4, 2007
    Inventors: Bo-Geun Kim, Heung-Soo Lim, Jae-Woo Lim