Patents by Inventor Jae-Young Ahn
Jae-Young Ahn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10756185Abstract: A semiconductor device includes a substrate, a plurality of gate electrodes extending in a first direction parallel to an upper surface of a substrate on the substrate, and alternately arranged with an interlayer insulating layer in a second direction perpendicular to the upper surface of the substrate, a vertical channel layer on a sidewall of a vertical channel hole extending in the second direction by penetrating through the plurality of gate electrodes and the interlayer insulating layer, and connected to the upper surface of the substrate, and a first gap-fill insulating layer formed in the vertical channel hole and including an outer wall contacting the vertical channel layer and an inner wall opposite the outer wall, wherein a part of the inner wall forms a striation extending in the second direction.Type: GrantFiled: July 11, 2017Date of Patent: August 25, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Ji-hoon Choi, Hong-suk Kim, Sung-gil Kim, Phil-ouk Nam, Seul-ye Kim, Han-jin Lim, Jae-young Ahn
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Publication number: 20200266213Abstract: A semiconductor device includes a stack structure on a substrate, the stack structure including interlayer insulating layers and first gate electrodes alternately stacked on each other, a semiconductor layer in an opening penetrating through the stack structure, a first dielectric layer between the semiconductor layer and the stack structure, and a lower pattern closer to the substrate than to the first gate electrodes in the stack structure, the lower pattern including a first surface facing the first dielectric layer, and a second surface facing the stack structure, the second surface defining an acute angle with the first surface, wherein the first dielectric layer includes a first portion facing the stack structure, and a second portion facing the first surface of the lower pattern, the second portion having a thickness greater than a thickness of the first portion.Type: ApplicationFiled: May 8, 2020Publication date: August 20, 2020Inventors: Ji Hoon CHOI, Sung Gil KIM, Seulye KIM, Jung Ho KIM, Hong Suk KIM, Phil Ouk NAM, Jae Young AHN, Han Jin LIM
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Patent number: 10749722Abstract: A technology enabling a terminal to receive acknowledgement (ACK)/negative ACK (NACK) information about data transmitted from the terminal is provided. The method includes receiving cyclic shift information for a reference signal from the base station; transmitting, to the base station, the data and a reference signal which is cyclic-shifted using a cyclic shift value, the cyclic shift value being determined based on a dynamic cyclic shift value mapped one-to-one to the cyclic shift information for the reference signal; and receiving, from the base station, the ACK/NACK information about the transmitted data through a radio resource of a downlink channel, the radio resource of the downlink channel being identified based on a modifier mapped one-to-one to the cyclic shift information for the reference signal.Type: GrantFiled: October 30, 2018Date of Patent: August 18, 2020Assignee: Electronics and Telecommunications Research InstituteInventors: Taegyun Noh, Jae Young Ahn
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Publication number: 20200197391Abstract: The disclosure features macrocyclic compounds, alone and in combination with other therapeutic agents, as well as pharmaceutical compositions and protein complexes thereof, capable of modulating biological processes including RAS and RAS-RAF inhibition, and their uses in the treatment of cancers.Type: ApplicationFiled: December 20, 2019Publication date: June 25, 2020Inventors: Meizhong JIN, Nicholas PERL, Anna KOHLMANN, Ning YIN, Jason T. LOWE, Jae Young AHN, Mark Joseph MULVIHILL, Elena S. KOLTUN, Adrian L. GILL
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Patent number: 10651194Abstract: A semiconductor device includes a stack structure on a substrate, the stack structure including interlayer insulating layers and first gate electrodes alternately stacked on each other, a semiconductor layer in an opening penetrating through the stack structure, a first dielectric layer between the semiconductor layer and the stack structure, and a lower pattern closer to the substrate than to the first gate electrodes in the stack structure, the lower pattern including a first surface facing the first dielectric layer, and a second surface facing the stack structure, the second surface defining an acute angle with the first surface, wherein the first dielectric layer includes a first portion facing the stack structure, and a second portion facing the first surface of the lower pattern, the second portion having a thickness greater than a thickness of the first portion.Type: GrantFiled: September 26, 2018Date of Patent: May 12, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Ji Hoon Choi, Sung Gil Kim, Seulye Kim, Jung Ho Kim, Hong Suk Kim, Phil Ouk Nam, Jae Young Ahn, Han Jin Lim
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Patent number: 10608711Abstract: The present invention relates to a multi-input and multi-output communication method in a large-scale antenna system. An MIMO transmission method according to the present invention includes: obtaining statistical channel information on at least one terminal, dividing terminals into a plurality of classes and a plurality of groups based on the statistical channel information, wherein the groups depend on the classes; determining a group beam-forming matrix for each of the divided groups; performing a group beamforming transmission by group based on the group beam-forming matrix to obtain instantaneous channel information; and scheduling terminals based on the instantaneous channel information. Thus, it is possible to decrease the complexity in a scheduling and precoding calculation without an increase in the amount of wireless resources that are required for providing feedback for a reference signal and channel status information.Type: GrantFiled: April 3, 2017Date of Patent: March 31, 2020Assignee: Electronics and Telecommunications Research InstituteInventors: Jun Young Nam, Jae Young Ahn
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Patent number: 10600806Abstract: A stack structure includes conductive layer patterns and interlayer insulating layer patterns alternately stacked on one another. A channel hole penetrates the stack structure. A dielectric layer is disposed on a sidewall of the channel hole. A channel layer is disposed on the dielectric layer and in the channel hole. A passivation layer is disposed on the channel layer and in the channel hole. The channel layer is interposed between the passivation layer and the dielectric layer. An air gap is surrounded by the passivation layer. A width of the air gap is larger than a width of the passivation layer.Type: GrantFiled: July 1, 2019Date of Patent: March 24, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sung Gil Kim, Seul Ye Kim, Hong Suk Kim, Jin Tae Noh, Ji Hoon Choi, Jae Young Ahn
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Publication number: 20200053709Abstract: The method for transmitting control information in a mobile communication system includes: determining a control channel resource for transmitting control information by means of the data channel region; and transmitting the control information using the determined control channel resource. A capacity for control information, which increases for multiple user multiple-input multiple-out (MIMOs) in a heterogeneous network environment, for heterogeneous network interference control using carrier aggregation, for frequent use of a multicast-broadcast single frequency network (MBSFN) subframe, and for a CoMP transmission control, may be satisfied. Further, an adaptive resource allocation based on a requested capacity for control information may be enabled, and the efficient utilization of resources may also be enabled.Type: ApplicationFiled: October 22, 2019Publication date: February 13, 2020Applicant: Electronics and Telecommunications Research InstituteInventors: Bang-Won Seo, Young-Jo Ko, Tae-Gyun Noh, Jae-Young Ahn
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Patent number: 10559584Abstract: A semiconductor device including a dielectric layer is provided. The semiconductor device includes a stack structure, and a vertical structure within the stack structure. The vertical structure includes a lower region having a first width and an upper region having a second width, greater than the first width. The vertical structure further includes two dielectric layers of which respective ratios of lower thicknesses in the lower region to upper thicknesses in the upper region are different from each other.Type: GrantFiled: February 7, 2017Date of Patent: February 11, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Eun Yeoung Choi, Bio Kim, Young Wan Kim, Jung Ho Kim, Young Seon Son, Jae Young Ahn, Byong Hyun Jang
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Publication number: 20190386024Abstract: A vertical memory device includes a first structure having a lower semiconductor pattern structure filling a recess on a substrate and protruding from an upper surface of the substrate in a first direction substantially perpendicular to the upper surface of the substrate, the lower semiconductor pattern structure including a first undoped semiconductor pattern, a doped semiconductor pattern, and a second undoped semiconductor pattern sequentially stacked, and a lower surface of the doped semiconductor pattern being lower than the upper surface of the substrate, and an upper semiconductor pattern extending in the first direction on the lower semiconductor pattern structure, and a plurality of gate electrodes surrounding a sidewall of the first structure, the plurality of gate electrodes being at a plurality of levels, respectively, so as to be spaced apart from each other in the first direction.Type: ApplicationFiled: August 29, 2019Publication date: December 19, 2019Inventors: Joon-Suk LEE, Hong-Suk KIM, Jae-Young AHN, Han-Jin LIM
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Patent number: 10508121Abstract: Provided herein are compounds of Formula (A), (B), (C), (D) and (E), pharmaceutically acceptable salts, quaternary amine salts, and N-oxides thereof, and pharmaceutical compositions thereof. Compounds of Formula (A), (B), (C), (D), and (E) are contemplated useful as therapeutics for treating a wide variety of conditions, e.g., including but not limited to, conditions associated with angiogenesis and with CDK8 and/or CDK19 kinase activity. Further provided are methods of inhibiting CDK8 and/or CDK19 kinase activity, methods of modulating the ?-catenin pathway, methods of modulating STAT 1 activity, methods of modulating the TGF?/BMP pathway, methods of modulating HIF-1-alpha activity in a cell, and methods of increasing BIM expression to induce apoptosis, using a compound of Formula (A), (B), (C), (D), or (E). Further provided are CDK8 and CDK19 point mutants and methods of use thereof.Type: GrantFiled: March 5, 2019Date of Patent: December 17, 2019Assignee: President and Fellows of Harvard CollegeInventors: Matthew D. Shair, Juergen Ramharter, Henry Efrem Pelish, Brian Bor-Jen Liau, Jae Young Ahn
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Publication number: 20190341976Abstract: The present invention relates to a multi-input and multi-output communication method in a large-scale antenna system. An MIMO transmission method according to the present invention includes: obtaining statistical channel information on at least one terminal, dividing terminals into a plurality of classes and a plurality of groups based on the statistical channel information, wherein the groups depend on the classes; determining a group beam-forming matrix for each of the divided groups; performing a group beamforming transmission by group based on the group beam-forming matrix to obtain instantaneous channel information; and scheduling terminals based on the instantaneous channel information. Thus, it is possible to decrease the complexity in a scheduling and precoding calculation without an increase in the amount of wireless resources that are required for providing feedback for a reference signal and channel status information.Type: ApplicationFiled: July 11, 2019Publication date: November 7, 2019Applicant: Electronics and Telecommunications Research InstituteInventors: Jun Young NAM, Jae Young AHN
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Patent number: 10468431Abstract: A semiconductor device includes gate electrodes vertically stacked on a substrate, and channel holes passing through the gate electrodes to extend perpendicularly to the substrate and including a gate dielectric layer and a channel area. The gate dielectric layer may be formed of a plurality of layers, and at least one layer among the plurality of layers may have different thicknesses in different locations.Type: GrantFiled: July 5, 2018Date of Patent: November 5, 2019Assignee: Samsung Electronics Co., Ltd.Inventors: Jung Ho Kim, BiO Kim, Hyung Joon Kim, Young Seon Son, Su Jin Shin, Jae Young Ahn, Ju Mi Yun, HanMei Choi
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Patent number: 10462776Abstract: The method for transmitting control information in a mobile communication system includes: determining a control channel resource for transmitting control information by means of the data channel region; and transmitting the control information using the determined control channel resource. A capacity for control information, which increases for multiple user multiple-input multiple-out (MIMOs) in a heterogeneous network environment, for heterogeneous network interference control using carrier aggregation, for frequent use of a multicast-broadcast single frequency network (MBSFN) subframe, and for a CoMP transmission control, may be satisfied. Further, an adaptive resource allocation based on a requested capacity for control information may be enabled, and the efficient utilization of resources may also be enabled.Type: GrantFiled: November 15, 2017Date of Patent: October 29, 2019Assignee: Electronics and Telecommunications Research InstituteInventors: Bang-Won Seo, Young-Jo Ko, Tae-Gyun Noh, Jae-Young Ahn
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Publication number: 20190326321Abstract: A stack structure includes conductive layer patterns and interlayer insulating layer patterns alternately stacked on one another. A channel hole penetrates the stack structure. A dielectric layer is disposed on a sidewall of the channel hole. A channel layer is disposed on the dielectric layer and in the channel hole. A passivation layer is disposed on the channel layer and in the channel hole. The channel layer is interposed between the passivation layer and the dielectric layer. An air gap is surrounded by the passivation layer. A width of the air gap is larger than a width of the passivation layer.Type: ApplicationFiled: July 1, 2019Publication date: October 24, 2019Inventors: Sung Gil KIM, Seul Ye KIM, Hong Suk KIM, Jin Tae NOH, Ji Hoon CHOI, Jae Young AHN
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Patent number: 10453707Abstract: A method for fabricating a semiconductor device, the method including forming a mold structure on a substrate such that the mold structure includes alternately and repeatedly stacked interlayer insulating films and sacrificial films; forming a channel hole passing through the mold structure; forming a vertical channel structure within the channel hole; exposing a surface of the interlayer insulating films by removing the sacrificial films; forming an aluminum oxide film along a surface of the interlayer insulating films; forming a continuous film on the aluminum oxide film; and nitriding the continuous film to form a TiN film.Type: GrantFiled: October 24, 2017Date of Patent: October 22, 2019Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Yong Seok Cho, Hyung Joon Kim, Jung Ho Kim, Joong Yun Ra, Bi O Kim, Jae Young Ahn, Ki Yong Oh, Sung Hae Lee
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Publication number: 20190308745Abstract: The present invention provides a method of controlling an unmanned aerial vehicle by a system for controlling a mission of the unmanned aerial vehicle on the basis of a user position. Herein the method includes acquiring information related to a position of the terminal; performing authentication for the unmanned aerial vehicle on the basis of the information related to the position of the terminal; and, when the authentication is completed, transmitting the information related to the position of the terminal to the unmanned aerial vehicle.Type: ApplicationFiled: April 4, 2019Publication date: October 10, 2019Applicant: Electronics and Telecommunications Research Instit uteInventors: Myung Seok KI, Sang Hyouk CHOI, Yun Su BOK, Ji Hwan SON, Jeong Hwan LEE, Ji Hun CHA, Jae Young AHN
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Patent number: 10418374Abstract: A vertical memory device includes a plurality of stacked structures, at least one inter-structure layer, and a channel structure. The plurality of stacked structures comprises a plurality of gate electrodes and a plurality of insulation film patterns that are alternately and repeatedly stacked on a substrate. At least one inter-structure layer is positioned between the two stacked structures adjacent to each other from among the plurality of stacked structures. A channel structure penetrates the plurality of stacked structures and the at least one inter-structure layer, the channel structure extending in the first direction, the channel structure being connected to the substrate.Type: GrantFiled: January 4, 2017Date of Patent: September 17, 2019Assignee: Samsung Electronics Co., Ltd.Inventors: Eun-young Lee, Yong-hoon Son, Jae-young Ahn
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Patent number: 10403638Abstract: A vertical memory device includes a first structure having a lower semiconductor pattern structure filling a recess on a substrate and protruding from an upper surface of the substrate in a first direction substantially perpendicular to the upper surface of the substrate, the lower semiconductor pattern structure including a first undoped semiconductor pattern, a doped semiconductor pattern, and a second undoped semiconductor pattern sequentially stacked, and a lower surface of the doped semiconductor pattern being lower than the upper surface of the substrate, and an upper semiconductor pattern extending in the first direction on the lower semiconductor pattern structure, and a plurality of gate electrodes surrounding a sidewall of the first structure, the plurality of gate electrodes being at a plurality of levels, respectively, so as to be spaced apart from each other in the first direction.Type: GrantFiled: June 1, 2017Date of Patent: September 3, 2019Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Joon-Suk Lee, Hong-Suk Kim, Jae-Young Ahn, Han-Jin Lim
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Patent number: RE47793Abstract: Provided are a method of transmitting a dedicated reference signal (DRS), a method of receiving a DRS, and a feedback method of a terminal. The method of transmitting a DRS includes determining a DRS transmitting resource for at least one terminal which is a target of transmission, and transmitting the DRS using the determined transmission resource and notifying the terminal of information about layer used by the terminal. The method of receiving a DRS includes determining a DRS receiving resource, receiving information about layer used by a terminal from a serving cell base station, and receiving the DRS for the terminal using the determined reception resource and the information about layer. Accordingly, a terminal can find the position and sequence of its DRS. In particular, in the case of multi-user multiple input multiple output (MU-MIMO) or joint scheduling, it is possible to prevent or remove signal interference using the DRS of another terminal.Type: GrantFiled: March 16, 2017Date of Patent: December 31, 2019Assignee: Electronics and Telecommunications Research InstituteInventors: Young-Jo Ko, Jae Young Ahn, Bangwon Seo