Abstract: A method of plasma etching tungsten silicide over polysilicon particularly useful in fabricating flash memory having both a densely packed area and an open (iso) area requiring a long over etch due to microloading. Wafer biasing is decreased in the over etch. The principal etchant include NF3 and Cl2. Argon is added to prevent undercutting at the dense/iso interface. Oxygen and nitrogen oxidize any exposed silicon to increase etch selectivity and straightens the etch profile. SiCl4 may be added for additional selectivity.

Abstract: A method for forming a metal contact in a semiconductor device includes forming bit lines over a substrate defined into a cell region and a peripheral region, forming a first inter-layer dielectric (ILD) layer over the bit lines, forming a first etch stop layer over the first ILD layer, forming a capacitor in the cell region, forming a second etch stop layer over the substrate after the capacitor is formed, forming a second ILD layer over the second etch stop layer, performing a first etching process to etch portions of the second ILD layer and the second etch stop layer to thereby form first metal contact holes exposing the first etch stop layer, and performing a second etching process to etch portions of the first etch stop layer and the first ILD layer to thereby form second metal contact holes exposing the bit lines.

Abstract: A mounting system is adapted to couple to the back side of a flat panel monitor to adjust the viewing angle of the monitor. The mounting system includes a plurality of motorized arms that are communicably link to a processor. Based on an input signal from a remote control, the processor extends or retracts each of the plurality of motorized arms to adjust the viewing angle of the monitor.

Abstract: A liquid crystal display device includes first thin film transistor with a first polysilicon active layer in which a first channel area has first grain boundaries, wherein the first thin film transistor has a first channel direction different from a first grain boundary direction of the first grain boundaries, and a second thin film transistor with a second polysilicon active layer in which a second channel area has second grain boundaries, wherein the second thin film transistor has a second channel direction parallel to a second grain boundary direction of the second grain boundaries, wherein the first and second transistors have a substantially same electrical characteristic.

Abstract: Provided are a method for preparing a granular animal feed additive and the granular animal feed additive prepared by the method. The method includes: filtering, with a membrane filter, a fermentation broth obtained from a lysine producing microorganism cultured in a lysine producing condition to obtain a lysine-containing filtrate and a microorganism-containing sludge; drying the filtrate to obtain a concentrate with a total solid content of 48 to 52 wt %; granule-drying the concentrate at a temperature of 50° C. to 60° C.