Abstract: A semiconductor device may include a gate structure including stacked conductive layers and insulating regions disposed between the conductive layers; a channel layer extending through the gate structure; data storage patterns surrounding the channel layer and disposed between the channel layer and the conductive layers, respectively; oxidation patterns surrounding the channel layer and disposed between the channel layer and the insulating regions, respectively; and a blocking layer surrounding the data storage patterns and the oxidation patterns and including concave portions disposed to correspond to the insulating regions.

Abstract: The disclosure relates to a radar device and a control method. Specifically, according to the disclosure, a radar device comprises a transmitter controlling to transmit a frequency-modulated transmission signal, a receiver receiving a reception signal which is the transmitted transmission signal reflected by an object, an angle estimator estimating a first angle for a position of the object, with respect to a host vehicle, during one frame, based on a result obtained by performing fast Fourier transform (FFT) on the reception signal and estimating a second angle which is a virtual angle for the position of the object during a plurality of frames, and a controller calibrating the first angle by comparing the estimated first angle and the estimated second angle.

Abstract: The present invention provides: a porous adhesive film which is formed from an adhesive composition including (meth)acrylic copolymers having hydroxyl groups and alkylene glycol groups, and which has a modulus of less than approximately 30 kPa at 25° C. and a peel strength of approximately 700 gf/in or greater at 25° C.; an optical member comprising same; and an optical display device comprising same.

Abstract: One embodiment of the disclosure relates to a vehicle radar device and a method for controlling the same. According to the present embodiments, a vehicle radar device may comprise an antenna unit including Nt transmission antennas and Nr reception antennas, wherein Nt is a natural number equal to or larger than 1, and Nr is a natural number equal to or larger than 2, a transceiver controlling the transmission antenna to transmit a transmission signal and the reception antenna to receive a reception signal reflected by a target, a signal processor detecting one or more peak signals for the target and separately detecting Nt*Nr channel reception signals corresponding to each peak signal, a target angle estimator calculating a target angle estimate from k channel reception signals selected from among the Nt*Nr channel reception signals, and a target size information estimator calculating size information about the target based on up to NV*NrCk target angle estimates calculated by the target angle estimator.

Abstract: An evaporative cooler includes an external bar frame forming an outer body, a plurality of partition plates repeatedly arranged at intervals in a width direction of the external bar frame and separating a dry channel and a wet channel, and embossed portions protruding in a direction facing each other from the facing partition plates forming the wet channel among the plurality of partition plates.

Abstract: The embodiments of the present disclosure relate to a radar device including an antenna unit including a transmission antenna for transmitting a transmission signal and a receiving antenna for receiving a reception signal reflected from a target, a signal processor configured to determine target direction information by using a phase difference between the reception signals received from the respective receiving antennas, and a controller configured to control to perform a first mode and a second mode for transmitting and receiving signals at different pulse repetition intervals, respectively.

Abstract: An adhesive film has an average slope of about ?9.9 to about 0, as measured over a temperature range of about ?20° C. to about 80° C. in a graph depicting a temperature-dependent storage modulus distribution of the adhesive film where the x-axis represents temperature (° C.) and the y-axis represents storage modulus (kPa). The adhesive film also has a storage modulus at about 80° C. of about 10 kPa to about 1,000 kPa.

Abstract: A semiconductor device may include stacked first gate lines, stacked second gate lines, a channel structure extending through the first gate lines and the second gate lines, first contact plugs extending through the first gate lines and respectively connected to front surfaces of the first gate lines, and second contact plugs extending through the second gate lines and respectively connected to rear surfaces of the second gate lines.

Abstract: An electronic device includes a substrate, a source electrode layer and a drain electrode layer that are disposed to be spaced apart from each other over the substrate, a channel layer disposed between the source electrode layer and the drain electrode layer over the substrate, a proton conductive layer disposed on the channel layer, and a gate electrode layer disposed on the proton conductive layer.

Abstract: An electronic device includes a base element, a source electrode layer and a drain electrode layer disposed to be spaced apart from each other on the base element, a channel layer disposed between the source electrode layer and the drain electrode layer on the base element that accommodates metal ions, a metal ion conduction layer disposed on the channel layer, and a gate electrode layer disposed on the metal ion conduction layer. The channel layer includes a plurality of unit films and channel spaces between the plurality of unit films. The plurality of unit films are arranged to be parallel to a direction substantially perpendicular to a surface of the base element.

Abstract: An electronic device includes a substrate, a source electrode layer and a drain electrode layer that are disposed to be spaced apart from each other over the substrate, a channel layer that is capable of receiving hydrogen, disposed between the source electrode layer and the drain electrode layer over the substrate, a proton conductive layer disposed on the channel layer, a hydrogen source layer disposed on the proton conductive layer, and a gate electrode layer disposed on the hydrogen source layer.

Abstract: Provided are a connection tube and a condenser. The connection tube includes: multi-row tubes respectively connecting a flow path between a pair of header pipe assemblies disposed to be spaced apart from each other and including a plurality of header pipes disposed to be parallel to each other in a second direction, perpendicular to a first direction which is a length direction of the header pipe having the flow path formed therein and a plurality of connection holes formed in one surface.

Abstract: A semiconductor device according to an embodiment of the present disclosure includes a substrate, a gate structure disposed over the substrate, a dielectric structure disposed to contact a sidewall surface of the gate structure over the substrate, and a channel layer disposed on a sidewall surface of the dielectric structure over the substrate. The gate structure includes a gate electrode layer and an interlayer insulation structure which are alternately stacked. The interlayer insulation structure includes a metal-organic framework layer.

Abstract: A connection block facilitates connection between circular pipes with excellent fracture withstand pressure and has flow holes to allow fluid movement between pipes, a header connector connecting the connection block to a header pipe, and a condenser including of the same and a plurality of connection tubes in a plurality of rows. The connection block includes a first surface, a second surface spaced apart from the first surface, a pair of curved portions connecting ends of the first surface and ends of the second surface, and a plurality of flow holes penetrating through the curved portions, wherein the pair of curved portions have the same curvature in cross section, perpendicular to a longitudinal direction.

Abstract: Provided are an optical member and an optical display device comprising same, the optical member comprising a support layer and an optically functional layer laminated on one surface of the support layer, wherein: the optically functional layer includes a groove having inclined surfaces; at least one convex portion extending from the flat portion of the optically functional layer is formed at each of the inclined surfaces; the convex portion is a curved surface with a radius of curvature of 1 mm or greater, and each of the inclined surfaces satisfies expression 1.

Abstract: A nonvolatile memory device according to an embodiment includes a substrate, a resistance change layer disposed on the substrate, a gate electrode layers disposed on the resistance change layer, and a first electrode pattern layer and a second electrode pattern layer that are disposed in the substrate and contact different portions of the resistance change layer. The resistance change layer includes movable oxygen vacancies or movable metal ions.

Abstract: An adhesive film and a display member including the same are disclosed. The adhesive film is formed of an adhesive composition including: a copolymer of a monomer mixture including a hydroxyl group-containing (meth)acrylate and a comonomer; and nanoparticles. The adhesive film has a creep at ?20° C. of about 50 ?m to about 100 ?m and a gel fraction of about 50% to about 75%.

Abstract: A nonvolatile memory device includes a substrate having an upper surface, and a gate structure disposed over the substrate. The gate structure includes at least one gate electrode layer pattern and at least one gate insulation layer pattern, which are alternately stacked along a first direction perpendicular to the upper surface. The gate structure extends in a second direction perpendicular to the first direction. The nonvolatile memory device includes a ferroelectric layer disposed on at least a portion of one sidewall surface of the gate structure. The one sidewall surface of the gate structure forms a plane substantially parallel to the first and second directions. The nonvolatile memory device includes a channel layer disposed on the ferroelectric layer, and a source electrode structure and a drain electrode structure disposed to contact the channel layer and spaced apart from each other in the second direction.

Abstract: A nonvolatile memory device according to an embodiment includes a substrate, a resistance change layer disposed on the substrate, a gate electrode layers disposed on the resistance change layer, and a first electrode pattern layer and a second electrode pattern layer that are disposed in the substrate and contact different portions of the resistance change layer. The resistance change layer includes movable oxygen vacancies or movable metal ions.

Abstract: A semiconductor memory device includes a channel layer, a gate electrode spaced apart from the channel layer, a blocking insulating layer between the gate electrode and the channel layer, a tunnel insulating layer between the channel layer and the blocking insulating layer, and nano-particles spaced apart from each other between the tunnel insulating layer and the blocking insulating layer.