Abstract: Embodiments relate to a porous polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors and a process for preparing the same. According to the embodiments, the size and distribution of the plurality of pores contained in the porous polishing pad can be adjusted in light of the volume thereof. Thus, the plurality of pores have an apparent volume-weighted average pore diameter in a specific range, thereby providing a porous polishing pad that is excellent in such physical properties as polishing rate and the like.

Abstract: Embodiments relate to a leakage-proof polishing pad for use in a chemical mechanical planarization (CMP) process and a process for producing the same.

Abstract: The embodiments relate to a porous polyurethane polishing pad and a process for preparing a semiconductor device by using the same. The porous polyurethane polishing pad comprises a urethane-based prepolymer and a curing agent, and has a thickness of 1.5 to 2.5 mm, a number of pores whose average diameter is 10 to 60 ?m, a specific gravity of 0.7 to 0.9 g/cm3, a surface hardness at 25° C. of 45 to 65 Shore D, a tensile strength of 15 to 25 N/mm2, an elongation of 80 to 250%, an AFM (atomic force microscope) elastic modulus of 101 to 250 MPa measured from a polishing surface in direct contact with an object to be polished to a predetermined depth wherein the predetermined depth is 1 to 10 ?m.

Abstract: The embodiments relate to a porous polyurethane polishing pad and a process for preparing a semiconductor device by using the same. The porous polyurethane polishing pad comprises a urethane-based prepolymer and a curing agent, and has a thickness of 1.5 to 2.5 mm, a number of pores whose average diameter is 10 to 60 ?m, a specific gravity of 0.7 to 0.9 g/cm3, a surface hardness at 25° C. of 45 to 65 Shore D, a tensile strength of 15 to 25 N/mm2, an elongation of 80 to 250%, an AFM (atomic force microscope) elastic modulus of 30 to 100 MPa measured from a polishing surface in direct contact with an object to be polished to a predetermined depth wherein the predetermined depth is 1 to 10 ?m.