Abstract: A capacitor component includes a body including dielectric layers, first and second internal electrodes, laminated in a first direction, facing each other, and first and second cover portions, disposed on outermost portions of the first and second internal electrodes, and first and second external electrodes, respectively disposed on both external surfaces of the body in a second direction, perpendicular to the first direction, and respectively connected to the first and second internal electrodes. An indentation including a glass is disposed at at least one of boundaries between the first internal electrodes and the first external electrode or one of boundaries between the second internal electrodes and the second external electrode.

Abstract: The present disclosure relates to a sodium-ion storage material and an electrode material for a sodium-ion battery, an electrode material for a seawater battery, an electrode for a sodium-ion battery, an electrode for a seawater battery, a sodium-ion battery, and a seawater battery, which include the sodium-ion storage material. Specifically, the sodium-ion storage material may include one or more materials selected from the group consisting of CuxS, FeS, FeS2, Ni3S, NbS2, SbOx, SbSx, SnS and SnS2, wherein 0<x?2. When the sodium-ion storage material according to the present disclosure is used, it may exhibit high discharge capacity, and when the sodium-ion storage material is applied to a sodium-ion battery which is a secondary battery, it may exhibit excellent charge/discharge cycle characteristics.

Abstract: The present disclosure relates to a sodium-ion storage material including a doped compound, and an electrode material for a sodium-ion battery, an electrode for a sodium-ion battery, and a sodium-ion battery, which include the sodium-ion storage material. Specifically, the sodium-ion storage material may include a compound consisting of an Na3V2-xMx(PO4)2F3/Na3V2-yMy(PO4)3 composite (M=Fe, Mn, Cr, Cu, Zn or Ti, 0<x,y?2). When the sodium-ion storage material according to the present disclosure is used, it may maintain high discharge capacity while reducing the vanadium content, and when the sodium-ion storage material is applied to a sodium-ion secondary battery or a sodium-magnesium hybrid-ion battery, the battery may exhibit excellent charge/discharge cycle characteristics.

Abstract: An apparatus for constructing a library for deriving a material composition using empirical result, which enables acceleration of research on the material-properties relationship. By applying the empirical results of the material composition, missing data of the material compositions can be statistically calculated by using supervised non-linear imputation techniques. The completed composition information of the materials is passed as an input of machine learning material-properties relationship prediction.

Abstract: The present disclosure relates to a sodium-ion storage material and an electrode material for a sodium-ion battery, an electrode material for a seawater battery, an electrode for a sodium-ion battery, an electrode for a seawater battery, a sodium-ion battery, and a seawater battery, which include the sodium-ion storage material. Specifically, the sodium-ion storage material may include one or more materials selected from the group consisting of CuxS, FeS, FeS2, Ni3S, NbS2, SbOx, SbSx, SnS and SnS2, wherein 0<x?2. When the sodium-ion storage material according to the present disclosure is used, it may exhibit high discharge capacity, and when the sodium-ion storage material is applied to a sodium-ion battery which is a secondary battery, it may exhibit excellent charge/discharge cycle characteristics.

Abstract: Embodiments relate generally to semiconductor device fabrication and processes, and more particularly, to systems and methods that implement magnetic field generators configured to generate rotating magnetic fields to facilitate physical vapor deposition (“PVD”). In one embodiment, a system generates a first portion of a magnetic field adjacent a first circumferential portion of a substrate, and can generate a second portion of the magnetic field adjacent to a second circumferential portion of the substrate. The second circumferential portion is disposed at an endpoint of a diameter that passes through an axis of rotation to another endpoint of the diameter at which the first circumferential portion resides. The second peak magnitude can be less than the first peak magnitude. The system rotates the first and second portions of the magnetic fields to decompose a target material to form a plasma adjacent the substrate. The system forms a film upon the substrate.

Abstract: Embodiments relate generally to semiconductor device fabrication and processes, and more particularly, to an apparatus and arrangements of magnetic field generators configured to generate rotating magnetic fields to facilitate physical vapor deposition (“PVD”). In one embodiment, a magnetic field generator apparatus can include a rotatable magnetic field and a counterbalance magnetic field generator that rotates about the axis of rotation in opposition to the rotatable magnetic field generator. The rotatable magnetic field generator generates a first magnitude of a magnetic field adjacent to a first circumferential portion of a circular region. The counterbalance magnetic field generator generates a second magnitude of the magnetic field adjacent to a second circumferential portion.

Abstract: Embodiments of the invention relate generally to semiconductor device fabrication and processes, and more particularly, to an apparatus and a system for implementing arrangements of magnetic field generators configured to facilitate physical vapor deposition (“PVD”) and/or controlling impedance matching associated with a non-metal-based plasma used to modify a non-metal film, such as a chalcogenide-based film.

Abstract: Embodiments of the invention relate generally to semiconductor device fabrication and processes, and more particularly, to methods for implementing arrangements of magnetic field generators configured to facilitate physical vapor deposition (“PVD”) and/or for controlling impedance matching associated with a non-metal-based plasma used to modify a non-metal film, such as a chalcogenide-based film.

Abstract: Embodiments relate generally to semiconductor device fabrication and processes, and more particularly, to systems and methods that implement magnetic field generators configured to generate rotating magnetic fields to facilitate physical vapor deposition (“PVD”). In one embodiment, a system generates a first portion of a magnetic field adjacent a first circumferential portion of a substrate, and can generate a second portion of the magnetic field adjacent to a second circumferential portion of the substrate. The second circumferential portion is disposed at an endpoint of a diameter that passes through an axis of rotation to another endpoint of the diameter at which the first circumferential portion resides. The second peak magnitude can be less than the first peak magnitude. The system rotates the first and second portions of the magnetic fields to decompose a target material to form a plasma adjacent the substrate. The system forms a film upon the substrate.

Abstract: Embodiments of the invention relate generally to semiconductor device fabrication and processes, and more particularly, to an apparatus and a system for implementing arrangements of magnetic field generators configured to facilitate physical vapor deposition (“PVD”) and/or controlling impedance matching associated with a non-metal-based plasma used to modify a non-metal film, such as a chalcogenide-based film.

Abstract: Embodiments of the invention relate generally to semiconductor device fabrication and processes, and more particularly, to methods for implementing arrangements of magnetic field generators configured to facilitate physical vapor deposition (“PVD”) and/or for controlling impedance matching associated with a non-metal-based plasma used to modify a non-metal film, such as a chalcogenide-based film.

Abstract: Embodiments relate generally to semiconductor device fabrication and processes, and more particularly, to an apparatus and arrangements of magnetic field generators configured to generate rotating magnetic fields to facilitate physical vapor deposition (“PVD”). In one embodiment, a magnetic field generator apparatus can include a rotatable magnetic field and a counterbalance magnetic field generator that rotates about the axis of rotation in opposition to the rotatable magnetic field generator. The rotatable magnetic field generator generates a first magnitude of a magnetic field adjacent to a first circumferential portion of a circular region. The counterbalance magnetic field generator generates a second magnitude of the magnetic field adjacent to a second circumferential portion.

Abstract: Embodiments relate generally to semiconductor device fabrication and processes, and more particularly, to systems and methods that implement magnetic field generators configured to generate rotating magnetic fields to facilitate physical vapor deposition (“PVD”). In one embodiment, a system generates a first portion of a magnetic field adjacent a first circumferential portion of a substrate, and can generate a second portion of the magnetic field adjacent to a second circumferential portion of the substrate. The second circumferential portion is disposed at an endpoint of a diameter that passes through an axis of rotation to another endpoint of the diameter at which the first circumferential portion resides. The second peak magnitude can be less than the first peak magnitude. The system rotates the first and second portions of the magnetic fields to decompose a target material to form a plasma adjacent the substrate.

Abstract: The present invention relates to an elliptical unit block for preparing a core using soft magnetic metal powder and a core with excellent high current DC bias characteristics using the same, and more specifically, to an elliptical unit block for preparing a core using soft magnetic metal powder used in an inductor for an automotive electronic sub-assembly using a high current buck or boost inductor or a three phase line reactor or fuel cell system for power factor correction (PFC), and a powered magnetic core prepared using the same.

Abstract: Embodiments relate generally to semiconductor device fabrication and processes, and more particularly, to an apparatus and a system that regulates the amount of thermal energy in a semiconductor processing chamber during semiconductor device fabrication and processes. In one embodiment, an apparatus includes a cavity environment controller and a pedestal temperature controller coupled to a semiconductor processing chamber. The pedestal temperature controller is configured to regulate the temperature of the semiconductor processing chamber through a pedestal disposed at the bottom of the semiconductor processing chamber.

Abstract: Embodiments relate generally to semiconductor device fabrication and processes, and more particularly, to an apparatus and a system that regulates the amount of thermal energy in a semiconductor processing chamber during semiconductor device fabrication and processes. In one embodiment, an apparatus includes a cavity environment controller and a pedestal temperature controller coupled to a semiconductor processing chamber. The cavity environment controller is configured to regulate the temperature of the semiconductor processing chamber through a fluid in a source cavity disposed at the top of the semiconductor processing chamber.

Abstract: A photoresist-coating apparatus includes a substrate on which a particle-detecting area and an invalid particle-detecting area are defined, a nozzle discharging photoresist to the substrate and moving along a direction, and a particle-detecting sensor controlling on and off of the nozzle in the particle-detecting area according to presence of particles, wherein in the invalid particle-detecting area, the nozzle operates independently from detection of the particle-detecting sensor.

Abstract: A photoresist-coating apparatus includes a substrate on which a particle-detecting area and an invalid particle-detecting area are defined, a nozzle discharging photoresist to the substrate and moving along a direction, and a particle-detecting sensor controlling on and off of the nozzle in the particle-detecting area according to presence of particles, wherein in the invalid particle-detecting area, the nozzle operates independently from detection of the particle-detecting sensor.

Abstract: A photoresist-coating apparatus includes a substrate on which a particle-detecting area and an invalid particle-detecting area are defined, a nozzle discharging photoresist to the substrate and moving along a direction, and a particle-detecting sensor controlling on and off of the nozzle in the particle-detecting area according to presence of particles, wherein in the invalid particle-detecting area, the nozzle operates independently from detection of the particle-detecting sensor.