Abstract: The present invention provides systems and methods for ambulatory, long term monitoring of a physiological signal from a patient. At least a portion of the systems of the present invention may be implanted within the patient in a minimally invasive manner. In preferred embodiments, brain activity signals are sampled from the patient with an externally powered leadless implanted device and are transmitted to a handheld patient communication device for processing to estimate the patient's propensity for a seizure.

Abstract: A Schottky junction diode device having improved performance is fabricated in a conventional CMOS process. A substrate including a material doped to a first conductivity type is formed. A first well is disposed over the substrate. The first well includes a material doped to a second conductivity type opposite that of the first conductivity type. A region of metal-containing material is disposed over the first well to form a Schottky junction at an interface between the region of metal-containing material and the first well. In one embodiment, a first well contact is disposed in a portion of the first well. A second well is disposed over the substrate wherein the second well includes a material doped to the first conductivity type. In one embodiment, the first well and the second well are not in direct contact with one another.

Abstract: A Schottky junction diode device having improved performance and a multiple well structure is fabricated in a conventional CMOS process. A substrate including a material doped to a first conductivity type is formed. A first well is disposed over the substrate. The first well includes a material doped differently, such as to a second conductivity type opposite that of the first conductivity type. A second well is disposed within the first well. A region of metal-containing material is disposed in the second well to form a Schottky junction at an interface between the region of metal-containing material and the second well. In one embodiment, a second well contact is disposed in a portion of the second well.

Abstract: A method of fabricating a transistor includes providing a semiconductor substrate having a surface and forming a nitride layer outwardly of the surface of the substrate. The nitride layer is oxidized to form a nitrided silicon oxide layer comprising an oxide layer beneath the nitride layer. A high-K layer is deposited outwardly of the nitride layer, and a conductive layer is formed outwardly of the high-K layer. The conductive layer, the high-K layer, and the nitrided silicon oxide layer are etched and patterned to form a gate stack. Sidewall spacers are formed outwardly of the semiconductor substrate adjacent to the gate stack, and source/drain regions are formed in the semiconductor substrate adjacent to the sidewall spacers.

Abstract: A method of fabricating a transistor includes providing a semiconductor substrate having a surface and forming a nitride layer outwardly of the surface of the substrate. The nitride layer is oxidized to form a nitrided silicon oxide layer comprising an oxide layer beneath the nitride layer. A high-K layer is deposited outwardly of the nitride layer, and a conductive layer is formed outwardly of the high-K layer. The conductive layer, the high-K layer, and the nitrided silicon oxide layer are etched and patterned to form a gate stack. Sidewall spacers are formed outwardly of the semiconductor substrate adjacent to the gate stack, and source/drain regions are formed in the semiconductor substrate adjacent to the sidewall spacers.

Abstract: A method of fabricating a transistor includes providing a semiconductor substrate having a surface and forming a nitride layer outwardly of the surface of the substrate. The nitride layer is oxidized to form a nitrided silicon oxide layer comprising an oxide layer beneath the nitride layer. A high-K layer is deposited outwardly of the nitride layer, and a conductive layer is formed outwardly of the high-K layer. The conductive layer, the high-K layer, and the nitrided silicon oxide layer are etched and patterned to form a gate stack. Sidewall spacers are formed outwardly of the semiconductor substrate adjacent to the gate stack, and source/drain regions are formed in the semiconductor substrate adjacent to the sidewall spacers.

Abstract: A method for forming planar isolation structures for integrated circuits. A etch barrier is formed over the isolation fill material and an etch back is performed to remove material above unetched portions of the substrate. The exposed fill material is etched and planarized to form a planar isolation structure.

Abstract: Oxides of multiple thicknesses are made by selectively heating the wafer with a laser beam at the locations where enhanced oxide growth is desired.

Abstract: A method of forming a poly-silicide gate electrode (102). The polysilicon deposition is broken into two steps. After the first polysilicon layer (102a) is formed, a very thin oxide (102b) is formed thereover. Polysilicon deposition then continues to form a second polysilicon layer (102c). The oxide layer (102b) inhibits grain growth resulting in a smaller grain size for the second polysilicon layer (102c). Prior to silicide formation, a pre-amorphization implant is performed to amorphize the second polysilicon layer (102c) and possibly some of the first polysilicon layer (102a) as well. Titanium is deposited and reacted with the polysilicon layers to form a silicide. The silicide process consumes the interface between polysilicon layers (102a & 102c) and possibly a portion of the first polysilicon layer (102a). The resulting silicide layer has a more uniform sheet resistance.