Abstract: A conductive structure for use in a semiconductor device includes a multilayer structure. A first layer includes a material containing silicon, e.g., polysilicon and silicon germanide. A barrier layer is formed over the first layer, with the barrier layer including metal silicide or metal silicide nitride. A top conductive layer is formed over the barrier layer. The top conductive layer can include metal or metal suicide. Selective oxidation can be performed to reduce the amount of oxidation of selected materials in a structure containing multiple layers, such as the multilayer conductive structure. The selective oxidation is performed in a single-wafer rapid thermal processing system, in which a selected ambient, including hydrogen, is used to ensure low oxidation of a selected material, such as tungsten or a metal nitride.

Abstract: A conductive structure for use in a semiconductor device includes a multilayer structure. A first layer includes a material containing silicon, e.g., polysilicon and silicon germanide. A barrier layer is formed over the first layer, with the barrier layer including metal silicide or metal silicide nitride. A top conductive layer is formed over the barrier layer. The top conductive layer can include metal or metal silicide. Selective oxidation can be performed to reduce the amount of oxidation of selected materials in a structure containing multiple layers, such as the multi-layer conductive structure. The selective oxidation is performed in a single-wafer rapid thermal processing system, in which a selected ambient, including hydrogen, is used to ensure low oxidation of a selected material, such as tungsten or a metal nitride.

Abstract: A conductive structure for use in a semiconductor device includes a multilayer structure. A first layer includes a material containing silicon, e.g., polysilicon and silicon germanide. A barrier layer is formed over the first layer, with the barrier layer including metal silicide or metal silicide nitride. A top conductive layer is formed over the barrier layer. The top conductive layer can include metal or metal silicide. Selective oxidation can be performed to reduce the amount of oxidation of selected materials in a structure containing multiple layers, such as the multilayer conductive structure. The selective oxidation is performed in a single-wafer rapid thermal processing system, in which a selected ambient, including hydrogen, is used to ensure low oxidation of a selected material, such as tungsten or a metal nitride.

Abstract: A method of chemical vapor depositing a titanium nitride layer on a semiconductor wafer within a chemical vapor deposition reactor includes: a) positioning a wafer within a chemical vapor deposition reactor; b) injecting gaseous TiCl.sub.4, NH.sub.3 and N.sub.2 to within the reactor; and c) maintaining the reactor at a selected pressure and a selected temperature which are effective for reacting the TiCl.sub.4 and NH.sub.3 to deposit a uniform film comprising titanium nitride on the wafer, the selected temperature being less than or equal to about 500.degree. C. With a TiN film outwardly exposed, a wafer is annealed by the sequential steps of, a) rapid thermal processing the wafer having the outwardly exposed TiN film to a temperature from about 580.degree. C. to about 700.degree. C.; b) exposing the wafer to NH.sub.3 gas at a temperature from about 580.degree. C. to about 700.degree. C.

Abstract: Siloxanyl-phosphate mixtures are prepared by reacting cyclopolydimethylsiloxane and a silylphosphate mixture. The siloxanyl-phosphate mixture is a mixture of 5 to 30 weight percent of a monosiloxanyl-phosphate of the formula ##STR1## 70 to 85 weight percent of a disiloxanyl-phosphate of the formula ##STR2## 2 to 11 weight percent of a trisiloxanyl-phosphate of the formula wherein x has an average value of from 3 to 30.These siloxanyl-phosphate mixtures are useful in stabilizing basic polymerization catalyst such as potassium hydroxide or potassium silanolate and can either be used effectively per se or in combination with carbon dioxide.

Abstract: A position monitoring device for accurately determining a plurality of distances, velocity or acceleration along a line using a plurality of electromagnets. The position monitoring device includes an ultrasound transducer disposed along a line, an ultrasound generator to provide an ultrasound wave pulse along the ultrasound transducer and a plurality of electromagnets disposed along the line at selected positions. The electromagnets generate a magnetic field which interacts with the ultrasound pulse to generate a reflected pulse. A sensor measures the time lapse between generation of the initial pulse and receipt of the reflected pulse, and electronic components convert the time lapse interval to a position measurement.

Abstract: Silylphosphate mixtures are prepared by slowly adding phosphoric acid to hexamethyldisiloxane under reflux while removing the by-produced water and after the phosphoric acid is added, the temperture is increased to from 150.degree. C. to 170.degree. C. to recover the silylphosphate mixture residue. The mixture has from 10 to 30 weight percent of a monosilyl phosphate of the formula{(CH.sub.3).sub.3 SiO}(HO).sub.2 P.dbd.O,65 to 85 weight percent of a disilyl phosphate of the formula{(CH.sub.3).sub.3 SiO}.sub.2 (HO)P.dbd.O,and 2 to 7 weight percent of a trisilyl phosphate of the formula{(CH.sub.3).sub.3 SiO}.sub.3 P.dbd.O.These silylphosphate mixtures are useful in stabilizing basic polymerization catalyst such as potassium hydroxide or potassium silanolate and can either be used effectively per se or in combination with carbon dioxide.

Abstract: A suspendable folder is disclosed having a front panel and a back panel with their bottom edges and a segment of each of their lateral edges secured to one another. A segment of each pair of lateral edges secured to one another is defined by two points, the first of which is near the bottom edge of each panel. The second, upper point is spaced from the first point by a distance preferably selected from the range of approximately one half to two thirds the height of the back panel. At or near the second upper point, a circular radius cut is provided to assist in distributing tearing forces across a large area of both the front panel and back panel. At least one transverse score line is also provided above the radius cut in the front panel to permit easier opening and closing of the folder without tearing.

Abstract: A plurality of magnetic elevator devices disposed along the sides of a vertical stack of magnetizable steel objects, such as sheets or rods, separates them and raises the uppermost one vertically. Sensing devices in a control system sense when the object reaches a transport position and actuate a transport mechanism to move to another location. Each magnetic elevator device comprises a magnetic structure (permanent magnet or electro-magnet) and a pair of elongated, vertically extending, laterally spaced apart contact rails of opposite magnetic polarity which engage the edges of the stacked objects. Each contact rail comprises a magnetic portion having a point of minimum reluctance near its top and a non-magnetic, low-friction surface portion (plastic or stainless steel) which slidably engages each object to guide it and to hold it spaced from the magnetic portion.

Abstract: A transport and stacker system in which the articles being transported are propelled in their path of travel by the moving magnetic field of a linear induction motor. The magnetic field also functions to attract the moving articles toward the linear motor and in order to overcome this attracting force and air bearing is provided. The air pressure acting against the attracting force is just sufficient to move the articles a slight distance away from the linear induction motor so that the articles move in the path of travel while suspended in air out of contact with the physical surface of the motor. When the desired position is reached, the article is dropped on a stack by deenergizing the magnetic field.

Abstract: Apparatus for absorbing solar energy including a plurality of energy absorbing members, said energy absorbing members being arranged substantially parallel to and closely adjacent to each other in a row, each energy absorbing member including a mass of solar energy absorbing material extending substantially to the edges thereof, insulating material disposed on one side of the energy absorbing material, sealing members disposed between adjacent energy absorbing members, mechanism for moving the energy absorbing members from an energy absorbing position to an energy radiating position.