Abstract: A drinking container with an integrated valve that uses surface tension to control the flow of fluid.

Abstract: A drinking container with an integrated valve that uses surface tension to control the flow of fluid.

Abstract: Embodiments disclosed herein describe systems and methods for a drinking container with an integrated valve that uses surface tension to control the flow of fluid.

Abstract: A rotating control device (RCD) for use with a drilling unit includes a body having a flange formed at an end thereof for coupling to the drilling unit; a seal assembly for receiving and sealing against a tubular; a bearing assembly for supporting rotation of the seal assembly relative to the body; a releasable connection connecting the bearing assembly to the body; a transmitting assembly rotatable with the seal assembly; and a receiving assembly attached to a non-rotating portion of the RCD.

Abstract: The present invention generally relates to an apparatus and a method of transmitting data from a rotating control device. In one aspect, a method of transmitting data from a rotating control device coupled to an offshore drilling unit is provided. The method includes the step of generating data relating to a parameter associated with the rotating control device. The method further includes the step of transmitting the data from a transmitting assembly coupled to the rotating control device to a receiving assembly positioned proximate the transmitting assembly. Additionally, the method includes the step of transmitting the data from the receiving assembly to the offshore drilling unit. In another aspect, a data gathering and transmitting system for use with a rotating control device coupled to an offshore drilling unit is provided. In a further aspect, a method for transmitting data generated in a rotating control device coupled to a riser is provided.

Abstract: The present invention generally relates to an apparatus and a method of transmitting data from a rotating control device. In one aspect, a method of transmitting data from a rotating control device coupled to an offshore drilling unit is provided. The method includes the step of generating data relating to a parameter associated with the rotating control device. The method further includes the step of transmitting the data from a transmitting assembly coupled to the rotating control device to a receiving assembly positioned proximate the transmitting assembly. Additionally, the method includes the step of transmitting the data from the receiving assembly to the offshore drilling unit. In another aspect, a data gathering and transmitting system for use with a rotating control device coupled to an offshore drilling unit is provided. In a further aspect, a method for transmitting data generated in a rotating control device coupled to a riser is provided.

Abstract: The instant invention concerns Francisella bacteria mediated degradation of alkaline phosphatase (AP). Detection of AP degradation may be used to determine the presence of Francisella bacteria in a sample. Furthermore, methods for identifying and treating Francisella infections by detecting AP degradation are described. Methods of the invention also concerns methods for treating Francisella infection by inhibiting AP degradation.

Abstract: The present invention generally relates to an apparatus and a method of transmitting data from a rotating control device. In one aspect, a method of transmitting data from a rotating control device coupled to an offshore drilling unit is provided. The method includes the step of generating data relating to a parameter associated with the rotating control device. The method further includes the step of transmitting the data from a transmitting assembly coupled to the rotating control device to a receiving assembly positioned proximate the transmitting assembly. Additionally, the method includes the step of transmitting the data from the receiving assembly to the offshore drilling unit. In another aspect, a data gathering and transmitting system for use with a rotating control device coupled to an offshore drilling unit is provided. In a further aspect, a method for transmitting data generated in a rotating control device coupled to a riser is provided.

Abstract: A system, method and apparatus for transferring heat are disclosed. They make use of the first receptacle having an inlet for ingress of the first liquid, such as sewage, and an outlet for egress of the first liquid. Also provided is a second receptacle having an inlet for ingress of the second liquid, such as exhausted heated water from an air conditioning or cooling unit, and an outlet for egress of the second liquid. The second receptacle comprises a portion located in a proximity of the first receptacle. The first and second receptacles are arranged such that they allow a quantity of heat to transfer from the second liquid to the first liquid. The apparatus may be configured for inline connection to a sewerage main.

Abstract: The instant invention concerns Francisella bacteria mediated degradation of alkaline phosphatase (AP). Detection of AP degradation may be used to determine the presence of Francisella bacteria in a sample. Furthermore, methods for identifying and treating Francisella infections by detecting AP degradation are described. Methods of the invention also concerns methods for treating Francisella infection by inhibiting AP degradation.

Abstract: Compounds useful as inhibitors of PDE4 in the treatment of diseases regulated by the activation and degranulation of eosinophils, especially asthma, chronic bronchitis, and chronic obstructive pulmonary disease, of Formula (1.0.0): wherein R5 and R6 are taken together to form a moiety of partial Formulas (1.1.1) through (1.1.5): or a pharmaceutically acceptable salt thereof.

Abstract: A system for assessing underwater biomass that comprises a frame that can float and hold the system on a body of water; a transducer that emits and receives wave signals; a motor box, that positions the transducer below a water line; a control unit to allow a user to operate the system and view results obtained from the system; an electronics housing that receives a CPU board that communicates with and relays information to and from, the control unit; and a communication device to facilitate communication between the control unit and the CPU board.

Abstract: A method for improving high-? gate dielectric film (104) properties. The high-? film (104) is subjected to a two step anneal sequence. The first anneal is performed in a reducing ambient (106) with low partial pressure of oxidizer to promote film relaxation and increase by-product diffusion and desorption. The second anneal is performed in an oxidizing ambient (108) with a low partial pressure of reducer to remove defects and impurities.

Abstract: Forming metal gate transistors that have different work functions is disclosed. In one example, a first metal, which is a ‘mid gap’ metal, is manipulated in first and second regions by second and third metals, respectively, to move the work function of the first metal in opposite directions in the different regions. The resulting work functions in the different regions correspond to that of different types of the transistors that are to be formed.

Abstract: The present invention facilitates semiconductor fabrication by maintaining shape and density of an etch stop layer (206) during trench fill operations. The shape and density of the etch stop layer (206) is maintained by forming a protective alloy liner layer (310) on the etch stop layer (206) prior to trench fill operations. The protective alloy liner (310) is comprised of an alloy that is resistant to materials employed in the trench fill operations. As a result, clipping and/or damage to the etch stop layer (206) is mitigated thereby facilitating a subsequent planarization process that employs the etch stop layer (206). Additionally, selection of thickness and composition (1706) of the formed protective alloy (310) yields a stress amount and type (1704) that is applied to channel regions of unformed transistor devices, ultimately providing for an improvement in channel mobility.

Abstract: The present invention facilitates semiconductor fabrication by providing methods of fabrication that selectively form high-k dielectric layers within NMOS regions. An I/O dielectric layer is formed in core and I/O regions of a semiconductor device (506). The I/O dielectric layer is removed (508) from the core region of the device. A core dielectric layer is formed in the core region (510). A barrier layer is deposited and patterned to expose the NMOS devices of the core region (512). The core dielectric layer is removed from the core NMOS devices (514). A high-k dielectric layer is formed (514) over the core and I/O regions. Then, the high-k dielectric layer is removed (512) from PMOS regions/devices of the core region and the NMOS and PMOS regions/devices of the I/O region.

Abstract: Dual gate dielectric layers are formed on a semiconductor substrate for MOS transistor fabrication. A first dielectric layer (30) is formed on a semiconductor substrate (10). A first plasma nitridation process is performed on said first dielectric layer. The first dielectric layer (30) is removed in regions of the substrate and a second dielectric layer (50) is formed in these regions. A second plasma nitridation process is performed on the first dielectric layer and the second dielectric. MOS transistors (160, 170) are then fabricated using the dielectric layers (30, 50).

Abstract: Methods are disclosed for treating deposited gate dielectric materials, in which the deposited dielectric is subjected to one or more non-oxidizing anneals to densify the material, one or more oxidizing anneals to mitigate material defects, and to a nitridation process to introduce nitrogen into the gate dielectric. The annealing may be performed before and/or after the nitridation to mitigate deposition and/or nitridation defects and to densify the material while mitigating formation of unwanted low dielectric constant oxides at the interface between the gate dielectric and the semiconductor substrate.

Abstract: Methods are disclosed for treating deposited gate dielectric materials, in which the deposited dielectric is subjected to one or more non-oxidizing anneals to densify the material, one or more oxidizing anneals to mitigate material defects, and to a nitridation process to introduce nitrogen into the gate dielectric. The annealing may be performed before and/or after the nitridation to mitigate deposition and/or nitridation defects and to densify the material while mitigating formation of unwanted low dielectric constant oxides at the interface between the gate dielectric and the semiconductor substrate.

Abstract: Forming metal gate transistors that have different work functions is disclosed. In one example, a first metal, which is a ‘mid gap’ metal, is manipulated in first and second regions by second and third metals, respectively, to move the work function of the first metal in opposite directions in the different regions. The resulting work functions in the different regions correspond to that of different types of the transistors that are to be formed.