Abstract: A system and method for reducing repairs to radial seals used in a rotating control head used while drilling is disclosed. Also, a system and method to detect leaks in the rotating control head and a latching system to latch the rotating control head to a housing is disclosed.

Abstract: A system and method for manufacturing semiconductor devices with dielectric layers having a dielectric constant greater than silicon dioxide includes depositing a dielectric layer on a substrate and subjecting the dielectric layer to a plasma to reduce top surface roughness in the dielectric layer.

Abstract: A latch assembly is connectable to a riser. A rotating control device can be positioned with the riser, sealing the rotating control device with the latch assembly and removably latching the rotating control device to the latch assembly and to the riser. The latch assembly can be remotely actuated. The latch assembly can provide an auxiliary safety mechanism to provide a backup actuation mechanism to unlatch the rotating control device from the latch assembly. The latch assembly can be bolted to the riser. Alternately, the latch assembly can be latched with the riser using a similar latching mechanism as used to latch the latch assembly to the rotating control device. A pressure transducer protector assembly can protect a transducer for monitoring wellbore pressure in the riser. A remote indicator panel can indicate the status of the latch assembly.

Abstract: A holding member provides for releasably positioning a rotating control head assembly in a subsea housing. The holding member engages an internal formation in the subsea housing to resist movement of the rotating control head assembly relative to the subsea housing. The rotating control head assembly is sealed with the subsea housing when the holding member engages the internal formation. An extendible portion of the holding member assembly extrudes an elastomer between an upper portion and a lower portion of the internal housing to seal the rotating control head assembly with the subsea housing. Pressure relief mechanisms release excess pressure in the subsea housing and a pressure compensation mechanism pressurize bearings in the bearing assembly at a predetermined pressure.

Abstract: The present invention generally relates to an apparatus and method for sealing a tubular string. In one aspect, a drilling system is provided. The drilling system includes a rotating control head for sealing the tubular string while permitting axial movement of the string relative to the rotating control head. The drilling system also includes an actuating fluid for actuating the rotating control head and maintaining a pressure differential between a fluid pressure in the rotating control head and a wellbore pressure. Additionally, the drilling system includes a cooling medium for passing through the rotating control head. In another aspect, a rotating control head is provided. In yet another aspect, a method for sealing a tubular in a rotating control head is provided.

Abstract: The present invention provides a system for producing a triple-gate transistor segment (300), utilizing a standard semiconductor substrate (302). The substrate has a plurality of isolation regions (304) formed along its upper surface in a distally separate relationship, defining a channel region (306). A form structure (308) is disposed atop the isolation regions, and defines a channel body area (310) over the channel region. A channel body structure (316) is disposed within the channel body area, and is engineered to provide a blunted corner or edge (318) along a perimeter of its upper exposed surface. The form structure is then removed, and subsequent processing is performed.

Abstract: The present invention facilitates semiconductor fabrication by maintaining shape and density of an etch stop layer (206) during trench fill operations. The shape and density of the etch stop layer (206) is maintained by forming a protective alloy liner layer (310) on the etch stop layer (206) prior to trench fill operations. The protective alloy liner (310) is comprised of an alloy that is resistant to materials employed in the trench fill operations. As a result, clipping and/or damage to the etch stop layer (206) is mitigated thereby facilitating a subsequent planarization process that employs the etch stop layer (206). Additionally, selection of thickness and composition (1706) of the formed protective alloy (310) yields a stress amount and type (1704) that is applied to channel regions of unformed transistor devices, ultimately providing for an improvement in channel mobility.

Abstract: A package for articles such as consumer goods that comprised security measures embedded within the package itself in order determine authenticity of goods is described. The package preferably comprises a packaging substrate material laminated to a face sheet having the security measures. The package may be printed with graphical indicia. The package may be authenticated by viewing the security measures, which may preferably be visible only under infrared light.

Abstract: Multi-gate MOS transistors and fabrication methods are described, in which the transistor semiconductor body thickness or width is lithography independent, allowing scaled triple and quad-gate devices having semiconductor bodies smaller than a lateral gate length dimension. A form structure is provided over a semiconductor wafer starting structure, and spacers are formed along one or more sidewalls of an opening in the form structure. A semiconductor material is deposited in the opening by epitaxial growth or other deposition process, and the form structure and the spacer are removed. A gate structure is then formed along the top and sides of a central portion of the formed semiconductor body. The spacer may be L-shaped, providing an undercut or recess at the bottom of the semiconductor body sidewall, and the gate may be formed in the undercut area to allow fabrication of more than three gates.

Abstract: The present invention provides, in one embodiment, a gate structure (100). The gate structure comprises a gate dielectric (105) and a gate (110). The gate dielectric includes a refractory metal and is located over a semiconductor substrate (115). The semiconductor substrate has a conduction band and a valence band. The gate is located over the gate dielectric and includes the refractory metal. The gate has a work function aligned toward the conduction band or the valence band. Other embodiments include an alternative gate structure (200), a method of forming a gate structure (300) for a semiconductor device (301) and a dual gate integrated circuit (400).

Abstract: The present invention provides, in one embodiment, a process for forming a dual work function metal gate semiconductor device (100). The process includes providing a semiconductor substrate (105) having a gate dielectric layer (110) thereon and a metal layer (205) on the gate dielectric layer. A work function of the metal layer is matched to a conduction band or a valence band of the semiconductor substrate. The process also includes forming a conductive barrier layer (210) on a portion (215) of the metal layer and a material layer (305) on the metal layer. The metal layer and the material layer are annealed to form a metal alloy layer (405) to thereby match a work function of the metal alloy layer to another of the conduction band or the valence band of the substrate. Other embodiments of the invention include a dual work function metal gate semiconductor device (900) and an integrated circuit (1000).

Abstract: A seal assembly for use with a rotating control head is provided. The seal assembly includes a rotatable member and a cavity formed between the rotatable member and a tubular radially inwardly disposed from the rotatable member. The cavity having a first surface and a second surface. The seal assembly further includes a seal member having a first end and a second end disposed between the first surface and the second surface of the cavity and sealable with the tubular between the first and the second ends due to deformation of the seal member.

Abstract: Transistors and fabrication methods are presented in which a semiconductor body is deposited in a cavity of a temporary form structure above a semiconductor starting structure. The formed semiconductor body can be epitaxial silicon deposited in the form cavity over a silicon substrate, and includes three body portions, two of which are doped to form source/drains, and the other forming a transistor channel that overlies the starting structure. A gate structure is formed along one or more sides of the channel body portion to create a MOS transistor.

Abstract: Methods and systems are disclosed that facilitate semiconductor fabrication by fabricating transistor devices having gate dielectrics with selectable thicknesses in different regions of semiconductor devices. The thicknesses correspond to operating voltages of the corresponding transistor devices. Furthermore, the present invention also provides systems and methods that can fabricate the gate dielectrics with high-k dielectric material, which allows a thicker gate dielectric than conventional silicon dioxide.

Abstract: The present invention pertains to forming a transistor in the absence of hydrogen, or in the presence of a significantly reduced amount of hydrogen. In this manner, a high-k material can be utilized to form a gate dielectric layer in the transistor and facilitate device scaling while mitigating defects that can be introduced into the high-k material by the presence of hydrogen and/or hydrogen containing compounds.

Abstract: A method for improving high-? gate dielectric film (104) properties. The high-? film (104) is subjected to a two step anneal sequence. The first anneal is performed in a reducing ambient (106) with low partial pressure of oxidizer to promote film relaxation and increase by-product diffusion and desorption. The second anneal is performed in an oxidizing ambient (108) with a low partial pressure of reducer to remove defects and impurities.

Abstract: The present invention pertains to forming a transistor in the absence of hydrogen, or in the presence of a significantly reduced amount of hydrogen. In this manner, a high-k material can be utilized to form a gate dielectric layer in the transistor and facilitate device scaling while mitigating defects that can be introduced into the high-k material by the presence of hydrogen and/or hydrogen containing compounds.

Abstract: Methods are disclosed for treating deposited gate dielectric materials, in which the deposited dielectric is subjected to one or more non-oxidizing anneals to densify the material, one or more oxidizing anneals to mitigate material defects, and to a nitridation process to introduce nitrogen into the gate dielectric. The annealing may be performed before and/or after the nitridation to mitigate deposition and/or nitridation defects and to densify the material while mitigating formation of unwanted low dielectric constant oxides at the interface between the gate dielectric and the semiconductor substrate.

Abstract: A system and method for manufacturing semiconductor devices with dielectric layers having a dielectric constant greater than silicon dioxide includes depositing a dielectric layer on a substrate and subjecting the dielectric layer to a plasma to reduce top surface roughness in the dielectric layer.

Abstract: The present invention pertains to annealing a high dielectric constant (high-k) material in a manner that substantially reduces or eliminates disadvantages and problems heretofore associated with the same. In particular, the high-k material is annealed in an ambient having a single chemistry of nitrogen and hydrogen, such as ammonia (NH3), to nitride and react unwanted impurities, and an oxidizer to oxidize and densify the high-k material, while mitigating growth of a lower-k material at an interface of the high-k material and an underlying substrate. Additionally, particular temperatures and pressures are utilized within the process so that the risk of an undesired exothermic reaction is mitigated. Annealing the high-k material in accordance with manners disclosed herein has application to semiconductor fabrication processes and, as such, is discussed herein within the context of the same.