Abstract: Embodiments of the invention relate to a system and method for collecting and storing static electrical energy in the atmosphere. An embodiment of the system comprises a control station, an airborne energy harvester with a fuselage, a collecting unit, and a storage module. The control station wireless communicates with the airborne energy harvester to control the movement of the airborne energy harvester. The collecting unit is mounted on a surface of the fuselage to collect the static electrical energy in the atmosphere. The storage module is located inside of the fuselage and includes at least one magnetic capacitor. The static electrical energy collected by the collecting unit is transferred and stored in the at least one magnetic capacitor.

Abstract: Embodiments of the present invention relate to an apparatus and method for collecting and/or storing electrical energy in lightning. A specific embodiment provides a lightning energy storage system that includes a lightning rod, a wire, a lightning energy harvester, and a ground rod. The lightning rod is configured to attract lightning and transfer electrical energy. The lightning energy harvester incorporates at least one magnetic capacitor and a switch. The ground rod is connected to the wire. A control signal controls the switch to direct the electrical energy to ground through the ground rod or to direct the electrical energy to charge the magnetic capacitor, in response to a charging state of the magnetic capacitor.

Abstract: This invention discloses a load system for loading an Mcap energy storage module to an apparatus, comprising: a storage unit and a load unit. The storage unit further comprises: a first housing part and a seal for sealing the first housing part. The first housing part includes four side walls, a bottom wall and a first opening. A plurality of Mcap cell are disposed in the first housing part through the first opening. A first electrode formed in a side wall. A second electrode formed in another side wall facing the first side wall. The load unit comprises a second housing part and a seal for sealing the second housing part. The storage unit is loaded into the second housing part through the second opening.

Abstract: This invention discloses a load system for loading an Mcap energy storage module to an apparatus, comprising: a storage unit and a load unit. The storage unit further comprises: a first housing part and a seal for sealing the first housing part. The first housing part includes four side walls, a bottom wall and a first opening. A plurality of Mcap cell are disposed in the first housing part through the first opening. A first electrode formed in a side wall. A second electrode formed in another side wall facing the first side wall. The load unit comprises a second housing part and a seal for sealing the second housing part. The storage unit is loaded into the second housing part through the second opening.

Abstract: An energy storage system includes a battery charger and energy storage devices. The battery charger is connected to a DC/AC current source. The energy storage devices are coupled between the battery charger and subsystems respectively. Each of the energy storage devices includes a magnetic capacitor (MCAP) and an over current protection device (OCPD). MCAPs are charged by the battery charger and supply the electric power to subsystems connected the energy storage devices. OCPDs detect current from MCAPs to subsystems and protect subsystems from excessive currents of voltages.

Abstract: A MRAM memory and process thereof is described. A GMR magnetic layer is patterned to form a memory bit layer and an intermediate conductive layer. The intermediate conductive layer is disposed between two conductive layers such that shallow metal plugs can be utilized to interconnect the intermediate conductive layer and the conductive layers. Thus, a conventional deep tungsten plug process, interconnecting two conductive layers, is eliminated.

Abstract: An assembly of an magnetic capacitor with a packaging comprises: a magnetic capacitor; two packing electrodes, one of the two end electrodes including an upper magnetic casing installed upon a top surface of the capacitor and a lower magnetic casing installed at a lower surface of the capacitor; each of the upper magnetic casing and the lower magnetic casing being formed with extruding pieces which is arranged around a lateral side of the capacitor; and at least one insulation material for isolating magnetic material is arranged within the magnetic capacitor.

Abstract: A MRAM memory and process thereof is described. A GMR magnetic layer is patterned to form a memory bit layer and an intermediate conductive layer. The intermediate conductive layer is disposed between two conductive layers such that shallow metal plugs can be utilized to interconnect the intermediate conductive layer and the conductive layers. Thus, a conventional deep tungsten plug process, interconnecting two conductive layers, is eliminated.

Abstract: A logic gate array is provided. The logic gate comprises a silicon substrate, a first logic gate layer on top of the silicon substrate, a second logic gate layer on top of the first logic gate layer, and a routing layer between the first and second logic gate layers for routing magnetic gates in the first and second logic gate layers, wherein the first logic gate layer, the second logic gate layer, and the routing layer are electrically connected by vias.

Abstract: An apparatus for storing electrical energy is provided. The apparatus includes a first magnetic layer, a second magnetic layer, and a dielectric layer. The first magnetic layer has a first surface with saw tooth roughness; the second magnetic layer has a second surface with saw tooth roughness; and the dielectric layer is configured between the first magnetic layer and the second magnetic layer. The dielectric layer is arranged to store electrical energy; the first magnetic layer and the second magnetic layer are arranged to prevent electrical energy leakage; and the saw tooth roughness on the first surface and the second surface is designed to increase the capacitance of the apparatus.

Abstract: A conductive plug located in a planar dielectric layer, under GMR memory cells, are used to directly connect the lower ferromagnetic layer of one of the GMR memory cell and a conductive layer under the planar dielectric layer.

Abstract: A MRAM memory and process thereof is described. A GMR magnetic layer is patterned to form a memory bit layer and an intermediate conductive layer. The intermediate conductive layer is disposed between two conductive layers such that shallow metal plugs can be utilized to interconnect the intermediate conductive layer and the conductive layers. Thus, a conventional deep tungsten plug process, interconnecting two conductive layers, is eliminated.

Abstract: An integrated circuit package for magnetic capacitor including a substrate, an integrated circuit and a magnetic capacitor unit is disclosed. The substrate has a first surface and an opposite second surface. The integrated circuit is connected to the second surface of the substrate. The magnetic capacitor unit has a positive terminal and a negative terminal connected to the substrate.

Abstract: The present invention discloses an electrical device. The electrical device comprises an integrated circuit chip with a positive terminal and a negative terminal, wherein the integrated circuit chip has an energy management function; and a magnetic capacitor connecting with the integrated circuit chip, the magnetic capacitor stores electrical power and provides the electrical power to the integrated circuit chip, wherein the magnetic capacitor comprises: a first magnetic section connects with the positive terminal; a second magnetic section connects with the negative terminal; and a dielectric section configured between the first magnetic section and the second magnetic section; wherein the dielectric section is arranged to store the electrical power.

Abstract: A magnetic transistor includes a first magnetic section, a second magnetic section, a conductive section, a first metal terminal, and a second metal terminal. The conductive section is disposed between and is in direct contact with both the first and second magnetic section. The first metal terminal is disposed on one end of an opposite surface to the conductive section of the first magnetic section. The second metal terminal is disposed on one end approximately diagonal to the first metal terminal on an opposite surface to the conductive section of the second magnetic section. While the magnetic transistor structure is turned on, a current flows through the first magnetic section and the second magnetic section via the conductive section.

Abstract: A variable timing system for a magnetoresistive random access memory circuit (MRAM IC) is embedded in an MRAM IC and includes a number of timing control circuits, where each timing control circuit generates a timing control signal. A number of variable timing circuits are each coupled to receive at least two of the timing control signals, and each of the number of timing circuits outputs a variable timing in response to the timing control signals. At least one MRAM timing driver is connected to receive the variable timing.

Abstract: An expandable energy storage for portable electronic devices is disclosed. The expandable energy storage includes magnetic-capacitor (MCAP) energy storage sticks and a controller. The MCAP energy storage sticks are arranged in parallel and provide electrical power to a portable electronic device. Each MCAP energy storage stick has a positive terminal, a negative terminal, and a controlling terminal for coupling with the portable electronic device. The controller couples the controlling terminals of the MCAP energy storage sticks to a system data terminal.

Abstract: A DRAM cell includes a substrate, a transistor, and a magnetic capacitor. The substrate is composed of semiconductor material with a main surface, the transistor is formed at the main surface, and the magnetic capacitor is formed in a metal layer. The magnetic capacitor includes a first magnetic layer, a dielectric layer formed on the surface of the first magnetic layer, and a second magnetic layer formed on the surface of the dielectric layer. The dielectric layer is a non-conductive material and the first magnetic layer and the second magnetic layer are formed by an alloy of CoNiFe.

Abstract: An energy storage system includes a battery charger and energy storage devices. The battery charger is connected to a DC/AC current source. The energy storage devices are coupled between the battery charger and subsystems respectively. Each of the energy storage devices includes a magnetic capacitor (MCAP) and an over current protection device (OCPD). MCAPs are charged by the battery charger and supply the electric power to subsystems connected the energy storage devices. OCPDs detect current from MCAPs to subsystems and protect subsystems from excessive currents of voltages.

Abstract: An apparatus for storing electrical energy includes a first magnetic layer, a second magnetic layer, and a dielectric layer. The first magnetic layer includes a first magnetic section and a second magnetic section. The first magnetic section has magnetic dipoles with horizontal directions. The second magnetic section has magnetic dipoles with vertical directions. The second magnetic layer includes a third magnetic section and a fourth magnetic section. The third magnetic section has magnetic dipoles with horizontal directions. The fourth magnetic section has magnetic dipoles with vertical directions. The dielectric layer is configured between the first magnetic layer and the second magnetic layer. The dielectric layer is arranged to store electrical energy. The first magnetic layer and the second magnetic layer are arranged to prevent electrical energy leakage.