Abstract: A power and energy (PE) meter includes a sensor head comprising a sensor which absorbs EM radiation that impinges on it, and a heat sink with which the sensor is in thermal contact. The heat sink includes a through-hole behind the sensor which allows at least some of the EM radiation which is not absorbed by the sensor to pass through the heat sink without being absorbed. A means of applying mechanical pressure is preferably employed to hold the sensor in thermal contact with the heat sink. A capture head and shroud may be mounted behind and physically separate from the sensor head, and arranged to absorb at least some of the radiation which is not absorbed by the sensor head.

Abstract: An aluminum nitride (AlN) thin-film is applied over thin-film metallic circuitry such as an environmental sensor, on the side edges of electrode pads, and/or over some or all of the surface area of a substrate. The thin-film acts to protect the encapsulated structures from exposure to oxidation and from reducing and vacuum environments, electrically insulates the encapsulated structures from other structures, and helps to securely adhere the structures to the substrate surface. The AlN thin-film can also enable multiple IC layers to be stacked on top of each other, with AlN thin-film interlayers employed between IC layers such that each IC layer is separated and electrically insulated from adjacent layers.

Abstract: The present platen enables a component such as a surface-mount device to be held in close proximity to a contact heating source via vacuum suction. The platen comprises top and bottom thermally conductive surfaces with the top surface held in close proximity to the contact heating source, a through-hole which extends between the surfaces, and at least one groove recessed into the top surface which runs from a portion of the top surface that extends beyond the contact heating source to the through-hole, such that an applied vacuum is conveyed to the bottom surface via the grooves and through-hole. The bottom surface may include a rim around its perimeter; vacuum suction conveyed via the grooves and through-hole can hold a component to be heated against the rim, or within the recessed portion. The platen can be tailored for use with various component types, including PBGA and QFP SMDs.

Abstract: A SiC die with Os and/or W/WC/TiC contacts and metal conductors is encapsulated either alone or on a ceramic substrate using a borosilicate (BSG) glass that is formed at a temperature well below upper device operating temperature limits but serves as a stable protective layer above the operating temperature (over 1000° C., preferably >1200° C.). The glass is preferably 30-50% B2O3/70-50% SiO2, formed by reacting a mixed powder, slurry or paste of the components at 460°-1000° C. preferably about 700° C. The die can be mounted on the ceramic substrate using the BSG as an adhesive. Metal conductors on the ceramic substrate are also protected by the BSG. The preferred ceramic substrate is AIN but SiC/AIN or Al2 03 can be used.

Abstract: A sensor system has an AlN substrate, a W layer on the substrate, a signal source adapted to apply an electrical actuating signal to the W layer, and a sensor adapted to sense the response of the W layer. The W layer can comprise a thin film, with various types of optional protective layers over the film. Applications include sensing temperature, fluid flow rates, fluid levels, pressure and chemical environments. For a planar heater, the W layer comprises a plurality of conductive strands distributed on the substrate, with the strands generally parallel and serpentine shaped for a rectangular substrate, and extending along respective lines of longitude that merge at opposite poles of the substrate for a circular substrate.

Abstract: Environmental sensors and other bodies, together with associated lead wires, are mounted to a oxidizable substrate for high temperature applications by means of a reacted borosilicate mixture (RBM) that secures the body relative to the substrate via of an oxide interface formed between the RBM and substrate during a high temperature reaction process. An oxide interface is also formed with oxidizable bodies to provide further mounting strength. The RBM is a B2O3—SiO2 mixture, with the B2O3 portion a function of the reaction temperature and desired bonding strength and viscosity.

Abstract: SiC at least about 400 micrometers thick, and preferably within the range of about 400-2,000 micrometers thick, is employed to detect electromagnetic radiation having a wavelength less than about 10 micrometers via an acoustic absorption mechanism. The SiC body preferably has a non-dopant impurity level low enough that it does not interfere with a single crystal structure for the SiC, and an approximately uniform thickness with an approximately flat radiation receiving surface.

Abstract: A sensor system has an AlN substrate, a W layer on the substrate, a signal source adapted to apply an electrical actuating signal to the W layer, and a sensor adapted to sense the response of the W layer. The W layer can comprise a thin film, with various types of optional protective layers over the film. Applications include sensing temperature, fluid flow rates, fluid levels, pressure and chemical environments. For a planar heater, the W layer comprises a plurality of conductive strands distributed on the substrate, with the strands generally parallel and serpentine shaped for a rectangular substrate, and extending along respective lines of longitude that merge at opposite poles of the substrate for a circular substrate.

Abstract: A mass flow meter employs discrete chip-type temperature sensors to sense a fluid flow rate. The sensor can be a semiconductor chip such as SiC or silicon, or thin film tungsten on an AlN substrate. The sensors can be distributed symmetrically with respect to the conduit through which the fluid flows, and can be connected in a four-sensor bridge circuit for accurate flow rate monitoring. An output from the mass flow meter can be used to control the fluid flow.

Abstract: Environmental sensors and other bodies, together with associated lead wires, are mounted to a oxidizable substrate for high temperature applications by means of a reacted borosilicate mixture (RBM) that secures the body relative to the substrate via of an oxide interface formed between the RBM and substrate during a high temperature reaction process. An oxide interface is also formed with oxidizable bodies to provide further mounting strength. The RBM is a B2O3—SiO2 mixture, with the B2O3 portion a function of the reaction temperature and desired bonding strength and viscosity.

Abstract: A high temperature hybrid-circuit structure includes a temperature sensitive device which comprises SiC, AlN and/or AlxGa1-xN(x>0.69) connected via electrodes to an electrically conductive mounting layer that is physically bonded to an AlN die. The die, temperature sensitive device and mounting layer, which can be a thin film of W, WC or W2C less than 10 micrometers thick, have temperature coefficients of expansion within 1.06 of each other. The mounting layer can consist entirely of a W, WC or W2C adhesive layer, or an adhesive layer with an overlay metallization having a thermal coefficient of expansion not greater than about 3.5 times that of the adhesive layer. Applications include temperature sensors, pressure sensors, chemical sensors and high temperature and high power electronic circuits. Without the mounting layer, a thin film piezoelectric layer of SiC, AlN and/or AlxGa1-xN(x>0.69), less than 10 micrometers thick, can be secured to the die.

Abstract: A SiC die with Os and/or W/WC/TiC contacts and metal conductors is encapsulated either alone or on a ceramic substrate using a borosilicate (BSG) glass that is formed at a temperature well below upper device operating temperature limits but serves as a stable protective layer above the operating temperature (over 1000° C., preferably >1200° C.). The glass is preferably 30-50% B2O3/70-50% SiO2, formed by reacting a mixed powder, slurry or paste of the components at 460°-1000° C. preferably about 700° C. The die can be mounted on the ceramic substrate using the BSG as an adhesive. Metal conductors on the ceramic substrate are also protected by the BSG. The preferred ceramic substrate is AlN but SiC/AlN or Al2O3 can be used.

Abstract: A mass flow meter employs discrete chip-type temperature sensors to sense a fluid flow rate. The sensor can be a semiconductor chip such as SiC or silicon, or thin film tungsten on an AlN substrate. The sensors can be distributed symmetrically with respect to the conduit through which the fluid flows, and can be connected in a four-sensor bridge circuit for accurate flow rate monitoring. An output from the mass flow meter can be used to control the fluid flow.

Abstract: A high temperature hybrid-circuit structure includes a temperature sensitive device which comprises SiC, AlN and/or AlxGa1-xN(x>0.69) connected via electrodes to an electrically conductive mounting layer that is physically bonded to an AlN die. The die, temperature sensitive device and mounting layer, which can be a thin film of W, WC or W2C less than 10 micrometers thick, have temperature coefficients of expansion within 1.06 of each other. The mounting layer can consist entirely of a W, WC or W2C adhesive layer, or an adhesive layer with an overlay metallization having a thermal coefficient of expansion not greater than about 3.5 times that of the adhesive layer. Applications include temperature sensors, pressure sensors, chemical sensors and high temperature and high power electronic circuits. Without the mounting layer, a thin film piezoelectric layer of SiC, AlN and/or AlxGa1-xN(x>0.69), less than 10 micrometers thick, can be secured to the die.

Abstract: A high temperature hybrid-circuit structure includes a temperature sensitive device which comprises SiC, AlN and/or AlxGa1-xN(x>0.69) connected via electrodes to an electrically conductive mounting layer that is physically bonded to an AlN die. The die, temperature sensitive device and mounting layer (which can be W, WC or W2C) have temperature coefficients of expansion within 1.06 of each other. The mounting layer can consist entirely of a W, WC or W2C adhesive layer, or an adhesive layer with an overlay metallization having a thermal coefficient of expansion not greater than about 3.5 times that of the adhesive layer. The device can be encapsulated with a reacted borosilicate mixture, with or without an upper die which helps to hold on lead wires and increases structural integrity. Applications include temperature senensors, pressure sensors, chemical sensors and high temperature and high power electronic circuits.

Abstract: Single crystal SiC at least 200 micrometers thick is employed to detect electromagnetic radiation having a wavelength less than about 10 micrometers via an acoustic absorption mechanism. Applications include IR radiation sensing, contactless temperature sensing and an IR controlled varistor.

Abstract: A sensor system has an AlN substrate, a W layer on the substrate, a signal source adapted to apply an electrical actuating signal to the W layer, and a sensor adapted to sense the response of the W layer. The W layer can comprise a thin film, with various types of optional protective layers over the film. Applications include sensing temperature, fluid flow rates, fluid levels, pressure and chemical environments. For a planar heater, the W layer comprises a plurality of conductive strands distributed on the substrate, with the strands generally parallel and serpentine shaped for a rectangular substrate, and extending along respective lines of longitude that merge at opposite poles of the substrate for a circular substrate.

Abstract: SiC at least about 400 micrometers thick, and preferably within the range of about 400-2,000 micrometers thick, is employed to detect electromagnetic radiation having a wavelength less than about 10 micrometers via an acoustic absorption mechanism. The SiC body preferably has a non-dopant impurity level low enough that it does not interfere with a single crystal structure for the SiC, and an approximately uniform thickness with an approximately flat radiation receiving surface.

Abstract: A mass flow meter employs discrete chip-type temperature sensors to sense a fluid flow rate. The sensor can be a semiconductor chip such as SiC or silicon, or thin film tungsten on an AlN substrate. The sensors can be distributed symmetrically with respect to the conduit through which the fluid flows, and can be connected in a four-sensor bridge circuit for accurate flow rate monitoring. An output from the mass flow meter can be used to control the fluid flow.

Abstract: A high temperature hybrid-circuit structure includes a temperature sensitive device which comprises SiC, AlN and/or AlxGa1−xN(x>0.69) connected by electrodes to an electrically conductive mounting layer that is physically bonded to an AlN die. The die, temperature sensitive device and mounting layer (which can be W, WC or W2C) have temperature coefficients of expansion within 1.06 of each other. The mounting layer can consist entirely of a W, WC or W2C adhesive layer, or an adhesive layer with an overlay metallization having a thermal coefficient of expansion not greater than about 3.5 times that of the adhesive layer. The device can be encapsulated with a reacted borosilicate mixture, with or without an upper die which helps to hold on lead wires and increases structural integrity. Applications include temperature sensors, pressure sensors, chemical sensors, and high temperature and high power electronic circuits.