Patents by Inventor James E. Boyle

James E. Boyle has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200350084
    Abstract: In a pressurized water reactor (PWR), emergency core cooling (ECC) responds to depressurization due to a vessel penetration break at the top of the pressure vessel by draining water from a body of water through an injection line into the pressure vessel. A barrier operates concurrently with the ECC to suppress flow of liquid water from the pressure vessel out the vessel penetration break. The barrier may comprise one or more of: (1) an injection line extension passing through the central riser to drain water into the central riser; (2) openings in a lower portion of a central riser to shunt some upward flow from the central riser into a lower portion of the downcomer annulus; and (3) a surge line providing fluid communication between a pressurizer volume at the top of the pressure vessel and the remainder of the pressure vessel which directs water outboard toward the downcomer annulus.
    Type: Application
    Filed: July 20, 2020
    Publication date: November 5, 2020
    Inventors: John D. Malloy, III, Billy E. Bingham, Ronald C. Watson, Jason G. Williams, Matthew W. Ales, James B. Inman, Sean M. Boyle
  • Patent number: 10720248
    Abstract: In a pressurized water reactor (PWR), emergency core cooling (ECC) responds to depressurization due to a vessel penetration break at the top of the pressure vessel by draining water from a body of water through an injection line into the pressure vessel. A barrier operates concurrently with the ECC to suppress flow of liquid water from the pressure vessel out the vessel penetration break. The barrier may comprise one or more of: (1) an injection line extension passing through the central riser to drain water into the central riser; (2) openings in a lower portion of a central riser to shunt some upward flow from the central riser into a lower portion of the downcomer annulus; and (3) a surge line providing fluid communication between a pressurizer volume at the top of the pressure vessel and the remainder of the pressure vessel which directs water outboard toward the downcomer annulus.
    Type: Grant
    Filed: March 17, 2014
    Date of Patent: July 21, 2020
    Assignee: BWXT mPower, Inc.
    Inventors: John D. Malloy, III, Billy E. Bingham, Ronald C. Watson, Jason G. Williams, Matthew W. Ales, James B. Inman, Sean M. Boyle
  • Publication number: 20200203029
    Abstract: In a pressurized water reactor (PWR), emergency core cooling (ECC) responds to depressurization due to a vessel penetration break at the top of the pressure vessel by draining water from a body of water through an injection line into the pressure vessel. A barrier operates concurrently with the ECC to suppress flow of liquid water from the pressure vessel out the vessel penetration break. The barrier may comprise one or more of: (1) an injection line extension passing through the central riser to drain water into the central riser; (2) openings in a lower portion of a central riser to shunt some upward flow from the central riser into a lower portion of the downcomer annulus; and (3) a surge line providing fluid communication between a pressurizer volume at the top of the pressure vessel and the remainder of the pressure vessel which directs water outboard toward the downcomer annulus.
    Type: Application
    Filed: March 17, 2014
    Publication date: June 25, 2020
    Inventors: John D. Malloy, III, Billy E. Bingham, Ronald C. Watson, Jason G. Williams, Matthew W. Ales, James B. Inman, Sean M. Boyle
  • Patent number: 8486835
    Abstract: Non-production wafers of polycrystalline silicon are placed in non-production slots of a support tower for thermal processing monocrystalline silicon wafers. They may have thicknesses of 0.725 to 2 mm and be roughened on both sides. Nitride may be grown on the non-production wafers to a thickness of over 2 ?m without flaking. The polycrystalline silicon is preferably randomly oriented Czochralski polysilicon grown using a randomly oriented seed, for example, CVD grown silicon. Both sides are ground to introduce sub-surface damage and then oxidized and etch cleaned. An all-silicon hot zone of a thermal furnace, for example, depositing a nitride layer, may include a silicon support tower placed within a silicon liner and supporting the polysilicon non-production wafers with silicon injector tube providing processing gas within the liner.
    Type: Grant
    Filed: September 18, 2009
    Date of Patent: July 16, 2013
    Inventors: James E. Boyle, Reese Reynolds, Raanan Y. Zehavi, Tom L. Cadwell, Doris Mytton
  • Patent number: 8268448
    Abstract: A method of joining two silicon members, the adhesive used for the method, and the joined product, especially a silicon tower for supporting multiple silicon wafers. A flowable adhesive is prepared comprising silicon particles of size less than 100 ?m and preferably less than 100 nm and a silica bridging agent, such as a spin-on glass. Nano-silicon crystallites of about 20 nm size maybe formed by CVD. Larger particles maybe milled from virgin polysilicon. If necessary, a retardant such as a heavy, preferably water-insoluble alcohol such as terpineol is added to slow setting of the adhesive at room temperature. The mixture is applied to the joining areas. The silicon parts are assembled and annealed at a temperature sufficient to link the silica, preferably at 900° C. to 1100° C. for nano-silicon but higher for milled silicon.
    Type: Grant
    Filed: January 11, 2010
    Date of Patent: September 18, 2012
    Assignee: Ferrotec (USA) Corporation
    Inventors: James E. Boyle, Raanan Zehavi, Amnon Chalzel
  • Patent number: 7972703
    Abstract: Baffle wafers of polycrystalline silicon are placed in non-production slots of a support tower for thermal processing monocrystalline silicon wafers. The polycrystalline silicon is preferably randomly oriented Czochralski polysilicon grown using a randomly oriented seed, for example, CVD grown silicon. An all-silicon hot zone of a thermal furnace may include a silicon support tower placed within a silicon liner and supporting the polysilicon baffle wafers with silicon injector tube providing processing gas within the liner. The randomly oriented polysilicon may be used for other parts requiring a rugged member, for example, within a silicon processing chamber and for structural members.
    Type: Grant
    Filed: January 9, 2006
    Date of Patent: July 5, 2011
    Assignee: Ferrotec (USA) Corporation
    Inventors: James E. Boyle, Reese Reynolds, Ranaan Y. Zehavi, Robert W. Mytton, Tom L. Cadwell
  • Patent number: 7854974
    Abstract: Tubular silicon members advantageously formed by extrusion from a silicon melt or by fixing together silicon staves in a barrel shape. A silicon-based wafer support tower is particularly useful for batch-mode thermal chemical vapor deposition and other high-temperature processes, especially reflow of silicate glass at above 1200° C. The surfaces of the silicon tower are bead blasted to introduce sub-surface damage, which produces pits and cracks in the surface, which anchor subsequently deposited layer of, for example, silicon nitride, thereby inhibiting peeling of the nitride film. Wafer support portions of the tower are preferably composed of virgin polysilicon. The invention can be applied to other silicon parts in a deposition or other substrate processing reactor, such as tubular sleeves and reactor walls. The tower parts are preferably pre-coated with silicon nitride or polysilicon prior to chemical vapor deposition of these materials, or with silicon nitride prior to reflow of silica.
    Type: Grant
    Filed: September 18, 2006
    Date of Patent: December 21, 2010
    Assignee: Integrated Materials, Inc.
    Inventors: Ranaan Y. Zehavi, James E. Boyle
  • Patent number: 7789331
    Abstract: A method of jet milling silicon powder in which silicon pellets are fed into a jet mill producing a gas vortex in which the pellets are entrained and pulverized by collisions with each other or walls of the milling chamber. The chamber walls are advantageously formed of high-purity silicon as are other parts contacting the unground pellets or ground powder. The pellets and chamber parts may be formed of electronic grade silicon but polycrystalline silicon may be used for chamber parts. Additionally, the particle feed tube in which the particles are entrained in a gas flow and the vortex finder operating as the outlet at the center of the vortex may be formed of silicon. The milling and feed gas may be nitrogen supplied from a liquid-nitrogen tank lined with stainless steel. The feed pellets may be formed by chemical vapor deposition.
    Type: Grant
    Filed: July 24, 2007
    Date of Patent: September 7, 2010
    Assignee: Integrated Photovoltaics, Inc.
    Inventors: Ranaan Zehavi, James E. Boyle
  • Patent number: 7736747
    Abstract: A method of joining two silicon members and the bonded assembly in which the members are assembled to place them into alignment across a seam. Silicon derived from silicon powder is plasma sprayed across the seam and forms a silicon coating that bonds to the silicon members on each side of the seam to thereby bond together the members. The plasma sprayed silicon may seal an underlying bond of spin-on glass or may act as the primary bond, in which case through mortise holes are preferred so that two layers of silicon are plasma sprayed on opposing ends of the mortise holes. A silicon wafer tower or boat may be the final product. The method may be used to form a ring or a tube from segments or staves arranged in a circle. Plasma spraying silicon may repair a crack or chip formed in a silicon member.
    Type: Grant
    Filed: June 1, 2006
    Date of Patent: June 15, 2010
    Assignee: Integrated Materials, Incorporated
    Inventors: James E. Boyle, Laurence D. Delaney
  • Publication number: 20100119817
    Abstract: A method of joining two silicon members, the adhesive used for the method, and the joined product, especially a silicon tower for supporting multiple silicon wafers. A flowable adhesive is prepared comprising silicon particles of size less than 100 ?m and preferably less than 100 nm and a silica bridging agent, such as a spin-on glass. Nano-silicon crystallites of about 20 nm size maybe formed by CVD. Larger particles maybe milled from virgin polysilicon. If necessary, a retardant such as a heavy, preferably water-insoluble alcohol such as terpineol is added to slow setting of the adhesive at room temperature. The mixture is applied to the joining areas. The silicon parts are assembled and annealed at a temperature sufficient to link the silica, preferably at 900° C. to 1100° C. for nano-silicon but higher for milled silicon.
    Type: Application
    Filed: January 11, 2010
    Publication date: May 13, 2010
    Applicant: INTEGRATED MATERIALS, INCORPORATED
    Inventors: James E. Boyle, Raanan Zehavi, Amnon Chalzel
  • Patent number: 7666513
    Abstract: A method of joining two silicon members, the adhesive used for the method, and the joined product, especially a silicon tower for supporting multiple silicon wafers. A flowable adhesive is prepared comprising silicon particles of size less than 100 ?m and preferably less than 100 nm and a silica bridging agent, such as a spin-on glass. Nano-silicon crystallites of about 20 nm size may be formed by CVD. Larger particles may be milled from virgin polysilicon. If necessary, a retardant such as a heavy, preferably water-insoluble alcohol such as terpineol is added to slow setting of the adhesive at room temperature. The mixture is applied to the joining areas. The silicon parts are assembled and annealed at a temperature sufficient to link the silica, preferably at 900° C. to 1100° C. for nano-silicon but higher for milled silicon.
    Type: Grant
    Filed: June 1, 2006
    Date of Patent: February 23, 2010
    Assignee: Integrated Materials, Inc.
    Inventors: James E. Boyle, Raanan Zehavi, Amnon Chalzel
  • Publication number: 20100009123
    Abstract: Non-production wafers of polycrystalline silicon are placed in non-production slots of a support tower for thermal processing monocrystalline silicon wafers. They may have thicknesses of 0.725 to 2 mm and be roughened on both sides. Nitride may be grown on the non-production wafers to a thickness of over 2 ?m without flaking. The polycrystalline silicon is preferably randomly oriented Czochralski polysilicon grown using a randomly oriented seed, for example, CVD grown silicon. Both sides are ground to introduce sub-surface damage and then oxidized and etch cleaned. An all-silicon hot zone of a thermal furnace, for example, depositing a nitride layer, may include a silicon support tower placed within a silicon liner and supporting the polysilicon non-production wafers with silicon injector tube providing processing gas within the liner.
    Type: Application
    Filed: September 18, 2009
    Publication date: January 14, 2010
    Applicant: INTEGRATED MATERIALS, INC.
    Inventors: James E. Boyle, Reese Reynolds, Raanan Y. Zehavi, Robert W. Mytton, Doris Mytton, Tom L. Cadwell
  • Patent number: 7611989
    Abstract: Non-production wafers of polycrystalline silicon are placed in non-production slots of a support tower for thermal processing monocrystalline silicon wafers. They may have thicknesses of 0.725 to 2 mm and be roughened on both sides. Nitride may be grown on the non-production wafers to a thickness of over 2 ?m without flaking. The polycrystalline silicon is preferably randomly oriented Czochralski polysilicon grown using a randomly oriented seed, for example, CVD grown silicon. Both sides are ground to introduce sub-surface damage and then oxidized and etch cleaned. An all-silicon hot zone of a thermal furnace, for example, depositing a nitride layer, may include a silicon support tower placed within a silicon liner and supporting the polysilicon non-production wafers with silicon injector tube providing processing gas within the liner.
    Type: Grant
    Filed: December 18, 2007
    Date of Patent: November 3, 2009
    Assignee: Integrated Materials, Inc.
    Inventors: James E. Boyle, Reese Reynolds, Raanan Y. Zehavi, Robert W. Mytton, Doris Mytton, legal representative, Tom L. Cadwell
  • Publication number: 20080220558
    Abstract: A plasma spray gun configured to spray semiconductor grade silicon to form semiconductor structures including p-n junctions includes silicon parts such as the cathode or anode or other parts facing the plasma or carrying the silicon powder having at least surface portions formed of high purity silicon. The semiconductor dopant may be included in the sprayed silicon.
    Type: Application
    Filed: March 5, 2008
    Publication date: September 11, 2008
    Applicant: Integrated Photovoltaics, Inc.
    Inventors: Raanan Y. Zehavi, James E. Boyle
  • Publication number: 20080152805
    Abstract: Non-production wafers of polycrystalline silicon are placed in non-production slots of a support tower for thermal processing monocrystalline silicon wafers. They may have thicknesses of 0.725 to 2 mm and be roughened on both sides. Nitride may be grown on the non-production wafers to a thickness of over 2 ?m without flaking. The polycrystalline silicon is preferably randomly oriented Czochralski polysilicon grown using a randomly oriented seed, for example, CVD grown silicon. Both sides are ground to introduce sub-surface damage and then oxidized and etch cleaned. An all-silicon hot zone of a thermal furnace, for example, depositing a nitride layer, may include a silicon support tower placed within a silicon liner and supporting the polysilicon non-production wafers with silicon injector tube providing processing gas within the liner.
    Type: Application
    Filed: December 18, 2007
    Publication date: June 26, 2008
    Applicant: INTEGRATED MATERIALS, INC.
    Inventors: James E. BOYLE, Reese REYNOLDS, Raanan Y. ZEHAVI, Robert W. MYTTON, Tom L. CADWELL, Doris MYTTON
  • Publication number: 20080054106
    Abstract: A method of jet milling silicon powder in which silicon pellets are fed into a jet mill producing a gas vortex in which the pellets are entrained and pulverized by collisions with each other or walls of the milling chamber. The chamber walls are advantageously formed of high-purity silicon as are other parts contacting the unground pellets or ground powder. The pellets and chamber parts may be formed of electronic grade silicon but polycrystalline silicon may be used for chamber parts. Additionally, the particle feed tube in which the particles are entrained in a gas flow and the vortex finder operating as the outlet at the center of the vortex may be formed of silicon. The milling and feed gas may be nitrogen supplied from a liquid-nitrogen tank lined with stainless steel. The feed pellets may be formed by chemical vapor deposition.
    Type: Application
    Filed: July 24, 2007
    Publication date: March 6, 2008
    Applicant: INTEGRATED MATERIALS, INC.
    Inventors: Ranaan ZEHAVI, James E. BOYLE
  • Patent number: 7137546
    Abstract: Tubular silicon members advantageously formed by extrusion from a silicon melt or by fixing together silicon staves in a barrel shape. A silicon-based wafer support tower is particularly useful for batch-mode thermal chemical vapor deposition and other high-temperature processes, especially reflow of silicate glass at above 1200° C. The surfaces of the silicon tower are bead blasted to introduce sub-surface damage, which produces pits and cracks in the surface, which anchor subsequently deposited layer of, for example, silicon nitride, thereby inhibiting peeling of the nitride film. Wafer support portions of the tower are preferably composed of virgin polysilicon. The invention can be applied to other silicon parts in a deposition or other substrate processing reactor, such as tubular sleeves and reactor walls. The tower parts are preferably pre-coated with silicon nitride or polysilicon prior to chemical vapor deposition of these materials, or with silicon nitride prior to reflow of silica.
    Type: Grant
    Filed: August 15, 2003
    Date of Patent: November 21, 2006
    Assignee: Integrated Materials, Inc.
    Inventors: Raanan Zehavi, James E. Boyle, Robert W. Mytton
  • Patent number: 7108746
    Abstract: A silicon-based wafer support tower particularly useful for batch-mode thermal chemical vapor deposition. The surfaces of the silicon tower are bead blasted to introduce sub-surface damage, which produces pits and cracks in the surface, which anchor subsequently deposited layer of, for example, silicon nitride, thereby inhibiting peeling of the nitride film. The surface roughness may be in the range of 250 to 2500 ?m. Wafer support portions of the tower are preferably composed of virgin polysilicon. The invention can be applied to other silicon parts in a deposition or other substrate processing reactor, such as tubular sleeves and reactor walls. Tubular silicon members are advantageously formed by extrusion from a silicon melt.
    Type: Grant
    Filed: May 18, 2001
    Date of Patent: September 19, 2006
    Assignee: Integrated Materials, Inc.
    Inventors: Ranaan Y. Zehavi, James E. Boyle
  • Patent number: 7083694
    Abstract: A method of joining two silicon members, the adhesive used for the method, and the joined product, especially a silicon tower for supporting multiple silicon wafers. A flowable adhesive is prepared comprising silicon particles of size less than 100 ?m and preferably less than 100 nm and a silica bridging agent, such as a spin-on glass. Nano-silicon crystallites of about 20 nm size may be formed by CVD. Larger particles may be milled from virgin polysilicon. If necessary, a retardant such as a heavy, preferably water-insoluble alcohol such as terpineol is added to slow setting of the adhesive at room temperature. The mixture is applied to the joining areas. The silicon parts are assembled and annealed at a temperature sufficient to link the silica, preferably at 900° C. to 1100° C. for nano-silicon but higher for milled silicon.
    Type: Grant
    Filed: September 25, 2003
    Date of Patent: August 1, 2006
    Assignee: Integrated Materials, Inc.
    Inventors: James E. Boyle, Raanan Zehavi, Amnon Chalzel
  • Patent number: 7074693
    Abstract: A method of joining two silicon members and the bonded assembly in which the members are assembled to place them into alignment across a seam. Silicon derived from silicon powder is plasma sprayed across the seam and forms a silicon coating that bonds to the silicon members on each side of the seam to thereby bond together the members. The plasma sprayed silicon may seal an underlying bond of spin-on glass or may act as the primary bond, in which case through mortise holes are preferred so that two layers of silicon are plasma sprayed on opposing ends of the mortise holes. A silicon wafer tower or boat may be the final product. The method may be used to form a ring or a tube from segments or staves arranged in a circle. Plasma spraying silicon may repair a crack or chip formed in a silicon member.
    Type: Grant
    Filed: June 24, 2003
    Date of Patent: July 11, 2006
    Assignee: Integrated Materials, Inc.
    Inventors: James E. Boyle, Laurence D. Delaney