Abstract: A method of particle mitigation which includes obtaining a semiconductor wafer having a nonfunctional backside and a functional frontside on which semiconductor devices are formed by one or more lithography processes; coating the backside with a mitigating layer comprising silicon or amorphous carbon; patterning the mitigating layer to form indentations in the mitigating layer; placing the semiconductor wafer onto a wafer chuck such that the wafer chuck makes direct contact with the coated and patterned backside mitigating layer; and while maintaining the coated and patterned backside mitigating layer in direct contact with the wafer chuck, performing a first lithographic process on the frontside.

Abstract: A telematics unit is provided. The telematics unit includes a non-transitory computer-readable medium and a processor, configured to execute a telematics task manager application according to processor-executable instructions stored on the non-transitory computer-readable medium. The telematics task manager application comprises a plurality of tasks. Each task includes one or more subtasks. Each subtask including subtask-specific triggering logic for execution of one or more actions based on the triggering logic. The triggering logic is based on modular condition blocks.

Abstract: A method of task management for a vehicle telematics unit, including the steps of receiving at a vehicle task manager (VTM) a requested vehicle telematics unit task; receiving at the task manager a first evaluation event for a first condition having a THEN relation with a second condition, the first evaluation event being associated with the requested task; providing the first evaluation event to the first condition; and THEN-blocking any evaluation of second evaluation events for the second condition until the first condition evaluates as TRUE.

Abstract: A method of managing diagnostic trouble codes (DTCs) in a vehicle includes generating at a vehicle a plurality of DTCs output from one or more diagnostic subtasks; assigning an ordinal number to each DTC independent of time based on the order in which the DTC occurred at the vehicle; and wirelessly transmitting to a central facility the plurality of DTCs along with the ordinal numbers assigned to each DTC.

Abstract: A method of providing directions to a vehicle service facility includes generating a vehicle service alert that includes vehicle operating data, sending the vehicle service alert to a vehicle telematics service subscriber, offering the vehicle telematics service subscriber a choice of one or more vehicle service facilities for responding to the vehicle service alert, and if the vehicle owner chooses a vehicle service facility, providing turn-by-turn directions to the chosen vehicle service facility.

Abstract: A method of forming damascene vias or dual damascene wires. The method includes using a patterned two layer hard mask wherein the patterns in the lower and upper hard mask layers are formed using a reactive ion etch process. Openings are then formed in the interlevel dielectric layer under the two layer hard mask using a second reactive ion etch process which also removes and the upper hard mask layer. The lower hard mask layer is then removed with a wet etch. Further processing completes forming the damascene vias or dual damascene wires.

Abstract: A telematics unit is provided. The telematics unit includes a non-transitory computer-readable medium and a processor, configured to execute a telematics task manager application according to processor-executable instructions stored on the non-transitory computer-readable medium. The telematics task manager application comprises a plurality of tasks. Each task includes one or more subtasks. Each subtask including subtask-specific triggering logic for execution of one or more actions based on the triggering logic. The triggering logic is based on modular condition blocks.

Abstract: In accordance with one aspect of the invention, a method is provided for fabricating a semiconductor element having a contact via. In such method, a hole can be formed in a dielectric layer to at least partially expose a region including at least one of semiconductor or conductive material. A seed layer can be deposited over a major surface of the dielectric layer and over a surface within the hole. In one embodiment, the seed layer can include a metal selected from the group consisting of iridium, osmium, palladium, platinum, rhodium, and ruthenium. A layer consisting essentially of cobalt can be electroplated over the seed layer within the hole to form a contact via in electrically conductive communication with the region.

Abstract: In accordance with one aspect of the invention, a method is provided for fabricating a semiconductor element having a contact via. In such method, a hole can be formed in a dielectric layer to at least partially expose a region including at least one of semiconductor or conductive material. A seed layer can be deposited over a major surface of the dielectric layer and over a surface within the hole. In one embodiment, the seed layer can include a metal selected from the group consisting of iridium, osmium, palladium, platinum, rhodium, and ruthenium. A layer consisting essentially of cobalt can be electroplated over the seed layer within the hole to form a contact via in electrically conductive communication with the region.

Abstract: Disclosed is a method which includes forming a copper interconnect within a trench or via in a substrate. Forming the copper interconnect includes forming a ruthenium-containing seed layer on a wall of the trench or via; forming a cobalt sacrificial layer on the ruthenium-containing layer before the ruthenium-containing seed layer being exposed to an environment that is oxidizing with respect to the seed layer; and contacting the cobalt sacrificial layer with a copper plating solution, the copper plating solution dissolving the cobalt sacrificial layer and plating out copper on the unoxidized ruthenium-containing seed layer. Alternatively, the ruthenium-containing seed layer may be replaced with platinum, tungsten nitride, titanium nitride or titanium or iridium. Further alternatively, the cobalt sacrificial layer may be replaced by tin, cadmium, copper or manganese.

Abstract: A method of providing directions to a vehicle service facility includes generating a vehicle service alert that includes vehicle operating data, sending the vehicle service alert to a vehicle telematics service subscriber, offering the vehicle telematics service subscriber a choice of one or more vehicle service facilities for responding to the vehicle service alert, and if the vehicle owner chooses a vehicle service facility, providing turn-by-turn directions to the chosen vehicle service facility.

Abstract: Disclosed is a method which includes forming a copper interconnect within a trench or via in a substrate. Forming the copper interconnect includes forming a ruthenium-containing seed layer on a wall of the trench or via; forming a cobalt sacrificial layer on the ruthenium-containing layer before the ruthenium-containing seed layer being exposed to an environment that is oxidizing with respect to the seed layer; and contacting the cobalt sacrificial layer with a copper plating solution, the copper plating solution dissolving the cobalt sacrificial layer and plating out copper on the unoxidized ruthenium-containing seed layer. Alternatively, the ruthenium-containing seed layer may be replaced with platinum, tungsten nitride, titanium nitride or titanium or iridium. Further alternatively, the cobalt sacrificial layer may be replaced by tin, cadmium, copper or manganese.

Abstract: The described method and system provide for a removable computing device as part of a HMI of a vehicle which may be utilized to provide consumers with a personalized driving experience, comprehensive infotainment services, and a more sophisticated avenue for third parties to interact with the consumer. Specifically, the computing device may be a tablet computer, and may communicate with vehicle components wirelessly or through a wired connection and through a communications gateway or other interface. The tablet computer may be a general purpose computer with specific applications designed for vehicle-related functions stored on it. The tablet may provide the user with a plurality of functional interfaces, such as interfaces relating to conventional instrument gauges, heating, ventilation and air conditioning (HVAC) controls, a radio, infotainment services, diagnostics monitoring, and vehicle module reflashing.

Abstract: A method of providing directions to a vehicle service facility includes generating a vehicle service alert that includes vehicle operating data, sending the vehicle service alert to a vehicle telematics service subscriber, offering the vehicle telematics service subscriber a choice of one or more vehicle service facilities for responding to the vehicle service alert, and if the vehicle owner chooses a vehicle service facility, providing turn-by-turn directions to the chosen vehicle service facility.

Abstract: In accordance with one aspect of the invention, a method is provided for fabricating a semiconductor element having a contact via. In such method, a hole can be formed in a dielectric layer to at least partially expose a region including at least one of semiconductor or conductive material. A seed layer can be deposited over a major surface of the dielectric layer and over a surface within the hole. In one embodiment, the seed layer can include a metal selected from the group consisting of iridium, osmium, palladium, platinum, rhodium, and ruthenium. A layer consisting essentially of cobalt can be electroplated over the seed layer within the hole to form a contact via in electrically conductive communication with the region.

Abstract: A method of depositing copper directly onto a tantalum alloy layer of an on-chip copper interconnect structure, which includes electrodepositing copper from a neutral or basic electrolyte onto a surface of a tantalum alloy layer, in which the tantalum alloy layer is deposited on a substrate of the on-chip copper interconnect structure, and in which the copper nucleates onto the surface of the tantalum alloy layer without use of a seed layer to form a copper conductor.

Abstract: Silicide formation processes are disclosed that use an electrochemical displacement reaction in the absence of an externally applied current or potential. In an embodiment, a method for forming an integrated circuit comprises: depositing a metallic material upon select areas of a semiconductor topography comprising silicon by contacting the semiconductor topography with an aqueous solution comprising an acid and a metal salt to cause an electrochemical displacement reaction in the absence of an externally applied current or potential, wherein a concentration of the metal salt in the aqueous solution is about 0.01 millimolar to about 0.5 millimolar; and annealing the metallic material to form a silicide upon the areas of the semiconductor topography comprising the silicon.

Abstract: A sound variation indication apparatus includes a comparison element, an interval checker, and an indication generator. The comparison element receives an audio signal and compares it to a check value to provide a status signal indicating a presence and absence of an expected sound input. The interval checker detects the status signal at predetermined intervals, to provide an interval output. The indication generator generates an indication if the interval output is an absence representation. A process of generating an indication on absence of a sound input includes providing an audio signal based on a sound input and comparing the audio signal to a check value, providing a status signal indicating a presence and absence of the sound input. A status signal value is determined at predetermined intervals, to provide an interval output. An indication is generated if the interval output is an absence representation.

Abstract: The use of an insulating shield for improving the current distribution in an electrochemical plating bath is disclosed. Numerical analysis is used to evaluate the influence of shield shape and position on plating uniformity. Simulation results are compared to experimental data for nickel deposition from a nickel—sulfamate bath. The shield is shown to improve the average current density at a plating surface.

Abstract: The use of an insulating shield for improving the current distribution in an electrochemical plating bath is disclosed. Numerical analysis is used to evaluate the influence of shield shape and position on plating uniformity. Simulation results are compared to experimental data for nickel deposition from a nickel-sulfamate bath. The shield is shown to be an effective and simple way to improve current distribution uniformity, reducing the measured disparity between the average current density and the current density at center of a plating surface center from about 35% to less than about 10%.