Abstract: A coating apparatus may be configured to concurrently receive and waterproof a large number of electronic device assemblies. The coating apparatus may include a track for transporting the electronic device assemblies into an application station. The application station may have a cubic shape, and include an entry door and an opposite exit door. The entry and exit doors may enable the introduction of substrates into the application station, as well as their removal from the application station. In addition, the entry and exit doors may enable isolation of the application station from an exterior environment and, thus, provide control over the conditions under which a moisture resistant material is applied to the substrates. Methods for making electronic devices and other substrates resistant to moisture are also disclosed.

Abstract: An apparatus for applying a protective coating to a high volume of separate electronic device assemblies includes a treatment element that is configured to prepare the high volume of electronic devices before protective coatings are applied to the electronic devices. The apparatus also includes a coating element configured to apply protective coatings to the high volume of separate electronic device assemblies.

Abstract: A method for forming a trench gate field effect transistor includes forming, in a semiconductor region, a trench followed by forming a dielectric layer lining a sidewall and a bottom surface of the trench. The method also includes, forming a first polysilicon layer on the bottom surface of the trench. The method further includes, forming a conductive material layer on an exposed surface of the first polysilicon layer and forming a second polysilicon layer on an exposed surface of the conductive material layer. The method still further includes, performing rapid thermal processing to cause the first polysilicon layer, the second polysilicon layer and the conductive material layer to react.

Abstract: An apparatus for applying a protective coating to a high volume of separate electronic device assemblies includes a treatment element that is configured to prepare the high volume of electronic devices before protective coatings are applied to the electronic devices. The apparatus also includes a coating element configured to apply protective coatings to the high volume of separate electronic device assemblies.

Abstract: A coating apparatus may be configured to concurrently receive and waterproof a large number of electronic device assemblies. The coating apparatus may include a track for transporting the electronic device assemblies into an application station. The application station may have a cubic shape, and include an entry door and an opposite exit door. The entry and exit doors may enable the introduction of substrates into the application station, as well as their removal from the application station. In addition, the entry and exit doors may enable isolation of the application station from an exterior environment and, thus, provide control over the conditions under which a moisture resistant material is applied to the substrates. Methods for making electronic devices and other substrates resistant to moisture are also disclosed.

Abstract: A trench gate field effect transistor includes the following steps. A trench is formed in a semiconductor region, followed by a dielectric layer lining sidewalls and bottom of the trench. A recessed polysilicon layer is formed in the trench. A highly conductive cap layer is formed over and in contact with the recessed polysilicon layer. Rapid thermal processing is performed to cause the recessed polysilicon layer and the highly conductive cap layer to react.

Abstract: A wafer level chip scale package (WLCSP) includes a semiconductor device with a plurality of solder bump pads, patterned passivation regions above each of the solder bump pads, a patterned under bump metallization (UBM) region on each of the solder bump pads and the passivation regions, a polyimide region over a portion of the UBM regions and the passivation regions, solder bumps formed on each of the UBM regions.

Abstract: A trench gate field effect transistor is formed as follows. A trench is formed in a semiconductor region, followed by a dielectric layer lining sidewalls and bottom of the trench and extending over mesa regions adjacent the trench. A conductive seed layer is formed in a bottom portion of the trench over the dielectric layer. A low resistance material is grown over the conductive seed layer, wherein the low resistance material is selective to the conductive seed layer.

Abstract: According to an example embodiment, the present invention is directed to a method for manufacturing a semiconductor device. The device comprises a light-reflective layer and an anti-reflective coating layer over the light-reflective layer. A material is located over the anti-reflective coating layer. The semiconductor is selectively etched using a non-polymerizing oxygen-rich fluorocarbon chemistry. By using an oxygen-rich fluorocarbon chemistry, the use of a polymerizing etchant is eliminated, making the manufacture of such devices simpler.